专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5242707A System and method for producing electro-optic components integrable with silicon-on-sapphire circuits 失效
标题翻译：用于生产可与蓝宝石蓝宝石电路集成的电光元件的系统和方法
公开(公告)号：US5242707A
公开(公告)日：1993-09-07
申请号：US632033
申请日：1990-12-21
申请人： Sadik C. Esener , Sing H. Lee , Subramania Krishnakumar , Volkan H. Ozguz , Chi Fan
发明人： Sadik C. Esener , Sing H. Lee , Subramania Krishnakumar , Volkan H. Ozguz , Chi Fan
IPC分类号： C23C14/08 , C23C14/50 , G02F1/055 , H01L21/84
CPC分类号： C23C14/505 , C23C14/088 , G02F1/0551 , H01L21/84
摘要： A system and method are disclosed for producing electro-optic components with transparent, ferroelectric PLZT (perovskite) film characteristics, without lead diffusion. In particular, the fabrication of PLZT-on-sapphire electro-optic components for devices such as spatial light modulators, integrated infrared detectors, and optoelectronic integrated circuits is disclosed, permitting integration of such devices with semiconductor devices having the same substrate, such as silicon-on-sapphire circuits. The system comprises a PLZT film deposition apparatus, a silicon dioxide deposition apparatus, an annealing apparatus, and an optional plasma etching apparatus. During film deposition, material from a PLZT target (source) of suitable (9/65/35) composition is deposited on the substrate and is epitaxially grown on the R-plane (1102) of the substrate, forming a non-ferroelectric, pyrochloric film. The substrate and film are then placed in a silicon dioxide (SiO.sub.2) deposition chamber where SiO.sub.2 is deposited as an insulating layer covering (capping) the film. The substrate, with film and SiO.sub.2 layer, is then placed in an annealing apparatus, at a selected temperature above 550.degree. C. for a selected period of time, to transform the non-ferroelectric, pyrochloric film into a ferroelectric, perovskite film of (9/65/35) composition. The SiO.sub.2 layer may then be removed by conventional etching.
摘要翻译：公开了一种用于生产具有透明的铁电PLZT（钙钛矿）膜特性的电光元件而不引线扩散的系统和方法。特别地，公开了用于诸如空间光调制器，集成红外检测器和光电集成电路的器件的PLZT-蓝宝石电光元件的制造，允许这样的器件与具有相同衬底的半导体器件（诸如硅 - 蓝宝石电路。该系统包括PLZT膜沉积设备，二氧化硅沉积设备，退火设备和可选的等离子体蚀刻设备。在膜沉积期间，将来自适合（9/65/35）组成的PLZT靶（源）的材料沉积在衬底上并在衬底的R平面（1102）上外延生长，形成非铁电，高氯酸电影。然后将衬底和膜放置在二氧化硅（SiO 2）沉积室中，其中SiO 2沉积为覆盖（封盖）膜的绝缘层。然后将具有膜和SiO 2层的衬底在选定的温度高于550℃的退火设备中放置一段选定的时间，以将非铁电的高氯酸盐膜转变成铁电体的钙钛矿膜（ 9/65/35）组成。然后可以通过常规蚀刻去除SiO 2层。

