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1. 发明授权

US08318588B2 Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate 有权
标题翻译：半导体基板的再加工方法，再加工半导体基板的制造方法以及SOI基板的制造方法
公开(公告)号：US08318588B2
公开(公告)日：2012-11-27
申请号：US12859547
申请日：2010-08-19
申请人： Ryota Imahayashi , Hideto Ohnuma
发明人： Ryota Imahayashi , Hideto Ohnuma
IPC分类号： H01L21/46 , H01L21/36
CPC分类号： H01L21/76254 , H01L21/02024 , H01L21/02032 , H01L21/02052 , H01L21/0206 , H01L21/30604 , H01L21/3221
摘要： It is an object of the invention is to provide a method suitable for reprocessing a semiconductor substrate having favorable planarity. Another object of the invention is to manufacture a reprocessed semiconductor substrate by using the method suitable for reprocessing a semiconductor substrate having favorable planarity, and to manufacture an SOI substrate by using the reprocessed semiconductor substrate. A projecting portion of a semiconductor substrate is removed using a method capable of selectively removing a semiconductor region which is damaged by ion irradiation or the like. Further, an oxide film is formed on a surface of the semiconductor substrate when the semiconductor substrate is planarized by a polishing treatment typified by a CMP method, whereby the semiconductor substrate is evenly polished at a uniform rate. Moreover, a reprocessed semiconductor substrate is manufactured using the aforementioned method, and an SOI substrate is manufactured using the reprocessed semiconductor substrate.
摘要翻译：本发明的目的是提供一种适于对具有良好平坦度的半导体衬底进行再加工的方法。本发明的另一个目的是通过使用适合于对具有良好平面性的半导体衬底进行再处理的方法来制造再处理的半导体衬底，以及通过使用再处理的半导体衬底来制造SOI衬底。使用能够选择性地去除由离子照射等损坏的半导体区域的方法来去除半导体衬底的突出部分。此外，当通过以CMP方法为代表的抛光处理使半导体衬底平坦化时，在半导体衬底的表面上形成氧化物膜，由此以均匀的速率均匀地抛光半导体衬底。此外，使用上述方法制造再处理的半导体衬底，并且使用再处理的半导体衬底制造SOI衬底。

2. 发明授权

US07727846B2 Method of manufacturing an SOI substrate and method of manufacturing a semiconductor device 失效
标题翻译：制造SOI衬底的方法和制造半导体器件的方法
公开(公告)号：US07727846B2
公开(公告)日：2010-06-01
申请号：US12213137
申请日：2008-06-16
申请人： Hideto Ohnuma , Ryota Imahayashi , Yoichi Iikubo , Kenichiro Makino , Sho Nagamatsu
发明人： Hideto Ohnuma , Ryota Imahayashi , Yoichi Iikubo , Kenichiro Makino , Sho Nagamatsu
IPC分类号： H01L21/331 , H01L21/8222
CPC分类号： H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L29/78654
摘要： It is an object of the present invention is to provide a method of manufacturing an SOI substrate provided with a single-crystal semiconductor layer which can be practically used even when a substrate having a low heat-resistant temperature, such as a glass substrate or the like, is used, and further, to manufacture a semiconductor device with high reliability by using such an SOI substrate. A semiconductor layer which is separated from a semiconductor substrate and bonded to a supporting substrate having an insulating surface is irradiated with electromagnetic waves, and the surface of the semiconductor layer is subjected to polishing treatment. At least part of a region of the semiconductor layer is melted by irradiation with electromagnetic waves, and a crystal defect in the semiconductor layer can be reduced. Further, the surface of the semiconductor layer can be polished and planarized by polishing treatment.
摘要翻译：本发明的一个目的是提供一种制造具有单晶半导体层的SOI衬底的方法，即使当具有低耐热温度的衬底如玻璃衬底或并且进一步通过使用这种SOI衬底制造具有高可靠性的半导体器件。将与半导体基板分离并与具有绝缘面的支撑基板接合的半导体层用电磁波照射，对半导体层的表面进行抛光处理。半导体层的区域的至少一部分通过电磁波的照射而熔融，能够降低半导体层的晶体缺陷。此外，半导体层的表面可以通过抛光处理被抛光和平坦化。

