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1. 发明授权

US11296048B2 Semiconductor chip mounting device and method for manufacturing semiconductor device 有权
公开(公告)号：US11296048B2
公开(公告)日：2022-04-05
申请号：US16338700
申请日：2017-09-29
申请人： SHINKAWA LTD.
发明人： Tomonori Nakamura , Toru Maeda
IPC分类号： H01L23/00 , H01L25/065 , H01L25/00
摘要： Provided is a mounting device in which two or more semiconductor chips are laminated and mounted at a plurality of locations on a substrate, said mounting device including: a stage that supports the substrate; a bonding part that laminates and mounts the plurality of semiconductor chips on the substrate while heating the plurality of semiconductor chips and the substrate; and a heat insulating member that is interposed between the stage and the substrate, said heat insulating member including a first layer which is in contact with the substrate and to which heat is applied from the bonding part via the semiconductor chips and the substrate, and a second layer which is disposed closer to the stage side than the first layer, wherein the first layer has a larger heat resistance than the second layer.

2. 发明授权

US09044821B2 Antioxidant gas supply unit 有权
标题翻译：抗氧化剂供气装置
公开(公告)号：US09044821B2
公开(公告)日：2015-06-02
申请号：US14321134
申请日：2014-07-01
申请人： Shinkawa Ltd.
发明人： Toru Maeda , Mitsuaki Sakakura
IPC分类号： B23K37/00 , B23K20/00 , B23K9/16 , H01L23/00
CPC分类号： B23K20/007 , B23K9/16 , B23K20/005 , B23K37/00 , H01L24/45 , H01L24/78 , H01L2224/45144 , H01L2224/45147 , H01L2224/781 , H01L2224/78268 , H01L2224/78301 , H01L2224/85045 , H01L2224/85054 , H01L2924/00014 , H01L2924/00015 , Y10T137/6416 , H01L2224/48
摘要： Provided is an antioxidant gas supply unit including: a base body (10) in a shape of a hollow plate having antioxidant gas flow paths (53) and (54) defined therein; an antioxidation gas inlet (20) for letting an antioxidant gas flow into the antioxidant gas flow paths (53) and (54); a through hole (30) penetrating through the base body (10) in a through-thickness direction so that a capillary (72) is allowed to be inserted into and removed from the hole, and communicating with the antioxidant gas flow paths (53) and (54) to let the antioxidant gas flow out; and a film heater (40) attached to an outer surface of the base body (10) around the through hole (30). The antioxidant gas supply unit has a compact structure and is capable of effectively heating a free air ball.
摘要翻译：提供一种抗氧化剂气体供给单元，包括：具有限定在其中的抗氧化剂气体流路（53）和（54）的中空板形状的基体（10）用于使抗氧化剂气体流入抗氧化剂气体流路（53）和（54）的抗氧化气体入口（20）; 穿过所述基体（10）的贯穿孔（30）的通孔（30），使得允许毛细管（72）从所述孔插入和移出，并与所述抗氧化剂气体流路（53）连通，和（54）使抗氧化剂气体流出; 以及围绕所述通孔（30）附接到所述基体（10）的外表面的膜加热器（40）。抗氧化剂气体供给装置结构紧凑，能够有效地加热空气球。

3. 发明授权

US11545462B2 Mounting apparatus and mounting system 有权
公开(公告)号：US11545462B2
公开(公告)日：2023-01-03
申请号：US16486155
申请日：2018-01-30
申请人： SHINKAWA LTD.
发明人： Tomonori Nakamura , Toru Maeda
IPC分类号： H01L23/00
摘要： A mounting apparatus for stacking and mounting two or more semiconductor chips at a plurality of locations on a substrate includes: a first mounting head for forming, at a plurality of locations on the substrate, temporarily stacked bodies in which two or more semiconductor chips are stacked in a temporarily press-attached state; and a second mounting head for forming chip stacked bodies by sequentially finally press-attaching the temporarily stacked bodies formed at the plurality of locations. The second mounting head includes: a press-attaching tool for heating and pressing an upper surface of a target temporarily stacked body to thereby finally press-attach the two or more semiconductor chips configuring the temporarily stacked body altogether; and one or more heat-dissipation tools having a heat-dissipating body which, by coming into contact with an upper surface of another stacked body positioned around the target temporarily stacked body, dissipates heat from the another stacked body.

