专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20070176249A1 Semiconductor physical quantity sensor of electrostatic capacitance type and method for manufacturing the same 失效
标题翻译：静电电容型半导体物理量传感器及其制造方法
公开(公告)号：US20070176249A1
公开(公告)日：2007-08-02
申请号：US10599396
申请日：2005-12-12
申请人： Ryosuke Meshii , Kouji Sakai , Atsushi Ishigami , Eichi Furukubo
发明人： Ryosuke Meshii , Kouji Sakai , Atsushi Ishigami , Eichi Furukubo
IPC分类号： H01L29/84 , H01L21/00
CPC分类号： G01L9/0042 , G01L1/14
摘要： In a semiconductor physical quantity sensor of electrostatic capacitance type, mutually facing peripheral areas (bonding areas) of a glass substrate and a silicon substrate are contacted for anodic bonding, while at the same time, both substrates have an anodic bonding voltage applied therebetween so as to be integrated. A fixed electrode is formed on a bonding face-side surface of the silicon substrate, while a movable electrode is formed on a bonding face-side surface of the semiconductor substrate. An equipotential wiring, which short-circuits the fixed electrode to the movable electrode as a countermeasure to discharge in anodic bonding, is formed on the bonding face-side surface of the glass substrate inside the bonding area before the anodic bonding. After the anodic bonding, the equipotential wiring is cut and removed. By manufacturing the sensor in this manner, the fixed electrode of the insulating substrate is made equipotential to the movable electrode of the semiconductor substrate when the insulating substrate is anodically bonded to the semiconductor substrate, thereby preventing discharge from occurring. Accordingly, it is possible to obtain a high bonding strength and desired sensor characteristics without causing bonding voids to occur and a sensor chip to increase in size.
摘要翻译：在静电电容型的半导体物理量传感器中，与玻璃基板和硅基板的相互面对的周边区域（接合区域）接触进行阳极接合，同时两基板之间具有阳极接合电压，被整合。在硅衬底的接合面侧表面上形成固定电极，而在半导体衬底的接合面侧表面形成可动电极。在阳极接合之前的接合区域内的玻璃基板的接合面侧面上形成有将固定电极短路到可动电极的等电位线作为阳极接合放电的对策。阳极接合后，等电位线被切断并移除。通过以这种方式制造传感器，当绝缘基板被阳极结合到半导体基板上时，使绝缘基板的固定电极与半导体基板的可动电极等电位，从而防止发生放电。因此，可以获得高的接合强度和期望的传感器特性，而不会发生接合空隙和传感器芯片的尺寸增大。

2. 发明授权

US07464591B2 Semiconductor acceleration sensor 有权
标题翻译：半导体加速度传感器
公开(公告)号：US07464591B2
公开(公告)日：2008-12-16
申请号：US11579178
申请日：2006-01-20
申请人： Yoshihisa Fukuda , Kouji Sakai , Atsushi Ishigami , Eiichi Furukubo , Ryosuke Meshii , Takashi Yajima
发明人： Yoshihisa Fukuda , Kouji Sakai , Atsushi Ishigami , Eiichi Furukubo , Ryosuke Meshii , Takashi Yajima
IPC分类号： G01P15/02 , G01P15/00
CPC分类号： G01P15/08 , G01P2015/0871
摘要： A semiconductor acceleration sensor having beam parts formed in substantially L-shape to surround a weight part, wherein formed to surround a square part, as seen in plan view and constituting the weight part, are two elongated L-shaped beam parts, at locations close to proximal end portions of which are formed protruding portions protruding from a fixed part toward the weight part, and receiving recessed portions protruding from the weight part toward the fixed part to surround the protruding portions. The protruding portions have an outer shape substantially the same as an inner wall surface of the receiving recessed portions so that movements of the weight part in any directions in a horizontal direction perpendicular to an up and down direction are limited as a result of reception of the protruding portions by the receiving recessed portions. Thus, even when a side impact is applied to the acceleration sensor, the weight part is prevented from moving significantly, thereby preventing an excessive stress from being applied to the beam parts to break the beam parts.
摘要翻译：一种半导体加速度传感器，其具有形成为大致L形以包围重量部分的梁部分，其中形成为包围正方形部分，如在平面图中看到并构成重量部分的两个细长L形梁部分，在靠近的位置其基端部形成有从固定部朝向配重部突出的突出部，并且容纳从重物部朝向固定部突出以包围突出部的凹部。突出部具有与容纳凹部的内壁面大致相同的外形，使得重量部在与上下方向垂直的水平方向上的任何方向上的移动受到限制突出部分由接收凹部。因此，即使当对加速度传感器施加侧面冲击时，防止重量部分显着移动，从而防止过大的应力施加到梁部分以破坏梁部分。

