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1. 发明申请

US20090007860A1 HIGH-POWER ENGINE AND VEHICLE 审中-公开
标题翻译：大功率发动机和车辆
公开(公告)号：US20090007860A1
公开(公告)日：2009-01-08
申请号：US11573062
申请日：2005-07-25
申请人： Ryusuke Kato , Akira Ishizaki , Yoshihiko Moriya
发明人： Ryusuke Kato , Akira Ishizaki , Yoshihiko Moriya
IPC分类号： F01P1/08
CPC分类号： F02M35/162 , F02D9/10 , F02F1/4235 , F02F2001/245 , F02M35/10072 , F02M35/10085 , F02M35/10216 , F02M69/044
摘要： A length of a partition of an intake port is set such that the ratio between the length of the partition and the distance between the centers of adjacent intake valves is not less than 0.45 nor more than 0.72. An injector is attached on the upper side of a throttle body. The angle Φ at which the injector is attached is set to be not less than 42 degrees nor more than 55 degrees. The injection starting timing of the injector is set within the periods in which the intake valves are closed.
摘要翻译：进气口隔板的长度被设定为使隔板的长度与相邻的进气门的中心之间的距离之比不小于0.45，也不大于0.72。喷油器安装在节气门体的上侧。喷射器附接的角度Phi被设定为不小于42度，也不大于55度。喷射器的喷射开始时刻被设定在进气门关闭的时段内。

2. 发明授权

US07418818B2 Exhaust system, and engine device and vehicle with the same 有权
标题翻译：排气系统，发动机装置和车辆相同
公开(公告)号：US07418818B2
公开(公告)日：2008-09-02
申请号：US11419088
申请日：2006-05-18
申请人： Ryusuke Kato , Toshihiko Takahashi , Yoshihiko Moriya
发明人： Ryusuke Kato , Toshihiko Takahashi , Yoshihiko Moriya
IPC分类号： F01N7/00
CPC分类号： F01N13/1805 , F01N3/2803 , F01N3/2892 , F01N13/009 , F01N13/0093 , F01N2330/34 , F01N2470/00 , Y02A50/2322
摘要： An exhaust system includes a first exhaust pipe group, a first catalyst device, and a second exhaust pipe group. A first coupling pipe of the first exhaust pipe group includes spaces in communication with respective first exhaust pipes. A second coupling pipe of the second exhaust pipe group includes spaces in communication with respective second exhaust pipes. The first exhaust pipe group and the second exhaust pipe group are joined such that the respective spaces are opposed to one another, with the first catalyst device interposed therebetween.
摘要翻译：排气系统包括第一排气管组，第一催化剂装置和第二排气管组。第一排气管组的第一联接管包括与相应的第一排气管连通的空间。第二排气管组的第二联接管包括与相应的第二排气管连通的空间。第一排气管组和第二排气管组连接，使得各个空间彼此相对，其中第一催化剂装置插入其间。

3. 发明授权

US5193508A Fuel injection system 失效
标题翻译：燃油喷射系统
公开(公告)号：US5193508A
公开(公告)日：1993-03-16
申请号：US515205
申请日：1990-04-27
申请人： Yu Motoyama , Ryusuke Kato , Yoshihiko Moriya
发明人： Yu Motoyama , Ryusuke Kato , Yoshihiko Moriya
IPC分类号： F02M69/00 , F02B1/04 , F02B17/00 , F02B23/10 , F02B75/02 , F02B75/12 , F02B75/18 , F02D41/10 , F02D41/32 , F02M63/00 , F02M69/10
CPC分类号： F02D41/10 , F02B17/005 , F02D41/3094 , F02D41/32 , F02B1/04 , F02B2075/025 , F02B2075/125 , F02B2075/1812 , F02D2200/0602 , F02D2250/31 , F02D2400/04 , Y02T10/123
摘要： Two embodiments of fuel injection systems for two cycle crankcase compression internal combustion engines that employ two fuel injectors. One fuel injector injects into the combustion chamber while another injects into the induction system of the engine. A simplified regulating system is incorporated so that the first injector receives fuel under a higher pressure than the second injector.
摘要翻译：用于两个循环曲轴箱压缩内燃机的燃料喷射系统的两个实施例，其采用两个燃料喷射器。一个燃料喷射器注入燃烧室，而另一个燃料喷射器喷射到发动机的感应系统中。结合简化的调节系统使得第一喷射器在比第二喷射器更高的压力下接收燃料。

