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1. 发明申请

US20090071406A1 COOLED BACKING PLATE 审中-公开
标题翻译：冷却背板
公开(公告)号：US20090071406A1
公开(公告)日：2009-03-19
申请号：US11858020
申请日：2007-09-19
申请人： SOO YOUNG CHOI , Robin L. Tiner , John M. White
发明人： SOO YOUNG CHOI , Robin L. Tiner , John M. White
IPC分类号： C23C16/00
CPC分类号： C23C16/45572 , C03C17/002 , C03C17/02 , C03C17/245 , C03C2217/213 , C03C2218/153 , C23C16/4411 , C23C16/505
摘要： A plasma enhanced chemical vapor deposition chamber (PECVD) which includes a backing plate that provides support to a diffuser. The backing plate includes a plurality of fluid conduits adapted for circulation of a cooling fluid therethrough to remove excess heat generated in the chamber by the plasma to thereby maintain the backing plate in a stable condition thereby maintaining the diffuser in a stable position during the deposition of material from the plasma.
摘要翻译：等离子体增强化学气相沉积室（PECVD），其包括提供对扩散器的支撑的背板。背板包括适于使冷却流体循环通过其中的多个流体导管，以通过等离子体去除腔室中产生的多余热量，从而将背板保持在稳定状态，从而在沉积期间将扩散器保持在稳定的位置来自等离子体的材料

2. 发明申请

US20090053847A1 METHODS AND APPARATUS FOR DEPOSITING A MICROCRYSTALLINE SILICON FILM FOR PHOTOVOLTAIC DEVICE 失效
标题翻译：用于光伏器件沉积微晶硅膜的方法和装置
公开(公告)号：US20090053847A1
公开(公告)日：2009-02-26
申请号：US12258194
申请日：2008-10-24
申请人： SOO YOUNG CHOI , Takako Takehara , John M. White , Yong Kee Chae
发明人： SOO YOUNG CHOI , Takako Takehara , John M. White , Yong Kee Chae
IPC分类号： H01L31/105
CPC分类号： H01L21/02579 , C23C16/24 , C30B25/105 , C30B29/06 , H01J37/32082 , H01J37/32449 , H01J37/32495 , H01L21/0237 , H01L21/02532 , H01L21/02576 , H01L21/0262 , H01L31/1824 , Y02E10/545 , Y02P70/521
摘要： Methods for depositing a microcrystalline silicon film layer with improved deposition rate and film quality are provided in the present invention. Also, a photovoltaic (PV) cell having a microcrystalline silicon film is provided. In one embodiment, the method produces a microcrystalline silicon film on a substrate at a deposition rate greater than about 20 nm per minute, wherein the microcrystalline silicon film has a crystallized volume between about 20 percent to about 80 percent.
摘要翻译：在本发明中提供了具有改进的沉积速率和膜质量的沉积微晶硅膜层的方法。此外，提供具有微晶硅膜的光伏（PV）电池。在一个实施例中，该方法以大于约20nm /分钟的沉积速率在衬底上产生微晶硅膜，其中微晶硅膜的结晶体积在约20％至约80％之间。

3. 发明申请

US20090208668A1 FORMATION OF CLEAN INTERFACIAL THIN FILM SOLAR CELLS 审中-公开
标题翻译：形成清洁的界面薄膜太阳能电池
公开(公告)号：US20090208668A1
公开(公告)日：2009-08-20
申请号：US12033240
申请日：2008-02-19
申请人： SOO YOUNG CHOI , John M. White
发明人： SOO YOUNG CHOI , John M. White
IPC分类号： C23C16/44
CPC分类号： C23C16/54 , C23C16/4405 , H01L21/67207 , H01L21/67236
摘要： A “three” chamber design multi-chamber cluster processing system which is used in the fabrication of a solar cell-comprising substrate. The processing system includes at least one PECVD processing chamber configured to deposit a p-doped layer, at least three PECVD processing chambers configured to deposit an i-layer, and at least one PECVD processing chamber configured to deposit an n-doped layer. The processing system also includes at least one central substrate transferring chamber which is typically located substantially equidistant from each of the PECVD processing chambers, and a transfer robot present in the central transferring chamber which is capable of paired transfer of substrates. An apparatus which provides a source of fluorine-comprising reactive species is in communication with each of said PECVD processing chambers.
摘要翻译：一种用于制造含太阳能电池的基板的“三”室设计的多室丛集处理系统。处理系统包括至少一个PECVD处理室，其被配置为沉积p掺杂层，配置成沉积i层的至少三个PECVD处理室和被配置为沉积n掺杂层的至少一个PECVD处理室。处理系统还包括至少一个中心衬底传送室，该中心衬底传送室通常位于与每个PECVD处理室基本等距的位置，以及存在于中心传送室中的能够成对传送衬底的传送机械手。提供含氟反应性物质源的装置与每个所述PECVD处理室连通。

