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1. 发明申请

US20100110546A1 PHOTONICS DEVICE 审中-公开
标题翻译：光电设备
公开(公告)号：US20100110546A1
公开(公告)日：2010-05-06
申请号：US12541710
申请日：2009-08-14
申请人： Sahnggi PARK , Kap-Joong Kim , In-Gyoo Kim , Gyungock Kim
发明人： Sahnggi PARK , Kap-Joong Kim , In-Gyoo Kim , Gyungock Kim
IPC分类号： G02B5/18
CPC分类号： G02B6/305 , G02B6/264 , G02B6/32
摘要： Provided is a photonics device. The photonics device includes a distribution Bragg reflector (DBR), first and second waveguides disposed at both sides of the DBR, first lenses disposed between the DBR and the first waveguides, and second lenses disposed between the DBR and the second waveguides.
摘要翻译：提供了一种光子器件。光子器件包括分布布拉格反射器（DBR），布置在DBR的两侧的第一和第二波导，设置在DBR和第一波导之间的第一透镜以及设置在DBR和第二波导之间的第二透镜。

2. 发明授权

US08548281B2 Electro-optic modulating device 有权
标题翻译：电光调制装置
公开(公告)号：US08548281B2
公开(公告)日：2013-10-01
申请号：US12872881
申请日：2010-08-31
申请人： Gyungock Kim , Jeong Woo Park , Jongbum You , Sang Gi Kim , Sanghoon Kim , In Gyoo Kim , Jiho Joo , Duk Jun Kim , Dongwoo Suh , Sahnggi Park , Ki Seok Jang , Junghyung Pyo , Kap-Joong Kim , Do Won Kim , Dae Seo Park
发明人： Gyungock Kim , Jeong Woo Park , Jongbum You , Sang Gi Kim , Sanghoon Kim , In Gyoo Kim , Jiho Joo , Duk Jun Kim , Dongwoo Suh , Sahnggi Park , Ki Seok Jang , Junghyung Pyo , Kap-Joong Kim , Do Won Kim , Dae Seo Park
IPC分类号： G02F1/025
CPC分类号： G02F1/025 , G02F2201/063
摘要： Provided is an electro-optic modulating device. The electro-optic modulating device includes an optical waveguide with a vertical structure and sidewalls of the vertical structure are used to configure a junction.
摘要翻译：提供了一种电光调制装置。电光调制装置包括具有垂直结构的光波导，垂直结构的侧壁用于构造接合部。

3. 发明申请

US20130156369A1 RING RESONATORS HAVING Si AND/OR SiN WAVEGUIDES 审中-公开
标题翻译：具有Si和/或SiN波长的环形谐振器
公开(公告)号：US20130156369A1
公开(公告)日：2013-06-20
申请号：US13535746
申请日：2012-06-28
申请人： Sahnggi Park , Kap-Joong Kim , In Gyoo Kim , Gyungock Kim
发明人： Sahnggi Park , Kap-Joong Kim , In Gyoo Kim , Gyungock Kim
IPC分类号： G02B6/12
CPC分类号： G02B6/12007 , G02B2006/12061
摘要： Provided is a ring resonator including first and second waveguides disposed spaced apart from each other, on a substrate, and at least one channel including at least one ring waveguide arranged in a row between the first and second waveguides. The first and second waveguides and the ring waveguide may be formed of silicon, a width of the ring waveguide may range from 0.7 μm to 1.5 μm, a height of the ring waveguide may range from 150 nm to 300 nm, and a space between the first and second waveguides and the ring waveguide most adjacent thereto may range from 250 nm to 1 mm.
摘要翻译：提供了一种环形谐振器，包括彼此间隔开地布置在衬底上的第一和第二波导，以及包括在第一和第二波导之间布置成一行的至少一个环形波导的至少一个通道。第一和第二波导和环形波导可以由硅形成，环形波导的宽度可以在0.7μm到1.5μm的范围内，环形波导的高度可以在150nm到300nm的范围内，第一和第二波导以及与其最相邻的环形波导可以在250nm至1mm的范围内。

