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1. 发明授权

US5658809A SOI substrate and method of producing the same 失效
标题翻译： SOI衬底及其制造方法
公开(公告)号：US5658809A
公开(公告)日：1997-08-19
申请号：US403518
申请日：1995-03-13
申请人： Sadao Nakashima , Katsutoshi Izumi , Norihiko Ohwada , Tatsuhiko Katayama
发明人： Sadao Nakashima , Katsutoshi Izumi , Norihiko Ohwada , Tatsuhiko Katayama
IPC分类号： H01L21/76 , H01L21/02 , H01L21/265 , H01L21/31 , H01L21/762 , H01L21/86 , H01L27/00 , H01L27/12
CPC分类号： H01L21/26533 , H01L21/76243
摘要： A method of producing an SOI substrate having a single-crystal silicon layer on a buried oxide layer in an electrically insulating state from the substrate by implanting oxygen ions into a single crystal silicon substrate and practicing an anneal processing in an inert gas atmosphere at high temperatures to form the buried oxide layer. After the anneal processing in which the thickness of the buried oxide layer becomes a theoretical value in conformity with the thickness of the buried oxide layer formed by the implanted oxygen, the oxidation processing of the substrate is carried out in a high temperature oxygen atmosphere.
摘要翻译：一种通过将氧离子注入单晶硅衬底并在高温下在惰性气体气氛中进行退火处理的方法来制造具有电绝缘状态的掩埋氧化层上的单晶硅层的SOI衬底以形成掩埋氧化物层。在掩埋氧化物层的厚度成为与由注入氧形成的掩埋氧化物层的厚度一致的理论值的退火处理之后，基板的氧化处理在高温氧气氛中进行。

2. 发明授权

US5665613A Method of making semiconductor device having SIMOX structure 失效
标题翻译：制造具有SIMOX结构的半导体器件的方法
公开(公告)号：US5665613A
公开(公告)日：1997-09-09
申请号：US458507
申请日：1995-06-02
申请人： Sadao Nakashima , Katsutoshi Izumi , Norihiko Ohwada , Tatsuhiko Katayama
发明人： Sadao Nakashima , Katsutoshi Izumi , Norihiko Ohwada , Tatsuhiko Katayama
IPC分类号： H01L21/76 , H01L21/00 , H01L21/336 , H01L21/762 , H01L21/84 , H01L27/12 , H01L29/78 , H01L29/786
CPC分类号： H01L29/66772 , H01L21/76264 , H01L21/84 , H01L21/76267 , H01L21/76281 , Y10S438/981
摘要： A SIMOX substrate 1 is processed through high temperature oxidation treatment after forming a mask-pattern 3 to shield specified electrodes from oxidation in order to increase partly a thickness of a buffed oxide layer 2 to form an area 4. Next, after an oxide film is removed from the surface of the substrate and LOCOS separation is practiced, MOSFET is produced by fabricating a source S and a drain D on the area 4 or the buffed oxide layer 2. Since the buried oxide layer corresponding to electrodes parts influenced by disadvantages of parasitic capacitance are thickened, an operation speed of an inverter is not much decreased and since mean thickness of the buried oxide layer can be thinner, a decrease of a drain electric current by negative electrical resistance can be suppressed. Furthermore, since the thickness of the buffed oxide layer can be controlled in response to each device, plural devices having different breakdown voltages are formed together on the same substrate.
摘要翻译：在形成掩模图案3之后，通过高温氧化处理来对SIMOX基板1进行处理，以屏蔽规定的电极免受氧化，以部分地增加抛光氧化物层2的厚度以形成区域4.接下来，在氧化膜为从基板表面去除和LOCOS分离，通过在区域4或抛光氧化物层2上制造源极S和漏极D而产生MOSFET。由于对应于电极部分的掩埋氧化物层受寄生的缺点影响电容变厚，逆变器的运转速度不会降低，并且由于埋入氧化物层的平均厚度能够变薄，所以可以抑制由负电阻引起的漏极电流的降低。此外，由于可以响应于每个器件来控制抛光氧化物层的厚度，所以在同一衬底上一起形成具有不同击穿电压的多个器件。

