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1. 发明授权

US5179427A Non-volatile semiconductor memory device with voltage stabilizing electrode 失效
标题翻译：具有稳压电极的非易失性半导体存储器件
公开(公告)号：US5179427A
公开(公告)日：1993-01-12
申请号：US869123
申请日：1992-04-15
申请人： Ryozo Nakayama , Riichiro Shirota , Yasuo Itoh , Ryouhei Kirisawa , Hideko Odaira , Masaki Momodomi , Yoshihisa Iwata , Tomoharu Tanaka , Seiichi Aritome , Tetsuo Endoh , Fujio Masuoka
发明人： Ryozo Nakayama , Riichiro Shirota , Yasuo Itoh , Ryouhei Kirisawa , Hideko Odaira , Masaki Momodomi , Yoshihisa Iwata , Tomoharu Tanaka , Seiichi Aritome , Tetsuo Endoh , Fujio Masuoka
IPC分类号： G11C16/04 , H01L27/115
CPC分类号： H01L27/115 , G11C16/0483
摘要： A NAND cell type EEPROM has parallel data transmission lines formed above a substrate, and a memory cell section including a plurality of NAND type cell units containing a NAND type cell unit that is associated with a certain bit line of the bit lines. This NAND type cell unit has a series-circuit of a preselected number of data storage transistors with control gates, and a selection transistor. A substrate voltage-stabilizing layer is insulatively provided above the substrate and positioned in the field area in adjacent to the certain bit line. The conductive layer is connected to the substrate by a contact portion so that the substrate voltage can be constantly set to a preselected voltage potential of a fixed value during the NAND type cell unit is being subjected to the write and erase modes.
摘要翻译： NAND单元型EEPROM具有形成在衬底上的并行数据传输线，以及存储单元部分，其包括与位线的某个位线相关联的NAND型单元单元的多个NAND型单元单元。该NAND型单元单元具有预选数量的具有控制栅极的数据存储晶体管和选择晶体管的串联电路。衬底电压稳定层被绝缘地设置在衬底之上并且位于与某一位线相邻的场区中。导电层通过接触部分连接到基板，使得在对NAND型单元单元进行写入和擦除模式期间，基板电压可以恒定地设定为固定值的预选电压电位。

2. 发明授权

US5597748A Method of manufacturing NAND type EEPROM 失效
标题翻译：制造NAND型EEPROM的方法
公开(公告)号：US5597748A
公开(公告)日：1997-01-28
申请号：US247589
申请日：1994-05-23
申请人： Masamichi Asano , Hiroshi Iwahashi , Ryouhei Kirisawa , Ryozo Nakayama , Satoshi Inoue , Riichiro Shirota , Tetsuo Endoh , Fujio Masuoka
发明人： Masamichi Asano , Hiroshi Iwahashi , Ryouhei Kirisawa , Ryozo Nakayama , Satoshi Inoue , Riichiro Shirota , Tetsuo Endoh , Fujio Masuoka
IPC分类号： G11C16/04 , H01L21/8247 , H01L27/115 , H01L29/788
CPC分类号： H01L27/11519 , G11C16/0483 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/7883 , H01L29/7885
摘要： The present invention relates to a non-volatile semiconductor memory having non-volatile memory cells capable of electrically erasing and writing data. Each memory cell has a floating gate formed on the surface of the semiconductor substrate above the channel region, and a control gate. The floating gate partially covers the channel region. Each memory cell is thereby constructed of a parallel connection of a floating gate transistor and an enhancement type transistor. The floating gate transistor is displaced in one of the widthwise directions of the channel region, or partially covers only the central portion of the channel region in the widthwise direction thereof. A plurality of memory cells are connected in series to constitute a basic block. Adjacent basic blocks are separated by an enhancement type MOS transistor. In this memory, a memory cell (floating gate) and an enhancement type MOS transistor (gate) are formed in self alignment with each other using the same mask. In addition, in this memory, a control gate and a floating gate are formed in self alignment with each other using the same mask.
摘要翻译：本发明涉及具有能够电擦除和写入数据的非易失性存储单元的非易失性半导体存储器。每个存储单元具有形成在沟道区域上方的半导体衬底的表面上的浮置栅极和控制栅极。浮动栅极部分地覆盖沟道区域。因此，每个存储单元由浮栅晶体管和增强型晶体管的并联连接构成。浮栅晶体管在沟道区域的宽度方向中的一个方向上位移，或部分仅覆盖沟道区域的宽度方向的中心部分。多个存储单元串联连接以构成基本块。相邻的基本块由增强型MOS晶体管分开。在该存储器中，使用相同的掩模，以彼此对准的方式形成存储单元（浮置栅极）和增强型MOS晶体管（栅极）。此外，在该存储器中，使用相同的掩模，以彼此对准的方式形成控制栅极和浮动栅极。

