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1. 发明授权

US12050305B2 Laser processing apparatus 有权
公开(公告)号：US12050305B2
公开(公告)日：2024-07-30
申请号：US17361560
申请日：2021-06-29
申请人： Samsung Display Co., Ltd.
发明人： Emil Aslanov , Je Kil Ryu , Hae Sook Lee , Kyung Hoon Chung , Gyoo Wan Han
IPC分类号： B23K26/06 , B23K26/082 , G02B13/00 , G02B26/10 , G02B27/10
CPC分类号： G02B13/0005 , B23K26/0643 , B23K26/082 , G02B26/101 , G02B26/105 , G02B27/106
摘要： A laser processing apparatus includes a laser source which generates a laser beam; a scanner unit disposed in an optical path of the laser beam from the laser source and which adjusts the optical path of the laser beam from the laser source in a first direction or in a second direction different from the first direction; and a reflector unit disposed in an optical path of the laser beam adjusted by the scanner unit and which reflects the laser beam adjusted by the scanner unit, where the reflector unit includes a first sub-reflector unit which shifts an optical path of the laser adjusted by the scanner unit in the first direction, and a second sub-reflector unit which shifts an optical path of the laser beam adjusted by the scanner unit in a third direction opposite to the first direction.

2. 发明申请

US20220212291A1 LASER CRYSTALLIZATION APPARATUS 有权
公开(公告)号：US20220212291A1
公开(公告)日：2022-07-07
申请号：US17503363
申请日：2021-10-18
申请人： Samsung Display Co., LTD.
发明人： Akifumi Sangu , Je Kil Ryu , Cheol Ho Park , Hae Sook Lee , Jin Hong Jeun , Young Su Chae , Gyoo Wan Han
IPC分类号： B23K26/50 , B23K26/06
摘要： A laser crystallization apparatus according to an embodiment includes a light source unit irradiating a laser beam; and an optical unit to which the laser beam is incident, wherein the optical unit includes a first portion and a second portion bonded to each other on a bonded surface, and a first width of the first portion and a second width of the second portion are the same as each other on the bonded surface based on a direction parallel to the incident direction of the laser beam.

3. 发明授权

US09564322B1 Method of excimer laser annealing 有权
标题翻译：准分子激光退火方法
公开(公告)号：US09564322B1
公开(公告)日：2017-02-07
申请号：US15163346
申请日：2016-05-24
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Gyoo Wan Han , Vladimir Tokarev , Je Kil Ryu
IPC分类号： H01L21/02
CPC分类号： H01L21/02422 , H01L21/02532 , H01L21/02595 , H01L21/02678 , H01L21/02686 , H01L21/02691
摘要： A method of excimer laser annealing includes generating a focused long line beam with a laser beam output from at least one laser source; and scanning the long line beam in a direction perpendicular to a long axis of the long line beam along a surface of an amorphous semiconductor film on a substrate. The long line beam has a normalized beam angular divergence half-width φ=arctan(tan θy/sin θ) that is less than a critical value φc, where θy represents a beam angular divergence half-width measured along the long axis of the long line beam on the surface of the amorphous semiconductor film, θ represents a mean incidence angle of the long line beam on the surface of the amorphous semiconductor film, and φc is approximately 30°.
摘要翻译：准分子激光退火的方法包括：从至少一个激光源输出的激光束产生聚焦的长线束; 并且沿着与长条线束的长轴垂直的方向沿着衬底上的非晶半导体膜的表面扫描长线束。长线光束具有小于临界值φc的归一化光束角度发散半角φ= arctan（tanθy/sinθ），其中θy表示沿长轴测量的光束角度发散半角在非晶半导体膜的表面上的线束，θ表示非线性半导体膜表面上的长线光束的平均入射角，φc约为30°。

4. 发明授权

US10515832B2 Laser processing apparatus and method for manufacturing the same 有权
公开(公告)号：US10515832B2
公开(公告)日：2019-12-24
申请号：US15809537
申请日：2017-11-10
申请人： Samsung Display Co. Ltd.
发明人： Emil Aslanov , Je Kil Ryu , Hae Sook Lee , Young Geun Cho , Gyoo Wan Han
IPC分类号： H01L21/67 , G02B19/00 , G02B27/12 , B23K26/06 , G02B26/08 , G02B27/09 , H01L27/12 , H01L21/02 , G02B27/00 , G02B3/00 , B23K26/067 , B23K103/00
摘要： A laser processing apparatus includes a laser beam generating unit which emits a laser beam, a lens unit which divides the laser beam into a plurality of laser beams, and a light condensing unit which condenses the plurality of laser beams. The lens unit includes a first lens array having a first central axis and a second lens array having a second central axis, and wherein at least one of the first lens array and the second lens array reciprocates such that the first central axis and the second central axis are deviated from each other.

