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1. 发明授权

US10988688B2 Method for manufacturing quantum dot 有权
公开(公告)号：US10988688B2
公开(公告)日：2021-04-27
申请号：US15666557
申请日：2017-08-01
申请人： STANLEY ELECTRIC CO., LTD.
发明人： Takuya Kazama , Wataru Tamura , Yasuyuki Miyake
IPC分类号： C09K11/64 , C09K11/08 , C09K11/56 , H01L33/32 , C09K11/62 , C09K11/02 , B82Y5/00 , C30B7/14 , C30B29/40 , H01L33/50 , B82Y20/00 , B82Y40/00
摘要： A quantum dot manufacturing method comprises (a) dispersing, in a solvent, nano-seed particles whose crystal planes are exposed, and (b) growing semiconductor layers on the exposed crystal planes of the nano-seed particles in the solvent.

2. 发明授权

US08653552B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US08653552B2
公开(公告)日：2014-02-18
申请号：US13774996
申请日：2013-02-22
申请人： Stanley Electric Co., Ltd.
发明人： Takuya Kazama
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/38 , H01L33/382
摘要： The light-emitting device includes a groove passing through a second semiconductor layer and a light-emitting layer to reach a first semiconductor layer; a first ohmic electrode in contact with the first semiconductor layer within the groove; a connection electrode passing through the first semiconductor layer from the surface thereof and electrically connected to the first ohmic electrode; an insulating layer for covering the second semiconductor layer on a surface thereof opposing the first semiconductor layer, the insulating layer having an opening; a second ohmic electrode in contact with the second semiconductor layer in the opening; a metal layer formed over the insulating layer, and connected to the second ohmic electrode; and a support bonded to the metal layer.
摘要翻译：发光器件包括通过第二半导体层和发光层的沟槽以到达第一半导体层; 与槽内的第一半导体层接触的第一欧姆电极; 连接电极从其表面穿过第一半导体层并电连接到第一欧姆电极; 绝缘层，用于在与第一半导体层相对的表面上覆盖第二半导体层，绝缘层具有开口; 与开口中的第二半导体层接触的第二欧姆电极; 形成在所述绝缘层上并连接到所述第二欧姆电极的金属层; 和与金属层接合的载体。

3. 发明授权

US10032955B2 Quantum dot having core-shell structure 有权
公开(公告)号：US10032955B2
公开(公告)日：2018-07-24
申请号：US15698047
申请日：2017-09-07
申请人： STANLEY ELECTRIC CO., LTD.
发明人： Takuya Kazama , Wataru Tamura , Yasuyuki Miyake
IPC分类号： H01L29/06 , H01L33/06 , H01L33/00 , C30B29/48 , C30B29/40 , C30B29/16 , C30B29/60 , B82Y30/00 , H01L21/00 , C30B29/68 , C30B7/14 , B82Y40/00 , B82Y20/00
摘要： A quantum dot having core-shell structure, including a core formed of ZnOzS1-z of wurtzite crystal structure of hexagonal crystal system; a first shell covering the core, and formed of AlxGayIn1-x-yN of wurtzite crystal structure of hexagonal crystal system; and a second shell covering the first shell, and formed of ZnOvS1-v of wurtzite crystal structure of hexagonal crystal system. At least one of v, x, y, and z is not zero and is not one; differences between the lattice constants along a-axis of the core, the first shell and the second shell are not greater than 1%; and the core, the first shell and the second shell form band offset structure of type II.

4. 发明授权

US09773942B2 Quantum dot having core-shell structure 有权
公开(公告)号：US09773942B2
公开(公告)日：2017-09-26
申请号：US15000872
申请日：2016-01-19
申请人： STANLEY ELECTRIC CO., LTD.
发明人： Takuya Kazama , Wataru Tamura , Yasuyuki Miyake
IPC分类号： H01L31/00 , H01L33/06 , H01L33/00 , B82Y30/00 , C30B7/14 , C30B29/16 , C30B29/40 , C30B29/48 , C30B29/60 , C30B29/68 , H01L21/00 , B82Y20/00 , B82Y40/00
CPC分类号： H01L33/06 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C09K11/565 , C09K11/64 , C30B7/14 , C30B29/16 , C30B29/403 , C30B29/48 , C30B29/60 , C30B29/68 , H01L21/00 , H01L33/002 , H01L33/005
摘要： A quantum dot having core-shell structure includes a core formed of ZnOzS1-z, and at least one shell covering the core, and formed of AlxGayIn1-x-yN, wherein at least one of x, y, and z is not zero and is not one.