3. 发明授权

US5824583A Non-volatile semiconductor memory and method of manufacturing the same 失效
标题翻译：非易失性半导体存储器及其制造方法
公开(公告)号：US5824583A
公开(公告)日：1998-10-20
申请号：US949819
申请日：1997-10-14
申请人： Masamichi Asano , Hiroshi Iwahashi , Ryouhei Kirisawa , Ryozo Nakayama , Satoshi Inoue , Riichiro Shirota , Tetsuo Endoh , Fujio Masuoka
发明人： Masamichi Asano , Hiroshi Iwahashi , Ryouhei Kirisawa , Ryozo Nakayama , Satoshi Inoue , Riichiro Shirota , Tetsuo Endoh , Fujio Masuoka
IPC分类号： G11C16/04 , H01L21/8247 , H01L27/115 , H01L29/788
CPC分类号： H01L27/11519 , G11C16/0483 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/7883 , H01L29/7885
摘要： The present invention relates to a non-volatile semiconductor memory having non-volatile memory cells capable of electrically erasing and writing data. Each memory cell has a floating gate formed on the surface of the semiconductor substrate above the channel region, and a control gate. The floating gate partially covers the channel region. Each memory cell is thereby constructed of a parallel connection of a floating gate transistor and an enhancement type transistor. The floating gate transistor is displaced in one of the widthwise directions of the channel region, or partially covers only the central portion of the channel region in the widthwise direction thereof. A plurality of memory cells are connected in series to constitute a basic block. Adjacent basic blocks are separated by an enhancement type MOS transistor. In this memory, a memory cell (floating gate) and an enhancement type MOS transistor (gate) are formed in self alignment with each other using the same mask. In addition, in this memory, a control gate and a floating gate are formed in self alignment with each other using the same mask.
摘要翻译：本发明涉及具有能够电擦除和写入数据的非易失性存储单元的非易失性半导体存储器。每个存储单元具有形成在沟道区域上方的半导体衬底的表面上的浮置栅极和控制栅极。浮动栅极部分地覆盖沟道区域。因此，每个存储单元由浮栅晶体管和增强型晶体管的并联连接构成。浮栅晶体管在沟道区域的宽度方向中的一个方向上位移，或部分仅覆盖沟道区域的宽度方向的中心部分。多个存储单元串联连接以构成基本块。相邻的基本块由增强型MOS晶体管分开。在该存储器中，使用相同的掩模，以彼此对准的方式形成存储单元（浮置栅极）和增强型MOS晶体管（栅极）。此外，在该存储器中，使用相同的掩模，以彼此对准的方式形成控制栅极和浮动栅极。