2. 发明申请

US20140046181A1 ACOUSTICALLY RESPONSIVE PARTICLES WITH DECREASED CAVITATION THRESHOLD 审中-公开
标题翻译：具有降低裂隙阈值的有声响应的颗粒
公开(公告)号：US20140046181A1
公开(公告)日：2014-02-13
申请号：US13978140
申请日：2012-01-05
申请人： Michael Benchimol , Sadik C. Esener , Dmitri Simberg , Stuart Ibsen
发明人： Michael Benchimol , Sadik C. Esener , Dmitri Simberg , Stuart Ibsen
IPC分类号： A61K41/00 , A61M5/00 , A61M37/00
CPC分类号： A61K41/0047 , A61K9/0009 , A61K9/1273 , A61K41/0028 , A61M5/007 , A61M37/0092
摘要： Techniques, systems, devices and materials are disclosed for implementing and fabricating drug delivery and imaging vehicles, which are activated in the body at a tissue of interest by focused ultrasound. In one aspect, a drug delivery vehicle can include a carrier having an outer membrane that envelopes an acoustic sensitizer particle and a payload substance to be delivered to the target tissue. The outer membrane can protect the acoustic sensitizer particle and the payload substance from degradation and opsonization. The outer membrane can be functionalized with a tumor targeting ligand to cause the drug delivery vehicle to selectively accumulate in a tumor region over other tissues, as well as with an agent to increase circulation time by reducing uptake from undesired body tissues, organs, and systems.
摘要翻译：公开了用于实施和制造药物递送和成像载体的技术，系统，装置和材料，其通过聚焦超声在感兴趣的组织在体内被激活。在一个方面，药物递送载体可以包括具有外膜的载体，其包围声敏剂颗粒和有效载体物质被输送到目标组织。外膜可以保护声学敏化剂颗粒和有效载荷物质免于降解和调理。外膜可以用肿瘤靶向配体进行功能化，以使药物递送媒介物在其他组织上选择性地积聚在肿瘤区域中，以及通过减少来自不期望的身体组织，器官和系统的摄取而增加循环时间的试剂。

3. 发明申请

US20100027104A1 Photonic Devices Based On Vertical-Cavity Semiconductor Optical Amplifiers 有权
标题翻译：基于垂直腔半导体光放大器的光子器件
公开(公告)号：US20100027104A1
公开(公告)日：2010-02-04
申请号：US12444155
申请日：2007-10-05
申请人： Sadik C. Esener , Haijiang Zhang , Pengyue Wen , Matthias Gross
发明人： Sadik C. Esener , Haijiang Zhang , Pengyue Wen , Matthias Gross
IPC分类号： H01S4/00 , H01S3/00
CPC分类号： G02F3/02 , H01S5/041 , H01S5/0607 , H01S5/18308 , H01S5/423 , H01S5/50 , H04B10/2914
摘要： Vertical cavity semiconductor optical amplifiers for various photonic devices including all optical logic gate devices and oscillators, where such devices can be implemented to achieve various advantages, including Boolean inversion at high speeds, low power, workable noise margins for cascadability because of input output isolation, and easy of integration in large arrays.
摘要翻译：用于各种光子器件的垂直腔半导体光放大器，包括所有光逻辑门器件和振荡器，其中可以实现这样的器件以实现各种优点，包括高速下的布尔反转，低功率，由于输入输出隔离而级联的可工作噪声容限，并且易于集成在大阵列中。

