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1. 发明申请

US20150235666A1 SPINDLE MOTOR AND RECORDING DISK DRIVING DEVICE INCLUDING THE SAME 审中-公开
标题翻译：主轴电机和记录盘驱动装置，包括它们
公开(公告)号：US20150235666A1
公开(公告)日：2015-08-20
申请号：US14612211
申请日：2015-02-02
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Kwan Soo Yun , Ji Hye Kim , Sung Tai Jung , Duck Shik Kim
IPC分类号： G11B19/20 , H02K1/16 , H02K5/06 , H02K5/22
CPC分类号： G11B19/2009 , H02K1/146 , H02K3/522 , H02K5/1675 , H02K7/14
摘要： There is provided a spindle motor including: a base member including an installation part extended upwardly in an axial direction and a coupling hole formed to be disposed around the installation part; a stator core including winding grooves into which a coil is inserted and wound therearound and protrusion parts formed on a surface opposite to a surface in which the wounding groove is formed, and fixedly installed in the installation part; and a strength reinforcing member including a concave groove formed therein so as to be disposed to face the protrusion part, and coupled to the coupling hole in order to reinforce strength of the base member.
摘要翻译：提供一种主轴电动机，其包括：基部构件，包括沿轴向向上延伸的安装部分和形成为设置在安装部分周围的联接孔; 定子铁心，其包括绕线槽，线圈被插入并缠绕在其上，突起部分形成在与形成有伤口的表面相对的表面上，并且固定地安装在安装部分中; 以及加强构件，其包括形成在其中的凹槽，以与所述突出部分相对设置并且联接到所述联接孔，以便增强所述基底构件的强度。

2. 发明授权

US09209287B2 Power semiconductor device 有权
标题翻译：功率半导体器件
公开(公告)号：US09209287B2
公开(公告)日：2015-12-08
申请号：US14271075
申请日：2014-05-06
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Jae Hoon Park , Ji Hye Kim , Kyu Hyun Mo , Ji Yeon Oh , Dong Soo Seo
IPC分类号： H01L29/739 , H01L29/06 , H01L29/10
CPC分类号： H01L29/7397 , H01L29/0623 , H01L29/0696 , H01L29/1095
摘要： A power semiconductor device may include: a first conductivity-type first semiconductor region; a second conductivity-type second semiconductor region disposed above the first semiconductor region; a trench gate penetrating through the second semiconductor region and a portion of the first semiconductor region; a third semiconductor region disposed on both sides of the trench gate and disposed on an inner side of an upper portion of the second semiconductor region; and a device protective region disposed in the third semiconductor region.
摘要翻译：功率半导体器件可以包括：第一导电类型的第一半导体区域; 设置在所述第一半导体区域上方的第二导电型第二半导体区域; 穿过所述第二半导体区域的沟槽栅极和所述第一半导体区域的一部分; 第三半导体区域，设置在所述沟槽栅极的两侧，并且设置在所述第二半导体区域的上部的内侧; 以及设置在第三半导体区域中的器件保护区域。

3. 发明授权

US09252212B2 Power semiconductor device 有权
标题翻译：功率半导体器件
公开(公告)号：US09252212B2
公开(公告)日：2016-02-02
申请号：US14243873
申请日：2014-04-02
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Jae Hoon Park , Ji Hye Kim , Kyu Hyun Mo , Dong Soo Seo , In Hyuk Song
IPC分类号： H01L29/66 , H01L29/06 , H01L29/739 , H01L29/10
CPC分类号： H01L29/063 , H01L29/1095 , H01L29/7397
摘要： A power semiconductor device may include: an active region in which a current flows through a channel formed when the device being turned on; a termination region disposed around the active region; a first semiconductor region of a first conductive type disposed in the termination region in a direction from the active region to the termination region; and a second semiconductor region of a second conductive type disposed in the termination region in the direction from the active region to the termination region, the first semiconductor region and the second semiconductor region being disposed alternately.
摘要翻译：功率半导体器件可以包括：有源区域，其中电流流过当器件导通时形成的沟道; 设置在所述有源区域周围的端接区域; 第一导电类型的第一半导体区域，设置在从所述有源区域到所述端接区域的方向上的所述端接区域中; 以及第二导电类型的第二半导体区域，其设置在从所述有源区域到所述端接区域的方向上的所述端接区域中，所述第一半导体区域和所述第二半导体区域交替布置。

4. 发明申请

US20150187922A1 POWER SEMICONDUCTOR DEVICE 审中-公开
标题翻译：功率半导体器件
公开(公告)号：US20150187922A1
公开(公告)日：2015-07-02
申请号：US14274249
申请日：2014-05-09
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： In Hyuk SONG , Ji Yeon Oh , Ji Hye Kim , Sun Jae Yoon , Jae Hoon Park
IPC分类号： H01L29/739 , H01L29/10
CPC分类号： H01L29/7397 , H01L29/42368
摘要： A power semiconductor device may include: a first conductivity-type drift region in which a plurality of trench gates each including a gate insulating layer disposed on a surface thereof and a conductive material filling the interior thereof are disposed; a second conductivity-type body region disposed on an inner side of an upper portion of the drift region and disposed to be in contact with the trench gate; a first conductivity-type emitter region disposed on an inner side of an upper portion of the body region and disposed to be in contact with the trench gate; and a hole accumulation region disposed in the drift region, disposed below the body region, and disposed between the trench gates.
摘要翻译：功率半导体器件可以包括：第一导电型漂移区，其中设置有各自包括设置在其表面上的栅极绝缘层的多个沟槽栅极和填充在其内部的导电材料; 第二导电型体区域，其设置在所述漂移区域的上部的内侧，并设置成与所述沟槽栅极接触; 第一导电型发射极区域，设置在所述主体区域的上部的内侧并且设置成与所述沟槽栅极接触; 以及设置在所述漂移区域中的空穴积聚区域，设置在所述主体区域的下方，并且设置在所述沟槽栅极之间。

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