4. 发明授权

US5323039A Non-volatile semiconductor memory and method of manufacturing the same 失效
标题翻译：非易失性半导体存储器及其制造方法
公开(公告)号：US5323039A
公开(公告)日：1994-06-21
申请号：US499342
申请日：1990-06-21
申请人： Masamichi Asano , Hiroshi Iwahashi , Ryouhei Kirisawa , Ryozo Nakayama , Satoshi Inoue , Riichiro Shirota , Tetsuo Endoh , Fujio Masuoka
发明人： Masamichi Asano , Hiroshi Iwahashi , Ryouhei Kirisawa , Ryozo Nakayama , Satoshi Inoue , Riichiro Shirota , Tetsuo Endoh , Fujio Masuoka
IPC分类号： G11C16/04 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/68
CPC分类号： H01L27/11519 , G11C16/0483 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/7883 , H01L29/7885
摘要： The present invention relates to a non-volatile semiconductor memory having non-volatile memory cells capable of electrically erasing and writing data. Each memory cell has a floating gate formed on the surface of the semiconductor substrate above the channel region, and a control gate. The floating gate partially covers the channel region. Each memory cell is thereby constructed of a parallel connection of a floating gate transistor and an enhancement type transistor. The floating gate transistor is displaced in one of the widthwise directions of the channel region, or partially covers only the central portion of the channel region in the widthwise direction thereof. A plurality of memory cells are connected in series to constitute a basic block. Adjacent basic blocks are separated by an enhancement type MOS transistor. In this memory, a memory cell (floating gate) and an enhancement type MOS transistor (gate) are formed in self alignment with each other using the same mask. In addition, in this memory, a control gate and a floating gate are formed in self alignment with each other using the same mask.
摘要翻译： PCT No.PCT / JP89 / 00942 Sec。 371 1990年6月21日第 102（e）日期1990年6月21日PCT提交1989年9月14日PCT公布。公开号WO90 / 04855 日期为1990年5月3日。本发明涉及具有能够电擦除和写入数据的非易失性存储单元的非易失性半导体存储器。每个存储单元具有形成在沟道区域上方的半导体衬底的表面上的浮置栅极和控制栅极。浮动栅极部分地覆盖沟道区域。因此，每个存储单元由浮栅晶体管和增强型晶体管的并联连接构成。浮栅晶体管在沟道区域的宽度方向中的一个方向上位移，或部分仅覆盖沟道区域的宽度方向的中心部分。多个存储单元串联连接以构成基本块。相邻的基本块由增强型MOS晶体管分开。在该存储器中，使用相同的掩模，以彼此对准的方式形成存储单元（浮置栅极）和增强型MOS晶体管（栅极）。此外，在该存储器中，使用相同的掩模，以彼此对准的方式形成控制栅极和浮动栅极。

5. 发明授权

US5321699A Electrically erasable and programmable non-volatile memory system with write-verify controller using two reference levels 失效
标题翻译：具有写入验证控制器的电可擦除和可编程非易失性存储器系统，使用两个参考电平
公开(公告)号：US5321699A
公开(公告)日：1994-06-14
申请号：US851286
申请日：1992-03-12
申请人： Tetsuo Endoh , Riichiro Shirota , Kazunori Ohuchi , Ryouhei Kirisawa , Seiichi Aritome , Tomoharu Tanaka , Yoshiyuki Tanaka
发明人： Tetsuo Endoh , Riichiro Shirota , Kazunori Ohuchi , Ryouhei Kirisawa , Seiichi Aritome , Tomoharu Tanaka , Yoshiyuki Tanaka
IPC分类号： G11C11/56 , G11C16/34 , G11C29/50 , G01R31/28
CPC分类号： G11C16/0483 , G11C11/5621 , G11C11/5628 , G11C11/5635 , G11C11/5642 , G11C16/3404 , G11C16/3413 , G11C16/3418 , G11C16/3431 , G11C16/3459 , G11C29/50 , G06F2201/81 , G11C16/04 , G11C2029/0403 , G11C2211/5621
摘要： An EEPROM includes an array of memory cell transistors, which is divided into cell blocks each including NAND cell units of series-connected cell transistors. A sense amplifier is connected to bit lines and a comparator. A data-latch circuit is connected to the comparator, for latching a write-data supplied from a data input buffer. After desired cell transistors selected for programming in a selected block are once programmed, a write-verify operation is performed. The comparator compares the actual data read from one of the programmed cell transistors with the write-data, to verify its written state. The write-verify process checks the resulting threshold voltage for variations using first and second reference voltages defining the lower-limit and upper-limit of an allowable variation range. If the comparison results under employment of the first voltage shows that an irregularly written cell transistor remains with an insufficient threshold voltage which is so low as to fail to fall within the range, the write operation continues for the same cell transistor. If the comparison results under employment of the second voltage shows that an excess-written cell transistor remains, the block is rendered "protected" at least partially.
摘要翻译： EEPROM包括存储单元晶体管的阵列，其被分成每个包括串联连接的单元晶体管的NAND单元单元的单元块。读出放大器连接到位线和比较器。数据锁存电路连接到比较器，用于锁存从数据输入缓冲器提供的写入数据。在所选择的块中选择用于编程的所需单元晶体管被一次编程之后，执行写验证操作。比较器将从编程单元晶体管之一读取的实际数据与写入数据进行比较，以验证其写入状态。写验证过程使用限定允许变化范围的下限和上限的第一和第二参考电压来检查所得到的阈值电压的变化。如果使用第一电压的比较结果表明，不规则写入的单元晶体管保持不足阈值电压，其不足以落在该范围内，对于相同的单元晶体管，写操作继续进行。如果在使用第二电压的情况下的比较结果表明剩余写入过多的单元晶体管，则该块至少部分地被“保护”。

