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1. 发明申请

US20110198603A1 THIN FILM TRANSISTOR AND METHOD OF FORMING THE SAME 有权
标题翻译：薄膜晶体管及其形成方法
公开(公告)号：US20110198603A1
公开(公告)日：2011-08-18
申请号：US12902786
申请日：2010-10-12
申请人： SEUNG-HA CHOI , Kyoung-Jae Chung , Young-Wook Lee
发明人： SEUNG-HA CHOI , Kyoung-Jae Chung , Young-Wook Lee
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/7869 , H01L27/1214 , H01L27/1225 , H01L29/42384 , H01L29/66742 , H01L29/66969
摘要： Disclosed are a thin film transistor and a method of forming the thin film transistor.The thin film transistor includes a gate electrode, an oxide semiconductor pattern, a first gate insulating layer pattern interposed between the gate electrode and the oxide semiconductor pattern, wherein the first gate insulating layer pattern has an island shape or has two portions of different thicknesses from each other, a source electrode and a drain electrode electrically connected to the oxide semiconductor pattern, wherein the source electrode and the drain electrode are separated from each other, and a first insulating layer pattern placed between the source electrode and drain electrode and the oxide semiconductor pattern, wherein the first insulating layer pattern partially contacts the source electrode and drain electrode and the first gate insulating layer pattern, and wherein the first insulating layer is enclosed by an outer portion.
摘要翻译：公开了薄膜晶体管和形成薄膜晶体管的方法。薄膜晶体管包括栅电极，氧化物半导体图案，插入在栅极电极和氧化物半导体图案之间的第一栅极绝缘层图案，其中第一栅极绝缘层图案具有岛状或具有两个不同厚度的部分电连接到所述氧化物半导体图案的源电极和漏电极，其中所述源电极和所述漏电极彼此分离;以及第一绝缘层图案，位于所述源电极和漏极之间以及所述氧化物半导体图案，其中所述第一绝缘层图案部分地接触所述源电极和漏电极以及所述第一栅绝缘层图案，并且其中所述第一绝缘层被外部包围。

2. 发明申请

US20100148769A1 NON-CONTACT PLASMA-MONITORING APPARATUS AND METHOD AND PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：非接触式等离子体监测装置和方法和等离子体处理装置
公开(公告)号：US20100148769A1
公开(公告)日：2010-06-17
申请号：US12571364
申请日：2009-09-30
申请人： SHIN-II CHOI , HONG-KEE CHIN , SANG-GAB KIM , KI-YEUP LEE , DONG-JU YANG , YU-GWANG JEONG , SEUNG-HA CHOI , YUN-JONG YEO , JI-YOUNG PARK , HYUNG-JUN KIM , SANG-SUN LEE
发明人： SHIN-II CHOI , HONG-KEE CHIN , SANG-GAB KIM , KI-YEUP LEE , DONG-JU YANG , YU-GWANG JEONG , SEUNG-HA CHOI , YUN-JONG YEO , JI-YOUNG PARK , HYUNG-JUN KIM , SANG-SUN LEE
IPC分类号： G01R33/12
CPC分类号： G01R33/12
摘要： A non-contact plasma-monitoring apparatus and a non-contact plasma-monitoring method are provided. The non-contact plasma-monitoring apparatus is installed in a plasma processing apparatus including a processing chamber and a power supply unit and measures at least one of an electric field and a magnetic field, which are created around power supply wiring connecting the process chamber to the power supply unit, without physically contacting the power supply wiring.
摘要翻译：提供非接触式等离子体监测装置和非接触等离子体监测方法。非接触等离子体监测装置安装在包括处理室和电源单元的等离子体处理装置中，并且测量电场和磁场中的至少一个，其围绕连接处理室的电源布线电源单元，没有物理接触电源线。

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