4. 发明申请

US20100130010A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE UNCONSTRAINED BY OPTICAL LIMIT AND APPARATUS OF FABRICATING THE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造光限制半导体器件的方法和制造半导体器件的设备
公开(公告)号：US20100130010A1
公开(公告)日：2010-05-27
申请号：US12538080
申请日：2009-08-07
申请人： Sahnggi PARK , Kap-Joong Kim , In-Gyoo Kim , Gyungock Kim
发明人： Sahnggi PARK , Kap-Joong Kim , In-Gyoo Kim , Gyungock Kim
IPC分类号： H01L21/308 , G01B11/27
CPC分类号： H01L21/0338 , G01B11/27 , G03F9/7069 , G03F9/7088 , H01L21/0337
摘要： Provided are a method of fabricating a semiconductor device unconstrained by optical limit and an apparatus of fabricating the semiconductor device. The method includes: forming an etch target layer on a substrate; forming a hard mask layer on the etch target layer; forming first mask patterns on the hard mask layer; forming first spacers on sidewalls of the first mask patterns; forming hard mask patterns having an opening by using the first mask patterns and the first spacers as a mask to etch the hard mask layer; aligning second mask patterns on the hard mask patterns to fill the opening; forming second spacers on sidewalls of the second mask patterns; forming fine mask patterns by using the second mask patterns and the second spacers as a mask to etch the hard mask patterns; and forming fine patterns by using the fine mask patterns as a mask to etch the etch target layer.
摘要翻译：提供一种制造不受光学极限约束的半导体器件的方法和制造半导体器件的装置。该方法包括：在衬底上形成蚀刻目标层; 在蚀刻靶层上形成硬掩模层; 在硬掩模层上形成第一掩模图案; 在所述第一掩模图案的侧壁上形成第一间隔物; 通过使用第一掩模图案和第一间隔物作为掩模形成具有开口的硬掩模图案以蚀刻硬掩模层; 对准硬掩模图案上的第二掩模图案以填充开口; 在所述第二掩模图案的侧壁上形成第二间隔物; 通过使用第二掩模图案和第二间隔物作为掩模来形成精细的掩模图案以蚀刻硬掩模图案; 并通过使用精细掩模图案作为掩模来形成精细图案以蚀刻蚀刻目标层。

5. 发明申请

US20110135265A1 METHOD OF FORMING WAVEGUIDE FACET AND PHOTONICS DEVICE USING THE METHOD 审中-公开
标题翻译：使用该方法形成波长面和光子器件的方法
公开(公告)号：US20110135265A1
公开(公告)日：2011-06-09
申请号：US12842287
申请日：2010-07-23
申请人： Sahnggi PARK , Kap-Joong Kim , Gyungock Kim
发明人： Sahnggi PARK , Kap-Joong Kim , Gyungock Kim
IPC分类号： G02B6/10 , C23F1/00
CPC分类号： G02B6/13
摘要： Provided are a method of forming a waveguide facet and a photonics device using the method. The method includes forming at least one optical device die including waveguides on a substrate, forming at least one trench in a lower surface of the substrate, and cleaving the substrate to form facets of the waveguides over the trench. The trench is formed along a direction crossing the waveguides under the waveguides.
摘要翻译：提供了使用该方法形成波导面和光子器件的方法。所述方法包括在衬底上形成至少一个包括波导的光学器件裸片，在衬底的下表面中形成至少一个沟槽，并且切割衬底以在沟槽上形成波导的刻面。沿着与波导下方的波导交叉的方向形成沟槽。