6. 发明授权

US5602789A Electrically erasable and programmable non-volatile and multi-level memory systemn with write-verify controller 失效
标题翻译：具有写入验证控制器的电可擦除和可编程的非易失性和多级存储器系统
公开(公告)号：US5602789A
公开(公告)日：1997-02-11
申请号：US518024
申请日：1995-08-22
申请人： Tetsuo Endoh , Riichiro Shirota , Kazunori Ohuchi , Ryouhei Kirisawa , Seiichi Aritome , Tomoharu Tanaka , Yoshiyuki Tanaka
发明人： Tetsuo Endoh , Riichiro Shirota , Kazunori Ohuchi , Ryouhei Kirisawa , Seiichi Aritome , Tomoharu Tanaka , Yoshiyuki Tanaka
IPC分类号： G11C11/56 , G11C16/34 , G11C29/50 , G01R31/28
CPC分类号： G11C16/3418 , G11C11/5621 , G11C11/5628 , G11C11/5635 , G11C11/5642 , G11C16/0483 , G11C16/3404 , G11C16/3413 , G11C16/3431 , G11C16/3459 , G11C29/50 , G06F2201/81 , G11C16/04 , G11C2029/0403 , G11C2211/5621
摘要： An EEPROM for storing multi-level data includes a memory cell array in which electrically erasable and programmable memory cells are arranged in matrix and each of the memory cells has at least three storage states, a write circuit for writing data to the memory cells, first and second write verify means each constituted of a sense amplifier, a data latch circuit and a detection circuit, for verifying an insufficient-written state of a memory cell and an excess-written state of a memory cell, respectively, an additional write circuit for additionally writing data to the memory cell in the insufficient-written state, and an additional erase circuit for additionally erasing data from the memory cell in the excess-written state.
摘要翻译：用于存储多级数据的EEPROM包括存储单元阵列，其中电可擦除可编程存储器单元被排列成矩阵，并且每个存储单元具有至少三个存储状态，第一存储单元写入数据的写入电路以及分别由读出放大器，数据锁存电路和检测电路构成的第二写入验证装置，用于分别验证存储器单元的写入不足状态和存储单元的过量写入状态，附加写入电路在写入状态不足的情况下向存储器单元写入数据，以及附加擦除电路，用于在超量写入状态下从存储单元附加擦除数据。

7. 发明授权

US5469444A Electrically erasable and programmable non-volatile memory system with write-verify controller using two reference levels 失效
标题翻译：具有写入验证控制器的电可擦除和可编程非易失性存储器系统，使用两个参考电平
公开(公告)号：US5469444A
公开(公告)日：1995-11-21
申请号：US341955
申请日：1994-11-16
申请人： Tetsuo Endoh , Riichiro Shirota , Kazunori Ohuchi , Ryouhei Kirisawa , Seiichi Aritome , Tomoharu Tanaka , Yoshiyuki Tanaka
发明人： Tetsuo Endoh , Riichiro Shirota , Kazunori Ohuchi , Ryouhei Kirisawa , Seiichi Aritome , Tomoharu Tanaka , Yoshiyuki Tanaka
IPC分类号： G11C11/56 , G11C16/34 , G11C29/50 , G01R31/28
CPC分类号： G11C16/0483 , G11C11/5621 , G11C11/5628 , G11C11/5635 , G11C11/5642 , G11C16/3404 , G11C16/3413 , G11C16/3418 , G11C16/3431 , G11C16/3459 , G11C29/50 , G06F2201/81 , G11C16/04 , G11C2029/0403 , G11C2211/5621
摘要： An EEPROM includes an array of memory cell transistors, which is divided into cell blocks each including NAND cell units of series-connected cell transistors. A sense amplifier is connected to bit lines and a comparator. A data-latch circuit is connected to the comparator, for latching a write-data supplied from a data input buffer. After desired cell transistors selected for programming in a selected block are once programmed, a write-verify operation is performed. The comparator compares the actual data read from one of the programmed cell transistors with the write-data, to verify its written state. The write-verify process checks the resulting threshold voltage for variations using first and second reference voltages defining the lower-limit and upper-limit of an allowable variation range. If the comparison results under employment of the first voltage shows that an irregularly written cell transistor remains with an insufficient threshold voltage which is so low as to fail to fall within the range, the write operation continues for the same cell transistor. If the comparison results under employment of the second voltage shows that an excess-written cell transistor remains, the block is rendered "protected" at least partially.
摘要翻译： EEPROM包括存储单元晶体管的阵列，其被分成每个包括串联连接的单元晶体管的NAND单元单元的单元块。读出放大器连接到位线和比较器。数据锁存电路连接到比较器，用于锁存从数据输入缓冲器提供的写入数据。在所选择的块中选择用于编程的所需单元晶体管被一次编程之后，执行写验证操作。比较器将从编程单元晶体管之一读取的实际数据与写入数据进行比较，以验证其写入状态。写验证过程使用限定允许变化范围的下限和上限的第一和第二参考电压来检查所得到的阈值电压的变化。如果使用第一电压的比较结果表明，不规则写入的单元晶体管保持不足阈值电压，其不足以落在该范围内，对于相同的单元晶体管，写操作继续进行。如果在使用第二电压的情况下的比较结果表明剩余写入过多的单元晶体管，则该块至少部分地被“保护”。

