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1. 发明授权

US09209287B2 Power semiconductor device 有权
标题翻译：功率半导体器件
公开(公告)号：US09209287B2
公开(公告)日：2015-12-08
申请号：US14271075
申请日：2014-05-06
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Jae Hoon Park , Ji Hye Kim , Kyu Hyun Mo , Ji Yeon Oh , Dong Soo Seo
IPC分类号： H01L29/739 , H01L29/06 , H01L29/10
CPC分类号： H01L29/7397 , H01L29/0623 , H01L29/0696 , H01L29/1095
摘要： A power semiconductor device may include: a first conductivity-type first semiconductor region; a second conductivity-type second semiconductor region disposed above the first semiconductor region; a trench gate penetrating through the second semiconductor region and a portion of the first semiconductor region; a third semiconductor region disposed on both sides of the trench gate and disposed on an inner side of an upper portion of the second semiconductor region; and a device protective region disposed in the third semiconductor region.
摘要翻译：功率半导体器件可以包括：第一导电类型的第一半导体区域; 设置在所述第一半导体区域上方的第二导电型第二半导体区域; 穿过所述第二半导体区域的沟槽栅极和所述第一半导体区域的一部分; 第三半导体区域，设置在所述沟槽栅极的两侧，并且设置在所述第二半导体区域的上部的内侧; 以及设置在第三半导体区域中的器件保护区域。

2. 发明授权

US09184247B2 Power semiconductor device capable of maintaining a withstand voltage 有权
标题翻译：能够保持耐压的功率半导体器件
公开(公告)号：US09184247B2
公开(公告)日：2015-11-10
申请号：US13795858
申请日：2013-03-12
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： In Hyuk Song , Kee Ju Um , Chang Su Jang , Jae Hoon Park , Dong Soo Seo
IPC分类号： H01L29/732 , H01L29/739 , H01L29/40 , H01L29/417 , H01L29/66 , H01L29/06
CPC分类号： H01L29/402 , H01L29/0619 , H01L29/41741 , H01L29/66348 , H01L29/7397
摘要： Disclosed herein is a power semiconductor device. The power semiconductor device includes a second conductive type first junction termination extension (JTE) layer that is formed so as to be in contact with one side of the second conductive type well layer, a second conductive type second JTE layer that is formed on the same line as the second conductive type first JTE layer, and is formed so as to be spaced apart from the second conductive type first JTE layer in a length direction of the substrate, and a poly silicon layer that is formed so as to be in contact with the second conductive type well layer and an upper portion of the second conductive type first JTE layer.
摘要翻译：这里公开了功率半导体器件。功率半导体器件包括形成为与第二导电类型阱层的一侧接触的第二导电型第一结端接延伸（JTE）层，形成在其上的第二导电型第二JTE层线作为第二导电型第一JTE层，并且形成为在基板的长度方向上与第二导电型第一JTE层间隔开，并且形成为与第二导电型第一JTE层接触的多晶硅层第二导电类型阱层和第二导电型第一JTE层的上部。

3. 发明授权

US09153678B2 Power semiconductor device and method of manufacturing the same 有权
标题翻译：功率半导体器件及其制造方法
公开(公告)号：US09153678B2
公开(公告)日：2015-10-06
申请号：US13871082
申请日：2013-04-26
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Kee Ju Um , In Hyuk Song , Chang Su Jang , Jaehoon Park , Dong Soo Seo
IPC分类号： H01L29/78 , H01L29/66 , H01L29/739 , H01L29/06
CPC分类号： H01L29/7397 , H01L29/0615 , H01L29/0619 , H01L29/0688 , H01L29/0847 , H01L29/1095 , H01L29/42372 , H01L29/4238 , H01L29/66348
摘要： There is provided a power semiconductor device including a contact formed in an active region, a trench gate extendedly formed from the first region into a first termination region and formed alternately with the contact, a first conductive well formed between the contact of the active region and the trench gate, a first conductive well extending portion formed in the first termination region and a part of a second termination region, and a first conductive field limiting ring formed in the second termination region and contacting the well extending portion.
摘要翻译：提供了一种功率半导体器件，包括形成在有源区中的触点，从第一区延伸形成第一终端区并与触点交替形成的沟槽栅，形成在有源区的触点和沟槽栅极，形成在第一端接区域中的第一导电阱延伸部分和第二端接区域的一部分，以及形成在第二端接区域中并接触阱延伸部分的第一导电场限制环。