4. 发明申请

US20090104376A1 GAS DIFFUSION SHOWER HEAD DESIGN FOR LARGE AREA PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION 有权
标题翻译：气体扩散淋浴头设计用于大面积等离子体增强化学蒸气沉积
公开(公告)号：US20090104376A1
公开(公告)日：2009-04-23
申请号：US12254742
申请日：2008-10-20
申请人： SOO YOUNG CHOI , John M. White , Robert I. Greene
发明人： SOO YOUNG CHOI , John M. White , Robert I. Greene
IPC分类号： C23C16/513 , B08B6/00
CPC分类号： C23C16/45559 , B05B1/005 , C23C16/4405 , C23C16/45565 , H01J37/3244
摘要： Embodiments of a gas distribution plate for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. At least one of the gas passages has a right cylindrical shape for a portion of its length extending from the upstream side and a coaxial conical shape for the remainder length of the diffuser plate, the upstream end of the conical portion having substantially the same diameter as the right cylindrical portion and the downstream end of the conical portion having a larger diameter. The gas distribution plate is relatively easy to manufacture and provides good chamber cleaning rate, good thin film deposition uniformity and good thin film deposition rate. The gas distribution plate also has the advantage of reduced chamber cleaning residues on the diffuser surface and reduced incorporation of the cleaning residues in the thin film being deposited.
摘要翻译：提供了用于在处理室中分配气体的气体分配板的实施例。在一个实施例中，气体分配板包括具有上游侧和下游侧的扩散板和通过扩散板的上游侧和下游侧之间的多个气体通道。气体通道中的至少一个具有从上游侧延伸的一部分长度的右圆柱形状，并且对于扩散板的剩余长度为同轴圆锥形，锥形部分的上游端具有与锥形部分的右圆柱形部分和下游端具有较大的直径。气体分配板相对容易制造，提供良好的室清洁率，良好的薄膜沉积均匀性和良好的薄膜沉积速率。气体分配板还具有减小扩散器表面上的室清洁残留物的优点，并且减少了沉积在薄膜中的清洁残余物的结合。

5. 发明申请

US20120103264A1 METHODS AND APPARATUS FOR DEPOSITING A UNIFORM SILICON FILM WITH FLOW GRADIENT DESIGNS 审中-公开
标题翻译：用流平面设计沉积均匀硅膜的方法和装置
公开(公告)号：US20120103264A1
公开(公告)日：2012-05-03
申请号：US13349332
申请日：2012-01-12
申请人： SOO YOUNG CHOI , Tae Kyung Won , John M. White
发明人： SOO YOUNG CHOI , Tae Kyung Won , John M. White
IPC分类号： C23C16/455
CPC分类号： C23C16/24 , C23C16/45565 , C23C16/5096 , H01J37/32449
摘要： Methods and apparatus having a flow gradient created from a gas distribution plate are provided. In one embodiment, the method and apparatus are particularly useful for, but not limited to, depositing a silicon film for solar cell applications. The apparatus for depositing a uniform film for solar cell applications includes a processing chamber, and a quadrilateral gas distribution plate disposed in the processing chamber and having at least four corners separated by four sides. The gas distribution plate further includes a first plurality of chokes formed through the gas distribution plate, the first plurality of chokes located in the corners, and a second plurality of chokes formed through the gas distribution plate, the second plurality of chokes located along the sides of the gas distribution plate between the corner regions, wherein the first plurality of chokes have a greater flow resistance than that of the second plurality of chokes.
摘要翻译：提供了具有由气体分配板产生的流动梯度的方法和装置。在一个实施例中，该方法和装置特别适用于但不限于沉积太阳能电池应用的硅膜。用于沉积用于太阳能电池应用的均匀膜的设备包括处理室和设置在处理室中的四边形气体分配板，并且具有由四个侧面分开的至少四个角。气体分配板还包括通过气体分配板形成的第一多个扼流圈，位于角部的第一多个扼流圈，以及通过气体分配板形成的第二多个扼流圈，沿着侧面设置的第二多个扼流圈在所述角区域之间的所述气体分配板中，所述第一多个扼流器具有比所述第二多个扼流圈更大的流动阻力。