8. 发明授权

US5386422A Electrically erasable and programmable non-volatile memory system with write-verify controller using two reference levels 失效
公开(公告)号：US5386422A
公开(公告)日：1995-01-31
申请号：US229761
申请日：1994-04-19
申请人： Tetsuo Endoh , Riichiro Shirota , Kazunori Ohuchi , Ryouhei Kirisawa , Seiichi Aritome , Tomoharu Tanaka , Yoshiyuki Tanaka
发明人： Tetsuo Endoh , Riichiro Shirota , Kazunori Ohuchi , Ryouhei Kirisawa , Seiichi Aritome , Tomoharu Tanaka , Yoshiyuki Tanaka
IPC分类号： G11C11/56 , G11C16/34 , G11C29/50 , G01R31/28
CPC分类号： G11C16/0483 , G11C11/5621 , G11C11/5628 , G11C11/5635 , G11C11/5642 , G11C16/3404 , G11C16/3413 , G11C16/3418 , G11C16/3431 , G11C16/3459 , G11C29/50 , G06F2201/81 , G11C16/04 , G11C2029/0403 , G11C2211/5621
摘要： An EEPROM includes an array of memory cell transistors, which is divided into cell blocks each including NAND cell units of series-connected cell transistors. A sense amplifier is connected to bit lines and a comparator. A data-latch circuit is connected to the comparator, for latching a write-data supplied from a data input buffer. After desired cell transistors selected for programming in a selected block are once programmed, a write-verify operation is performed. The comparator compares the actual data read from one of the programmed cell transistors with the write-data, to verify its written state. The write-verify process checks the resulting threshold voltage for variations using first and second reference voltages defining the lower-limit and upper-limit of an allowable variation range. If the comparison results under employment of the first voltage shows that an irregularly written cell transistor remains with an insufficient threshold voltage which is so low as to fail to fall within the range, the write operation continues for the same cell transistor. If the comparison results under employment of the second voltage shows that an excess-written cell transistor remains, the block is rendered "protected" at least partially.

