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1. 发明授权

US12136641B2 Imaging device and signal processing device 有权
公开(公告)号：US12136641B2
公开(公告)日：2024-11-05
申请号：US17858688
申请日：2022-07-06
申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION
发明人： Jun Ogi , Yoshiaki Tashiro , Takahiro Toyoshima , Yorito Sakano , Yusuke Oike , Hongbo Zhu , Keiichi Nakazawa , Yukari Takeya , Atsushi Okuyama , Yasufumi Miyoshi , Ryosuke Matsumoto , Atsushi Horiuchi
IPC分类号： H01L27/146 , H04N25/70 , H01L31/107
CPC分类号： H01L27/1463 , H01L27/14623 , H01L27/1464 , H01L27/14645 , H01L27/14685 , H01L27/14689 , H04N25/70 , H01L31/107
摘要： To realize miniaturization of a pixel, reduction in noise, and high quantum efficiency, and to improve short-wavelength sensitivity while suppressing inter-pixel interference and variations for each pixel. According to the present disclosure, there is provided an imaging device including: a first semiconductor layer formed in a semiconductor substrate; a second semiconductor layer of a conductivity type opposite to a conductivity type of the first semiconductor layer formed on the first semiconductor layer; a pixel separation unit which defines a pixel region including the first semiconductor layer and the second semiconductor layer; a first electrode which is connected to the first semiconductor layer from one surface side of the semiconductor substrate; and a second electrode which is connected to the second semiconductor layer from a light irradiation surface side that is the other surface of the semiconductor substrate, and is formed to correspond to a position of the pixel separation unit.

2. 发明授权

US10692904B2 Solid-state image sensing device, drive method, and electronic apparatus 有权
公开(公告)号：US10692904B2
公开(公告)日：2020-06-23
申请号：US16281674
申请日：2019-02-21
申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION
发明人： Yoshiaki Tashiro
IPC分类号： H01L27/146 , H04N5/369 , H04N5/378 , H01L29/423
摘要： The present disclosure relates to a solid-state image sensing device, a drive method, and an electronic apparatus that suppress the color mixture of a phase difference detection signal to an image sensing signal. The solid-state image sensing device has a pixel area arranged with a plurality of pixels in which a first photoelectrical conversion section for photoelectrically converting a visible light of a first wavelength range and a second photoelectrical conversion section for photoelectrically converting a visible light of a second wavelength range are formed in different depths as viewed from a cross-sectional direction. Further, in each of the above-mentioned plurality of pixels, at least one of the first photoelectrical conversion section and the second photoelectrical conversion section is divided when viewed from a planar direction. The present technology is applicable to a solid-state image sensing device capable of detecting an image plane phase difference, for example.

3. 发明申请

US20230030282A1 BACKSIDE ILLUMINATED SINGLE PHOTON AVALANCHE DIODE 有权
公开(公告)号：US20230030282A1
公开(公告)日：2023-02-02
申请号：US17390366
申请日：2021-07-30
申请人： Sony Semiconductor Solutions Corporation
发明人： Adarsh Basavalingappa , Cristian Tivarus , Sungin Hwang , Yoshiaki Tashiro
IPC分类号： H01L31/107 , H01L27/146
摘要： A sensor chip including a resistor and a backside illuminated single photon avalanche diode (SPAD) that is connected to the resistor; and a sensor including a sensor chip with a resistor and a backside illuminated SPAD that is connected to the resistor. The backside illuminated SPAD including an anode, a cathode, and a multiplication structure.

4. 发明授权

US10985202B2 Solid-state imaging apparatus, electronic device, and driving method 有权
公开(公告)号：US10985202B2
公开(公告)日：2021-04-20
申请号：US16478375
申请日：2018-01-17
申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION
发明人： Yoshiaki Tashiro
IPC分类号： H01L27/146 , H04N5/359 , H04N5/361
摘要： Provided is a solid-state imaging apparatus, an electronic device, and a driving method for obtaining an output signal irrespective of temperature-induced changes in characteristics. The solid-state imaging apparatus includes a pixel array section including a first pixel that has a first photoelectric converting section and obtains an output signal with logarithmic characteristics, and a second pixel that obtains a temperature detection signal for detecting temperature, the first and the second pixels being arranged in a matrix pattern, and a correcting section that corrects the output signal on the basis of temperature information obtained from the temperature detection signal.

5. 发明授权

US10880506B2 Solid-state imaging device, electronic apparatus, and driving method 有权
公开(公告)号：US10880506B2
公开(公告)日：2020-12-29
申请号：US16495141
申请日：2018-03-15
申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION
发明人： Yoshiaki Tashiro
IPC分类号： H04N5/335 , H04N5/355 , H04N5/374 , H04N5/3745
CPC分类号： H04N5/35518 , H04N5/3741 , H04N5/37457
摘要： The present disclosure relates to a solid-state imaging device, an electronic apparatus, and a driving method for reducing power consumption of pixels, and achieving an increase in the number of pixels. Provided is a solid-state imaging device including a pixel array unit that includes pixels arranged in a matrix. From each of the pixels an output signal indicating a logarithmic characteristic is acquired. Each of the pixels includes: a photoelectric conversion unit; a reset transistor that resets the photoelectric conversion unit in accordance with a reset signal; a first amplification transistor that amplifies a signal received from the photoelectric conversion unit; a selection transistor that selects a signal received from the first amplification transistor in accordance with a selection signal; a second amplification transistor that amplifies a signal received from the selection transistor, and applies the amplified signal to a vertical signal line; and a bias transistor that functions as a current source. The first amplification transistor and the second amplification transistor are each connected to a power source voltage. For example, the technology according to the present disclosure is applicable to a logarithmic sensor in a solar cell mode.

