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1. 发明申请

US20030169115A1 Transconductor tuning circuit 有权
标题翻译：跨导调谐电路
公开(公告)号：US20030169115A1
公开(公告)日：2003-09-11
申请号：US10373837
申请日：2003-02-27
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Jeong-Won Lee , Gea-Ok Cho , Jung-Eun Lee
IPC分类号： H03F003/191
CPC分类号： H03F3/343 , H03F3/191 , H03F3/45179 , H03F2203/45394 , H03F2203/45622 , H03F2203/45682
摘要： A transconductor tuning circuit for controlling transconductance of a transconductor. The tuning circuit includes a first MOS (Metal-Oxide Semiconductor) transistor. A source terminal of the first MOS transistor is connected to a power source. A gate terminal and a drain terminal of the first MOS transistor being connected to each other. A gate terminal and a drain terminal of a second MOS transistor being connected. A first input terminal of a first error amplifier is connected to the gate terminal of the first MOS transistor. A second input terminal of the first error amplifier is connected to the gate terminal of the second MOS transistor. The first error amplifier outputs an output signal in form of a bias signal for controlling tuning of the transconductor.
摘要翻译：用于控制跨导体的跨导的跨导体调谐电路。调谐电路包括第一MOS（金属氧化物半导体）晶体管。第一MOS晶体管的源极端子连接到电源。第一MOS晶体管的栅极端子和漏极端子彼此连接。连接第二MOS晶体管的栅极端子和漏极端子。第一误差放大器的第一输入端子连接到第一MOS晶体管的栅极端子。第一误差放大器的第二输入端子连接到第二MOS晶体管的栅极端子。第一误差放大器以偏置信号的形式输出输出信号，以控制跨导体的调谐。

2. 发明申请

US20040136278A1 Track error detection device having a function of removing a phase offset, and phase offset removing method thereof 有权
标题翻译：具有去除相位偏移的功能的轨道误差检测装置及其相位偏移消除方法
公开(公告)号：US20040136278A1
公开(公告)日：2004-07-15
申请号：US10738098
申请日：2003-12-18
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Jung-Eun Lee , Jeong-Won Lee , Soo-Jung Chang
IPC分类号： G11B007/095
CPC分类号： G11B7/0906 , G11B7/0941
摘要： A track error detection device that removes a phase offset and a phase offset removing method thereof removes an error signal generated by device circuit errors. The device includes an equalizing unit for equalizing the inputted signals A, B, C and D at a level, a comparison unit for quantizing the equalized signals A, B, C and D, and a phase shifting unit for removing phase offsets among the quantized signals A, B, C and D, based on control signals. A system control unit provides the control signals to the phase shifting unit. The track error detection device can remove all types of phase offsets which occur in the track error detection device. The accuracy and reliability of the detected track error signal is thus improved. By adjusting the phases of the quantized signals in the process of removing the phase offsets, power consumption and size of hardware is reduced.
摘要翻译：去除相位偏移的磁道误差检测装置及其相位偏移消除方法来消除由装置电路错误产生的误差信号。该装置包括用于对输入信号A，B，C和D进行均衡的均衡单元，用于量化均衡信号A，B，C和D的比较单元，以及用于去除量化后的相位偏移的相移单元信号A，B，C和D，基于控制信号。系统控制单元向相移单元提供控制信号。轨道误差检测装置可以消除轨道误差检测装置中发生的所有类型的相位偏移。因此提高了检测到的轨道误差信号的精度和可靠性。通过在去除相位偏移的过程中调整量化信号的相位，降低了硬件的功耗和尺寸。

3. 发明申请

US20040145990A1 Writable area detection device for optical recording/reproducing apparatus and method thereof 有权
标题翻译：用于光记录/再现装置的可写区域检测装置及其方法
公开(公告)号：US20040145990A1
公开(公告)日：2004-07-29
申请号：US10730060
申请日：2003-12-09
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Soo-Jung Chang , Gae-Ok Cho , Jung-Eun Lee
IPC分类号： G11B007/00
CPC分类号： G11B27/22 , G11B19/12 , G11B2220/216 , G11B2220/2545 , G11B2220/2562
摘要： A writable area detection device for an optical recording/reproducing apparatus comprises a waveform rectification unit for comparing an RF signal read from a user data area of a recording medium with a reference signal, and outputting a rectified pulse signal; a pulse generation unit for generating a signal having a pulse width including a section in which a high frequency signal of the rectified pulse signal is regularly distributed; a latch unit for latching the signal generated in the pulse generation unit; and a detection unit for detecting the section in which the high frequency signal is regularly distributed by using an output signal of the latch unit and an output signal of the pulse generation unit.
摘要翻译：一种用于光记录/再现装置的可写区域检测装置，包括：波形整流单元，用于将从记录介质的用户数据区读取的RF信号与参考信号进行比较，并输出整流脉冲信号; 脉冲发生单元，用于产生具有脉冲宽度的信号，所述脉冲宽度包括其中经整流脉冲信号的高频信号被规则分布的部分; 锁存单元，用于锁存在脉冲发生单元中产生的信号; 以及检测单元，用于通过使用锁存单元的输出信号和脉冲发生单元的输出信号来检测其中高频信号被有规律地分布的部分。

4. 发明申请

US20030169080A1 Transconductor having structure of crossing pairs 失效
标题翻译：具有交叉对结构的跨导体
公开(公告)号：US20030169080A1
公开(公告)日：2003-09-11
申请号：US10359252
申请日：2003-02-06
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Jeong-Won Lee , Gea-Ok Cho , Jung-Eun Lee
IPC分类号： H03D001/00 , H02M011/00
CPC分类号： H03F3/45807 , H02M7/217 , H03F1/223 , H03F3/45286 , H03F2203/45394
摘要： A transconductor for generating a current corresponding to an input voltage. The transconductor has a crossing pairs structure. The transconductor comprises a first and a second MOS(Metal-Oxide Semiconductor) transistors mutually connected in series to a voltage source. A first bipolar transistor is connected to a current source. A collector terminal of the first bipolar terminal is connected to an output current terminal. An emitter terminal of the first bipolar terminal is connected to a gate terminal of the second MOS transistor. A second bipolar transistor is connected in series to the first bipolar transistor. A base terminal of the second bipolar transistor is connected to a node between the first MOS transistor and the second MOS transistor. A third MOS transistor is provided. A gate terminal of the third MOS transistor is connected to an input terminal for a signal from outside. A drain terminal of the third MOS transistor is connected to an emitter terminal of the second bipolar transistor.
摘要翻译：用于产生对应于输入电压的电流的跨导体。跨导体具有交叉对结构。跨导体包括与电压源串联连接的第一和第二MOS（金属氧化物半导体）晶体管。第一双极晶体管连接到电流源。第一双极型端子的集电极端子连接到输出电流端子。第一双极型端子的发射极端子连接到第二MOS晶体管的栅极端子。第二双极晶体管与第一双极晶体管串联连接。第二双极晶体管的基极连接到第一MOS晶体管和第二MOS晶体管之间的节点。提供第三MOS晶体管。第三MOS晶体管的栅极端子连接到用于来自外部的信号的输入端子。第三MOS晶体管的漏极端子连接到第二双极晶体管的发射极端子。

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