4. 发明授权

US5321639A Dual-scale topology optoelectronic matrix algebraic processing system 失效
标题翻译：双尺度拓扑光电矩阵代数处理系统
公开(公告)号：US5321639A
公开(公告)日：1994-06-14
申请号：US846277
申请日：1992-03-02
申请人： Ashok V. Krishnamoorthy , Gary C. Marsden , Joseph E. Ford , Sadik C. Esener
发明人： Ashok V. Krishnamoorthy , Gary C. Marsden , Joseph E. Ford , Sadik C. Esener
IPC分类号： G06E1/02 , G06N3/067 , G06E3/00
CPC分类号： G06N3/0675 , G06E1/02
摘要： A parallel architecture matrix algebraic processing system exhibits patterns of arrayed (i) light transmitters and (ii) light receivers that are identical, but at differing scales. Planar arrays of one or more optoelectronic processors--principally semiconductor chips or chip arrays--having both computational and light input/output capabilities optically communicate from one plane to the next through free-space space-invariant optical data distributions--principally lenses and computer-generated holograms--having both replication and distribution capabilities. Each optoelectronic processor, or OP, consists of a number of arrayed optoelectronic processing elements, or OPEs. The OPEs, in turn, typically consist of a number of optoelectronic sub-processing units are preferably electrically interconnected in a tree-based structure, preferably an H-tree. Leaf units include typically one light detector plus local memory, logic circuitry, and electrical input/output. Fanning units typically include local memory, logic circuitry, and electrical input/output. A root unit typically includes electrically-connected local memory, logic circuitry, electrical input/output, and a light transmitter. Vector results of algebraic computations and combinations are flexibly performable in the units of each OPE, and variously optically distributable to other OPEs in successive OPs. The versatile algebraic vector manipulations and vector distributions support primitive functions such as intrinsic and extrinsic vector outer products; operations such as vector-matrix multiplication; and complex systems such as neural networks, fuzzy logic and relational databases. A system of .gtoreq.10.sup.3 fully optically communicating OPEs achieves capacities of 10.sup.6 -10.sup.8 interconnects, and processing speeds of 10.sup.12 interconnects/second.
摘要翻译：并行架构矩阵代数处理系统呈现阵列（i）光发射器和（ii）相同但不同尺度的光接收器的图案。具有计算和光输入/输出能力的一个或多个光电子处理器的平面阵列主要是具有计算和光输入/输出能力的光学通信通过自由空间空间不变的光学数据分布从一个平面到下一个光学通信，主要是透镜和计算机生成的全息图 - 具有复制和分发功能。每个光电处理器或OP由多个阵列的光电处理元件或OPE组成。 OPE通常由多个光电子处理单元组成，优选在基于树的结构中，优选地H-tree电互连。叶单元通常包括一个光检测器加本地存储器，逻辑电路和电输入/输出。扇形单元通常包括本地存储器，逻辑电路和电输入/输出。根单元通常包括电连接的本地存储器，逻辑电路，电输入/输出和光发射器。代数计算和组合的向量结果可以在每个OPE的单元中灵活地执行，并且可以在各个OP中以各种光学方式分配给其他OPE。通用代数向量操纵和向量分布支持原始函数，如内在和外在矢量外积; 诸如矢量矩阵乘法的运算; 和复杂系统，如神经网络，模糊逻辑和关系数据库。全面光通信OPE的系统实现106-108互连的容量，以及1012互连/秒的处理速度。

5. 发明申请

US20130082286A1 Single Photon IR Detectors and Their Integration With Silicon Detectors 有权
标题翻译：单光子红外探测器及其与硅探测器的集成
公开(公告)号：US20130082286A1
公开(公告)日：2013-04-04
申请号：US12502225
申请日：2009-07-13
申请人： Hod Finkelstein , Sadik C. Esener , Yu-Hwa Lo , Kai Zhao , James Cheng , Sifang You
发明人： Hod Finkelstein , Sadik C. Esener , Yu-Hwa Lo , Kai Zhao , James Cheng , Sifang You
IPC分类号： H01L31/12
CPC分类号： H01L31/055 , H01L31/0336 , Y02E10/52
摘要： Apparatuses and systems for photon detection can include a first optical sensing structure structured to absorb light at a first optical wavelength; and a second optical sensing structure engaged with the first optical sensing structure to allow optical communication between the first and the second optical sensing structures. The second optical sensing structure can be structured to absorb light at a second optical wavelength longer than the first optical wavelength and to emit light at the first optical wavelength which is absorbed by the first optical sensing structure. Apparatuses and systems can include a bandgap grading region.
摘要翻译：用于光子检测的装置和系统可以包括被构造为吸收第一光波长的光的第一光学感测结构; 以及与第一光学感测结构接合以允许第一和第二光学感测结构之间的光学通信的第二光学感测结构。第二光学感测结构可被构造为吸收长于第一光学波长的第二光学波长的光并且发射由第一光学感测结构吸收的第一光学波长的光。设备和系统可以包括带隙分级区域。