3. 发明授权

US5918136A SOI substrate and method of producing the same 失效
标题翻译： SOI衬底及其制造方法
公开(公告)号：US5918136A
公开(公告)日：1999-06-29
申请号：US915301
申请日：1997-08-19
申请人： Sadao Nakashima , Katsutoshi Izumi , Norihiko Ohwada , Tatsuhiko Katayama
发明人： Sadao Nakashima , Katsutoshi Izumi , Norihiko Ohwada , Tatsuhiko Katayama
IPC分类号： H01L21/76 , H01L21/02 , H01L21/265 , H01L21/31 , H01L21/762 , H01L21/86 , H01L27/00 , H01L27/12
CPC分类号： H01L21/26533 , H01L21/76243
摘要： A method of producing an SOI substrate having a single-crystal silicon layer on a buried oxide layer in an electrically insulating state from the substrate by implanting oxygen ions into a single crystal silicon substrate and practicing an anneal processing in an inert gas atmosphere at high temperatures to form the buried oxide layer. After the anneal processing in which the thickness of the buried oxide layer becomes a theoretical value in conformity with the thickness of the buried oxide layer formed by the implanted oxygen, the oxidation processing of the substrate is carried out in a high temperature oxygen atmosphere.
摘要翻译：一种通过将氧离子注入单晶硅衬底并在高温下在惰性气体气氛中进行退火处理的方法来制造具有电绝缘状态的掩埋氧化层上的单晶硅层的SOI衬底以形成掩埋氧化物层。在掩埋氧化物层的厚度成为与由注入氧形成的掩埋氧化物层的厚度一致的理论值的退火处理之后，基板的氧化处理在高温氧气氛中进行。

4. 发明授权

US06743729B2 Etching method and etching apparatus of carbon thin film 失效
标题翻译：碳薄膜蚀刻方法和蚀刻装置
公开(公告)号：US06743729B2
公开(公告)日：2004-06-01
申请号：US10076360
申请日：2002-02-19
申请人： Katsutoshi Izumi , Keiji Mine , Yoshiaki Ohbayashi , Fumihiko Jobe
发明人： Katsutoshi Izumi , Keiji Mine , Yoshiaki Ohbayashi , Fumihiko Jobe
IPC分类号： H01L21302
CPC分类号： H01L21/033 , H01L21/31122 , H01L21/31138 , H01L21/31144 , Y10S156/914
摘要： The present invention relates to etching for removing a carbon thin film formed on a surface of a sample, to prevent a damage on a sample and eliminate the necessity of providing a special device (such as vacuum pump) as is required in plasma etching. A sealed reaction chamber 100A in which a sample 500 formed with a carbon thin film 510 on its surface is to be set, a gas feed means 200A for feeding argon gas which is an inert gas Ar into which a predetermined proportion of oxygen gas O2 has been mixed from one end to the interior of the reaction chamber 100A, an exhaust means 300A for discharging carbon dioxide gas CO2 from the downstream side of the inert gas Ar fed from the gas feed means 200A, and a heating means 400A for heating the sample 500 to 550° C. or higher are provided.
摘要翻译：本发明涉及用于去除在样品表面上形成的碳薄膜的蚀刻，以防止对样品的损伤，并且消除了如等离子体蚀刻所需要的特殊装置（例如真空泵）的必要性。密封反应室100A，其中要设置表面上形成有碳薄膜510的样品500，用于供给作为惰性气体Ar的氩气的气体供给装置200A，其中预定比例的氧气O2具有从反应室100A的一端到内部混合有从气体供给装置200A供给的惰性气体Ar的下游侧排出二氧化碳CO 2的排气装置300A，以及加热装置提供500至550℃或更高。