5. 发明授权

US09112113B2 Semiconductor element and manufacturing method thereof 有权
标题翻译：半导体元件及其制造方法
公开(公告)号：US09112113B2
公开(公告)日：2015-08-18
申请号：US13772027
申请日：2013-02-20
申请人： STANLEY ELECTRIC CO., LTD.
发明人： Takuya Kazama
IPC分类号： H01L33/38 , H01L33/40 , H01L33/02 , H01L21/02 , H01L33/46 , H01L33/22 , H01L33/00
CPC分类号： H01L33/38 , H01L21/02694 , H01L21/02697 , H01L33/0079 , H01L33/02 , H01L33/22 , H01L33/405 , H01L33/46 , H01L2933/0091
摘要： A manufacturing method of a semiconductor element which can improve productivity and reliability, comprises a step of forming a device structure layer including a semiconductor layer on a first substrate; a step of forming a first metal layer on the device structure layer; a step of forming a second metal layer made of the same material as the first metal layer on a second substrate; a first treatment step of heating and compressing together the first metal layer and the second metal layer placed opposite to each other, thereby bonding them with maintaining a junction interface between the first and second metal layers; and a second treatment step of heating the first and second metal layers to make the junction interface disappear. Either one of the first and second metal layers has a coarse surface having multiple pyramid-shaped protrusions formed at its surface.
摘要翻译：可以提高生产率和可靠性的半导体元件的制造方法包括在第一基板上形成包括半导体层的器件结构层的步骤; 在所述器件结构层上形成第一金属层的步骤; 在第二基板上形成与第一金属层相同的材料制成的第二金属层的步骤; 第一处理步骤，将彼此相对放置的第一金属层和第二金属层加热和压缩在一起，从而在维持第一和第二金属层之间的接合界面的情况下将它们接合; 以及加热第一和第二金属层以使接合界面消失的第二处理步骤。第一和第二金属层中的任一个具有在其表面上形成的具有多个金字塔形突起的粗糙表面。

6. 发明授权

US08963172B2 Optical semiconductor device including antiparallel semiconductor light-emitting element and Schottky diode element 有权
标题翻译：包括反平行半导体发光元件和肖特基二极管元件的光学半导体器件
公开(公告)号：US08963172B2
公开(公告)日：2015-02-24
申请号：US14194071
申请日：2014-02-28
申请人： Stanley Electric Co., Ltd.
发明人： Takuya Kazama
IPC分类号： H01L29/18 , H01L25/16 , H01L25/075
CPC分类号： H01L25/167 , H01L25/0753 , H01L2224/13 , H01L2924/12032 , H01L2924/00
摘要： An optical semiconductor device includes a semiconductor support substrate of a conductivity type having a first resistivity, a semiconductor layer of the conductivity type formed on the semiconductor support substrate and having a second resistivity higher than the first resistivity, a first power supply terminal having a first metal in Schottky barrier contact with the semiconductor layer along with the semiconductor support substrate, so that a Schottky diode element is constructed by the first power supply terminal and the semiconductor layer along with the semiconductor support substrate, a second power supply terminal having a second metal in ohmic contact with the semiconductor support substrate, and a semiconductor light-emitting element connected between the first and second power supply terminals, the semiconductor light-emitting element being antiparallel with the Schottky diode with respect to the first and second power supply terminals.
摘要翻译：光半导体器件包括具有第一电阻率的导电类型的半导体支撑衬底，形成在半导体支撑衬底上的具有比第一电阻率高的第二电阻率的导电类型的半导体层，第一电源端子，具有第一电阻肖特基势垒中的金属与半导体支撑衬底一起与半导体层接触，使得肖特基二极管元件与半导体支撑衬底一起由第一电源端子和半导体层构成，第二电源端子具有第二金属与半导体支撑基板欧姆接触，以及连接在第一和第二电源端子之间的半导体发光元件，半导体发光元件相对于第一和第二电源端子与肖特基二极管反平行。