3. 发明申请

US20080022770A1 Semiconductor Acceleration Sensor 有权
标题翻译：半导体加速度传感器
公开(公告)号：US20080022770A1
公开(公告)日：2008-01-31
申请号：US11579178
申请日：2006-01-20
申请人： Yoshihisa Fukuda , Kouji Sakai , Atsushi Ishigami , Eiichi Furukubo , Ryosuke Meshii , Takashi Yajima
发明人： Yoshihisa Fukuda , Kouji Sakai , Atsushi Ishigami , Eiichi Furukubo , Ryosuke Meshii , Takashi Yajima
IPC分类号： G01P15/02
CPC分类号： G01P15/08 , G01P2015/0871
摘要： A semiconductor acceleration sensor having beam parts formed in substantially L-shape to surround a weight part, wherein formed to surround a square part, as seen in plan view and constituting the weight part, are two elongated L-shaped beam parts, at locations close to proximal end portions of which are formed protruding portions protruding from a fixed part toward the weight part, and receiving recessed portions protruding from the weight part toward the fixed part to surround the protruding portions. The protruding portions have an outer shape substantially the same as an inner wall surface of the receiving recessed portions so that movements of the weight part in any directions in a horizontal direction perpendicular to an up and down direction are limited as a result of reception of the protruding portions by the receiving recessed portions. Thus, even when a side impact is applied to the acceleration sensor, the weight part is prevented from moving significantly, thereby preventing an excessive stress from being applied to the beam parts to break the beam parts.
摘要翻译：一种半导体加速度传感器，其具有形成为大致L形以包围重量部分的梁部分，其中形成为包围正方形部分，如在平面图中看到并构成重量部分的两个细长L形梁部分，在靠近的位置其基端部形成有从固定部朝向配重部突出的突出部，并且容纳从重物部朝向固定部突出以包围突出部的凹部。突出部具有与容纳凹部的内壁面大致相同的外形，使得重量部在与上下方向垂直的水平方向上的任何方向上的移动受到限制突出部分由接收凹部。因此，即使当对加速度传感器施加侧面冲击时，防止重量部分显着移动，从而防止过大的应力施加到梁部分以破坏梁部分。

4. 发明授权

US07799595B2 Semiconductor physical quantity sensor of electrostatic capacitance type and method for manufacturing the same 失效
标题翻译：静电电容型半导体物理量传感器及其制造方法
公开(公告)号：US07799595B2
公开(公告)日：2010-09-21
申请号：US10599396
申请日：2005-12-12
申请人： Ryosuke Meshii , Kouji Sakai , Atsushi Ishigami , Eiichi Furukubo
发明人： Ryosuke Meshii , Kouji Sakai , Atsushi Ishigami , Eiichi Furukubo
IPC分类号： H01L21/00 , H01L21/76
CPC分类号： G01L9/0042 , G01L1/14
摘要： In a semiconductor physical quantity sensor of electrostatic capacitance type, mutually facing peripheral areas (bonding areas) of a glass substrate and a silicon substrate are contacted for anodic bonding, while at the same time, both substrates have an anodic bonding voltage applied therebetween so as to be integrated. A fixed electrode is formed on a bonding face-side surface of the silicon substrate, while a movable electrode is formed on a bonding face-side surface of the semiconductor substrate. An equipotential wiring, which short-circuits the fixed electrode to the movable electrode as a countermeasure to discharge in anodic bonding, is formed on the bonding face-side surface of the glass substrate inside the bonding area before the anodic bonding. After the anodic bonding, the equipotential wiring is cut and removed. By manufacturing the sensor in this manner, the fixed electrode of the insulating substrate is made equipotential to the movable electrode of the semiconductor substrate when the insulating substrate is anodically bonded to the semiconductor substrate, thereby preventing discharge from occurring. Accordingly, it is possible to obtain a high bonding strength and desired sensor characteristics without causing bonding voids to occur and a sensor chip to increase in size.
摘要翻译：在静电电容型的半导体物理量传感器中，与玻璃基板和硅基板的相互面对的周边区域（接合区域）接触进行阳极接合，同时两基板之间具有阳极接合电压，被整合。在硅衬底的接合面侧表面上形成固定电极，而在半导体衬底的接合面侧表面形成可动电极。在阳极接合之前的接合区域内的玻璃基板的接合面侧面上形成有将固定电极短路到可动电极的等电位线作为阳极接合放电的对策。阳极接合后，等电位线被切断并移除。通过以这种方式制造传感器，当绝缘基板被阳极结合到半导体基板上时，使绝缘基板的固定电极与半导体基板的可动电极等电位，从而防止发生放电。因此，可以获得高的接合强度和期望的传感器特性，而不会发生接合空隙和传感器芯片的尺寸增大。

