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1. 发明授权

US09437813B2 Method for forming resistance-switching memory cell with multiple electrodes using nano-particle hard mask 有权
标题翻译：使用纳米粒子硬掩模形成具有多个电极的电阻切换存储单元的方法
公开(公告)号：US09437813B2
公开(公告)日：2016-09-06
申请号：US13767649
申请日：2013-02-14
申请人： SanDisk 3D LLC
发明人： George Matamis , James K Kai , Vinod R Purayath , Yuan Zhang , Henry Chien
IPC分类号： H01L47/00 , H01L45/00 , H01L27/24
CPC分类号： H01L45/04 , H01L27/2463 , H01L27/2481 , H01L45/06 , H01L45/1233 , H01L45/1273 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/149 , H01L45/16 , H01L45/1675
摘要： In a fabrication process for reversible resistance-switching memory cells, a bottom electrode layer is coated with nano-particles. The nano-particles are used to etch the bottom electrode layer, forming multiple narrow, spaced apart bottom electrode structures for each memory cell. A resistance-switching material is then deposited between and above the bottom electrode structures, followed by a top electrode layer. Or, insulation is deposited between and above the bottom electrode structures, followed by planarizing and a wet etch to expose top surfaces of the bottom electrode structures, then deposition of the resistance-switching material and the top electrode layer. When the resistance state of the memory cell is switched, there is a smaller area in the bottom electrode for a current path, so the switching resistance is higher and the switching current is lower.
摘要翻译：在可逆电阻切换存储单元的制造工艺中，底部电极层涂覆有纳米颗粒。纳米颗粒用于蚀刻底部电极层，为每个存储单元形成多个窄的，间隔开的底部电极结构。然后在底部电极结构之间和之上沉积电阻切换材料，随后沉积上电极层。或者，在底部电极结构之间和之上沉积绝缘体，随后进行平面化和湿蚀刻以暴露底部电极结构的顶表面，然后沉积电阻切换材料和顶部电极层。当切换存储单元的电阻状态时，电流路径的底部电极的面积越小，开关电阻越高，开关电流越低。

2. 发明授权

US08877586B2 Process for forming resistive switching memory cells using nano-particles 有权
标题翻译：使用纳米颗粒形成电阻式开关存储单元的工艺
公开(公告)号：US08877586B2
公开(公告)日：2014-11-04
申请号：US13755577
申请日：2013-01-31
申请人： SanDisk 3D LLC
发明人： James K Kai , Takashi W Orimoto , Vinod R Purayath , George Matamis
IPC分类号： H01L21/336 , H01L45/00
CPC分类号： H01L45/16 , H01L27/2409 , H01L27/2463 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/145 , H01L45/149 , H01L45/1608 , H01L45/1683
摘要： A process for forming reversible resistance-switching memory cells having resistance-switching nano-particles which provide a reduced contact area to top and bottom electrodes of the memory cells, thereby limiting a peak current. Recesses are formed in a layered semiconductor material above the bottom electrodes, and one or more coatings of nano-particles are applied. The nano-particles self-assemble in the recesses so that they are positioned in a controlled manner. A top electrode material is then deposited. In one approach, the recesses are formed by spaced-apart trenches, and the nano-particles self-assemble along the spaced-apart trenches. In another approach, the recesses for each resistance-switching memory cell are separate from one another, and the resistance-switching memory cells are pillar-shaped. The coatings can be provided in one layer, or in multiple layers which are separated by an insulation layer.
摘要翻译：一种用于形成具有电阻切换纳米颗粒的可逆电阻切换存储单元的方法，其提供对存储单元的顶部和底部电极的接触面积减小，从而限制峰值电流。在底部电极上方的层状半导体材料中形成凹部，并且施加一个或多个纳米颗粒涂层。纳米颗粒在凹陷中自组装，使得它们以受控的方式定位。然后沉积顶部电极材料。在一种方法中，凹槽由间隔开的沟槽形成，并且纳米颗粒沿着间隔开的沟槽自组装。另一方面，每个电阻切换存储单元的凹槽彼此分开，电阻切换存储单元是柱形的。涂层可以设置在由绝缘层分隔开的一层或多层中。