3. 发明申请

US20090004878A1 Method of manufacturing an SOI substrate and method of manufacturing a semiconductor device 失效
标题翻译：制造SOI衬底的方法和制造半导体器件的方法
公开(公告)号：US20090004878A1
公开(公告)日：2009-01-01
申请号：US12213137
申请日：2008-06-16
申请人： Hideto Ohnuma , Ryota Imahayashi , Yoichi Ilkubo , Kenichiro Makino , Sho Nagamatsu
发明人： Hideto Ohnuma , Ryota Imahayashi , Yoichi Ilkubo , Kenichiro Makino , Sho Nagamatsu
IPC分类号： H01L21/31
CPC分类号： H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L29/78654
摘要： It is an object of the present invention is to provide a method of manufacturing an SOI substrate provided with a single-crystal semiconductor layer which can be practically used even when a substrate having a low heat-resistant temperature, such as a glass substrate or the like, is used, and further, to manufacture a semiconductor device with high reliability by using such an SOI substrate. A semiconductor layer which is separated from a semiconductor substrate and bonded to a supporting substrate having an insulating surface is irradiated with electromagnetic waves, and the surface of the semiconductor layer is subjected to polishing treatment. At least part of a region of the semiconductor layer is melted by irradiation with electromagnetic waves, and a crystal defect in the semiconductor layer can be reduced. Further, the surface of the semiconductor layer can be polished and planarized by polishing treatment.
摘要翻译：本发明的一个目的是提供一种制造具有单晶半导体层的SOI衬底的方法，即使当具有低耐热温度的衬底如玻璃衬底或并且进一步通过使用这种SOI衬底制造具有高可靠性的半导体器件。将与半导体基板分离并与具有绝缘面的支撑基板接合的半导体层用电磁波照射，对半导体层的表面进行抛光处理。半导体层的区域的至少一部分通过电磁波的照射而熔融，能够降低半导体层的晶体缺陷。此外，半导体层的表面可以通过抛光处理被抛光和平坦化。

4. 发明申请

US20090004764A1 Method for manufacturing SOI substrate and method for manufacturing semiconductor device 审中-公开
标题翻译：制造SOI衬底的方法和半导体器件的制造方法
公开(公告)号：US20090004764A1
公开(公告)日：2009-01-01
申请号：US12213510
申请日：2008-06-20
申请人： Hideto Ohnuma , Ryota Imahayashi , Yoichi Iikubo , Kenichiro Makino , Sho Nagamatsu
发明人： Hideto Ohnuma , Ryota Imahayashi , Yoichi Iikubo , Kenichiro Makino , Sho Nagamatsu
IPC分类号： H01L21/782 , H01L33/00 , H01L21/00 , H01L21/30 , H01L21/46
CPC分类号： H01L27/1266 , H01L21/02164 , H01L21/02211 , H01L21/02271 , H01L21/31612 , H01L21/76254 , H01L27/1214 , H01L29/66772
摘要： To provide a method for manufacturing an SOI substrate provided with a single-crystal semiconductor layer which is suitable for practical use even when a substrate of which heat-resistant temperature is low, such as a glass substrate, is used, and to manufacture a highly reliable semiconductor device using such an SOI substrate. A semiconductor layer, which is separated from a semiconductor substrate and bonded to a supporting substrate having an insulating surface, is heated by supplying high energy by using at least one kind of particles having the high energy, and polishing treatment is performed on the heated surface of the semiconductor layer. At least part of a region of the semiconductor layer can be melted by the heat treatment by supplying high energy to reduce crystal defects in the semiconductor layer. Further, the surface of the semiconductor layer can be polished and planarized by the polishing treatment.
摘要翻译：为了提供一种制造具有单晶半导体层的SOI衬底的方法，即使使用诸如玻璃衬底的耐热温度低的衬底也适用于实际使用，并且制造高度使用这种SOI衬底的可靠的半导体器件。通过使用至少一种具有高能量的颗粒提供高能量来加热与半导体衬底分离并结合到具有绝缘表面的支撑衬底的半导体层，并且对被加热表面进行抛光处理的半导体层。半导体层的区域的至少一部分可以通过提供高能量的热处理而熔化，以减少半导体层中的晶体缺陷。此外，可以通过抛光处理对半导体层的表面进行抛光和平坦化。

5. 发明授权

US08361873B2 Method of manufacturing an SOI substrate and method of manufacturing a semiconductor device 有权
公开(公告)号：US08361873B2
公开(公告)日：2013-01-29
申请号：US12762600
申请日：2010-04-19
申请人： Hideto Ohnuma , Ryota Imahayashi , Yoichi Iikubo , Kenichiro Makino , Sho Nagamatsu
发明人： Hideto Ohnuma , Ryota Imahayashi , Yoichi Iikubo , Kenichiro Makino , Sho Nagamatsu
IPC分类号： H01L21/331 , H01L21/8222
CPC分类号： H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L29/78654
摘要： It is an object of the present invention is to provide a method of manufacturing an SOI substrate provided with a single-crystal semiconductor layer which can be practically used even when a substrate having a low heat-resistant temperature, such as a glass substrate or the like, is used, and further, to manufacture a semiconductor device with high reliability by using such an SOI substrate. A semiconductor layer which is separated from a semiconductor substrate and bonded to a supporting substrate having an insulating surface is irradiated with electromagnetic waves, and the surface of the semiconductor layer is subjected to polishing treatment. At least part of a region of the semiconductor layer is melted by irradiation with electromagnetic waves, and a crystal defect in the semiconductor layer can be reduced. Further, the surface of the semiconductor layer can be polished and planarized by polishing treatment.