5. 发明授权

US08563442B2 Method for manufacturing nitrogen compound semiconductor substrate and nitrogen compound semiconductor substrate, and method for manufacturing single crystal SiC substrate and single crystal SiC substrate 有权
标题翻译：氮化合物半导体衬底和氮化合物半导体衬底的制造方法以及单晶SiC衬底和单晶SiC衬底的制造方法
公开(公告)号：US08563442B2
公开(公告)日：2013-10-22
申请号：US12997013
申请日：2009-06-09
申请人： Keisuke Kawamura , Katsutoshi Izumi , Hidetoshi Asamura , Takashi Yokoyama
发明人： Keisuke Kawamura , Katsutoshi Izumi , Hidetoshi Asamura , Takashi Yokoyama
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/8258 , C30B25/02 , C30B29/36 , C30B29/403 , H01L21/02381 , H01L21/02447 , H01L21/0254 , H01L21/02614 , H01L21/8213
摘要： In order to provide a method for manufacturing a single crystal SiC substrate that can obtain an SiC layer with good crystallinity, an Si substrate 1 having a surface Si layer 3 of a predetermined thickness and an embedded insulating layer 4 is prepared, and when the Si substrate 1 is heated in a carbon-series gas atmosphere to convert the surface Si layer 3 into a single crystal SiC layer 6, the Si layer in the vicinity of an interface 8 with the embedded insulating layer 4 is left as a residual Si layer 5.
摘要翻译：为了提供可以得到具有良好结晶性的SiC层的单晶SiC衬底的制造方法，制备具有预定厚度的表面Si层3和嵌入绝缘层4的Si衬底1，并且当Si 将基板1在碳系气体气氛中加热，将表面Si层3转换为单晶SiC层6，将与嵌入绝缘层4的界面8附近的Si层作为残留Si层5 。

6. 发明申请

US20110089433A1 METHOD FOR MANUFACTURING NITROGEN COMPOUND SEMICONDUCTOR SUBSTRATE AND NITROGEN COMPOUND SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING SINGLE CRYSTAL SIC SUBSTRATE AND SINGLE CRYSTAL SIC SUBSTRATE 有权
标题翻译：制造氮化合物半导体衬底和氮化物半导体衬底的方法以及制造单晶SIC衬底和单晶SIC衬底的方法
公开(公告)号：US20110089433A1
公开(公告)日：2011-04-21
申请号：US12997013
申请日：2009-06-09
申请人： Keisuke Kawamura , Katsutoshi Izumi , Hidetoshi Asamura , Takashi Yokoyama
发明人： Keisuke Kawamura , Katsutoshi Izumi , Hidetoshi Asamura , Takashi Yokoyama
IPC分类号： H01L29/24 , C30B25/02 , C30B25/10 , C30B29/06 , C30B29/36
CPC分类号： H01L21/8258 , C30B25/02 , C30B29/36 , C30B29/403 , H01L21/02381 , H01L21/02447 , H01L21/0254 , H01L21/02614 , H01L21/8213
摘要： In order to provide a method for manufacturing a single crystal SiC substrate that can obtain an SiC layer with good crystallinity, an Si substrate 1 having a surface Si layer 3 of a predetermined thickness and an embedded insulating layer 4 is prepared, and when the Si substrate 1 is heated in a carbon-series gas atmosphere to convert the surface Si layer 3 into a single crystal SiC layer 6, surface Si layer 3 into a single crystal SIC layer 6, the Si layer in the vicinity of an interface 8 with the embedded insulating layer 4 is left as a residual Si layer 5.
摘要翻译：为了提供可以得到具有良好结晶性的SiC层的单晶SiC衬底的制造方法，制备具有预定厚度的表面Si层3和嵌入绝缘层4的Si衬底1，并且当Si 将基板1在碳系气体气氛中加热，将表面Si层3变为单晶SiC层6，将表面Si层3转换为单晶SIC层6，在界面8附近的Si层与留下绝缘层4作为残留Si层5。

7. 发明申请

US20050148108A1 Manufacturing method of monocrystalline gallium nitride localized substrate 失效
标题翻译：单晶氮化镓局部衬底的制造方法
公开(公告)号：US20050148108A1
公开(公告)日：2005-07-07
申请号：US11055985
申请日：2005-02-14
申请人： Katsutoshi Izumi , Motoi Nakao , Yoshiaki Ohbayashi , Keiji Mine , Seisaku Hirai , Fumihiko Jobe , Tomoyuki Tanaka
发明人： Katsutoshi Izumi , Motoi Nakao , Yoshiaki Ohbayashi , Keiji Mine , Seisaku Hirai , Fumihiko Jobe , Tomoyuki Tanaka
IPC分类号： C30B29/38 , C30B25/02 , H01L21/20 , H01L21/205 , H01L21/00 , C30B1/00 , H01L29/24 , H01L33/00
CPC分类号： C30B25/02 , C30B29/406 , H01L21/02381 , H01L21/02447 , H01L21/0254 , H01L21/02639
摘要： There is provided a monocrystalline gallium nitride localized substrate suitable for manufacturing electronic-optical united devices in which electronic devices and optical devices are mixedly mounted on the same silicon substrate. An area in which monocrystalline gallium nitride 410 is grown is locally present on a silicon substrate 100 by forming silicon carbide 200 on the silicon substrate 100 to locally form the monocrystalline gallium nitride 410 on the above-mentioned silicon carbide 200. Silicon nitride 220 is used as a mask in forming the above-mentioned monocrystalline gallium nitride 410.
摘要翻译：提供了适用于制造电子器件和光学器件混合安装在同一硅衬底上的电子 - 光学联合器件的单晶氮化镓局部衬底。单晶氮化镓410生长的区域通过在硅衬底100上形成碳化硅200而在硅衬底100上局部存在，以在上述碳化硅200上局部形成单晶氮化镓410。在形成上述单晶氮化镓410时，使用氮化硅220作为掩模。