3. 发明申请

US20140213032A1 Process For Forming Resistive Switching Memory Cells Using Nano-Particles 有权
标题翻译：使用纳米颗粒形成电阻式开关记忆单元的方法
公开(公告)号：US20140213032A1
公开(公告)日：2014-07-31
申请号：US13755577
申请日：2013-01-31
申请人： SANDISK 3D LLC
发明人： James K. Kai , Takashi W. Orimoto , Vinod R. Purayath , George Matamis
IPC分类号： H01L45/00
CPC分类号： H01L45/16 , H01L27/2409 , H01L27/2463 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/145 , H01L45/149 , H01L45/1608 , H01L45/1683
摘要： A process for forming reversible resistance-switching memory cells having resistance-switching nano-particles which provide a reduced contact area to top and bottom electrodes of the memory cells, thereby limiting a peak current. Recesses are formed in a layered semiconductor material above the bottom electrodes, and one or more coatings of nano-particles are applied. The nano-particles self-assemble in the recesses so that they are positioned in a controlled manner. A top electrode material is then deposited. In one approach, the recesses are formed by spaced-apart trenches, and the nano-particles self-assemble along the spaced-apart trenches. In another approach, the recesses for each resistance-switching memory cell are separate from one another, and the resistance-switching memory cells are pillar-shaped. The coatings can be provided in one layer, or in multiple layers which are separated by an insulation layer.
摘要翻译：一种用于形成具有电阻切换纳米颗粒的可逆电阻切换存储单元的方法，其提供对存储单元的顶部和底部电极的接触面积减小，从而限制峰值电流。在底部电极上方的层状半导体材料中形成凹部，并且施加一个或多个纳米颗粒涂层。纳米颗粒在凹陷中自组装，使得它们以受控的方式定位。然后沉积顶部电极材料。在一种方法中，凹槽由间隔开的沟槽形成，并且纳米颗粒沿着间隔开的沟槽自组装。另一方面，每个电阻切换存储单元的凹槽彼此分开，电阻切换存储单元是柱形的。涂层可以设置在由绝缘层分隔开的一层或多层中。

4. 发明授权

US09466644B2 Resistance-switching memory cell with multiple raised structures in a bottom electrode 有权
公开(公告)号：US09466644B2
公开(公告)日：2016-10-11
申请号：US14807370
申请日：2015-07-23
申请人： SanDisk 3D LLC
发明人： George Matamis , James K Kai , Vinod R Purayath , Yuan Zhang , Henry Chien
IPC分类号： H01L27/24 , H01L45/00
CPC分类号： H01L27/2463 , H01L27/2481 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/1273 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/149 , H01L45/16 , H01L45/1675
摘要： A reversible resistance-switching memory cell has multiple narrow, spaced apart bottom electrode structures. The raised structures can be formed by coating a bottom electrode layer with nano-particles and etching the bottom electrode layer. The raised structures can be independent or joined to one another at a bottom of the bottom electrode layer. A resistance-switching material is provided between and above the bottom electrode structure, followed by a top electrode layer. Or, insulation is provided between and above the bottom electrode structures, and the resistance-switching material and top electrode layer are above the insulation. Less than one-third of a cross-sectional area of each resistance-switching memory cell is consumed by the one or more raised structures. When the resistance state of the memory cell is switched, there is a smaller area in the bottom electrode for a current path, so the switching resistance is higher and the switching current is lower.