6. 发明申请

US20090146264A1 THIN FILM TRANSISTOR ON SODA LIME GLASS WITH BARRIER LAYER 审中-公开
标题翻译： SODA LIME玻璃与薄膜层的薄膜晶体管
公开(公告)号：US20090146264A1
公开(公告)日：2009-06-11
申请号：US12277921
申请日：2008-11-25
申请人： YA-TANG YANG , BEOM SOO PARK , TAE K. WON , SOO YOUNG CHOI , JOHN M. WHITE
发明人： YA-TANG YANG , BEOM SOO PARK , TAE K. WON , SOO YOUNG CHOI , JOHN M. WHITE
IPC分类号： H01L29/06 , H01L21/336 , H01L21/31
CPC分类号： H01L21/3185 , H01L21/0214 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L27/1248 , H01L29/66765 , H01L29/78603
摘要： The present invention generally comprises a low cost TFT and a method of manufacturing a TFT. For TFTs, soda lime glass would be an attractive alternative to non-alkali glass, but a soda lime glass substrate will permit sodium to diffuse into the active layer and degrade the performance of the TFT. Substrates comprising a polyimide, because they are flexible, would also be attractive to utilize instead of non-alkali glass substrates, but the plastic substrates permit carbon to diffuse into the active layer. By depositing a silicon rich barrier layer over the soda lime glass substrate or substrate comprising a polyimide, both sodium and carbon diffusion may be reduced. Thus, a lower cost TFT may be produced with a soda lime glass substrate or a substrate comprising a polyimide as compared to a non-alkali glass substrate.
摘要翻译：本发明通常包括低成本TFT和制造TFT的方法。对于TFT，钠钙玻璃将成为非碱玻璃的有吸引力的替代品，但是钠钙玻璃基板将允许钠扩散到有源层并降低TFT的性能。由于它们是柔性的，包含聚酰亚胺的基底也将是有吸引力的而不是使用无碱玻璃基底，但塑料基底允许碳扩散到活性层中。通过在包含聚酰亚胺的钠钙玻璃基板或基底上沉积富硅势垒层，可以减少钠和碳的扩散。因此，与无碱玻璃基板相比，可以用钠钙玻璃基板或包含聚酰亚胺的基板制造成本较低的TFT。

7. 发明申请

US20130005081A1 METHOD OF IGZO AND ZNO TFT FABRICATION WITH PECVD SiO2 PASSIVATION 有权
标题翻译：具有PECVD SiO2钝化的IGZO和ZNO TFT制造方法
公开(公告)号：US20130005081A1
公开(公告)日：2013-01-03
申请号：US13490813
申请日：2012-06-07
申请人： JRJYAN JERRY CHEN , SOO YOUNG CHOI , DONG-KIL YIM , YAN YE
发明人： JRJYAN JERRY CHEN , SOO YOUNG CHOI , DONG-KIL YIM , YAN YE
IPC分类号： H01L21/336
CPC分类号： H01L29/66969 , H01L21/02565 , H01L29/78606 , H01L29/7869
摘要： The present invention generally relates to a method of manufacturing a TFT. The TFT has an active channel that comprises IGZO or zinc oxide. After the source and drain electrodes are formed, but before the passivation layers or etch stop layers are deposited thereover, the active channel is exposed to an N2O or O2 plasma. The interface between the active channel and the passivation layers or etch stop layers are either altered or damaged during formation of the source and drain electrodes. The N2O or O2 plasma alters and repairs the interface between the active channel and the passivation or etch stop layers.
摘要翻译：本发明一般涉及制造TFT的方法。 TFT具有包含IGZO或氧化锌的有源沟道。在形成源电极和漏电极之后，但是在钝化层或蚀刻停止层之前沉积，活性通道暴露于N 2 O或O 2等离子体。活性通道与钝化层或蚀刻停止层之间的界面在形成源极和漏极期间被改变或损坏。 N2O或O2等离子体改变和修复有源通道与钝化或蚀刻停止层之间的界面。