5. 发明授权

US07243561B2 Sensor device 有权
标题翻译：传感器装置
公开(公告)号：US07243561B2
公开(公告)日：2007-07-17
申请号：US10531074
申请日：2004-08-26
申请人： Atsushi Ishigami , Kouji Sakai , Ryosuke Meshii
发明人： Atsushi Ishigami , Kouji Sakai , Ryosuke Meshii
IPC分类号： G01D21/02 , G01D11/24 , G01P1/02 , G01L19/14
CPC分类号： B60C23/0408 , G01L19/0084 , G01L19/0092 , G01L19/141 , G01L19/148 , G01P1/023 , H01L2224/48091 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2924/181 , H01L2924/1815 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A sensor unit includes a pressure sensor, an acceleration sensor and a signal-processing circuit, which are disposed on the bottom surface of a lead to form a line in the longitudinal direction of the sensor unit. The pressure sensor and the acceleration sensor are disposed at respective symmetrical positions with respect to the center of the signal-processing circuit in the longitudinal direction of the sensor unit. Each of the pressure sensor and the acceleration sensor has substantially the same height dimension. The sensors, the signal-processing circuit and the lead are sealed with a molded body, in such a manner as to allow lead terminals of the lead to protrude outside the molded body. The signal-processing circuit is operable, based on a signal from the acceleration sensor, to control the ON/OFF action of the pressure sensor.
摘要翻译：传感器单元包括压力传感器，加速度传感器和信号处理电路，它们设置在引线的底表面上，以在传感器单元的纵向上形成一条线。压力传感器和加速度传感器相对于传感器单元的纵向方向上的信号处理电路的中心设置在相应的对称位置。压力传感器和加速度传感器中的每一个具有基本相同的高度尺寸。传感器，信号处理电路和引线用成型体密封，使得引线的引线端子突出到模制体的外部。信号处理电路基于来自加速度传感器的信号来操作以控制压力传感器的ON / OFF动作。

6. 发明申请

US20060053908A1 Sensor device 有权
标题翻译：传感器装置
公开(公告)号：US20060053908A1
公开(公告)日：2006-03-16
申请号：US10531074
申请日：2004-08-26
申请人： Atsushi Ishigami , Kouji Sakai , Ryosuke Meshii
发明人： Atsushi Ishigami , Kouji Sakai , Ryosuke Meshii
IPC分类号： G01D21/02 , G01L19/14 , G01D11/24 , G01P1/02
CPC分类号： B60C23/0408 , G01L19/0084 , G01L19/0092 , G01L19/141 , G01L19/148 , G01P1/023 , H01L2224/48091 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2924/181 , H01L2924/1815 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A sensor unit includes a pressure sensor, an acceleration sensor and a signal-processing circuit, which are disposed on the bottom surface of a lead to form a line in the longitudinal direction of the sensor unit. The pressure sensor and the acceleration sensor are disposed at respective symmetrical positions with respect to the center of the signal-processing circuit in the longitudinal direction of the sensor unit. Each of the pressure sensor and the acceleration sensor has substantially the same height dimension. The sensors, the signal-processing circuit and the lead are sealed with a molded body, in such a manner as to allow lead terminals of the lead to protrude outside the molded body. The signal-processing circuit is operable, based on a signal from the acceleration sensor, to control the ON/OFF action of the pressure sensor.
摘要翻译：传感器单元包括压力传感器，加速度传感器和信号处理电路，它们设置在引线的底表面上，以在传感器单元的纵向上形成一条线。压力传感器和加速度传感器相对于传感器单元的纵向方向上的信号处理电路的中心设置在相应的对称位置。压力传感器和加速度传感器中的每一个具有基本相同的高度尺寸。传感器，信号处理电路和引线用成型体密封，使得引线的引线端子突出到模制体的外部。信号处理电路基于来自加速度传感器的信号来操作以控制压力传感器的ON / OFF动作。