5. 发明申请

US20140227853A1 Method For Forming Resistance-Switching Memory Cell With Multiple Electrodes Using Nano-Particle Hard Mask 有权
标题翻译：使用纳米粒子硬掩模形成具有多个电极的电阻切换记忆单元的方法
公开(公告)号：US20140227853A1
公开(公告)日：2014-08-14
申请号：US13767649
申请日：2013-02-14
申请人： SanDisk 3D LLC
发明人： George Matamis , James K. Kai , Vinod R. Purayath , Yuan Zhang , Henry Chien
IPC分类号： H01L45/00
CPC分类号： H01L45/04 , H01L27/2463 , H01L27/2481 , H01L45/06 , H01L45/1233 , H01L45/1273 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/149 , H01L45/16 , H01L45/1675
摘要： In a fabrication process for reversible resistance-switching memory cells, a bottom electrode layer is coated with nano-particles. The nano-particles are used to etch the bottom electrode layer, forming multiple narrow, spaced apart bottom electrode structures for each memory cell. A resistance-switching material is then deposited between and above the bottom electrode structures, followed by a top electrode layer. Or, insulation is deposited between and above the bottom electrode structures, followed by planarizing and a wet etch to expose top surfaces of the bottom electrode structures, then deposition of the resistance-switching material and the top electrode layer. When the resistance state of the memory cell is switched, there is a smaller area in the bottom electrode for a current path, so the switching resistance is higher and the switching current is lower.
摘要翻译：在可逆电阻切换存储单元的制造工艺中，底部电极层涂覆有纳米颗粒。纳米颗粒用于蚀刻底部电极层，为每个存储单元形成多个窄的，间隔开的底部电极结构。然后在底部电极结构之间和之上沉积电阻切换材料，随后沉积上电极层。或者，在底部电极结构之间和之上沉积绝缘体，随后进行平面化和湿蚀刻以暴露底部电极结构的顶表面，然后沉积电阻切换材料和顶部电极层。当切换存储单元的电阻状态时，电流路径的底部电极的面积越小，开关电阻越高，开关电流越低。

6. 发明申请

US20150333105A1 Resistance-Switching Memory Cell With Multiple Raised Structures In A Bottom Electrode 有权
标题翻译：在底部电极中具有多个凸起结构的电阻切换存储单元
公开(公告)号：US20150333105A1
公开(公告)日：2015-11-19
申请号：US14807370
申请日：2015-07-23
申请人： SanDisk 3D LLC
发明人： George Matamis , James K. Kai , Vinod R. Purayath , Yuan Zhang , Henry Chien
IPC分类号： H01L27/24 , H01L45/00
CPC分类号： H01L27/2463 , H01L27/2481 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/1273 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/149 , H01L45/16 , H01L45/1675
摘要： A reversible resistance-switching memory cell has multiple narrow, spaced apart bottom electrode structures. The raised structures can be formed by coating a bottom electrode layer with nano-particles and etching the bottom electrode layer. The raised structures can be independent or joined to one another at a bottom of the bottom electrode layer. A resistance-switching material is provided between and above the bottom electrode structure, followed by a top electrode layer. Or, insulation is provided between and above the bottom electrode structures, and the resistance-switching material and top electrode layer are above the insulation. Less than one-third of a cross-sectional area of each resistance-switching memory cell is consumed by the one or more raised structures. When the resistance state of the memory cell is switched, there is a smaller area in the bottom electrode for a current path, so the switching resistance is higher and the switching current is lower.
摘要翻译：可逆电阻切换存储单元具有多个窄间隔开的底部电极结构。凸起结构可以通过用纳米颗粒涂覆底部电极层并蚀刻底部电极层来形成。凸起结构可以在底部电极层的底部是独立的或彼此连接的。电阻切换材料设置在底部电极结构之间和之上，随后是顶部电极层。或者，在底部电极结构之间和之上提供绝缘，并且电阻切换材料和顶部电极层在绝缘体之上。每个电阻切换存储单元的横截面积的不到三分之一被一个或多个凸起结构所消耗。当切换存储单元的电阻状态时，电流路径的底部电极的面积越小，开关电阻越高，开关电流越低。

