专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

2. 发明申请

US20160153091A1 Heating Device and Plasma Processing Apparatus Provided Therewith 审中-公开
标题翻译：加热装置及等离子体处理装置
公开(公告)号：US20160153091A1
公开(公告)日：2016-06-02
申请号：US14900535
申请日：2014-03-31
申请人： SPP TECHNOLOGIES CO., LTD.
发明人： Toshihiro Hayami , Ryosuke Fujii
IPC分类号： C23C16/56
CPC分类号： C23C16/56 , H01L21/67103 , H01L21/68742 , H05B3/68
摘要： A heating device capable of efficiently heating an object to be heated with a small heating element and a plasma processing apparatus provided with the heating device are provided. A plasma processing apparatus 1 includes a processing chamber 2 having a plasma generating space 3a defined in an upper portion thereof and a processing space 4a defined in a lower portion thereof, a platen 9 disposed in the processing space 4a for placing a substrate K thereon, a processing gas supply unit 7 supplying a processing gas into the plasma generating space 3a, a plasma generating unit 5 generating plasma from the processing gas supplied into the plasma generating space 3a by RF power, a plasma-generation RF power supply 6 supplying RF power to the plasma generating unit 5, and a heating device 13. The heating device 13 is composed of a heating element 14 including a conductor having a product ρ·μ [Ω·H] of its electrical resistivity ρ [Ω·m] and its magnetic permeability μ [H/m] equal to or greater than 8.0×10−13, and a heating RF power supply 16 supplying RF power to the heating element 14.
摘要翻译：提供了一种能够用小型加热元件有效地加热待加热物体的加热装置和设置有加热装置的等离子体处理装置。等离子体处理装置1包括具有限定在其上部的等离子体产生空间3a和限定在其下部的处理空间4a的处理室2，设置在处理空间4a中的用于将基板K放置在其上的压板9，将处理气体供给到等离子体产生空间3a中的处理气体供给单元7，通过RF功率从供给到等离子体生成空间3a的处理气体产生等离子体的等离子体生成单元5，提供RF功率的等离子体生成用RF电源6 等离子体发生单元5和加热装置13.加热装置13由包括导电体的加热元件14组成，该导体具有其电阻率＆rgr;μ[＆OHgr·H] [＆OHgr;·m]，其磁导率μ[H / m]等于或大于8.0×10-13，以及向加热元件14提供RF功率的加热RF电源16。

IPRDB

热门服务

关于我们

友情链接

联系方式