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1. 发明授权

US6046529A Electronic component having structure for preventing separation at adhered portions 失效
标题翻译：具有防止粘附部分离的结构的电子部件
公开(公告)号：US6046529A
公开(公告)日：2000-04-04
申请号：US66728
申请日：1998-04-24
申请人： Ryuhei Yoshida , Daisaku Kugo , Masaya Wajima , Hiroyuki Takahashi , Satoshi Miura
发明人： Ryuhei Yoshida , Daisaku Kugo , Masaya Wajima , Hiroyuki Takahashi , Satoshi Miura
IPC分类号： H03H9/10 , H03H9/17 , H01L41/08
CPC分类号： H03H9/1035
摘要： An electronic component is constructed to prevent damage and stripping off or separation at adhered portions thereof even if the component is exposed to abrupt temperature changes to thereby provide a highly reliable component. A piezoelectric vibrating element defining a first substrate and an electronic component case including a pair of substrates which are second substrates are adhered together through an adhesive layer so as to define a closed space. The adhesive layer includes a fillet portion which is arranged to extend along lateral walls of the recess to edges of the closed space to prevent separation at adhesion interface surfaces of the substrates.
摘要翻译：构成电子部件，以防止其部件暴露于突然的温度变化时的损伤和剥离或分离，从而提供高度可靠的部件。限定第一基板的压电振动元件和包括作为第二基板的一对基板的电子部件壳体通过粘合剂层粘合在一起以限定封闭空间。粘合剂层包括圆角部分，该圆角部分布置成沿凹槽的侧壁延伸到封闭空间的边缘，以防止在基底的粘合界面处的分离。

2. 发明授权

US08462467B2 Thin film magnetic head including soft layer magnetically connected with shield 有权
标题翻译：薄膜磁头包括与屏蔽层磁性连接的软层
公开(公告)号：US08462467B2
公开(公告)日：2013-06-11
申请号：US12900879
申请日：2010-10-08
申请人： Takumi Yanagisawa , Yasushi Nishioka , Takahiko Machita , Satoshi Miura , Takayasu Kanaya , Kenzo Makino , Yoshikazu Sawada , Takekazu Yamane , Naomichi Degawa , Kosuke Tanaka , Soji Koide , Daisuke Miyauchi
发明人： Takumi Yanagisawa , Yasushi Nishioka , Takahiko Machita , Satoshi Miura , Takayasu Kanaya , Kenzo Makino , Yoshikazu Sawada , Takekazu Yamane , Naomichi Degawa , Kosuke Tanaka , Soji Koide , Daisuke Miyauchi
IPC分类号： G11B5/39
CPC分类号： G11B5/3912 , G01R33/098 , G11B5/3932 , H01F10/3254 , H01F10/3272 , H01L43/08
摘要： A thin film magnetic head includes: a magneto resistance effect film of which electrical resistance varies corresponding to an external magnetic field; a pair of shields provided on both sides in a manner of sandwiching the MR film in a direction that is orthogonal to a film surface of the MR film; an anisotropy providing layer that provides exchange anisotropy to a first shield of the pair of shields in order to magnetize the first shield in a desired direction, and that is disposed on the opposite side from the MR film with respect to the first shield; and side shields that are disposed on both sides of the MR film in a track width direction and that include soft magnetic layers magnetically connected with the first shield.
摘要翻译：薄膜磁头包括：电阻效应膜，其电阻根据外部磁场而变化; 一对屏蔽，以与MR膜的膜表面正交的方向夹持MR膜的方式设置在两侧; 各向异性提供层，其向所述一对屏蔽件的第一屏蔽提供交换各向异性，以便在所需方向上磁化所述第一屏蔽，并且相对于所述第一屏蔽设置在与所述MR膜相反的一侧上; 以及侧面屏蔽，其设置在MR膜的轨道宽度方向的两侧，并且包括与第一屏蔽件磁性连接的软磁性层。