6. 发明授权

US08362474B2 Organic field effect transistor and semiconductor device 有权
标题翻译：有机场效应晶体管和半导体器件
公开(公告)号：US08362474B2
公开(公告)日：2013-01-29
申请号：US13280596
申请日：2011-10-25
申请人： Shinobu Furukawa , Ryota Imahayashi , Kaoru Kato
发明人： Shinobu Furukawa , Ryota Imahayashi , Kaoru Kato
IPC分类号： H01L51/30
CPC分类号： C07D209/88 , H01L51/0059 , H01L51/006 , H01L51/0061 , H01L51/0072 , H01L51/0508
摘要： It is an object to provide an organic field effect transistor including an electrode which can reduce an energy barrier at an interface between a conductive layer and a semiconductor layer, and a semiconductor device including the organic field effect transistor. A composite layer containing an organic compound and an inorganic compound is provided in at least part of one of a source electrode and a drain electrode in an organic field effect transistor, and as the organic compound, a carbazole derivative represented by the general formula (1) is used. By providing the composite layer in at least part of one of the source electrode and the drain electrode, an energy barrier at an interface between a conductive layer and a semiconductor layer can be reduced.
摘要翻译：本发明的目的是提供一种包括能够降低导电层和半导体层之间的界面处的能量势垒的电极的有机场效应晶体管，以及包括该有机场效应晶体管的半导体器件。在有机场效应晶体管中的源电极和漏电极的至少一部分中设置含有有机化合物和无机化合物的复合层，作为有机化合物，可以使用通式（1）表示的咔唑衍生物）用来。通过在源电极和漏电极中的至少一部分中提供复合层，可以减少导电层和半导体层之间的界面处的能量势垒。

7. 发明授权

US07560735B2 Semiconductor element, organic transistor, light-emitting device, and electronic device 有权
标题翻译：半导体元件，有机晶体管，发光器件和电子器件
公开(公告)号：US07560735B2
公开(公告)日：2009-07-14
申请号：US11379014
申请日：2006-04-17
申请人： Shinobu Furukawa , Ryota Imahayashi
发明人： Shinobu Furukawa , Ryota Imahayashi
IPC分类号： H01L31/12
CPC分类号： H01L51/105 , H01L51/0061 , H01L51/0072 , H01L51/0541 , H01L51/0545 , H01L51/5203 , H01L51/5296
摘要： It is an object of the present invention to provide an organic transistor having a low drive voltage. It is also another object of the present invention to provide an organic transistor, in which light emission can be obtained, which can be manufactured simply and easily. According to an organic light-emitting transistor, a composite layer containing an organic compound having a hole-transporting property and a metal oxide is used as part of the electrode that injects holes among source and drain electrodes, and a composite layer containing an organic compound having an electron-transporting property and an alkaline metal or an alkaline earth metal is used as part of the electrode that injects electrons, where either composite layer has a structure of being in contact with an organic semiconductor layer.
摘要翻译：本发明的目的是提供一种具有低驱动电压的有机晶体管。本发明的另一个目的是提供可以简单且容易地制造可以获得发光的有机晶体管。根据有机发光晶体管，使用含有空穴传输性有机化合物的复合层和金属氧化物作为在源极和漏极之间注入空穴的电极的一部分，以及含有有机化合物的复合层具有电子传输性和碱金属或碱土金属作为注入电子的电极的一部分，其中复合层具有与有机半导体层接触的结构。

