专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20190105750A1 METHOD FOR MANUFACTURING WIRE SAW APPARATUS AND WIRE SAW APPARATUS 审中-公开
公开(公告)号：US20190105750A1
公开(公告)日：2019-04-11
申请号：US16086554
申请日：2017-02-24
申请人： SHIN-ETSU HANDOTAI CO., LTD.
发明人： Yoshihiro USAMI
IPC分类号： B24B27/06 , B28D5/04 , B24B5/36 , B24B5/37
摘要： A method for manufacturing a wire saw apparatus including a wire supply reel; a long roller; wire guides; a wire winding reel; and a tension arm controlled to move within a control angle of ±A (°) set in advance and configured to apply tension to the wire, the method including the steps of: measuring a surface roughness Rmax of the long roller; measuring an angle a (°) of the tension arm at which the tension arm swings outside a range of the control angle set in advance while the wire is extending from the wire supply reel; calculating R1×2×A÷(|a|+A)=R2, where R1 (μm) represents the measured surface roughness Rmax of the long roller; and adjusting the surface roughness Rmax of the long roller to the calculated numerical value R2 or less. The method for manufacturing a wire saw apparatus can prevent the tension arm from greatly swinging outside the control range.

2. 发明申请

US20180226258A1 METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER 审中-公开
公开(公告)号：US20180226258A1
公开(公告)日：2018-08-09
申请号：US15748834
申请日：2016-07-15
申请人： SHIN-ETSU HANDOTAI CO., LTD.
发明人： Yoshihiro USAMI , Shiro AMAGAI
IPC分类号： H01L21/304 , H01L21/67
CPC分类号： H01L21/304 , H01L21/02021 , H01L21/02024 , H01L21/3212 , H01L21/67282 , H01L21/67288
摘要： A method for manufacturing a semiconductor wafer including: slicing off a plurality of wafers from an ingot; chamfering outer peripheral portions of the plurality of sliced wafers; and performing double-side polishing to polish both surfaces of each wafer whose outer peripheral portion is held by a carrier, wherein includes performing warp direction adjustment to uniform directions of warps of the plurality of wafers in one direction after the slicing and before the chamfering, and the chamfering and the double-side polishing are performed in a state where the directions of the warps of the plurality of wafers are uniformed in one direction after the warp direction adjustment. Consequently, it is possible to provide the method for manufacturing a semiconductor wafer which can suppress degradation of flatness of the double-side polished wafers even in case of uniforming the directions of the warps of the wafers in one direction before the double-side polishing.

3. 发明申请

US20180290265A1 GRINDING WHEEL 审中-公开
公开(公告)号：US20180290265A1
公开(公告)日：2018-10-11
申请号：US15570643
申请日：2016-03-11
申请人： SHIN-ETSU HANDOTAI CO., LTD.
发明人： Yoshihiro USAMI
IPC分类号： B24D7/06
CPC分类号： B24D7/066 , B24B7/228 , B24D7/06 , H01L21/02013
摘要： A grinding wheel which includes a plurality of vitrified bonded grindstone chips arranged on an outer periphery of an annular base metal thereof, and is configured to grind a workpiece with use of the grindstone chips while rotating the annular base metal, wherein each of the vitrified bonded grindstone chips is configured in such a manner that, in a rectangular parallelepiped including a rectangular grinding surface which is placed on an opposite side of the annular base metal and grinds the workpiece and four side surfaces adjacent to grinding surface, four ridge portions each of which is provided between the side surfaces are C-chamfered, each long side of the grinding surface is arranged along the outer periphery of the annular base metal, and each of the four ridge portions is C-chamfered in a range which is ⅕ or more of a length of each short side of the grinding surface.

4. 发明申请

US20170136596A1 WORKPIECE DOUBLE-DISC GRINDING METHOD 有权
公开(公告)号：US20170136596A1
公开(公告)日：2017-05-18
申请号：US15116130
申请日：2015-01-23
申请人： SHIN-ETSU HANDOTAI CO., LTD.
发明人： Yoshihiro USAMI
IPC分类号： B24B7/17 , H01L21/02
CPC分类号： B24B7/17 , H01L21/02013 , H01L21/02024
摘要： The present invention is a workpiece double-disc grinding method including supporting a sheet workpiece along a circumferential direction from an outer circumference side of the workpiece by a ring holder, and simultaneously grinding both surfaces of the workpiece supported by the ring holder with a pair of grinding wheels while rotating the ring holder, wherein the surfaces of the workpiece are simultaneously ground such that a wear amount of the grinding wheels per 1 μm of a grinding stock removal of the workpiece ranges from 0.10 μm to 0.33 μm. This workpiece double-disc grinding method can reduce nanotopography formed in previous steps such as a slicing step without degrading the flatness in the double-disc grinding step.

5. 发明申请

US20160217998A1 METHOD FOR PRODUCING MIRROR-POLISHED WAFER 有权
标题翻译：用于生产反射抛光波的方法
公开(公告)号：US20160217998A1
公开(公告)日：2016-07-28
申请号：US14914209
申请日：2014-08-20
申请人： SHIN-ETSU HANDOTAI CO., LTD.
发明人： Hiromasa HASHIMOTO , Yoshihiro USAMI , Kazuaki AOKI , Shigeru OBA
IPC分类号： H01L21/02 , H01L21/66
CPC分类号： H01L21/02024 , B24B37/08 , H01L21/02008 , H01L21/02013 , H01L21/02019 , H01L21/304 , H01L21/68764 , H01L21/68771 , H01L22/12 , H01L22/26
摘要： A method for producing mirror-polished wafer, the method produces a plurality of mirror-polished wafers by performing, on plurality of silicon wafers obtained by slicing a silicon ingot, slicing strain removing step of removing strain on a surface caused by slicing, etching step of removing strain caused by the slicing strain removing step, and double-side polishing step of performing mirror polishing on both surfaces of the silicon wafers subjected to etching, each step being performed by batch processing, wherein silicon wafers which are processed in double-side polishing step by batch processing are selected from silicon wafers processed in same batch in the slicing strain removing step and the number of silicon wafers to be selected is made to be equal to the number of silicon wafers processed in the slicing strain removing step or submultiple thereof. As a result, a method that can produce mirror-polished wafers having high flatness is provided.
摘要翻译：一种用于制造镜面抛光晶片的方法，该方法通过在通过切割硅锭获得的多个硅晶片上进行多个镜面抛光晶片，其中切片应变去除步骤除去由切片引起的表面上的应变，蚀刻步骤去除由切片应变去除步骤引起的应变的双面抛光步骤，以及在经过蚀刻的硅晶片的两个表面上进行镜面抛光的双面抛光步骤，每个步骤通过间歇处理进行，其中在双面处理的硅晶片选择在切片应变去除步骤中以相同批次处理的硅晶片进行分批处理，并且选择的硅晶片的数量等于在切片应变去除步骤中处理的硅晶片的数量或其分支。结果，提供了可以生产具有高平坦度的镜面抛光晶片的方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式