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1. 发明申请

US20110058764A1 ELECTRO-OPTIC MODULATING DEVICE 有权
标题翻译：电光调制装置
公开(公告)号：US20110058764A1
公开(公告)日：2011-03-10
申请号：US12872881
申请日：2010-08-31
申请人： Gyungock KIM , Jeong Woo Park , Jongbum You , Sang Gi Kim , Sanghoon Kim , In Gyoo Kim , Jiho Joo , Duk Jun Kim , Dongwoo Suh , Sahnggi Park , Ki Seok Jang , Junghyung Pyo , Kap-Joong Kim , Do Won Kim , Dae Seo Park
发明人： Gyungock KIM , Jeong Woo Park , Jongbum You , Sang Gi Kim , Sanghoon Kim , In Gyoo Kim , Jiho Joo , Duk Jun Kim , Dongwoo Suh , Sahnggi Park , Ki Seok Jang , Junghyung Pyo , Kap-Joong Kim , Do Won Kim , Dae Seo Park
IPC分类号： G02F1/035
CPC分类号： G02F1/025 , G02F2201/063
摘要： Provided is an electro-optic modulating device. The electro-optic modulating device includes an optical waveguide with a vertical structure and sidewalls of the vertical structure are used to configure a junction.
摘要翻译：提供了一种电光调制装置。电光调制装置包括具有垂直结构的光波导，垂直结构的侧壁用于构造接合部。

2. 发明授权

US08548281B2 Electro-optic modulating device 有权
标题翻译：电光调制装置
公开(公告)号：US08548281B2
公开(公告)日：2013-10-01
申请号：US12872881
申请日：2010-08-31
申请人： Gyungock Kim , Jeong Woo Park , Jongbum You , Sang Gi Kim , Sanghoon Kim , In Gyoo Kim , Jiho Joo , Duk Jun Kim , Dongwoo Suh , Sahnggi Park , Ki Seok Jang , Junghyung Pyo , Kap-Joong Kim , Do Won Kim , Dae Seo Park
发明人： Gyungock Kim , Jeong Woo Park , Jongbum You , Sang Gi Kim , Sanghoon Kim , In Gyoo Kim , Jiho Joo , Duk Jun Kim , Dongwoo Suh , Sahnggi Park , Ki Seok Jang , Junghyung Pyo , Kap-Joong Kim , Do Won Kim , Dae Seo Park
IPC分类号： G02F1/025
CPC分类号： G02F1/025 , G02F2201/063
摘要： Provided is an electro-optic modulating device. The electro-optic modulating device includes an optical waveguide with a vertical structure and sidewalls of the vertical structure are used to configure a junction.
摘要翻译：提供了一种电光调制装置。电光调制装置包括具有垂直结构的光波导，垂直结构的侧壁用于构造接合部。

3. 发明申请

US20110133187A1 PHOTO DETECTOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：相片检测器及其制造方法
公开(公告)号：US20110133187A1
公开(公告)日：2011-06-09
申请号：US12765705
申请日：2010-04-22
申请人： Sang Hoon KIM , Gyungock Kim , In Gyoo Kim , Dongwoo Suh , Jiho Joo , Ki Seok Jang
发明人： Sang Hoon KIM , Gyungock Kim , In Gyoo Kim , Dongwoo Suh , Jiho Joo , Ki Seok Jang
IPC分类号： H01L31/0256 , H01L31/18 , H01L31/0232
CPC分类号： G02B6/12004 , G02B2006/12176 , G02B2006/12188 , H01L31/105 , H01L31/1804 , H01L31/1812 , Y02E10/547 , Y02P70/521
摘要： Provided is a manufacturing method of a photo detector. The method includes: forming a first single crystal semiconductor layer and an optical waveguide protruding from the first single crystal semiconductor layer; forming an insulation layer on the first single crystal semiconductor layer to cover the optical waveguide; forming an opening by etching the insulation layer to expose the top surface of the optical waveguide; forming a second single crystal semiconductor layer from the top surface of the exposed optical waveguide, in the opening; and selectively forming a poly semiconductor layer from the top surface of the second single crystal semiconductor layer, the poly semiconductor layer being doped with dopants.
摘要翻译：提供了一种光电检测器的制造方法。该方法包括：形成从第一单晶半导体层突出的第一单晶半导体层和光波导; 在所述第一单晶半导体层上形成绝缘层以覆盖所述光波导; 通过蚀刻绝缘层来形成开口以暴露光波导的顶表面; 在所述开口中从所述暴露的光波导的顶表面形成第二单晶半导体层; 以及从所述第二单晶半导体层的顶表面选择性地形成多晶半导体层，所述多晶半导体层掺杂有掺杂剂。