3. 发明申请

US20120087045A1 THIN FILM MAGNETIC HEAD INCLUDING SPIN-VALVE FILM WITH FREE LAYER MAGNETICALLY CONNECTED WITH SHIELD 有权
标题翻译：薄膜磁头包括旋转阀膜，自由层磁性连接
公开(公告)号：US20120087045A1
公开(公告)日：2012-04-12
申请号：US12900845
申请日：2010-10-08
申请人： Takumi Yanagisawa , Yasushi Nishioka , Takahiko Machita , Satoshi Miura , Takayasu Kanaya , Kenzo Makino , Yoshikazu Sawada , Takekazu Yamane , Naomichi Degawa , Kosuke Tanaka , Soji Koide , Daisuke Miyauchi
发明人： Takumi Yanagisawa , Yasushi Nishioka , Takahiko Machita , Satoshi Miura , Takayasu Kanaya , Kenzo Makino , Yoshikazu Sawada , Takekazu Yamane , Naomichi Degawa , Kosuke Tanaka , Soji Koide , Daisuke Miyauchi
IPC分类号： G11B5/33 , G11B5/56 , G11B5/48
CPC分类号： G11B5/3912 , B82Y25/00 , G01R33/093 , H01F10/325 , H01F10/3254 , H01L43/08
摘要： A thin film magnetic head includes; an MR film that includes a pinned layer of which a magnetization direction is pinned, a free layer of which a magnetization direction varies, and a spacer that is disposed therebetween; a pair of shields that are disposed on both sides sandwiching the MR film in a direction orthogonal to a film surface of the MR film; and an anisotropy providing layer that provides anisotropy to a first shield so that the first shield is magnetized in a desired direction, and that is disposed on an opposite side from the MR film with respect to the first shield. The MR film includes a magnetic coupling layer that is disposed between the first shield and the free layer and that magnetically couples the first shield with the free layer.
摘要翻译：薄膜磁头包括：包括磁化方向被钉扎的钉扎层，磁化方向变化的自由层和设置在其间的间隔件的MR膜; 一对屏蔽，其设置在与MR膜的膜表面正交的方向上夹着MR膜的两侧; 以及各向异性提供层，其向第一屏蔽提供各向异性，使得第一屏蔽沿期望的方向被磁化，并且被设置在与MR膜相对于第一屏蔽的相对侧上。 MR膜包括设置在第一屏蔽和自由层之间并且将第一屏蔽与自由层磁耦合的磁耦合层。

4. 发明授权

US07934309B2 Methods of fabricating exchange-coupling film, magnetoresistive element, and thin-film magnetic head 有权
标题翻译：制造交换耦合膜，磁阻元件和薄膜磁头的方法
公开(公告)号：US07934309B2
公开(公告)日：2011-05-03
申请号：US12003453
申请日：2007-12-26
申请人： Keita Kawamori , Satoshi Miura
发明人： Keita Kawamori , Satoshi Miura
IPC分类号： G11B5/127
CPC分类号： C21D1/04 , B82Y25/00 , B82Y40/00 , C21D9/0068 , G01R33/093 , G11B5/3163 , G11B5/3906 , H01F10/3295 , H01F41/304 , Y10T29/49032 , Y10T29/49034 , Y10T29/49043
摘要： The method of fabricating an exchange-coupling film in accordance with the present invention comprises a multilayer body forming step of forming a multilayer body having an antiferromagnetic layer and a ferromagnetic layer laminated on the antiferromagnetic layer; and an annealing step of annealing the multilayer body in a magnetic field with a maximum temperature higher than a blocking temperature of the multilayer body by 15 to 60° C.
摘要翻译：根据本发明的制备交换耦合膜的方法包括：多层体形成步骤，其形成层叠在反铁磁层上的反铁磁层和铁磁层的多层体; 以及在多层体的最高温度高于多层体的阻挡温度15〜60℃的磁场中退火多层体的退火工序。

5. 发明授权

US07871238B2 Fuel pump 有权
标题翻译：燃油泵
公开(公告)号：US07871238B2
公开(公告)日：2011-01-18
申请号：US11737959
申请日：2007-04-20
申请人： Shigeru Yoshida , Satoshi Miura
发明人： Shigeru Yoshida , Satoshi Miura
IPC分类号： F04D29/44
CPC分类号： F02M37/048 , F04D5/005 , F04D5/006 , F04D29/445
摘要： A vapor lock in a fuel pump can be prevented by reducing the formation of vapor within the fuel. A first group of concavities may be formed in an inner circumferential region of an intake side face of an impeller, and a second group of concavities may be formed concentrically in a region outside of the first group of concavities. A third group of concavities that communicates with the second group of concavities may be formed in a discharge side face of the impeller. The impeller is housed within a casing. A first groove that faces the first group of concavities and a second groove that faces the second group of concavities may be formed in the face of the casing that faces the intake side face of the impeller. A third groove that faces the third group of concavities may be formed in the face of the casing that faces the discharge side face of the impeller.
摘要翻译：可以通过减少燃料内的蒸汽的形成来防止燃料泵中的蒸气锁。第一组凹部可以形成在叶轮的进气侧面的内周区域中，并且第二组凹部可以同心地形成在第一组凹部之外的区域中。可以在叶轮的排出侧面形成与第二组凹部连通的第三组凹部。叶轮容纳在外壳内。面对第一组凹部的第一凹槽和面向第二组凹部的第二凹槽可以形成在面向叶轮的进气侧面的壳体的表面中。面向第三组凹部的第三凹槽可以形成在面向叶轮的排出侧面的壳体的表面中。