4. 发明申请

US20140167150A1 POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：功率半导体器件及其制造方法
公开(公告)号：US20140167150A1
公开(公告)日：2014-06-19
申请号：US13871082
申请日：2013-04-26
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Kee Ju UM , In Hyuk Song , Chang Su Jang , Jaehoon Park , Dong Soo Seo
IPC分类号： H01L29/78 , H01L29/66
CPC分类号： H01L29/7397 , H01L29/0615 , H01L29/0619 , H01L29/0688 , H01L29/0847 , H01L29/1095 , H01L29/42372 , H01L29/4238 , H01L29/66348
摘要： There is provided a power semiconductor device including a contact formed in an active region, a trench gate extendedly formed from the first region into a first termination region and formed alternately with the contact, a first conductive well formed between the contact of the active region and the trench gate, a first conductive well extending portion formed in the first termination region and a part of a second termination region, and a first conductive field limiting ring formed in the second termination region and contacting the well extending portion.
摘要翻译：提供了一种功率半导体器件，包括形成在有源区中的触点，从第一区延伸形成第一终端区并与触点交替形成的沟槽栅，形成在有源区的触点和沟槽栅极，形成在第一端接区域中的第一导电阱延伸部分和第二端接区域的一部分，以及形成在第二端接区域中并接触阱延伸部分的第一导电场限制环。

5. 发明申请

US20140145291A1 POWER SEMICONDUCTOR DEVICE 有权
标题翻译：功率半导体器件
公开(公告)号：US20140145291A1
公开(公告)日：2014-05-29
申请号：US13795858
申请日：2013-03-12
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： In Hyuk Song , Kee Ju Um , Chang Su Jang , Jae Hoon Park , Dong Soo Seo
IPC分类号： H01L29/06
CPC分类号： H01L29/402 , H01L29/0619 , H01L29/41741 , H01L29/66348 , H01L29/7397
摘要： Disclosed herein is a power semiconductor device. The power semiconductor device includes a second conductive type first junction termination extension (JTE) layer that is formed so as to be in contact with one side of the second conductive type well layer, a second conductive type second JTE layer that is formed on the same line as the second conductive type first JTE layer, and is formed so as to be spaced apart from the second conductive type first JTE layer in a length direction of the substrate, and a poly silicon layer that is formed so as to be in contact with the second conductive type well layer and an upper portion of the second conductive type first JTE layer.
摘要翻译：这里公开了功率半导体器件。功率半导体器件包括形成为与第二导电类型阱层的一侧接触的第二导电型第一结端接延伸（JTE）层，形成在其上的第二导电型第二JTE层线作为第二导电型第一JTE层，并且形成为在基板的长度方向上与第二导电型第一JTE层间隔开，并且形成为与第二导电型第一JTE层接触的多晶硅层第二导电类型阱层和第二导电型第一JTE层的上部。

6. 发明授权

US09318589B2 Insulated gate bipolar transistor 有权
标题翻译：绝缘栅双极晶体管
公开(公告)号：US09318589B2
公开(公告)日：2016-04-19
申请号：US13751916
申请日：2013-01-28
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Jaehoon Park , Chang Su Jang , In Hyuk Song , Kee Ju Um , Dong Soo Seo
IPC分类号： H01L29/739 , H01L29/10
CPC分类号： H01L29/7397 , H01L29/1095
摘要： There is provided an insulated gate bipolar transistor including: a first semiconductor area of a first conductivity type; a second semiconductor area of a second conductivity type formed on one surface of the first semiconductor area; third semiconductor areas of the first conductivity type continuously formed in a length direction on one surface of the second semiconductor area; a plurality of trenches formed between the third semiconductor areas, extending to an inside of the second semiconductor area, and being continuous in the length direction; a fourth semiconductor area of the second conductivity type formed on one surface of the third semiconductor areas, insulation layers formed inside the trenches; gate electrodes buried inside the insulation layers; and a barrier layer formed in at least one of locations corresponding to the third semiconductor areas inside the second semiconductor area.
摘要翻译：提供了一种绝缘栅双极晶体管，包括：第一导电类型的第一半导体区域; 形成在第一半导体区域的一个表面上的第二导电类型的第二半导体区域; 在第二半导体区域的一个表面上沿长度方向连续形成的第一导电类型的第三半导体区域; 多个沟槽，形成在第三半导体区域之间，延伸到第二半导体区域的内部，并且在长度方向上是连续的; 形成在第三半导体区域的一个表面上的第二导电类型的第四半导体区域，形成在沟槽内的绝缘层; 掩埋在绝缘层内的栅电极; 以及形成在与所述第二半导体区域内的所述第三半导体区域对应的位置中的至少一个的阻挡层。

7. 发明授权

US09252212B2 Power semiconductor device 有权
标题翻译：功率半导体器件
公开(公告)号：US09252212B2
公开(公告)日：2016-02-02
申请号：US14243873
申请日：2014-04-02
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Jae Hoon Park , Ji Hye Kim , Kyu Hyun Mo , Dong Soo Seo , In Hyuk Song
IPC分类号： H01L29/66 , H01L29/06 , H01L29/739 , H01L29/10
CPC分类号： H01L29/063 , H01L29/1095 , H01L29/7397
摘要： A power semiconductor device may include: an active region in which a current flows through a channel formed when the device being turned on; a termination region disposed around the active region; a first semiconductor region of a first conductive type disposed in the termination region in a direction from the active region to the termination region; and a second semiconductor region of a second conductive type disposed in the termination region in the direction from the active region to the termination region, the first semiconductor region and the second semiconductor region being disposed alternately.
摘要翻译：功率半导体器件可以包括：有源区域，其中电流流过当器件导通时形成的沟道; 设置在所述有源区域周围的端接区域; 第一导电类型的第一半导体区域，设置在从所述有源区域到所述端接区域的方向上的所述端接区域中; 以及第二导电类型的第二半导体区域，其设置在从所述有源区域到所述端接区域的方向上的所述端接区域中，所述第一半导体区域和所述第二半导体区域交替布置。