4. 发明授权

US08823121B2 Waveguide photo-detector 有权
标题翻译：波导光电探测器
公开(公告)号：US08823121B2
公开(公告)日：2014-09-02
申请号：US13550364
申请日：2012-07-16
申请人： Dongwoo Suh , Sanghoon Kim , Jiho Joo , Gyungock Kim
发明人： Dongwoo Suh , Sanghoon Kim , Jiho Joo , Gyungock Kim
IPC分类号： H01L31/00 , G02B6/12 , H01L31/0352 , G02B6/13 , G02B6/136
CPC分类号： G02B6/12004 , G02B6/131 , G02B6/136 , G02B2006/121 , H01L31/0352
摘要： Provided is a waveguide photodetector that may improve an operation speed and increase or maximize productivity. The waveguide photodetector includes a waveguide layer extending in a first direction, an absorption layer disposed on the waveguide layer, a first electrode disposed on the absorption layer, a second electrode disposed on the waveguide layer, the second electrode being spaced from the first electrode and the absorption layer in a second direction crossing the first direction, and at least one bridge electrically connecting the absorption layer to the second electrode.
摘要翻译：提供了可以提高操作速度并增加或最大化生产率的波导光电检测器。波导光电检测器包括沿第一方向延伸的波导层，设置在波导层上的吸收层，设置在吸收层上的第一电极，设置在波导层上的第二电极，第二电极与第一电极间隔开，所述吸收层在与所述第一方向交叉的第二方向上，以及至少一个电桥将所述吸收层电连接到所述第二电极。

5. 发明授权

US08242571B2 Waveguide photo-detector 有权
标题翻译：波导光电探测器
公开(公告)号：US08242571B2
公开(公告)日：2012-08-14
申请号：US12763990
申请日：2010-04-20
申请人： Dongwoo Suh , Sanghoon Kim , Jiho Joo , Gyungock Kim
发明人： Dongwoo Suh , Sanghoon Kim , Jiho Joo , Gyungock Kim
IPC分类号： H01L31/0232 , G02B6/42
CPC分类号： G02B6/12004 , G02B6/131 , G02B6/136 , G02B2006/121 , H01L31/0352
摘要： Provided is a waveguide photodetector that may improve an operation speed and increase or maximize productivity. The waveguide photodetector includes a waveguide layer extending in a first direction, an absorption layer disposed on the waveguide layer, a first electrode disposed on the absorption layer, a second electrode disposed on the waveguide layer, the second electrode being spaced from the first electrode and the absorption layer in a second direction crossing the first direction, and at least one bridge electrically connecting the absorption layer to the second electrode.
摘要翻译：提供了可以提高操作速度并增加或最大化生产率的波导光电检测器。波导光电检测器包括沿第一方向延伸的波导层，设置在波导层上的吸收层，设置在吸收层上的第一电极，设置在波导层上的第二电极，第二电极与第一电极间隔开，所述吸收层在与所述第一方向交叉的第二方向上，以及至少一个电桥将所述吸收层电连接到所述第二电极。