6. 发明授权

US10868056B2 Solid-state imaging element and electronic apparatus 有权
公开(公告)号：US10868056B2
公开(公告)日：2020-12-15
申请号：US16466244
申请日：2017-11-30
申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION
发明人： Yoshiaki Tashiro , Satoko Iida , Yorito Sakano
IPC分类号： H01L27/146 , H04N5/355 , H04N5/374
CPC分类号： H01L27/14612 , H04N5/355 , H04N5/374
摘要： The present disclosure relates to a solid-state imaging element and an electronic apparatus which are capable of utilizing almost all photoelectrically converted charges for signals during high capacitance. A pixel includes a selection transistor that is disposed on a drain side of an amplification transistor and selects a read-out row, the selection transistor selects the read-out row after reset by a reset transistor, and a transfer transistor performs reference potential read-out during high capacitance prior to reference potential read-out during low capacitance. For example, the present disclosure is applicable to a lamination-type solid-state imaging element.

7. 发明申请

US20220155153A1 LIGHT-RECEIVING APPARATUS 有权
公开(公告)号：US20220155153A1
公开(公告)日：2022-05-19
申请号：US17428408
申请日：2020-03-06
申请人： Sony Semiconductor Solutions Corporation
发明人： Hongbo Zhu , Kazuki Hizu , Takafumi Takatsuka , Yusuke Oike , Jun Ogi , Yoshiaki Tashiro
IPC分类号： G01J11/00 , G01J1/44 , H03K23/58
摘要： A light-receiving apparatus (1a) includes a counting unit (11), a setting unit (12), and an acquiring unit (13). The counting unit is configured to measure a detection number of times that represents the number of times incidence of a photon to a light-receiving element has been detected within an exposure period and to output a counted value. The setting unit is configured to set a cycle of updating time information in accordance with an elapsed time during the exposure period. The acquiring unit is configured to acquire the time information indicating a time at which the counted value reaches a threshold before the exposure period elapses.

8. 发明授权

US10777597B2 Imaging device 有权
公开(公告)号：US10777597B2
公开(公告)日：2020-09-15
申请号：US16301877
申请日：2018-03-20
申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION
发明人： Jun Ogi , Yoshiaki Tashiro , Takahiro Toyoshima , Yorito Sakano , Yusuke Oike , Hongbo Zhu , Keiichi Nakazawa , Yukari Takeya , Atsushi Okuyama , Yasufumi Miyoshi , Ryosuke Matsumoto , Atsushi Horiuchi
IPC分类号： H01L27/146 , H04N5/369 , H01L31/107
摘要： To realize miniaturization of a pixel, reduction in noise, and high quantum efficiency, and to improve short-wavelength sensitivity while suppressing inter-pixel interference and variations for each pixel. According to the present disclosure, there is provided an imaging device including: a first semiconductor layer formed in a semiconductor substrate; a second semiconductor layer of a conductivity type opposite to a conductivity type of the first semiconductor layer formed on the first semiconductor layer; a pixel separation unit which defines a pixel region including the first semiconductor layer and the second semiconductor layer; a first electrode which is connected to the first semiconductor layer from one surface side of the semiconductor substrate; and a second electrode which is connected to the second semiconductor layer from a light irradiation surface side that is the other surface of the semiconductor substrate, and is formed to correspond to a position of the pixel separation unit.

9. 发明授权

US10249657B2 Solid-state image sensing device, drive method, and electronic apparatus 有权
公开(公告)号：US10249657B2
公开(公告)日：2019-04-02
申请号：US15554543
申请日：2016-02-26
申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION
发明人： Yoshiaki Tashiro
IPC分类号： H01L27/146 , H04N5/378 , H04N5/369 , H01L29/423
摘要： The present disclosure relates to a solid-state image sensing device, a drive method, and an electronic apparatus that are configured to suppress the color mixture of a phase difference detection signal to an image sensing signal. The solid-state image sensing device has a pixel area configured to be arranged with a plurality of pixels in which a first photoelectrical conversion section for photoelectrically converting a visible light of a first wavelength range and a second photoelectrical conversion section for photoelectrically converting a visible light of a second wavelength range are formed in different depths as viewed from a cross-sectional direction, and a drive section configured to execute a drive operation of reading each pixel signal having a level corresponding to charges generated in each of the first photoelectrical conversion section and the second photoelectrical conversion section from each of the above-mentioned plurality of pixels. Further, in each of the above-mentioned plurality of pixels, at least one of the first photoelectrical conversion section and the second photoelectrical conversion section is configured as divided when viewed from a planar direction. The present technology is applicable to a solid-state image sensing device capable of detecting an image plane phase difference, for example.

10. 发明公开

US20230358608A1 LIGHT-RECEIVING APPARATUS 审中-公开
公开(公告)号：US20230358608A1
公开(公告)日：2023-11-09
申请号：US18332215
申请日：2023-06-09
申请人： Sony Semiconductor Solutions Corporation
发明人： Hongbo Zhu , Kazuki Hizu , Takafumi Takatsuka , Yusuke Oike , Jun Ogi , Yoshiaki Tashiro
IPC分类号： G01J1/44 , G01J11/00 , H03K23/58 , H01L31/02
CPC分类号： G01J1/44 , G01J11/00 , H03K23/58 , H01L31/02027 , G01J2001/448 , G02B5/20
摘要： A light-receiving apparatus (1a) includes a counting unit (11), a setting unit (12), and an acquiring unit (13). The counting unit is configured to measure a detection number of times that represents the number of times incidence of a photon to a light-receiving element has been detected within an exposure period and to output a counted value. The setting unit is configured to set a cycle of updating time information in accordance with an elapsed time during the exposure period. The acquiring unit is configured to acquire the time information indicating a time at which the counted value reaches a threshold before the exposure period elapses.

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