6. 发明授权

US07573686B2 Thin-film magnetic head including low-resistance TMR element 有权
标题翻译：薄膜磁头包括低电阻TMR元件
公开(公告)号：US07573686B2
公开(公告)日：2009-08-11
申请号：US11474487
申请日：2006-06-26
申请人： Kei Hirata , Satoshi Miura , Naoki Ota
发明人： Kei Hirata , Satoshi Miura , Naoki Ota
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3906
摘要： An MR element comprises: a tunnel barrier layer having two surfaces facing toward opposite directions; a free layer disposed adjacent to one of the surfaces of the tunnel barrier layer and having a direction of magnetization that changes in response to a signal magnetic field; and a pinned layer disposed adjacent to the other of the surfaces of the tunnel barrier layer and having a fixed direction of magnetization. The tunnel barrier layer is made of a material containing an oxide semiconductor such as ZnO. The MR element has a resistance-area product that falls within a range of 0.3 to 2.0 Ω-μm2 inclusive.
摘要翻译： MR元件包括：具有面向相反方向的两个表面的隧道势垒层; 邻近所述隧道势垒层的一个表面并且具有响应于信号磁场而改变的磁化方向的自由层; 以及与隧道势垒层的另一个表面相邻并且具有固定的磁化方向的被钉扎层。隧道势垒层由含有ZnO等氧化物半导体的材料构成。 MR元件的电阻面积为0.3〜2.0Ωm2（含）的范围。

7. 发明申请

US20090174971A1 CPP-TYPE MAGNETO RESISTIVE EFFECT ELEMENT HAVING A PAIR OF MAGNETIC LAYERS 审中-公开
标题翻译：具有磁性层对的CPP型MAGNETO电阻效应元件
公开(公告)号：US20090174971A1
公开(公告)日：2009-07-09
申请号：US11968788
申请日：2008-01-03
申请人： Yoshihiro Tsuchiya , Shinji Hara , Tomohito Mizuno , Satoshi Miura , Takumi Yanagisawa
发明人： Yoshihiro Tsuchiya , Shinji Hara , Tomohito Mizuno , Satoshi Miura , Takumi Yanagisawa
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： H01L43/10 , B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B5/3929 , G11B2005/3996
摘要： A magnetoresistance effect element comprises: a pair of magnetic layers whose magnetization directions form a relative angle therebetween that is variable depending on an external magnetic field; and a crystalline spacer layer sandwiched between the pair of magnetic layers; wherein sense current may flow in a direction that is perpendicular to a film plane of the pair of magnetic layers and the spacer layer. The spacer layer includes a crystalline oxide, and either or both magnetic layers whose magnetization direction is variable depending on the external magnetic field has a layer configuration in which a CoFeB layer is sandwiched between a CoFe layer and a NiFe layer and is positioned between the spacer layer and the NiFe layer.
摘要翻译：磁阻效应元件包括：一对磁性层，其磁化方向形成其间的相对角度，其可根据外部磁场而变化; 以及夹在所述一对磁性层之间的结晶间隔层; 其中感测电流可以在垂直于一对磁性层和间隔层的膜平面的方向上流动。间隔层包括结晶氧化物，并且其磁化方向根据外部磁场而变化的任一个或两个磁性层具有其中CoFeB层夹在CoFe层和NiFe层之间并位于间隔物之间的层构造层和NiFe层。

8. 发明授权

US07372675B2 Magnetoresistive element, thin-film magnetic head, head gimbal assembly, head arm assembly and magnetic disk drive 有权
标题翻译：磁阻元件，薄膜磁头，头万向架组件，头臂组件和磁盘驱动器
公开(公告)号：US07372675B2
公开(公告)日：2008-05-13
申请号：US11253757
申请日：2005-10-20
申请人： Satoshi Miura , Takumi Uesugi , Norio Takahashi
发明人： Satoshi Miura , Takumi Uesugi , Norio Takahashi
IPC分类号： G11B5/39
CPC分类号： H01F10/3254 , B82Y10/00 , B82Y25/00 , G01R33/06 , G11B5/3903 , G11B5/3909 , H01F10/30 , H01F10/3272 , H01L43/08
摘要： An MR element comprises: a tunnel barrier layer having two surfaces that face toward opposite directions; a free layer disposed adjacent to one of the surfaces of the tunnel barrier layer and having a direction of magnetization that changes in response to an external magnetic field; and a pinned layer that is a ferromagnetic layer disposed adjacent to the other of the surfaces of the tunnel barrier layer and having a fixed direction of magnetization. The free layer incorporates: a first soft magnetic layer disposed adjacent to the one of the surfaces of the tunnel barrier layer; a high polarization layer disposed such that the first soft magnetic layer is sandwiched between the tunnel barrier layer and the high polarization layer; and a second soft magnetic layer disposed such that the high polarization layer is sandwiched between the first and second soft magnetic layers.
摘要翻译： MR元件包括：具有面向相反方向的两个表面的隧道势垒层; 邻近隧道势垒层的一个表面设置并具有响应于外部磁场而变化的磁化方向的自由层; 以及钉扎层，其是与隧道势垒层的另一个表面相邻设置并具有固定的磁化方向的铁磁层。自由层包括：邻近隧道势垒层的一个表面设置的第一软磁层; 设置为使得第一软磁层夹在隧道势垒层和高偏振层之间的高偏振层; 以及设置成使得高偏振层夹在第一和第二软磁性层之间的第二软磁层。