6. 发明授权

US08698271B2 Germanium photodetector and method of fabricating the same 有权
标题翻译：锗光电探测器及其制造方法
公开(公告)号：US08698271B2
公开(公告)日：2014-04-15
申请号：US12404275
申请日：2009-03-13
申请人： Dongwoo Suh , Sang Hoon Kim , Gyungock Kim , JiHo Joo
发明人： Dongwoo Suh , Sang Hoon Kim , Gyungock Kim , JiHo Joo
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L31/028 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L21/02667 , H01L31/103 , H01L31/1808 , H01L31/1872 , Y02E10/50 , Y02P70/521
摘要： Provided is a germanium photodetector having a germanium epitaxial layer formed without using a buffer layer and a method of fabricating the same. In the method, an amorphous germanium layer is formed on a substrate. The amorphous germanium layer is heated up to a high temperature to form a crystallized germanium layer. A germanium epitaxial layer is formed on the crystallized germanium layer.
摘要翻译：提供了具有不使用缓冲层形成的锗外延层的锗光电检测器及其制造方法。在该方法中，在基板上形成无定形锗层。将非晶锗层加热至高温以形成结晶的锗层。在结晶的锗层上形成锗外延层。

7. 发明申请

US20100044828A1 MONOLITHIC INTEGRATED COMPOSITE DEVICE HAVING SILICON INTEGRATED CIRCUIT AND SILICON OPTICAL DEVICE INTEGRATED THEREON, AND FABRICATION METHOD THEREOF 有权
标题翻译：具有硅集成电路的单片集成复合器件及其集成的硅光学器件及其制造方法
公开(公告)号：US20100044828A1
公开(公告)日：2010-02-25
申请号：US12441377
申请日：2007-04-03
申请人： Dongwoo Suh , Gyungock Kim
发明人： Dongwoo Suh , Gyungock Kim
IPC分类号： H01L29/06
CPC分类号： H01L27/144 , H01L2924/0002 , H01L2924/00
摘要： Provided is a monolithic integrated composite device including: a silicon substrate which is partitioned into a silicon integrated circuit forming region and a silicon optical device forming region; a buried oxide layer which is formed locally in the silicon substrate of the silicon optical device forming region and isolates unit devices of the silicon optical device forming region; an overlay layer formed locally on the buried oxide layer; a silicon optical device formed in the silicon optical device forming region using the silicon overlay layer; a silicon integrated circuit formed in the silicon integrated circuit forming region of the silicon substrate; and wiring connecting the silicon integrated circuit and the silicon optical device or connecting the silicon optical devices or connecting the silicon integrated circuits.
摘要翻译：提供了一种单片集成复合器件，包括：分隔成硅集成电路形成区域的硅衬底和硅光学器件形成区域; 在硅光学器件形成区域的硅衬底中局部形成的掩埋氧化物层，并隔离硅光学器件形成区域的单元器件; 在掩埋氧化物层上局部形成的覆盖层; 使用所述硅覆盖层形成在所述硅光学器件形成区域中的硅光学器件; 形成在硅衬底的硅集成电路形成区域中的硅集成电路; 以及连接硅集成电路和硅光学器件或连接硅光学器件或连接硅集成电路的布线。

8. 发明授权

US07915700B2 Monolithic integrated composite device having silicon integrated circuit and silicon optical device integrated thereon, and fabrication method thereof 有权
标题翻译：集成有硅集成电路和硅光学器件的单片集成复合器件及其制造方法
公开(公告)号：US07915700B2
公开(公告)日：2011-03-29
申请号：US12441377
申请日：2007-04-03
申请人： Dongwoo Suh , Gyungock Kim
发明人： Dongwoo Suh , Gyungock Kim
IPC分类号： H01L31/0232 , H01L23/58
CPC分类号： H01L27/144 , H01L2924/0002 , H01L2924/00
摘要： Provided is a monolithic integrated composite device including: a silicon substrate which is partitioned into a silicon integrated circuit forming region and a silicon optical device forming region; a buried oxide layer which is formed locally in the silicon substrate of the silicon optical device forming region and isolates unit devices of the silicon optical device forming region; an overlay layer formed locally on the buried oxide layer; a silicon optical device formed in the silicon optical device forming region using the silicon overlay layer; a silicon integrated circuit formed in the silicon integrated circuit forming region of the silicon substrate; and wiring connecting the silicon integrated circuit and the silicon optical device or connecting the silicon optical devices or connecting the silicon integrated circuits.
摘要翻译：提供了一种单片集成复合器件，包括：分隔成硅集成电路形成区域的硅衬底和硅光学器件形成区域; 在硅光学器件形成区域的硅衬底中局部形成的掩埋氧化物层，并隔离硅光学器件形成区域的单元器件; 在掩埋氧化物层上局部形成的覆盖层; 使用所述硅覆盖层形成在所述硅光学器件形成区域中的硅光学器件; 形成在硅衬底的硅集成电路形成区域中的硅集成电路; 以及连接硅集成电路和硅光学器件或连接硅光学器件或连接硅集成电路的布线。