6. 发明申请

US20100303435A1 OPTICAL DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：光学装置及其制造方法
公开(公告)号：US20100303435A1
公开(公告)日：2010-12-02
申请号：US12555767
申请日：2009-09-08
申请人： Sahnggi Park , Kap-Joong Kim , Duk Jun Kim , Gyungock Kim
发明人： Sahnggi Park , Kap-Joong Kim , Duk Jun Kim , Gyungock Kim
IPC分类号： G02B6/00 , G03F7/20
CPC分类号： G02B6/12007
摘要： Provided are an optical device and a method of fabricating the same. The optical device includes: a substrate; and a ring resonator on the substrate. The ring resonator includes: a cladding layer including a lower cladding layer and an upper cladding layer on the substrate; a core including a plurality of rings between the lower cladding layer and the upper cladding layer; and an embeded layer interposed between the core and the cladding layer and having a refractive index less than that of the core and more than that of the cladding layer.
摘要翻译：提供了一种光学器件及其制造方法。光学装置包括：基板; 和在基板上的环形谐振器。环形谐振器包括：在基板上包括下包层和上包层的包层; 芯包括在下包层和上包层之间的多个环; 以及插入在芯和包覆层之间并且折射率小于芯的折射率并且大于包覆层的折射率的嵌入层。

7. 发明授权

US08761553B2 Optical network structures for multi-core central processor unit 有权
标题翻译：多核中央处理器单元的光网络结构
公开(公告)号：US08761553B2
公开(公告)日：2014-06-24
申请号：US13302371
申请日：2011-11-22
申请人： Sahnggi Park , Gyungock Kim , In Gyoo Kim , Jeong Woo Park , Sang Hoon Kim , Do Won Kim
发明人： Sahnggi Park , Gyungock Kim , In Gyoo Kim , Jeong Woo Park , Sang Hoon Kim , Do Won Kim
IPC分类号： G02B6/26 , G02B6/12
CPC分类号： H04J14/028 , G02B6/12007 , H01S5/026 , H01S5/1032 , H01S5/4087 , H04J14/02 , H04J14/0201
摘要： Provided is an optical network structure. To configure an optical network structure between hundreds or more of cores in a CPU, intersection between waveguides does not occur, and thus, the optical network structure enables two-way communication between all the cores without an optical switch disposed in an intersection point. The present invention enables a single chip optical network using a silicon photonics optical element, and a CPU chip configured with hundreds or thousands of cores can be developed.
摘要翻译：提供了一种光网络结构。为了在CPU中配置数百个或更多个核心之间的光网络结构，不会发生波导之间的交叉，因此，光网络结构在所有核心之间实现双向通信，而光交换机不设置在交叉点。本发明使得能够使用硅光子学光学元件的单芯片光网络，并且可以开发配置有数百或数千个核的CPU芯片。

8. 发明授权

US08859319B2 Methods of forming photo detectors 有权
标题翻译：形成光电检测器的方法
公开(公告)号：US08859319B2
公开(公告)日：2014-10-14
申请号：US13612736
申请日：2012-09-12
申请人： Sang Hoon Kim , Gyungock Kim , In Gyoo Kim , JiHo Joo , Ki Seok Jang
发明人： Sang Hoon Kim , Gyungock Kim , In Gyoo Kim , JiHo Joo , Ki Seok Jang
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , G02B6/12004 , G02B6/131 , H01L31/02327 , H01L31/103 , H01L31/1037 , H01L31/109 , Y02E10/547 , Y02P70/521
摘要： Methods of forming photo detectors are provided. The method includes providing a semiconductor layer on a substrate, forming a trench in the semiconductor layer, forming a first single crystalline layer and a second single crystalline layer using a selective single crystalline growth process in the trench, and patterning the first and second single crystalline layers and the semiconductor layer to form a first single crystalline pattern, a second single crystalline pattern and an optical waveguide.
摘要翻译：提供了形成光电检测器的方法。该方法包括在衬底上提供半导体层，在半导体层中形成沟槽，在沟槽中使用选择性单晶生长工艺形成第一单晶层和第二单晶层，以及使第一和第二单晶层和半导体层以形成第一单晶图案，第二单晶图案和光波导。

