专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07682930B2 Method of forming elevated photosensor and resulting structure 有权
标题翻译：形成升高的光电传感器和结果的方法
公开(公告)号：US07682930B2
公开(公告)日：2010-03-23
申请号：US11449743
申请日：2006-06-09
申请人： Saijin Liu , Shu Qin
发明人： Saijin Liu , Shu Qin
IPC分类号： H01L31/09 , H01L31/18 , H01L21/00
CPC分类号： H01L27/14634 , H01L21/76254 , H01L27/1469
摘要： Elevated crystal silicon photosensors for imagers pixels, each photosensor formed of crystal silicon above the surface of a substrate that has pixel circuitry formed thereon. The imager has a high fill factor and good imaging properties due to the crystal silicon photosensor.
摘要翻译：用于成像器像素的升高的晶体硅光电传感器，每个光电传感器由其上形成有像素电路的衬底表面上的晶体硅形成。由于晶体硅光电传感器，成像器具有高填充因子和良好的成像性能。

2. 发明申请

US20070284686A1 Method of forming elevated photosensor and resulting structure 有权
标题翻译：形成升高的光电传感器和结果的方法
公开(公告)号：US20070284686A1
公开(公告)日：2007-12-13
申请号：US11449743
申请日：2006-06-09
申请人： Saijin Liu , Shu Qin
发明人： Saijin Liu , Shu Qin
IPC分类号： H01L31/0232
CPC分类号： H01L27/14634 , H01L21/76254 , H01L27/1469
摘要： Elevated crystal silicon photosensors for imagers pixels, each photosensor formed of crystal silicon above the surface of a substrate that has pixel circuitry formed thereon. The imager has a high fill factor and good imaging properties due to the crystal silicon photosensor.
摘要翻译：用于成像器像素的升高的晶体硅光电传感器，每个光电传感器由其上形成有像素电路的衬底表面上的晶体硅形成。由于晶体硅光电传感器，成像器具有高填充因子和良好的成像性能。

3. 发明授权

US07701636B2 Gradient index microlenses and method of formation 有权
标题翻译：梯度指数微透镜和形成方法
公开(公告)号：US07701636B2
公开(公告)日：2010-04-20
申请号：US12043838
申请日：2008-03-06
申请人： Ulrich Boettiger , Saijin Liu
发明人： Ulrich Boettiger , Saijin Liu
IPC分类号： G02B27/10 , G02B3/00
CPC分类号： G02B3/0018 , B29D11/00365 , G02B3/0087 , H01L27/14627 , H01L27/14685
摘要： A lens includes a gradient index of refraction and a curved shape. A method of making the lens includes forming a plurality of layers, forming a shaped resist on the plurality of layers, and etching the resist and the plurality of layers to transfer the shape of the resist into the plurality of layers.
摘要翻译：透镜包括梯度折射率和弯曲形状。制造透镜的方法包括形成多个层，在多个层上形成成形抗蚀剂，并蚀刻抗蚀剂和多个层，以将抗蚀剂的形状转移到多个层中。

4. 发明申请

US20090237801A1 Method and Apparatus Providing Concave Microlenses for Semiconductor Imaging Devices 有权
标题翻译：为半导体成像设备提供凹面微透镜的方法和装置
公开(公告)号：US20090237801A1
公开(公告)日：2009-09-24
申请号：US12052649
申请日：2008-03-20
申请人： Saijin Liu
发明人： Saijin Liu
IPC分类号： G02B27/10 , B05D5/06
CPC分类号： G02B3/0062 , H01L27/14627 , H01L27/14643 , H01L27/14685 , H04N5/2254
摘要： A method and apparatus providing an imaging device with a system of convex and concave microlenses at different levels over an array of photosensors. The concave microlenses redirect leaking light, which is not directed by the convex lenses onto the photosensors, onto the photosensors.
摘要翻译：一种成像装置的方法和装置，其具有在光电传感器阵列上的不同水平的凸和微透镜系统。凹入的微透镜将不由凸透镜引导到光电传感器上的泄漏光重定向到光传感器上。