4. 发明授权

US11508689B2 Mounting apparatus and mounting system 有权
公开(公告)号：US11508689B2
公开(公告)日：2022-11-22
申请号：US16486155
申请日：2018-01-30
申请人： SHINKAWA LTD.
发明人： Tomonori Nakamura , Toru Maeda
IPC分类号： H01L23/00
摘要： A mounting apparatus for stacking and mounting two or more semiconductor chips at a plurality of locations on a substrate includes: a first mounting head for forming, at a plurality of locations on the substrate, temporarily stacked bodies in which two or more semiconductor chips are stacked in a temporarily press-attached state; and a second mounting head for forming chip stacked bodies by sequentially finally press-attaching the temporarily stacked bodies formed at the plurality of locations. The second mounting head includes: a press-attaching tool for heating and pressing an upper surface of a target temporarily stacked body to thereby finally press-attach the two or more semiconductor chips configuring the temporarily stacked body altogether; and one or more heat-dissipation tools having a heat-dissipating body which, by coming into contact with an upper surface of another stacked body positioned around the target temporarily stacked body, dissipates heat from the another stacked body.

5. 发明授权

US11094567B2 Mounting apparatus and method for manufacturing semiconductor device 有权
公开(公告)号：US11094567B2
公开(公告)日：2021-08-17
申请号：US16624302
申请日：2018-05-29
申请人： SHINKAWA LTD.
发明人： Tomonori Nakamura , Toru Maeda , Tetsuo Takano
IPC分类号： H01L21/67 , H01L21/50 , H01L23/00 , H01L21/60
摘要： A mounting apparatus for manufacturing a semiconductor device by bonding a semiconductor chip (12) to a mounted object that is a substrate (30) or another semiconductor chip (12) is provided. The mounting apparatus includes: a stage (120) on which the substrate (30) is placed, a mounting head (124) that is capable of moving relative to the stage (120) and bonds the semiconductor chip (12) to the mounted object, and an irradiation unit (108 that irradiates, from a lower side of the stage (120), an electromagnetic wave transmitting through the stage and heating the substrate (30). The stage (120) has a first layer (122) formed on an upper surface side, and the first layer (122) has a greater thermal resistance in a plane direction than the thermal resistance in a thickness direction.

6. 发明授权

US10896901B2 Method of manufacturing semiconductor device, and mounting device 有权
公开(公告)号：US10896901B2
公开(公告)日：2021-01-19
申请号：US16337926
申请日：2017-09-28
申请人： SHINKAWA LTD.
发明人： Tomonori Nakamura , Toru Maeda
IPC分类号： H01L25/07 , H01L21/44 , H01L21/50 , H01L21/56 , H01L25/065 , H01L23/31 , H01L25/00 , H01L23/00 , H01L25/18
摘要： The disclosure is provided with: a temporary crimping step in which one or more semiconductor chips 10 are sequentially laminated while being temporarily crimped in each of two or more locations on a substrate 30 to thereby form chip stacks ST in a temporarily crimped state; and a permanent crimping step in which the top surfaces of all of the chip stacks ST formed in the temporarily crimped state are sequentially heated, pressurized, and permanently crimped. Furthermore, a specifying step is provided prior to the temporary crimping step for specifying a separation distance Dd which is the distance from the chip stacks ST under permanent crimping to a location at which the temperature of the substrate 30, the temperature having been raised by heating for the permanent crimping, becomes less than or equal to a prescribed permissible temperature Td, and in the temporary crimping step, the chip stacks ST in the temporarily crimped state are formed separated from each other by the separation distance Dd or more.