8. 发明申请

US20090105873A1 METHOD OF DYNAMIC TEMPERATURE CONTROL DURING MICROCRYSTALLINE SI GROWTH 失效
标题翻译：微晶玻璃生长过程中动态温度控制方法
公开(公告)号：US20090105873A1
公开(公告)日：2009-04-23
申请号：US11876130
申请日：2007-10-22
申请人： YONG KEE CHAE , SOO YOUNG CHOI
发明人： YONG KEE CHAE , SOO YOUNG CHOI
IPC分类号： G06F19/00 , C23C16/24 , H01L31/00
CPC分类号： H01L31/1824 , C23C16/24 , C23C16/46 , Y02E10/545 , Y02P70/521
摘要： The present invention generally comprises a method for dynamically controlling the temperature of a solar cell substrate during microcrystalline silicon deposition. In amorphous silicon/microcrystalline tandem solar cells, microcrystalline silicon may be deposited using a higher power density and to a greater thickness than amorphous silicon. The higher the power density applied, the faster the deposition may occur, but the temperature of the deposition may also increase. At high temperatures, the likelihood of dopant diffusing into the intrinsic layer of the solar cell and damaging the cell is greater. By dynamically controlling the temperature of the susceptor, the substrate and hence, the dopant can be maintained at a substantially constant temperature below the value at which the dopant may diffuse into the intrinsic layer. The dynamic temperature control permits the microcrystalline silicon to be deposited at a high power density without damaging the solar cell.
摘要翻译：本发明通常包括在微晶硅沉积期间动态地控制太阳能电池基板的温度的方法。在非晶硅/微晶串联太阳能电池中，可以使用比非晶硅更高的功率密度和更大的厚度来沉积微晶硅。施加的功率密度越高，沉积可能发生的越快，但沉积的温度也可能增加。在高温下，掺杂剂扩散到太阳能电池的本征层并损坏电池的可能性更大。通过动态地控制基座的温度，衬底和因此掺杂剂可以保持在低于掺杂剂可以扩散到本征层的值的基本上恒定的温度。动态温度控制允许以高功率密度沉积微晶硅而不损坏太阳能电池。

9. 发明申请

US20090104733A1 MICROCRYSTALLINE SILICON DEPOSITION FOR THIN FILM SOLAR APPLICATIONS 审中-公开
公开(公告)号：US20090104733A1
公开(公告)日：2009-04-23
申请号：US11876173
申请日：2007-10-22
申请人： YONG KEE CHAE , SOO YOUNG CHOI , SHURAN SHENG
发明人： YONG KEE CHAE , SOO YOUNG CHOI , SHURAN SHENG
IPC分类号： H01L31/18
CPC分类号： H01L31/075 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L31/03685 , H01L31/076 , H01L31/1824 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： Embodiments of the invention as recited in the claims relate to thin film multi-junction solar cells and methods and apparatuses for forming the same. In one embodiment a method of forming a thin film multi-junction solar cell over a substrate is provided. The method comprises positioning a substrate in a reaction zone, providing a gas mixture to the reaction zone, wherein the gas mixture comprises a silicon containing compound and hydrogen gas, forming a first region of an intrinsic type microcrystalline silicon layer on the substrate at a first deposition rate, forming a second region of the intrinsic type microcrystalline silicon layer on the substrate at a second deposition rate higher than the first deposition rate, and forming a third region of the intrinsic type microcrystalline silicon layer on the substrate at a third deposition rate lower than the second deposition rate.

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