7. 发明授权

US09123890B2 Resistance-switching memory cell with multiple raised structures in a bottom electrode 有权
标题翻译：在底部电极中具有多个凸起结构的电阻切换存储单元
公开(公告)号：US09123890B2
公开(公告)日：2015-09-01
申请号：US13767663
申请日：2013-02-14
申请人： SanDisk 3D LLC
发明人： George Matamis , James K Kai , Vinod R Purayath , Yuan Zhang , Henry Chien
IPC分类号： H01L29/06 , H01L45/00 , H01L27/24
CPC分类号： H01L27/2463 , H01L27/2481 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/1273 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/149 , H01L45/16 , H01L45/1675
摘要： A reversible resistance-switching memory cell has multiple narrow, spaced apart bottom electrode structures. The raised structures can be formed by coating a bottom electrode layer with nano-particles and etching the bottom electrode layer. The raised structures can be independent or joined to one another at a bottom of the bottom electrode layer. A resistance-switching material is provided between and above the bottom electrode structure, followed by a top electrode layer. Or, insulation is provided between and above the bottom electrode structures, and the resistance-switching material and top electrode layer are above the insulation. Less than one-third of a cross-sectional area of each resistance-switching memory cell is consumed by the one or more raised structures. When the resistance state of the memory cell is switched, there is a smaller area in the bottom electrode for a current path, so the switching resistance is higher and the switching current is lower.
摘要翻译：可逆电阻切换存储单元具有多个窄间隔开的底部电极结构。凸起结构可以通过用纳米颗粒涂覆底部电极层并蚀刻底部电极层来形成。凸起结构可以在底部电极层的底部是独立的或彼此连接的。电阻切换材料设置在底部电极结构之间和之上，随后是顶部电极层。或者，在底部电极结构之间和之上提供绝缘，并且电阻切换材料和顶部电极层在绝缘体之上。每个电阻切换存储单元的横截面积的不到三分之一被一个或多个凸起结构所消耗。当切换存储单元的电阻状态时，电流路径的底部电极的面积越小，开关电阻越高，开关电流越低。

8. 发明申请

US20140225057A1 Resistance-Switching Memory Cell With Multiple Electrodes 有权
标题翻译：具有多个电极的电阻切换存储单元
公开(公告)号：US20140225057A1
公开(公告)日：2014-08-14
申请号：US13767663
申请日：2013-02-14
申请人： SanDisk 3D LLC
发明人： George Matamis , James K. Kai , Vinod R. Purayath , Yuan Zhang , Henry Chien
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L27/2463 , H01L27/2481 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/1273 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/149 , H01L45/16 , H01L45/1675
摘要： A reversible resistance-switching memory cell has multiple narrow, spaced apart bottom electrode structures. The raised structures can be formed by coating a bottom electrode layer with nano-particles and etching the bottom electrode layer. The raised structures can be independent or joined to one another at a bottom of the bottom electrode layer. A resistance-switching material is provided between and above the bottom electrode structure, followed by a top electrode layer. Or, insulation is provided between and above the bottom electrode structures, and the resistance-switching material and top electrode layer are above the insulation. Less than one-third of a cross-sectional area of each resistance-switching memory cell is consumed by the one or more raised structures. When the resistance state of the memory cell is switched, there is a smaller area in the bottom electrode for a current path, so the switching resistance is higher and the switching current is lower.
摘要翻译：可逆电阻切换存储单元具有多个窄间隔开的底部电极结构。凸起结构可以通过用纳米颗粒涂覆底部电极层并蚀刻底部电极层来形成。凸起结构可以在底部电极层的底部是独立的或彼此连接的。电阻切换材料设置在底部电极结构之间和之上，随后是顶部电极层。或者，在底部电极结构之间和之上提供绝缘，并且电阻切换材料和顶部电极层在绝缘体之上。每个电阻切换存储单元的横截面积的不到三分之一被一个或多个凸起结构所消耗。当切换存储单元的电阻状态时，电流路径的底部电极的面积越小，开关电阻越高，开关电流越低。

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