8. 发明授权

US5225356A Method of making field-effect semiconductor device on SOT 失效
标题翻译：在SOT上制造场效应半导体器件的方法
公开(公告)号：US5225356A
公开(公告)日：1993-07-06
申请号：US815815
申请日：1991-12-30
申请人： Yasuhisa Omura , Katsutoshi Izumi
发明人： Yasuhisa Omura , Katsutoshi Izumi
IPC分类号： H01L21/336 , H01L29/786
CPC分类号： H01L29/66772 , H01L29/78651 , Y10S148/15 , Y10S438/911
摘要： A field-effect semiconductor device of this invention includes a first insulating film formed on a semiconductor substrate, a source region of a second conductivity type and a drain region of the second conductivity type, which are arranged on the insulating film and are formed on both the sides of a semiconductor active layer of a first conductivity type, a second insulating film for covering the top and side surfaces of the semiconductor active layer, the source region, and the drain region, a gate electrode arranged on the second insulating film corresponding to the semiconductor active layer, a non-oxidizable third insulating film arranged on the second insulating film for covering the side surfaces of the semiconductor active layer and the source and drain regions, and the other regions, a fourth insulating film arranged on the non-oxidizable third insulating film, a fifth insulating film for covering a portion of the third insulating film located on the side surfaces of the source and drain regions, the fourth insulating film, the semiconductor active layer, the second insulating film arranged on the top surfaces of the source and drain regions, and a gate electrode arranged on the second insulating film, and a source electrode and a drain electrode arranged on the fifth insulating film and connected to the source region and the drain region, respectively, through contact holes formed in the fifth insulating film and the second insulating film.
摘要翻译：本发明的场效应半导体器件包括形成在半导体衬底上的第一绝缘膜，第二导电类型的源极区和第二导电类型的漏极区，它们布置在绝缘膜上并形成在两者上第一导电类型的半导体有源层的侧面，用于覆盖半导体有源层，源极区域和漏极区域的顶表面和侧表面的第二绝缘膜，布置在对应于第二绝缘膜的第二绝缘膜上的栅电极所述半导体活性层，布置在所述第二绝缘膜上用于覆盖所述半导体有源层和源极和漏极区域的侧表面的不可氧化的第三绝缘膜和其它区域，布置在不可氧化的第四绝缘膜上的第四绝缘膜第三绝缘膜，用于覆盖位于所述源的侧表面上的所述第三绝缘膜的一部分的第五绝缘膜 e和漏极区域，第四绝缘膜，半导体有源层，布置在源极和漏极区域的顶表面上的第二绝缘膜，以及布置在第二绝缘膜上的栅电极，以及源电极和漏电极配置在第五绝缘膜上，分别通过形成在第五绝缘膜和第二绝缘膜中的接触孔连接到源极区域和漏极区域。