7. 发明授权

US09362251B2 Antioxidant gas blow-off unit 有权
标题翻译：抗氧化气体排放装置
公开(公告)号：US09362251B2
公开(公告)日：2016-06-07
申请号：US14678094
申请日：2015-04-03
申请人： Shinkawa Ltd.
发明人： Mitsuaki Sakakura , Toru Maeda
IPC分类号： B23K37/00 , H01L23/00 , B23K20/00 , B23K3/08
CPC分类号： H01L24/742 , B23K3/082 , B23K20/007 , H01L24/45 , H01L24/78 , H01L24/85 , H01L2224/45144 , H01L2224/45147 , H01L2224/781 , H01L2224/78253 , H01L2224/78268 , H01L2224/78269 , H01L2224/78301 , H01L2224/85045 , H01L2224/85054 , H01L2224/852 , H01L2224/85205 , H01L2924/01029 , H01L2924/181 , H01L2924/365 , H01L2924/00014 , H01L2924/00015 , H01L2924/00
摘要： An antioxidant gas blow-off unit includes: a base portion configured as a hollow plate having an antioxidant gas flow passage formed therein; a hole that is provided in the base portion to allow a capillary to be inserted therein or removed therefrom and that communicates with the antioxidant gas flow passage; and a heater mounted on an outer surface of the base portion. The antioxidant gas flow passage includes a first flow passage provided in the vicinity of the outer surface of the base portion on which the heater is mounted. This antioxidant gas blow-off unit to be installed in a wire bonding apparatus heats free air balls effectively with a compact structure.
摘要翻译：抗氧化剂气体吹出单元包括：基部，其构成为具有形成在其中的抗氧化剂气体流路的中空板; 设置在所述基部中的孔，以允许毛细管插入其中或从其中移除，并与所述抗氧化剂气体流动通道连通; 以及安装在基部的外表面上的加热器。抗氧化剂气体流动通道包括设置在其上安装有加热器的基部的外表面附近的第一流动通道。安装在引线接合装置中的该抗氧化气体吹出单元以紧凑的结构有效地加热空气球。

8. 发明授权

US12080679B2 Bonding apparatus and alignment method 有权
公开(公告)号：US12080679B2
公开(公告)日：2024-09-03
申请号：US18010458
申请日：2021-08-26
申请人： SHINKAWA LTD.
发明人： Toru Maeda , Osamu Kakutani
IPC分类号： B23K20/00 , B23K20/10 , H01L23/00 , B23K101/40
CPC分类号： H01L24/78 , B23K20/004 , B23K20/005 , B23K20/106 , B23K2101/40 , H01L2224/78621 , H01L2224/78701 , H01L2224/78753
摘要： A bonding apparatus includes: a clamper able to clamp a wire between a pair of arms; a horn, in which a first through hole able to hold a capillary, and a second through hole adjacent to the first through hole and penetrating the horn in an up-down direction are further formed; and a bonding stage able to carry a workpiece. An alignment method for aligning a horn and a damper of a bonding apparatus with each other includes: disposing a mirror surface to be parallel to a bonding stage; aligning a mirror image of a second through hole reflected on the mirror surface with a center of the second through hole when the mirror surface is viewed through the second through hole; and aligning the damper based on a position of the mirror image and the horn.