8. 发明授权

US06821811B2 Organic thin film transistor and method of manufacturing the same, and semiconductor device having the organic thin film transistor 失效
公开(公告)号：US06821811B2
公开(公告)日：2004-11-23
申请号：US10628260
申请日：2003-07-29
申请人： Yoshiharu Hirakata , Tetsuji Ishitani , Shuji Fukai , Ryota Imahayashi
发明人： Yoshiharu Hirakata , Tetsuji Ishitani , Shuji Fukai , Ryota Imahayashi
IPC分类号： H01L2100
CPC分类号： H01L51/0545 , H01L51/0003 , H01L51/0037
摘要： There have been problems in that a dedicated apparatus is needed for a conventional method of manufacturing an organic thin film transistor and in that: a little amount of an organic semiconductor film is formed with respect to a usage amount of a material; and most of the used material is discarded. Further, apparatus maintenance such as cleaning of the inside of an apparatus cup or chamber has needed to be frequently carried out in order to remove the contamination resulting from the material that is wastefully discarded. Therefore, a great cost for materials and man-hours for maintenance of apparatus have been required. In the present invention, a uniform organic semiconductor film is formed by forming an aperture between a first substrate for forming the organic semiconductor film and a second substrate used for injection with an insulating film formed at a specific spot and by injecting an organic semiconductor film material into the aperture due to capillarity to the aperture. The insulating film formed at the specific spot enables formation of the organic semiconductor film with high controllability. Further, the insulating film can also serve as a spacer that holds the aperture, that is, an interval (gap) between the substrates.

9. 发明授权

US08368065B2 Organic thin film transistor and method of manufacturing the same, and semiconductor device having the organic thin film transistor 有权
公开(公告)号：US08368065B2
公开(公告)日：2013-02-05
申请号：US13160811
申请日：2011-06-15
申请人： Yoshiharu Hirakata , Tetsuji Ishitani , Shuji Fukai , Ryota Imahayashi
发明人： Yoshiharu Hirakata , Tetsuji Ishitani , Shuji Fukai , Ryota Imahayashi
IPC分类号： H01L51/30
CPC分类号： H01L51/0545 , H01L51/0003 , H01L51/0037
摘要： There have been problems in that a dedicated apparatus is needed for a conventional method of manufacturing an organic thin film transistor and in that: a little amount of an organic semiconductor film is formed with respect to a usage amount of a material; and most of the used material is discarded. Further, apparatus maintenance such as cleaning of the inside of an apparatus cup or chamber has needed to be frequently carried out in order to remove the contamination resulting from the material that is wastefully discarded. Therefore, a great cost for materials and man-hours for maintenance of apparatus have been required. In the present invention, a uniform organic semiconductor film is formed by forming an aperture between a first substrate for forming the organic semiconductor film and a second substrate used for injection with an insulating film formed at a specific spot and by injecting an organic semiconductor film material into the aperture due to capillarity to the aperture. The insulating film formed at the specific spot enables formation of the organic semiconductor film with high controllability. Further, the insulating film can also serve as a spacer that holds the aperture, that is, an interval (gap) between the substrates.

10. 发明授权

US08343816B2 Organic transistor, manufacturing method of semiconductor device and organic transistor 有权
标题翻译：有机晶体管，半导体器件和有机晶体管的制造方法
公开(公告)号：US08343816B2
公开(公告)日：2013-01-01
申请号：US12850652
申请日：2010-08-05
申请人： Ryota Imahayashi , Shinobu Furukawa , Atsuo Isobe , Yasuyuki Arai , Shunpei Yamazaki
发明人： Ryota Imahayashi , Shinobu Furukawa , Atsuo Isobe , Yasuyuki Arai , Shunpei Yamazaki
IPC分类号： H01L21/00
CPC分类号： H01L51/0512 , H01L21/02175 , H01L21/02244 , H01L21/02247 , H01L21/02252 , H01L21/31683 , H01L51/0002 , H01L51/0055 , H01L51/0525 , H01L51/0541 , H01L51/0545 , H01L51/0566
摘要： It is an object to form a high quality gate insulating film which is dense and has a strong insulation resistance property, and to propose a high reliable organic transistor in which a tunnel leakage current is little. One mode of the organic transistor of the present invention has a step of forming the gate insulating film by forming the conductive layer which becomes the gate electrode activating oxygen (or gas including oxygen) or nitrogen (or gas including nitrogen) or the like using dense plasma in which density of electron is 1011 cm−3 or more, and electron temperature is a range of 0.2 eV to 2.0 eV with plasma activation, and reacting directly with a portion of the conductive layer which becomes the gate electrode to be insulated.
摘要翻译：本发明的目的是形成致密且具有很强绝缘电阻特性的高质量栅极绝缘膜，并且提出了隧道泄漏电流很小的高可靠性有机晶体管。本发明的有机晶体管的一种模式具有如下步骤：通过使用密集的方法形成作为活化氧（或含氧气体）或氮（或含氮气体）的栅极的导电层形成栅极绝缘膜电子密度为1011cm -3以上的等离子体，等离子体活化时电子温度为0.2eV〜2.0eV的范围，直接与成为要被绝缘的栅电极的导体层的一部分反应。

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