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    • 8. 发明授权
    • Silicon wafer
    • 硅晶片
    • US06599603B1
    • 2003-07-29
    • US09673955
    • 2000-10-24
    • Masahiro KatoMasaro TamatsukaOsamu ImaiAkihiro KimuraTomosuke Yoshida
    • Masahiro KatoMasaro TamatsukaOsamu ImaiAkihiro KimuraTomosuke Yoshida
    • C30B2906
    • C30B29/06C30B15/00H01L21/3225Y10T428/21
    • The present invention provides a CZ silicon wafer, wherein the wafer includes rod-like void defects and/or plate-like void defects inside thereof, and a CZ silicon wafer, wherein the silicon wafer includes void defects inside the wafer, a maximum value of a ratio between long side length L1 and short side length L2 (L1/L2) in an optional rectangle circumscribed the void defect image projected on an optional {110} plane is 2.5 or more, and the silicon wafer including rod-like void defects and/or plate-like void defects inside the wafer, wherein a void defect density of the silicon wafer at a depth of from the wafer surface to at least 0.5 &mgr;m after the heat treatment is ½ or less than that of inside the wafer. According to this, the silicon wafer, which is suitable for expanding reducing effect of void defects by heat treatment up to a deeper region, can be obtained.
    • 本发明提供了一种CZ硅晶片,其中晶片在其内部包括棒状空隙缺陷和/或板状空隙缺陷,以及CZ硅晶片,其中硅晶片包括晶片内的空隙,其最大值 在可选择的{110}平面上投影的空隙缺陷图像的任意矩形中的长边长L1和短边长L2之间的比率(L1 / L2)为2.5以上,硅晶片包括棒状空隙, /或晶片内的板状空隙缺陷,其中在晶片表面的深度处的硅晶片的空隙缺陷密度在热处理之后至少为0.5微米的半孔缺陷密度为晶片内部的1/2以下。 据此,可以获得适合于通过热处理直到更深的区域来减少空隙缺陷的效果的硅晶片。