6. 发明申请

US20110229576A1 HOLLOW SILICA NANOSPHERES AND METHODS OF MAKING SAME 有权
标题翻译：中空二氧化硅纳米粒及其制备方法
公开(公告)号：US20110229576A1
公开(公告)日：2011-09-22
申请号：US12673224
申请日：2008-08-13
申请人： William C. Trogler , Sadik C. Esener , Davorka Messmer , Johan Ulrik Lind , Kristina K.P. Mitchell , Jian Yang
发明人： William C. Trogler , Sadik C. Esener , Davorka Messmer , Johan Ulrik Lind , Kristina K.P. Mitchell , Jian Yang
IPC分类号： A61K9/14 , B32B5/16 , C08J9/26 , C12N5/071 , C12N15/87 , A61K31/7088 , A61K39/00 , A61P37/04 , A61P35/00
CPC分类号： A61K47/6923 , A61K9/0019 , A61K9/14 , A61K9/1611 , A61K9/2009 , A61K9/5115 , A61K9/5192 , A61K39/0011 , A61K47/59 , A61K47/6455 , A61K47/6925 , A61K48/0041 , A61K49/04 , A61K49/183 , A61K2039/53 , A61K2039/6093 , B82Y5/00 , C01B33/12 , C01B33/18 , C12N15/87 , Y10S977/773 , Y10T428/2982
摘要： The disclosure provide hollow nanospheres and methods of making and using the same. The methods and compositions of the disclosure are useful for drug delivery and gene transfer.
摘要翻译：本发明提供中空纳米球及其制备和使用方法。本公开的方法和组合物可用于药物递送和基因转移。

7. 发明授权

US07771630B2 Precise fabrication of polymer microlens arrays 有权
标题翻译：聚合物微透镜阵列的精确制造
公开(公告)号：US07771630B2
公开(公告)日：2010-08-10
申请号：US09792236
申请日：2001-02-23
申请人： Daniel M. Hartmann , Sadik C. Esener , Osman Kibar
发明人： Daniel M. Hartmann , Sadik C. Esener , Osman Kibar
IPC分类号： B29D11/00
CPC分类号： G02B3/0018 , B29D11/00365 , B82Y10/00 , B82Y40/00 , G02B3/0012 , G02B3/0056 , G03F7/0002 , Y10T156/10
摘要： High performance microlens arrays are fabricated by (i) depositing liquid on the hydrophilic domains of substrates of patterned wettability by either (a) condensing liquid on the domains or (b) withdrawing the substrate from a liquid solution and (ii) optionally curing the liquid to form solid microlenses. The f-number (f#) of formed microlenses is controlled by adjusting liquid viscosity, surface tension, density, and index of refraction, as well as the surface free energies of the hydrophobic and hydrophilic areas. The f-number of formed microlenses is also adjustable by controlling substrate dipping angle and withdrawal speed, the array fill factor and the number of dip coats used. At an optimum withdrawal speed f# is minimized and array uniformity is maximized. At this optimum, arrays of f/3.48 microlenses were fabricated using one dip-coat with uniformity better than Δf/f˜±3.8% while multiple dip-coats permit production of f/1.38 microlens arrays and uniformity better than Δf/f˜±5.9%. Average f#s are reproducible to within 3.5%. The method is adaptable and extendible to precision parallel fabrication of (i) microlenses precisely sized, aligned and spatially positioned to various small light sources and optical fiber ends, (ii) conductive bump bonds on substrate pads, and (iii) conductive bonds between corresponding domains on separate perpendicular substrates, all of which are self-aligned.
摘要翻译：通过以下步骤制造高性能微透镜阵列：（i）通过（a）将液体冷凝在畴上，或（b）从液体溶液中取出基底和（ii）任选地固化液体，使液体沉积在具有图案化润湿性的基底的亲水区域上以形成固体微透镜。通过调节液体粘度，表面张力，密度和折射率以及疏水和亲水区域的表面自由能来控制形成的微透镜的f数（f＃）。形成的微透镜的f数也可以通过控制衬底浸渍角度和抽出速度，阵列填充因子和所用浸涂层的数量来调节。在最佳退出速度f＃被最小化并且阵列均匀性最大化。在这个最佳条件下，使用一种比Dgr; f / f〜±3.8％更好的浸渍涂层制造f / 3.48微透镜阵列，而多个浸涂层允许生产f / 1.38微透镜阵列，并且均匀度优于＆Dgr; f /f〜cooper5.9%。平均f＃s可重复到3.5％以内。该方法适用于和可扩展以精确并行制造（i）精确尺寸，对准和空间定位于各种小光源和光纤端的微透镜，（ii）衬底焊盘上的导电凸块接合，以及（iii）相应的导电键分离的垂直基底上的结构域都是自对准的。