9. 发明申请

US20160351536A1 BONDING APPARATUS AND BONDING TOOL CLEANING METHOD 审中-公开
标题翻译：连接装置和粘接工具清洗方法
公开(公告)号：US20160351536A1
公开(公告)日：2016-12-01
申请号：US15233394
申请日：2016-08-10
申请人： Shinkawa Ltd.
发明人： Toru Maeda , Tetsuya Utano
IPC分类号： H01L23/00 , B08B7/00 , B08B7/02 , B23K20/00
CPC分类号： H01L24/85 , B08B7/0035 , B08B7/028 , B23K3/08 , B23K20/004 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/78 , H01L2224/05554 , H01L2224/451 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/49175 , H01L2224/7801 , H01L2224/78301 , H01L2224/78343 , H01L2224/7855 , H01L2224/78611 , H01L2224/85132 , H01L2224/85181 , H01L2224/85205 , H01L2224/85345 , H01L2924/00014 , H01L2924/01029 , H01L2924/19107 , H01L2924/3011 , H01L2924/30111 , H01L2924/00 , H01L2924/00012 , H01L2924/00015 , H01L2224/05599 , H01L2924/00011
摘要： In wire bonding in which a bonding tool is cleaned through plasma irradiation, the plasma application to a wire and therefore the formation of an unexpectedly large-sized ball in the following bonding operation is prevented. The cleaning of the bonding tool through plasma irradiation is followed by dummy bonding, the bonding tool is cleaned with a ball formed thereon, or a prohibition period is provided during which ball forming is prohibited until the energy of plasma attenuates after the bonding tool is cleaned to prevent the plasma irradiation from having an impact on the bonding operation so that the ball cannot have an increased diameter.
摘要翻译：在通过等离子体照射清洁接合工具的引线接合中，防止了等离子体施加到导线上，从而在随后的接合操作中形成意想不到的大尺寸球。通过等离子体照射对接合工具进行清洁之后，进行虚拟接合，接合工具用形成在其上的球进行清洁，或者禁止球形成禁止期间，直到等离子体能量在粘合工具被清洁之后衰减以防止等离子体照射对接合操作产生冲击，使得球不能具有增加的直径。

10. 发明申请

US20140034712A1 BONDING APPARATUS AND BONDING TOOL CLEANING METHOD 审中-公开
标题翻译：连接装置和粘接工具清洗方法
公开(公告)号：US20140034712A1
公开(公告)日：2014-02-06
申请号：US14045879
申请日：2013-10-04
申请人： Shinkawa Ltd.
发明人： Toru Maeda , Tetsuya Utano
IPC分类号： B23K3/08
CPC分类号： H01L24/85 , B08B7/0035 , B08B7/028 , B23K3/08 , B23K20/004 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/78 , H01L2224/05554 , H01L2224/451 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/49175 , H01L2224/7801 , H01L2224/78301 , H01L2224/78343 , H01L2224/7855 , H01L2224/78611 , H01L2224/85132 , H01L2224/85181 , H01L2224/85205 , H01L2224/85345 , H01L2924/00014 , H01L2924/01029 , H01L2924/19107 , H01L2924/3011 , H01L2924/30111 , H01L2924/00 , H01L2924/00012 , H01L2924/00015 , H01L2224/05599 , H01L2924/00011
摘要： In wire bonding in which a bonding tool is cleaned through plasma irradiation, the plasma application to a wire and therefore the formation of an unexpectedly large-sized ball in the following bonding operation is prevented. The cleaning of the bonding tool through plasma irradiation is followed by dummy bonding, the bonding tool is cleaned with a ball formed thereon, or a prohibition period is provided during which ball forming is prohibited until the energy of plasma attenuates after the bonding tool is cleaned to prevent the plasma irradiation from having an impact on the bonding operation so that the ball cannot have an increased diameter.
摘要翻译：在通过等离子体照射清洁接合工具的引线接合中，防止了等离子体施加到导线上，从而在随后的接合操作中形成意想不到的大尺寸球。通过等离子体照射对接合工具进行清洁之后，进行虚拟接合，接合工具用形成在其上的球进行清洁，或者禁止球形成禁止期间，直到等离子体能量在粘合工具被清洁之后衰减以防止等离子体照射对接合操作产生冲击，使得球不能具有增加的直径。

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