9. 发明申请

US20080037184A1 Exchange-coupling film incorporating stacked antiferromagnetic layer and pinned layer, and magnetoresistive element including the exchange-coupling film 有权
标题翻译：包含堆叠反铁磁层和被钉扎层的交换耦合膜，以及包括交换耦合膜的磁阻元件
公开(公告)号：US20080037184A1
公开(公告)日：2008-02-14
申请号：US11806823
申请日：2007-06-04
申请人： Takumi Uesugi , Satoshi Miura
发明人： Takumi Uesugi , Satoshi Miura
IPC分类号： G11B5/127
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3906 , H01F10/16 , H01F10/3272 , H01L43/08
摘要： An exchange-coupling film incorporates an antiferromagnetic layer and a pinned layer. The pinned layer includes a first ferromagnetic layer, a second ferromagnetic layer, a third ferromagnetic layer, a nonmagnetic middle layer, and a fourth ferromagnetic layer that are disposed in this order, the first ferromagnetic layer being closest to the antiferromagnetic layer. The first ferromagnetic layer is made of a ferromagnetic material and has a face-centered cubic structure. The second ferromagnetic layer is made of only iron or an alloy containing x atomic % cobalt and (100−x) atomic % iron, wherein x is greater than zero and smaller than or equal to 60. The third ferromagnetic layer is made of an alloy containing y atomic % cobalt and (100−y) atomic % iron, wherein y is within a range of 65 to 80 inclusive. The antiferromagnetic layer and the first ferromagnetic layer are exchange-coupled to each other. The third and fourth ferromagnetic layers are antiferromagnetically coupled to each other.
摘要翻译：交换耦合膜包含反铁磁层和钉扎层。被钉扎层包括第一铁磁层，第二铁磁层，第三铁磁层，非磁性中间层和第四铁磁层，第一铁磁层最靠近反铁磁层。第一铁磁层由铁磁材料制成并具有面心立方结构。第二铁磁层仅由铁或含有x原子％钴和（100-x）原子％铁的合金制成，其中x大于零且小于或等于60.第三铁磁层由合金含有原子％钴和（100-y）原子％铁，其中y在65〜80的范围内。反铁磁层和第一铁磁层彼此交换耦合。第三和第四铁磁层彼此反铁磁耦合。

10. 发明授权

US07241514B2 Magneto-resistive device, and magnetic head, head suspension assembly and magnetic disk apparatus using magneto-resistive device 有权
标题翻译：磁阻装置，磁头，磁头悬挂装置和使用磁阻装置的磁盘装置
公开(公告)号：US07241514B2
公开(公告)日：2007-07-10
申请号：US10880574
申请日：2004-07-01
申请人： Takeo Kagami , Takumi Uesugi , Satoshi Miura , Norio Takahashi
发明人： Takeo Kagami , Takumi Uesugi , Satoshi Miura , Norio Takahashi
IPC分类号： G11B5/39 , G11B5/27
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3906 , G11B5/3909 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143 , Y10T428/1164 , Y10T428/256
摘要： A magneto-resistive device is provided for contributing to a higher MR ratio and a reduced cleaning time for cleaning the surface of a cap layer. In the magneto-resistive device, a cap layer which serves as a protection layer is formed on a free layer which is the topmost layer of a magneto-resistive layer constituting a TMR devise. An upper electrode which is additionally used as an upper magnetic shield is electrically connected to the free layer through an upper metal layer. The cap layer comprised of a two-layer film made up of a conductive layer closer to the free layer and a topmost conductive layer. The conductive layer closer to the free layer is made of a material having higher oxygen bond energy than Ru, such as Zr, Hf, or the like. The topmost conductive layer is made of a material having lower oxygen bond energy, such as a noble metal or the like.
摘要翻译：提供了一种磁阻装置，用于有助于更高的MR比和减少的清洁时间以清洁盖层的表面。在磁阻装置中，作为保护层的盖层形成在作为构成TMR装置的磁阻层的最上层的自由层上。另外用作上磁屏蔽的上电极通过上金属层电连接到自由层。盖层由由更靠近自由层的导电层构成的双层膜和最上面的导电层组成。更靠近自由层的导电层由诸如Zr，Hf等的比Ru更高的氧键能的材料制成。最上面的导电层由具有较低氧键能的材料制成，例如贵金属等。

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