5. 发明授权

US09688094B2 Method for cutting substrate 有权
公开(公告)号：US09688094B2
公开(公告)日：2017-06-27
申请号：US14986973
申请日：2016-01-04
申请人： Samsung Display Co., Ltd. , Philoptics Co., Ltd.
发明人： Il Young Jeong , Tae Yong Kim , Cheol Lae Roh , Je Kil Ryu , Jeong Hun Woo , Gyoo Wan Han , Ki Su Han , Tae Hyoung Cho , Jong Nam Moon
IPC分类号： B44C1/22 , C03B33/09 , C03B33/02 , C03B33/07 , C03B33/08 , H01L21/78 , B23K26/06 , B23K26/38
CPC分类号： B44C1/228 , B23K26/0626 , B23K26/38 , C03B33/0222 , C03B33/07 , C03B33/082 , C03B33/091 , H01L21/78
摘要： A method for cutting a substrate includes: radiating, as part of a first laser radiating process, a laser towards a surface of the substrate to form a first groove in a substrate. Radiating the laser towards the surface includes radiating, in sequence, the laser towards a first outer point (FOP), a second outer point (SOP), a first intermediate point (FIP), a second intermediate point (SIP), and a first cut point (FCP) of the surface, each of the points being spaced apart from one another by one or more distances. The FCP corresponds to a cut line of the substrate. The FOP and the SOP are respectively disposed at lateral sides of the FCP. The FIP is disposed between the FCP and the FOP. The SIP is disposed between the FCP and the SOP. The same kind and intensity of laser is radiated towards each of the points.

6. 发明授权

US11079571B2 Laser processing apparatus 有权
公开(公告)号：US11079571B2
公开(公告)日：2021-08-03
申请号：US15793698
申请日：2017-10-25
申请人： Samsung Display Co. Ltd.
发明人： Emil Aslanov , Je Kil Ryu , Hae Sook Lee , Kyung Hoon Chung , Gyoo Wan Han
IPC分类号： G02B13/00 , B23K26/06 , G02B26/10 , B23K26/082 , G02B27/10
摘要： A laser processing apparatus includes a laser source which generates a laser beam; a scanner unit disposed in an optical path of the laser beam from the laser source and which adjusts the optical path of the laser beam from the laser source in a first direction or in a second direction different from the first direction; and a reflector unit disposed in an optical path of the laser beam adjusted by the scanner unit and which reflects the laser beam adjusted by the scanner unit, where the reflector unit includes a first sub-reflector unit which shifts an optical path of the laser adjusted by the scanner unit in the first direction, and a second sub-reflector unit which shifts an optical path of the laser beam adjusted by the scanner unit in a third direction opposite to the first direction.

7. 发明授权

US09299613B2 Method for cutting substrate 有权
标题翻译：切割基材的方法
公开(公告)号：US09299613B2
公开(公告)日：2016-03-29
申请号：US14324825
申请日：2014-07-07
申请人： Samsung Display Co., Ltd. , Philoptics Co., Ltd.
发明人： Il Young Jeong , Tae Yong Kim , Cheol Lae Roh , Je Kil Ryu , Jeong Hun Woo , Gyoo Wan Han , Ki Su Han , Tae Hyoung Cho , Jong Nam Moon
IPC分类号： H01L21/78 , C03B33/09 , C03B33/02 , C03B33/07 , C03B33/08 , B23K26/06 , B23K26/38
CPC分类号： B44C1/228 , B23K26/0626 , B23K26/38 , C03B33/0222 , C03B33/07 , C03B33/082 , C03B33/091 , H01L21/78
摘要： A method for cutting a substrate includes: radiating, as part of a first laser radiating process, a laser towards a surface of the substrate to form a first groove in a substrate. Radiating the laser towards the surface includes radiating, in sequence, the laser towards a first outer point (FOP), a second outer point (SOP), a first intermediate point (FIP), a second intermediate point (SIP), and a first cut point (FCP) of the surface, each of the points being spaced apart from one another by one or more distances. The FCP corresponds to a cut line of the substrate. The FOP and the SOP are respectively disposed at lateral sides of the FCP. The FIP is disposed between the FCP and the FOP. The SIP is disposed between the FCP and the SOP. The same kind and intensity of laser is radiated towards each of the points.
摘要翻译：一种用于切割衬底的方法包括：作为第一激光辐射处理的一部分，朝向衬底的表面辐射激光，以在衬底中形成第一凹槽。朝向表面辐射激光包括依次将激光朝向第一外部点（FOP），第二外部点（SOP），第一中间点（FIP），第二中间点（SIP）和第一外部点切割点（FCP），每个点彼此间隔开一个或多个距离。 FCP对应于基板的切割线。 FOP和SOP分别设置在FCP的侧面。 FIP位于FCP和FOP之间。 SIP位于FCP和SOP之间。相同种类和强度的激光辐射到每个点。

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