9. 发明授权

US07077875B2 Manufacturing device for buried insulating layer type single crystal silicon carbide substrate 失效
标题翻译：埋层绝缘层型单晶碳化硅基板制造装置
公开(公告)号：US07077875B2
公开(公告)日：2006-07-18
申请号：US11050683
申请日：2005-02-07
申请人： Katsutoshi Izumi , Motoi Nakao , Yoshiaki Ohbayashi , Keiji Mine , Seisaku Hirai , Fumihiko Jobe , Tomoyuki Tanaka
发明人： Katsutoshi Izumi , Motoi Nakao , Yoshiaki Ohbayashi , Keiji Mine , Seisaku Hirai , Fumihiko Jobe , Tomoyuki Tanaka
IPC分类号： H01L21/00 , H01L21/64
CPC分类号： H01L21/7624 , C23C16/0218 , C23C16/0236 , C23C16/325 , C23C16/482 , C30B1/10 , C30B29/36 , H01L21/02381 , H01L21/02491 , H01L21/02529 , H01L21/02614 , H01L21/0445 , H01L21/2007 , H01L21/7602 , Y10T29/41
摘要： Provided is a manufacturing method of a buried insulating layer type semiconductor silicon carbide substrate excellent in flatness of an interfaces in contact the insulating layer and a manufacturing device thereof. In the manufacturing device, an SOI substrate having a buried insulating layer positioned on a silicon substrate and a surface silicon layer formed on this buried insulating layer is placed in this film formation chamber. The manufacturing device includes: the film formation chamber in which the SOI substrate is placed; a gas supplying unit for supplying various types of gasses required for the manufacturing of a buried insulating layer type semiconductor silicon carbide substrate into the film formation chamber; an infrared ray irradiating unit for irradiating the surface silicon layer of the SOI substrate with infrared rays; and a control part for controlling the gas supplying unit and the infrared ray irradiating unit.
摘要翻译：提供一种绝缘层与其制造装置接触的界面的平坦度优异的掩埋绝缘层型半导体碳化硅基板的制造方法。在制造装置中，在该成膜室中配置具有位于硅衬底上的埋入绝缘层和形成在该埋置绝缘层上的表面硅层的SOI衬底。制造装置包括：成膜室，其中放置SOI基板; 气体供给单元，用于将掩模绝缘层型半导体碳化硅基板的制造所需的各种气体供给到成膜室中; 红外线照射单元，其用红外线照射SOI衬底的表面硅层; 以及用于控制气体供给单元和红外线照射单元的控制部。

10. 发明授权

US06927144B2 Method for manufacturing buried insulating layer type single crystal silicon carbide substrate 失效
标题翻译：掩埋绝缘层型单晶碳化硅基板的制造方法
公开(公告)号：US06927144B2
公开(公告)日：2005-08-09
申请号：US10708593
申请日：2004-03-12
申请人： Katsutoshi Izumi , Motoi Nakao , Yoshiaki Ohbayashi , Keiji Mine , Seisaku Hirai , Fumihiko Jobe , Tomoyuki Tanaka
发明人： Katsutoshi Izumi , Motoi Nakao , Yoshiaki Ohbayashi , Keiji Mine , Seisaku Hirai , Fumihiko Jobe , Tomoyuki Tanaka
IPC分类号： C30B29/36 , H01L21/02 , H01L21/04 , H01L21/20 , H01L21/205 , H01L21/76 , H01L21/762 , H01L27/12
CPC分类号： H01L21/7624 , C23C16/0218 , C23C16/0236 , C23C16/325 , C23C16/482 , C30B1/10 , C30B29/36 , H01L21/02381 , H01L21/02491 , H01L21/02529 , H01L21/02614 , H01L21/0445 , H01L21/2007 , H01L21/7602 , Y10T29/41
摘要： Provided is a manufacturing method of a buried insulating layer type semiconductor silicon carbide substrate excellent in flatness of an interfaces in contact the insulating layer and a manufacturing device thereof. In the manufacturing device, an SOI substrate having a buried insulating layer positioned on a silicon substrate and a surface silicon layer formed on this buried insulating layer is placed in this film formation chamber. The manufacturing device includes: the film formation chamber in which the SOI substrate is placed; a gas supplying unit for supplying various types of gasses required for the manufacturing of a buried insulating layer type semiconductor silicon carbide substrate into the film formation chamber; an infrared ray irradiating unit for irradiating the surface silicon layer of the SOI substrate with infrared rays; and a control part for controlling the gas supplying unit and the infrared ray irradiating unit.
摘要翻译：提供一种绝缘层与其制造装置接触的界面的平坦度优异的掩埋绝缘层型半导体碳化硅基板的制造方法。在制造装置中，在该成膜室中配置具有位于硅衬底上的埋入绝缘层和形成在该埋置绝缘层上的表面硅层的SOI衬底。制造装置包括：成膜室，其中放置SOI基板; 气体供给单元，用于将掩模绝缘层型半导体碳化硅基板的制造所需的各种气体供给到成膜室中; 红外线照射单元，其用红外线照射SOI衬底的表面硅层; 以及用于控制气体供给单元和红外线照射单元的控制部。

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