9. 发明申请

US20120126357A1 LIGHT DETECTION DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：光检测装置及其制造方法
公开(公告)号：US20120126357A1
公开(公告)日：2012-05-24
申请号：US13284818
申请日：2011-10-28
申请人： Sang Hoon KIM , Gyungock Kim , In Gyoo Kim , JiHo Joo , Ki Seok Jang
发明人： Sang Hoon KIM , Gyungock Kim , In Gyoo Kim , JiHo Joo , Ki Seok Jang
IPC分类号： H01L31/102 , H01L31/18
CPC分类号： H01L31/102 , H01L31/18
摘要： Provided are light detection devices and methods of manufacturing the same. The light detection device includes a first conductive pattern on a surface of a substrate, an insulating pattern on the substrate and having an opening exposing at least a portion of the first conductive pattern, a light absorbing layer filling the opening of the insulating pattern and having a top surface disposed at a level substantially higher than a top surface of the insulating pattern, a second conductive pattern on the light absorbing layer, and connecting terminals electrically connected to the first and second conductive patterns, respectively.
摘要翻译：提供了光检测装置及其制造方法。光检测装置包括在基板的表面上的第一导电图案，在基板上的绝缘图案，并且具有露出第一导电图案的至少一部分的开口，填充绝缘图案的开口的光吸收层，并且具有设置在基本上高于绝缘图案的顶表面的高度的顶表面，在光吸收层上的第二导电图案，以及分别电连接到第一和第二导电图案的连接端子。

10. 发明授权

US08288185B2 Semiconductor devices and methods of forming the same 有权
标题翻译：半导体器件及其形成方法
公开(公告)号：US08288185B2
公开(公告)日：2012-10-16
申请号：US12788542
申请日：2010-05-27
申请人： In Gyoo Kim , Dae Seo Park , Jun Taek Hong , Gyungock Kim
发明人： In Gyoo Kim , Dae Seo Park , Jun Taek Hong , Gyungock Kim
IPC分类号： H01L21/00
CPC分类号： H01L21/7624 , H01L21/76243 , H01L21/76264 , H01L29/0657
摘要： Provided are a semiconductor device and a method of forming the same. According to the method, a first buried oxide layer is locally formed in a semiconductor substrate and a core semiconductor pattern of a line form, a pair of anchor-semiconductor patterns and a support-semiconductor pattern are formed by patterning a semiconductor layer on the first buried oxide layer to expose the first buried oxide layer. The pair of anchor-semiconductor patterns contact both ends of the core semiconductor pattern, respectively, and the support-semiconductor pattern contacts one sidewall of the core semiconductor pattern, the first buried oxide layer below the core semiconductor pattern is removed. At this time, a portion of the first buried oxide layer below each of the anchor-semiconductor patterns and a portion of the first buried oxide layer below the support-semiconductor pattern remain. A second buried oxide layer is formed to fill a region where the first buried oxide layer below the core semiconductor pattern.
摘要翻译：提供半导体器件及其形成方法。根据该方法，在半导体衬底中局部地形成第一掩埋氧化物层，并且通过在第一衬底上图案化半导体层来形成线形式的芯半导体图案，一对锚半导体图案和支撑半导体图案埋入氧化物层以暴露第一掩埋氧化物层。一对锚半导体图案分别接触芯半导体图案的两端，并且支撑半导体图案接触芯半导体图案的一个侧壁，去除芯半导体图案下方的第一掩埋氧化物层。此时，保留在半导体图案的每一个下面的第一掩埋氧化物层的一部分和位于载体半导体图案之下的第一掩埋氧化物层的一部分。形成第二掩埋氧化物层以填充在芯半导体图案之下的第一掩埋氧化物层的区域。

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