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1. 发明申请

US20040250954A1 Plasma chamber 审中-公开
标题翻译：等离子室
公开(公告)号：US20040250954A1
公开(公告)日：2004-12-16
申请号：US10829136
申请日：2004-04-21
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Hee-hwan Choe , Sang-gab Kim , Sung-chul Kang , In-ho Song
IPC分类号： C23F001/00
CPC分类号： H01J37/32174 , H01J37/32082
摘要： A plasma chamber comprising a lower electrode and an upper electrode, and used for dry-etching an LCD, comprises a main power supply comprising a main power source to generate a main voltage having a predetermined main frequency, and a first impedance matching circuit to impedance-match the main voltage; a bias power supply comprising a bias power source to generate a bias voltage having a predetermined bias frequency, and a second impedance matching circuit to impedance-match the bias voltage; and a mixer connected to both the first impedance matching circuit and the second impedance matching circuit, receiving and mixing the main voltage and the bias voltage, and outputting the mixed voltage to one of the lower electrode and the upper electrode. With this configuration, the present invention provides a plasma chamber in which etching conditions such as an etching rate, an etching profile, a selection ratio, etc. are precisely adjusted.
摘要翻译：包括下电极和上电极并用于干蚀刻LCD的等离子体室包括主电源，其包括主电源以产生具有预定主频率的主电压，以及第一阻抗匹配电路以阻抗 - 匹配主电压; 偏置电源，其包括偏置电源以产生具有预定偏置频率的偏置电压;以及第二阻抗匹配电路，用于阻抗匹配偏置电压; 以及连接到第一阻抗匹配电路和第二阻抗匹配电路两者的混频器，接收和混合主电压和偏置电压，并将混合电压输出到下电极和上电极之一。利用这种结构，本发明提供了一种等离子体室，其中蚀刻速率，蚀刻轮廓，选择比等蚀刻条件被精确地调节。

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