4. 发明申请

US20070158685A1 Transistor epitaxial wafer and transistor produced by using same 有权
标题翻译：晶体管外延片和使用晶体管制造的晶体管
公开(公告)号：US20070158685A1
公开(公告)日：2007-07-12
申请号：US11637112
申请日：2006-12-12
申请人： Yoshihiko Moriya
发明人： Yoshihiko Moriya
IPC分类号： H01L31/00
CPC分类号： H01L29/7371 , H01L29/0817 , H01L29/66242 , H01L29/66462 , H01L29/7787
摘要： A transistor epitaxial wafer having: a substrate; an n-type collector layer, a p-type base layer and an n-type emitter layer formed on the substrate in this order; and an n-type InGaAs non-alloy layer having an n-type InGaAs nonuniform composition layer formed on the n-type emitter layer and having an nonuniform indium (In) composition, and an n-type InGaAs uniform composition layer formed on the n-type InGaAs nonuniform composition layer and having a uniform indium (In) composition. The n-type InGaAs nonuniform composition layer has a first layer doped with Si and having a low indium (In) composition, and a second layer formed on the first layer, doped with an n-type dopant except Si, and having an indium (In) composition higher than the first layer.
摘要翻译：一种晶体管外延晶片，具有：基板; 依次形成在基板上的n型集电极层，p型基极层和n型发射极层; 以及在n型发射极层上形成具有不均匀的铟（In）组成的n型InGaAs不均匀组成层的n型InGaAs非合金层，以及在n型InGaAs非合金层上形成的n型InGaAs均匀组成层型InGaAs非均匀组成层，并具有均匀的铟（In）组成。 n型InGaAs非均匀组成层具有掺杂有Si并具有低铟（In）组成的第一层，以及形成在第一层上的第二层，掺杂有Si以外的n型掺杂剂，并且具有铟（ In）组成高于第一层。

5. 发明授权

US5732674A Engine control system 失效
标题翻译：发动机控制系统
公开(公告)号：US5732674A
公开(公告)日：1998-03-31
申请号：US645216
申请日：1996-05-13
申请人： Yu Motoyama , Michihisa Nakamura , Yoshihiko Moriya
发明人： Yu Motoyama , Michihisa Nakamura , Yoshihiko Moriya
IPC分类号： F02B17/00 , F02B23/10 , F02B25/16 , F02B61/02 , F02B75/02 , F02B75/12 , F02D41/30 , F02D41/34 , F02D41/40 , F02B33/04 , F02B3/04
CPC分类号： F02B61/02 , F02D41/3029 , F02D41/345 , F02B2075/025 , F02B2075/125 , F02D2400/04 , F02D41/402 , Y02T10/123 , Y02T10/44
摘要： An improved method of operating a direct cylinder-injected engine wherein adequate fuel and scavenging can be achieved at mid and high-mid range by injecting the fuel in two increments. Various control strategies are disclosed, and they all particularly lend themselves for use with two-cycle crankcase compression engines.
摘要翻译：一种改进的直接气缸喷射发动机的操作方法，其中通过以两个增量喷射燃料可以在中等和中等范围内实现足够的燃料和清除。公开了各种控制策略，它们都特别适用于双循环曲轴箱压缩发动机。

6. 发明授权

US5946908A Engine control and wall temperature sensor 失效
标题翻译：发动机控制和壁式温度传感器
公开(公告)号：US5946908A
公开(公告)日：1999-09-07
申请号：US782648
申请日：1997-01-14
申请人： Yu Motoyama , Yoshihiko Moriya
发明人： Yu Motoyama , Yoshihiko Moriya
IPC分类号： F01N13/00 , F02B27/06 , F02B61/02 , F02D9/04 , F02D13/02 , F02D41/14 , F02B27/02 , F01N3/00
CPC分类号： F02D13/0284 , F01N13/008 , F02B27/06 , F02B61/02 , F02D41/1446 , F02D9/04 , F01N2340/04 , F01N2590/04 , F02P5/1502 , Y02T10/146 , Y02T10/18
摘要： A number of embodiments of exhaust temperature sensors that cooperate with an exhaust control for maintaining optimum engine performance by controlling the exhaust temperature to maintain the desired pulse back effect on the exhaust system.
摘要翻译：排气温度传感器的许多实施例与排气控制协调，以通过控制排气温度来维持最佳发动机性能，以维持对排气系统的期望的脉冲反作用。