5. 发明申请

US20080198248A1 Reduced edge effect from recesses in imagers 有权
标题翻译：降低成像器凹槽的边缘效应
公开(公告)号：US20080198248A1
公开(公告)日：2008-08-21
申请号：US11708790
申请日：2007-02-20
申请人： Saijin Liu
发明人： Saijin Liu
IPC分类号： H04N5/335
CPC分类号： G02B5/201 , G02B3/0056
摘要： Methods for making a recessed color filter array for a semiconductor imager employing a sidewall spacer for reducing an edge effect from the array are disclosed. In one embodiment, a substrate is provided having an upper surface. Then, a recess is formed into the upper surface of the substrate. The recess has a bottom and a sidewall. Subsequently, a sidewall spacer is formed on the sidewall of the recess. A color resist is deposited into the recess after forming the sidewall spacer. In the embodiment, the sidewall spacer is formed of a material having a surface energy lower than that of a material defining the bottom of the recess. The color resist, when deposited into the recess, adheres less to the sidewall than to the bottom of the recess. Thus, the color resist does not conform to a shape of an edge portion of the recess where the sidewall and the bottom meet, thereby reducing the edge effect.
摘要翻译：公开了一种制造用于半导体成像器的凹陷滤色器阵列的方法，所述半导体成像器采用侧壁间隔件以减少阵列的边缘效应。在一个实施例中，提供具有上表面的基板。然后，在基板的上表面形成凹部。凹部具有底部和侧壁。随后，在凹槽的侧壁上形成侧壁间隔物。在形成侧壁间隔物之后，将彩色抗蚀剂沉积到凹槽中。在该实施例中，侧壁间隔件由表面能低于限定凹部底部的材料的表面能的材料形成。当沉积到凹槽中时，抗彩色剂比凹槽的底部更少地粘附到侧壁上。因此，抗蚀剂不符合侧壁和底部相遇的凹部的边缘部分的形状，从而降低了边缘效果。

6. 发明申请

US20160172558A1 LED FLIP CHIP STRUCTURES WITH EXTENDED CONTACT PADS FORMED BY SINTERING SILVER 审中-公开
标题翻译： LED闪烁芯片结构与通过烧结银形成的扩展接触垫
公开(公告)号：US20160172558A1
公开(公告)日：2016-06-16
申请号：US14567636
申请日：2014-12-11
申请人： Saijin Liu
发明人： Saijin Liu
IPC分类号： H01L33/62 , H01L33/50 , H01L33/00 , H01L33/38
CPC分类号： H01L33/62 , H01L25/0753 , H01L33/38 , H01L33/382 , H01L33/40 , H01L33/502 , H01L2224/16225 , H01L2924/0002 , H01L2924/181 , H01L2933/0016 , H01L2933/0041 , H01L2933/0066 , H01L2924/00012 , H01L2924/00
摘要： Methods and apparatus are provided to improve the yield rate of LED packaging using LED flip chips. In one novel aspect, extended pads made of sintered silver are disposed on the cathode and the anode of the LED flip chip. The thickness of the extended pad is from about 25 μm to about 200 μm. In another embodiment, the LED flip chip further comprises a phosphor layer such that the LED flip chip emits white light. In another novel aspect, the LED flip chip with extended pads made of sintered silver is produced at the wafer level. The wafer level process involves applying sintering silver pastes to the cathode and the anode of each LED flip chip formed on the wafer and sintering the wafer at a temperature about 180° C. to about 240° C. for about two hours. The wafer is cut to individual LED flip chips with extended sintered silver pads.
摘要翻译：提供了使用LED倒装芯片提高LED封装产量的方法和装置。在一个新颖的方面，由烧结银制成的延伸焊盘设置在LED倒装芯片的阴极和阳极上。延伸垫的厚度为约25μm至约200μm。在另一个实施例中，LED倒装晶片还包括荧光层，使得LED倒装芯片发出白光。在另一个新颖的方面，在晶片级产生具有由烧结银制成的延伸焊盘的LED倒装芯片。晶片级工艺包括将烧结银浆料施加到形成在晶片上的每个LED倒装芯片的阴极和阳极，并将晶片在约180℃至约240℃的温度下烧结约2小时。将晶圆切割成具有延长的烧结银焊盘的各个LED倒装芯片。

7. 发明授权

US07955764B2 Methods to make sidewall light shields for color filter array 有权
标题翻译：制作滤光片阵列的侧壁灯罩的方法
公开(公告)号：US07955764B2
公开(公告)日：2011-06-07
申请号：US11785545
申请日：2007-04-18
申请人： Saijin Liu , Ulrich C. Boettiger
发明人： Saijin Liu , Ulrich C. Boettiger
IPC分类号： G02B5/20
CPC分类号： H01L27/14685 , H01L27/14621 , H01L27/14623 , H01L27/14643 , H01L31/02162 , H01L31/02164
摘要： Methods of forming color filters having a light blocking material therebetween. A color filter is formed such that a trench is defined between a color filter and an adjacent color filter. The trench may be formed by exposing the color filter to polymerizing conditions such as, for example, ultraviolet radiation and heat. The trench may also be formed by etching between adjacent color filters. A material is formed within the trench.
摘要翻译：形成其间具有遮光材料的滤色器的方法。形成滤色器，使得在滤色器和相邻滤色器之间限定沟槽。可以通过将滤色器暴露于聚合条件例如紫外线辐射和热来形成沟槽。沟槽也可以通过相邻滤色器之间的蚀刻形成。在沟槽内形成材料。