7. 发明授权

US09634200B2 Semiconductor light emitting device 有权
公开(公告)号：US09634200B2
公开(公告)日：2017-04-25
申请号：US14990433
申请日：2016-01-07
申请人： STANLEY ELECTRIC CO., LTD.
发明人： Takuya Kazama , Wataru Tamura , Yasuyuki Miyake
IPC分类号： H01L33/00 , H01L33/50 , H01L33/06 , H01L33/32 , H01L33/38 , H01L33/60 , B82Y20/00
CPC分类号： H01L33/502 , B82Y20/00 , H01L33/06 , H01L33/32 , H01L33/382 , H01L33/501 , H01L33/505 , H01L33/60 , H01L2933/0083 , Y10S977/774 , Y10S977/95
摘要： A semiconductor light emitting device comprises a supporting substrate that has light reflecting characteristics; a wavelength conversion layer that is disposed on the supporting substrate, and contains semiconductor nanoparticles developing a quantum size effect; an optical semiconductor laminate that is disposed on the wavelength conversion layer and has light emitting characteristics; and a photonic crystal layer that is disposed on the optical semiconductor laminate, and that has first portions having a first refractive index and second portions having a second refractive index different from the first refractive index, the first portions and the second portions being arranged in a two-dimensional cyclic pattern.

8. 发明授权

US09136435B2 Semiconductor light-emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：US09136435B2
公开(公告)日：2015-09-15
申请号：US14255828
申请日：2014-04-17
申请人： STANLEY ELECTRIC CO., LTD.
发明人： Takuya Kazama
IPC分类号： H01L33/14 , H01L33/00 , H01L21/00 , H01L33/38 , H01L33/40
CPC分类号： H01L33/38 , H01L33/0079 , H01L33/405
摘要： A semiconductor light-emitting element includes a support substrate, a semiconductor film including a light-emitting layer provided on the support substrate, a surface electrode provided on a light-extraction-surface-side surface of the semiconductor film, and a light-reflecting layer provided between the support substrate and the semiconductor film, forming a light-reflecting surface. The surface electrode includes a first electrode piece and a second electrode piece. The light-reflecting layer includes a reflection electrode including a third electrode piece and a fourth electrode piece. The first electrode piece and the third electrode piece are arranged so as to not overlap when projected onto a projection surface parallel to a principal surface of the semiconductor film, and the shortest distance between the first electrode piece and the fourth electrode piece, is greater than the shortest distance between the first electrode piece and the third electrode piece.
摘要翻译：半导体发光元件包括支撑衬底，包括设置在支撑衬底上的发光层的半导体膜，设置在半导体膜的光提取表面侧表面上的表面电极和反射光层，设置在支撑基板和半导体膜之间，形成光反射表面。表面电极包括第一电极片和第二电极片。光反射层包括具有第三电极片和第四电极片的反射电极。第一电极片和第三电极片被布置成当投影到与半导体膜的主表面平行的突出表面上时不重叠，并且第一电极片和第四电极片之间的最短距离大于第一电极片和第三电极片之间的最短距离。

9. 发明授权

US08981409B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08981409B2
公开(公告)日：2015-03-17
申请号：US13954869
申请日：2013-07-30
申请人： Stanley Electric Co., Ltd.
发明人： Takuya Kazama
IPC分类号： H01L33/00 , H01L33/22 , H01L33/20 , H01L33/38
CPC分类号： H01L33/22 , H01L33/20 , H01L33/38 , H01L33/382
摘要： A semiconductor light emitting device comprises a first groove extending to a first semiconductor layer from a second semiconductor layer side through the second semiconductor layer and a light emitting layer; a first ohmic electrode formed in contact with the first semiconductor layer in the first groove; an insulating layer covering a surface of the second semiconductor layer and at least the surface of part of the light emitting layer exposed in the first groove; a metal layer covering the surface of the insulating layer and connected to the first ohmic electrode; a second groove extending from a first semiconductor layer side through the first semiconductor layer and the light emitting layer to the second semiconductor layer; a second ohmic electrode formed in contact with the second semiconductor layer in the second groove; and a support body bonded to the metal layer via a junction layer.
摘要翻译：半导体发光器件包括从第二半导体层侧穿过第二半导体层延伸到第一半导体层的第一凹槽和发光层; 形成为与所述第一沟槽中的所述第一半导体层接触的第一欧姆电极; 绝缘层，覆盖第二半导体层的表面和暴露在第一凹槽中的至少一部分发光层的表面; 覆盖绝缘层的表面并连接到第一欧姆电极的金属层; 从第一半导体层侧穿过第一半导体层和发光层延伸到第二半导体层的第二凹槽; 形成为与第二沟槽中的第二半导体层接触的第二欧姆电极; 以及经由接合层与金属层接合的支撑体。

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