7. 发明授权

US5878702A Exhaust timing control device for two-cycle engine 失效
标题翻译：双循环发动机排气定时控制装置
公开(公告)号：US5878702A
公开(公告)日：1999-03-09
申请号：US387935
申请日：1989-08-01
申请人： Yuh Motoyama , Takafumi Fukuda , Yoshihiko Moriya
发明人： Yuh Motoyama , Takafumi Fukuda , Yoshihiko Moriya
IPC分类号： F01N13/00 , F01N99/00 , F02B25/20 , F02B27/06 , F02B75/02 , F02D9/04 , F02D13/02
CPC分类号： F02D13/0284 , F02B2075/025 , Y02T10/18
摘要： An exhaust port controlling arrangement for an internal combustion engine having both main and auxiliary exhaust ports. A main control valve cooperates with the main exhaust port for varying the timing at which the exhaust port opens in response to engine speed. An on/off auxiliary control valve is positioned in a passage leading from the auxiliary exhaust port for opening and closing the flow through the auxiliary exhaust passage in response to an engine condition. Means retard the opening of the main exhaust port upon opening of the auxiliary exhaust ports to improve the power and torque curves of the engine.
摘要翻译：一种用于具有主排气口和辅助排气口的内燃机的排气口控制装置。主控制阀与主排气口配合，以根据发动机转速来改变排气口打开的时间。开/关辅助控制阀位于从辅助排气口引出的通道中，用于响应于发动机状态打开和关闭通过辅助排气通道的流动。意味着在辅助排气口打开时延迟主排气口的打开，以提高发动机的功率和扭矩曲线。

8. 发明授权

US08264005B2 Compound semiconductor device including AIN layer of controlled skewness 有权
公开(公告)号：US08264005B2
公开(公告)日：2012-09-11
申请号：US12772661
申请日：2010-05-03
申请人： Kenji Imanishi , Toshihide Kikkawa , Takeshi Tanaka , Yoshihiko Moriya , Yohei Otoki
发明人： Kenji Imanishi , Toshihide Kikkawa , Takeshi Tanaka , Yoshihiko Moriya , Yohei Otoki
IPC分类号： H01L29/778 , H01L21/20
CPC分类号： H01L21/02581 , H01L21/02378 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/0262
摘要： A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.

9. 发明授权

US08044492B2 Compound semiconductor device including AIN layer of controlled skewness 有权
标题翻译：复合半导体器件包括受控偏移的AIN层
公开(公告)号：US08044492B2
公开(公告)日：2011-10-25
申请号：US12059693
申请日：2008-03-31
申请人： Kenji Imanishi , Toshihide Kikkawa , Takeshi Tanaka , Yoshihiko Moriya , Yohei Otoki
发明人： Kenji Imanishi , Toshihide Kikkawa , Takeshi Tanaka , Yoshihiko Moriya , Yohei Otoki
IPC分类号： H01L29/30 , H01L33/22
CPC分类号： H01L21/02581 , H01L21/02378 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/0262
摘要： A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.
摘要翻译：半导体外延基板包括：单晶基板; 在单晶衬底上外延生长的AlN层; 以及在所述AN层上外延生长的氮化物半导体层，其中，所述AlN层与所述氮化物半导体层之间的界面的粗糙度大于所述单晶衬底和AlN层之间的界面，并且所述AlN层的上表面的偏斜度是积极的。

10. 发明授权

US07948009B2 Nitride semiconductor epitaxial wafer and nitride semiconductor device 有权
标题翻译：氮化物半导体外延晶片和氮化物半导体器件
公开(公告)号：US07948009B2
公开(公告)日：2011-05-24
申请号：US12382481
申请日：2009-03-17
申请人： Yoshihiko Moriya , Takeshi Tanaka , Yohei Otoki , Masae Sahara
发明人： Yoshihiko Moriya , Takeshi Tanaka , Yohei Otoki , Masae Sahara
IPC分类号： H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336
CPC分类号： H01L29/2003 , H01L29/1075 , H01L29/7786
摘要： A nitride semiconductor epitaxial wafer includes a growth substrate including a surface for growing a nitride semiconductor thereon, a first structure layer formed on the growth substrate, a dislocation propagation direction changing layer formed on the first structure layer for changing a propagation direction of a dislocation propagated in the first structure layer into a lateral direction, a second structure layer formed on the dislocation propagation direction changing layer, and a buffer layer formed on the second structure layer for changing a propagation direction of a dislocation propagated in the second structure layer.
摘要翻译：氮化物半导体外延晶片包括生长衬底，其包括用于在其上生长氮化物半导体的表面，形成在生长衬底上的第一结构层，形成在第一结构层上的位错传播方向改变层，用于改变传播的位错的传播方向在第一结构层中形成横向，形成在位错传播方向改变层上的第二结构层，以及形成在第二结构层上的缓冲层，用于改变在第二结构层中传播的位错的传播方向。

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