8. 发明授权

US09076811B2 Power semiconductor device and method of manufacturing the same 有权
标题翻译：功率半导体器件及其制造方法
公开(公告)号：US09076811B2
公开(公告)日：2015-07-07
申请号：US14149578
申请日：2014-01-07
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： In Hyuk Song , Jae Hoon Park , Dong Soo Seo
IPC分类号： H01L29/78 , H01L29/66 , H01L29/423 , H01L29/739 , H01L21/265 , H01L29/36 , H01L21/22
CPC分类号： H01L29/6634 , H01L21/046 , H01L21/22 , H01L21/2253 , H01L21/265 , H01L21/3081 , H01L21/324 , H01L29/0847 , H01L29/1095 , H01L29/36 , H01L29/4236 , H01L29/66325 , H01L29/66348 , H01L29/66674 , H01L29/7393 , H01L29/7397 , H01L29/7825
摘要： Disclosed herein is a power semiconductor device including: a base substrate having one surface and the other surface and formed of a first conductive type drift layer; a first conductive type diffusion layer formed on one surface of the base substrate and having a concentration higher than that of the first conductive type drift layer; and a trench formed so as to penetrate through the second conductive type well layer and the first conductive type diffusion layer from one surface of the base substrate including the second conductive type well layer in a thickness direction.
摘要翻译：本发明公开了一种功率半导体器件，包括：具有一个表面和另一个表面并由第一导电型漂移层形成的基底基板; 形成在所述基底基板的一个表面上并且具有比所述第一导电型漂移层的浓度高的浓度的第一导电型扩散层; 以及形成为从厚度方向包括第二导电类型阱层的基底基板的一个表面穿过第二导电类型阱层和第一导电型扩散层的沟槽。

9. 发明申请

US20140117407A1 POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：功率半导体器件及其制造方法
公开(公告)号：US20140117407A1
公开(公告)日：2014-05-01
申请号：US14149578
申请日：2014-01-07
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： In Hyuk Song , Jae Hoon Park , Dong Soo Seo
IPC分类号： H01L29/66 , H01L21/265 , H01L29/739
CPC分类号： H01L29/6634 , H01L21/046 , H01L21/22 , H01L21/2253 , H01L21/265 , H01L21/3081 , H01L21/324 , H01L29/0847 , H01L29/1095 , H01L29/36 , H01L29/4236 , H01L29/66325 , H01L29/66348 , H01L29/66674 , H01L29/7393 , H01L29/7397 , H01L29/7825
摘要： Disclosed herein is a power semiconductor device including: a base substrate having one surface and the other surface and formed of a first conductive type drift layer; a first conductive type diffusion layer formed on one surface of the base substrate and having a concentration higher than that of the first conductive type drift layer; and a trench formed so as to penetrate through the second conductive type well layer and the first conductive type diffusion layer from one surface of the base substrate including the second conductive type well layer in a thickness direction.
摘要翻译：本发明公开了一种功率半导体器件，包括：具有一个表面和另一个表面并由第一导电型漂移层形成的基底基板; 形成在所述基底基板的一个表面上并且具有比所述第一导电型漂移层的浓度高的浓度的第一导电型扩散层; 以及形成为从厚度方向包括第二导电类型阱层的基底基板的一个表面穿过第二导电型阱层和第一导电型扩散层的沟槽。

10. 发明申请

US20140061717A1 POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
公开(公告)号：US20140061717A1
公开(公告)日：2014-03-06
申请号：US13688320
申请日：2012-11-29
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： In Hyuk Song , Jae Hoon Park , Dong Soo Seo
IPC分类号： H01L29/739 , H01L29/66
CPC分类号： H01L29/6634 , H01L21/046 , H01L21/22 , H01L21/2253 , H01L21/265 , H01L21/3081 , H01L21/324 , H01L29/0847 , H01L29/1095 , H01L29/36 , H01L29/4236 , H01L29/66325 , H01L29/66348 , H01L29/66674 , H01L29/7393 , H01L29/7397 , H01L29/7825
摘要： Disclosed herein is a power semiconductor device including: a base substrate having one surface and the other surface and formed of a first conductive type drift layer; a first conductive type diffusion layer formed on one surface of the base substrate and having a concentration higher than that of the first conductive type drift layer; and a trench formed so as to penetrate through the second conductive type well layer and the first conductive type diffusion layer from one surface of the base substrate including the second conductive type well layer in a thickness direction.

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