9. 发明申请

US20120145999A1 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120145999A1
公开(公告)日：2012-06-14
申请号：US13193690
申请日：2011-07-29
申请人： Dongwoo Suh , Sung Bock Kim , Hojun Ryu
发明人： Dongwoo Suh , Sung Bock Kim , Hojun Ryu
IPC分类号： H01L29/775 , B82Y40/00 , B82Y99/00 , H01L21/336
CPC分类号： H01L29/0673 , B82Y10/00 , B82Y40/00 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/02603 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L29/068 , H01L29/66439 , H01L29/775 , H01L29/78696 , Y10S977/762
摘要： Provided are semiconductor devices and methods of manufacturing the same. The semiconductor device includes a substrate including a first top surface, a second top surface lower in level than the first top surface, and a first perpendicular surface disposed between the first and second top surfaces, a first source/drain region formed under the first top surface, a first nanowire extended from the first perpendicular surface in one direction and being spaced apart from the second top surface, a second nanowire extended from a side surface of the first nanowire in the one direction, being spaced apart from the second top surface, and including a second source/drain region, a gate electrode on the first nanowire, and a dielectric layer between the first nanowire and the gate electrode.
摘要翻译：提供半导体器件及其制造方法。该半导体器件包括：衬底，其包括第一顶表面，比第一顶表面低的第二顶表面和设置在第一和第二顶表面之间的第一垂直表面，形成在第一顶表面下的第一源极/漏极区域表面，在一个方向上从第一垂直表面延伸并与第二顶表面间隔开的第一纳米线，从第一纳米线的沿一个方向的侧表面延伸的第二纳米线，与第二顶表面间隔开，并且包括第一源极/漏极区域，第一纳米线上的栅电极以及第一纳米线与栅电极之间的介电层。

10. 发明授权

US06686640B2 Varactor having improved Q-factor and method of fabricating the same using SiGe heterojunction bipolar transistor 有权
标题翻译：具有改进的Q因子的变容二极管及其使用SiGe异质结双极晶体管的制造方法
公开(公告)号：US06686640B2
公开(公告)日：2004-02-03
申请号：US10044107
申请日：2002-01-11
申请人： Bongki Mheen , Dongwoo Suh , Jin-Yeong Kang
发明人： Bongki Mheen , Dongwoo Suh , Jin-Yeong Kang
IPC分类号： H01L2993
CPC分类号： H01L29/66174 , H01L29/66242 , H01L29/93
摘要： A varactor includes a semiconductor substrate of a first conductivity type, a high-concentration buried collector region of a second conductivity type formed in an upper portion of the semiconductor substrate, a collector region of the second conductivity type formed on a first surface of the high-concentration buried collector region, a high-concentration collector contact region of the second conductivity type formed on a second surface of the high-concentration buried collector region, a high-concentration silicon-germanium base region of the first conductivity type formed on the collector region, a metal silicide layer formed on the silicon-germanium base region, a first electrode layer formed to contact the metal silicide layer, and a second electrode layer formed to be electrically connected to the collector contact region.
摘要翻译：变容二极管包括第一导电类型的半导体衬底，形成在半导体衬底的上部的第二导电类型的高浓度集电区，在第一表面上形成第二导电类型的集电极区浓度埋集电极区域，形成在高浓度埋集体区域的第二表面上的第二导电类型的高浓度集电极接触区域，形成在集电体上的第一导电类型的高浓度硅 - 锗基区域形成在硅 - 锗基区上的金属硅化物层，形成为与金属硅化物层接触的第一电极层和形成为与集电极接触区电连接的第二电极层。

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