9. 发明授权

US4996669A Electrically erasable programmable read-only memory with NAND memory cell structure 失效
标题翻译：具有NAND存储单元结构的电可擦除可编程只读存储器
公开(公告)号：US4996669A
公开(公告)日：1991-02-26
申请号：US489967
申请日：1990-03-07
申请人： Tetsuo Endoh , Riichiro Shirota , Masaki Momodomi , Tomoharu Tanaka , Fujio Masuoka , Shigeyoshi Watanabe
发明人： Tetsuo Endoh , Riichiro Shirota , Masaki Momodomi , Tomoharu Tanaka , Fujio Masuoka , Shigeyoshi Watanabe
IPC分类号： G11C16/04
CPC分类号： G11C16/0483
摘要： An electrically erasable programmable read-only memory with a NAND cell structure has parallel bit lines, and memory cells defining NAND cell blocks, each of which has a series-circuit of memory cell transistors. Each transistor has a floating gate and a control gate. Parallel word lines are connected to the control gates of the cell transistors. The first, second and third intermediate voltages are used in the data write mode: the first voltage is lower than the "H" level voltage and higher than the "L" level voltage; the second and third voltages are higher than the first voltage and lower than the "H" level voltage. Data is written into a selected memory cell transistor of a NAND cell block, by applying the "H" level voltage to a word line connected to the selected transistor, applying the second voltage to the remaining unselected word lines, applying a corresponding bit line associated with the selected transistor with one of the first and third voltages which is selected in accordance with a logic level of the data, and applying unselected bit lines with the third voltage, whereby carriers are moved by tunneling from or to the floating gate of the selected memory cell transistor.
摘要翻译：具有NAND单元结构的电可擦除可编程只读存储器具有并行位线，以及限定NAND单元块的存储器单元，每个存储单元具有存储单元晶体管的串联电路。每个晶体管都有一个浮动栅极和一个控制栅极。并行字线连接到单元晶体管的控制栅极。在数据写入模式下使用第一，第二和第三中间电压：第一电压低于“H”电平电压并高于“L”电平电压; 第二和第三电压高于第一电压并低于“H”电平电压。将数据写入NAND单元块的选定的存储单元晶体管中，通过将“H”电平电压施加到连接到所选晶体管的字线，将第二电压施加到剩余的未选字线，施加相应的位线其中所选择的晶体管具有根据数据的逻辑电平选择的第一和第三电压中的一个，以及施加具有第三电压的未选择的位线，由此通过隧道从所选择的浮动栅极或者所选择的浮动栅极存储单元晶体管。

10. 发明授权

US5088060A Electrically erasable programmable read-only memory with NAND memory cell structure 失效
标题翻译：具有NAND存储单元结构的电可擦除可编程只读存储器
公开(公告)号：US5088060A
公开(公告)日：1992-02-11
申请号：US634325
申请日：1990-12-26
申请人： Tetsuo Endoh , Riichiro Shirota , Masaki Momodomi , Tomoharu Tanaka , Fujio Masuoka , Shigeyoshi Watanabe
发明人： Tetsuo Endoh , Riichiro Shirota , Masaki Momodomi , Tomoharu Tanaka , Fujio Masuoka , Shigeyoshi Watanabe
IPC分类号： G11C16/04
CPC分类号： G11C16/0483
摘要： An electrically erasable programmable read-only memory with a NAND cell structure has parallel bit lines, and memory cells defining NAND cell blocks, each of which has a series-circuit of memory cell transistors. Each transistor has a floating gate and a control gate. Parallel word lines are connected to the control gates of the cell transistors. The first, second and third intermediate voltages are used in the data write mode: the first voltage is lower than the "H" level voltage and higher than the "L" level voltage; the second and third voltages are higher than the first voltage and lower than the "H" level voltage. Data is written into a selected memory cell transistor of a NAND cell block, by applying the "H" level voltage to a word line connected to the selected transistor, applying the second voltage to the remaining unselected word lines, applying a corresponding bit line associated with the selected transistor with one of the first and third voltages which is selected in accordance with a logic level of the data, and applying unselected bit lines with the third voltage, whereby carriers are moved by tunneling from or to the floating gate of the selected memory cell transistor.
摘要翻译：具有NAND单元结构的电可擦除可编程只读存储器具有并行位线，以及限定NAND单元块的存储器单元，每个存储单元具有存储单元晶体管的串联电路。每个晶体管都有一个浮动栅极和一个控制栅极。并行字线连接到单元晶体管的控制栅极。在数据写入模式下使用第一，第二和第三中间电压：第一电压低于“H”电平电压并高于“L”电平电压; 第二和第三电压高于第一电压并低于“H”电平电压。将数据写入NAND单元块的选定的存储单元晶体管中，通过将“H”电平电压施加到连接到所选晶体管的字线，将第二电压施加到剩余的未选字线，施加相应的位线其中所选择的晶体管具有根据数据的逻辑电平选择的第一和第三电压中的一个，以及施加具有第三电压的未选择的位线，由此通过隧道从所选择的浮动栅极或者所选择的浮动栅极存储单元晶体管。

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