8. 发明授权

US07952155B2 Reduced edge effect from recesses in imagers 有权
标题翻译：降低成像器凹槽的边缘效应
公开(公告)号：US07952155B2
公开(公告)日：2011-05-31
申请号：US11708790
申请日：2007-02-20
申请人： Saijin Liu
发明人： Saijin Liu
IPC分类号： H01L31/0232
CPC分类号： G02B5/201 , G02B3/0056
摘要： Methods for making a recessed color filter array for a semiconductor imager employing a sidewall spacer for reducing an edge effect from the array are disclosed. In one embodiment, a substrate is provided having an upper surface. Then, a recess is formed into the upper surface of the substrate. The recess has a bottom and a sidewall. Subsequently, a sidewall spacer is formed on the sidewall of the recess. A color resist is deposited into the recess after forming the sidewall spacer. In the embodiment, the sidewall spacer is formed of a material having a surface energy lower than that of a material defining the bottom of the recess. The color resist adheres less to the sidewall than to the bottom of the recess. Thus, the color resist does not conform to a shape of an edge portion of the recess, thereby reducing the edge effect.
摘要翻译：公开了一种制造用于半导体成像器的凹陷滤色器阵列的方法，所述半导体成像器采用侧壁间隔件以减少阵列的边缘效应。在一个实施例中，提供具有上表面的基板。然后，在基板的上表面形成凹部。凹部具有底部和侧壁。随后，在凹槽的侧壁上形成侧壁间隔物。在形成侧壁间隔物之后，将彩色抗蚀剂沉积到凹槽中。在该实施例中，侧壁间隔件由表面能低于限定凹部底部的材料的表面能的材料形成。彩色抗蚀剂比凹槽的底部更靠近侧壁。因此，抗蚀剂不符合凹部的边缘部的形状，从而降低边缘效果。

9. 发明申请

US20090225435A1 GRADIENT INDEX MICROLENSES AND METHOD OF FORMATION 有权
标题翻译：梯度指数微生物和形成方法
公开(公告)号：US20090225435A1
公开(公告)日：2009-09-10
申请号：US12043838
申请日：2008-03-06
申请人： Ulrich Boettiger , Saijin Liu
发明人： Ulrich Boettiger , Saijin Liu
IPC分类号： G02B3/00 , B29D11/00
CPC分类号： G02B3/0018 , B29D11/00365 , G02B3/0087 , H01L27/14627 , H01L27/14685
摘要： A lens includes a gradient index of refraction and a curved shape. A method of making the lens includes forming a plurality of layers, forming a shaped resist on the plurality of layers, and etching the resist and the plurality of layers to transfer the shape of the resist into the plurality of layers.
摘要翻译：透镜包括梯度折射率和弯曲形状。制造透镜的方法包括形成多个层，在多个层上形成成形抗蚀剂，并蚀刻抗蚀剂和多个层，以将抗蚀剂的形状转移到多个层中。

10. 发明申请

US20090186304A1 GRAVITY AND PRESSURE ENHANCED REFLOW PROCESS TO FORM LENS STRUCTURES 审中-公开
标题翻译：重力和压力增强反射过程形成镜片结构
公开(公告)号：US20090186304A1
公开(公告)日：2009-07-23
申请号：US12017458
申请日：2008-01-22
申请人： Saijin Liu
发明人： Saijin Liu
IPC分类号： B29D11/00
CPC分类号： B29D11/00365 , G02B3/0018
摘要： A lens structure and methods of forming the lens structure are disclosed. The method includes attaching a lens block to a substrate such that gravitational force acts to push the lens block against the substrate. The substrate is positioned such that gravitational force acts to pull the lens block from the substrate. The lens block is then heated such that gravity and surface tension of the block forms the lens structure.
摘要翻译：公开了一种透镜结构和形成透镜结构的方法。该方法包括将透镜块附接到基板，使得重力作用以将透镜块推向基板。基板被定位成使得重力用于将透镜块从基板拉出。然后加热透镜块，使得块的重力和表面张力形成透镜结构。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式