8. 发明授权

US07014742B2 Positioning of organic and inorganic objects by electrophoretic forces, including for microlens alignment 失效
公开(公告)号：US07014742B2
公开(公告)日：2006-03-21
申请号：US10099133
申请日：2002-03-15
申请人： Aaron L. Birkbeck , Sadik C. Esener , Mihrimah Ozkan , Erhan Ata
发明人： Aaron L. Birkbeck , Sadik C. Esener , Mihrimah Ozkan , Erhan Ata
IPC分类号： G01N27/447 , G01N27/453 , G02F1/29
CPC分类号： B01D57/02 , B03C5/026 , G02B7/023 , G02B7/027
摘要： An adaptive alignment technique provides precise control and active positioning in, preferably, two-dimensions of sub-millimeter-sized objects such as, in one application, spherical mircolenses through the application of electrophoretic forces in a microfluidic wells. A lithographically patterned microfluidic well and electrodes can be addressed to position or align a spherical microlens to a corresponding laser light beam. The motion of the microlens is preferably controlled using CMOS compatible voltages (3V–1 μA) that are preferably applied to opposite electrodes in the microfluidic well, creating an electrical field in a well solution. By applying voltages to opposed electrode pairs, movement of spherical microlenses with sizes ranging from, most typically, 0.87 μm to 40 μm in directions parallel to the electrode surface is realized. Under a bias of 3 volts, the microspheres have electrophoretic velocities ranging from 13 to 16 μm/s. Optical alignment of the spherical microlens, as is preferably accomplished by use of feedback from a photo detector, serves to position the microlens for maximum efficiency. Microlenses or other optical elements may thus be aligned to optical fibers, VCSELs, LEDs, photodetectors, etc.

9. 发明授权

US08637875B2 Single photon IR detectors and their integration with silicon detectors 有权
标题翻译：单光子红外探测器及其与硅探测器的集成
公开(公告)号：US08637875B2
公开(公告)日：2014-01-28
申请号：US12502225
申请日：2009-07-13
申请人： Hod Finkelstein , Sadik C. Esener , Yu-Hwa Lo , Kai Zhao , James Cheng , Sifang You
发明人： Hod Finkelstein , Sadik C. Esener , Yu-Hwa Lo , Kai Zhao , James Cheng , Sifang You
IPC分类号： H01L31/12
CPC分类号： H01L31/055 , H01L31/0336 , Y02E10/52
摘要： Apparatuses and systems for photon detection can include a first optical sensing structure structured to absorb light at a first optical wavelength; and a second optical sensing structure engaged with the first optical sensing structure to allow optical communication between the first and the second optical sensing structures. The second optical sensing structure can be structured to absorb light at a second optical wavelength longer than the first optical wavelength and to emit light at the first optical wavelength which is absorbed by the first optical sensing structure. Apparatuses and systems can include a bandgap grading region.
摘要翻译：用于光子检测的装置和系统可以包括被构造为吸收第一光波长的光的第一光学感测结构; 以及与第一光学感测结构接合以允许第一和第二光学感测结构之间的光学通信的第二光学感测结构。第二光学感测结构可被构造为吸收长于第一光学波长的第二光学波长的光并且发射由第一光学感测结构吸收的第一光学波长的光。设备和系统可以包括带隙分级区域。

10. 发明授权

US08188563B2 Shallow-trench-isolation (STI)-bounded single-photon CMOS photodetector 有权
标题翻译：浅沟槽隔离（STI）的单光子CMOS光电探测器
公开(公告)号：US08188563B2
公开(公告)日：2012-05-29
申请号：US12374641
申请日：2007-07-21
申请人： Hod Finkelstein , Sadik C. Esener
发明人： Hod Finkelstein , Sadik C. Esener
IPC分类号： H01L29/66
CPC分类号： H01L31/107 , G01S7/4863 , H01L29/0642 , H01L31/02027 , H01L31/0203
摘要： Techniques and apparatus for using single photon avalanche diode (SPAD) devices in various applications.
摘要翻译：在各种应用中使用单光子雪崩二极管（SPAD）器件的技术和设备。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式