7. 发明授权

US08785806B2 Submerged arc welding method with multiple electrodes for steel material 有权
标题翻译：埋弧焊法采用多层电极钢材
公开(公告)号：US08785806B2
公开(公告)日：2014-07-22
申请号：US12918095
申请日：2009-02-19
申请人： Atsushi Ishigami , Kenji Oi , Naoya Hayakawa
发明人： Atsushi Ishigami , Kenji Oi , Naoya Hayakawa
IPC分类号： B23K9/18 , B23K9/025 , B23K9/028
CPC分类号： B23K9/188 , B23K9/0253 , B23K9/0282 , B23K2101/06 , B23K2103/04
摘要： Steel is subjected to multiple-electrode submerged arc welding with three or more electrodes in which a direct-current power source is used to supply current to a first electrode, the welding by the first electrode is carried out at a current density of 250 A/mm2 or more, preferably with a wire diameter of 3.2 mm or less and a weld current of 1,000 A or more, the welding by the second electrode is carried out at a current density of 150 A/mm2 or more, preferably with a weld current of 600 A or more, one of the interelectrode spacings is 23 mm or more on a surface of the steel, and the remaining interelectrode spacings are 20 mm or less.
摘要翻译：钢用三电极或多层电极进行多电极埋弧焊，其中使用直流电源向第一电极供电，第一电极的焊接以250A / mm2以上，优选线径为3.2mm以下，焊接电流为1000A以上，第二电极的焊接以150A / mm 2以上的电流密度进行，优选为焊接电流 600A以上的电极间距离在钢表面上为23mm以上，其余的电极间间隔为20mm以下。

8. 发明授权

US09347638B2 Vehicular lamp 有权
标题翻译：车灯
公开(公告)号：US09347638B2
公开(公告)日：2016-05-24
申请号：US13631065
申请日：2012-09-28
申请人： Atsushi Ishigami , Shigehiko Kazaoka
发明人： Atsushi Ishigami , Shigehiko Kazaoka
IPC分类号： B60Q1/00 , F21S8/10 , B60Q3/02
CPC分类号： F21S48/25 , B60Q3/258 , F21S43/14 , F21S43/237 , F21S43/245 , F21S43/247 , F21S43/27 , F21S43/50 , F21S43/51
摘要： A vehicular lamp includes: a lamp body having an opening portion; an outer cover that closes the opening portion and that, together with the lamp body, forms a lamp chamber between the outer cover and the lamp body; a light emission portion disposed within the lamp chamber; a vapor deposition sheet that is disposed within the lamp chamber and that covers the lamp body with at least a portion of the light emission portion exposed; and an engaging portion that at least one of the outer cover and the lamp body has and that is capable of engaging with the vapor deposition sheet and holding the vapor deposition sheet in a shape that substantially conforms to the outer cover or the lamp body.
摘要翻译：一种车灯包括：具有开口部的灯体; 封闭开口部的外盖，与灯体一起在外罩和灯体之间形成灯室; 设置在所述灯室内的发光部; 气相沉积片，其设置在所述灯室内并且在所述发光部分的至少一部分露出的状态下覆盖所述灯体; 以及接合部，所述外盖和所述灯体中的至少一个具有能够与所述气相沉积片接合并且将所述气相沉积片保持为基本上符合所述外盖或所述灯体的形状。

9. 发明申请

US20120325362A1 SUBMERGED ARC WELDING METHOD FOR STEEL PLATE 有权
标题翻译：钢板焊接弧焊方法
公开(公告)号：US20120325362A1
公开(公告)日：2012-12-27
申请号：US13321970
申请日：2009-09-04
申请人： Atsushi Ishigami , Kenji Oi , Naoya Hayakawa
发明人： Atsushi Ishigami , Kenji Oi , Naoya Hayakawa
IPC分类号： F16L9/22 , F16L13/02
CPC分类号： B23K9/18 , B23K9/0253 , B23K33/006 , B23K2101/06 , B23K2101/10 , B23K2103/04
摘要： Provided is a submerged arc welding method for a steel plate. In welding the steel plate from an internal surface or an external surface by a submerged arc welding, welding condition is set such that, a cross-sectional area of internal weld metal S1 and a cross-sectional area of external weld metal S2 satisfy the formula (1), the formula (2), and the formula (3), that is, 0.40≦(S1+S2)/t2≦0.80 . . . (1), S1/t2≦0.35 . . . (2), and S2/t2≦0.45 . . . (3), wherein t is a plate thickness of the steel plate (mm), S1 is a cross-sectional area of the internal weld metal (mm2) excluding the cross-sectional area of a portion of the internal weld metal overlapping with the external weld metal after external welding, and S2 is a cross-sectional area of the external weld metal (mm2).
摘要翻译：提供一种钢板的埋弧焊接方法。在通过埋弧焊接从内表面或外表面焊接钢板的情况下，设定焊接条件，使得内部焊接金属S1的横截面积和外部焊接金属S2的截面积满足公式（1），式（2）和式（3），即0.40＆nlE;（S1 + S2）/t2&nlE=0.80。。。（1），S1 / t2＆nlE; 0.35。。。（2），S2 / t2＆nlE; 0.45。。。（3），其中t是钢板的板厚（mm），S1是内部焊接金属的横截面面积（mm2），不包括与内部焊接金属重叠的部分的横截面面积外部焊接后的外部焊接金属，S2为外部焊接金属的横截面积（mm2）。

10. 发明申请

US20110036814A1 SUBMERGED ARC WELDING METHOD WITH MULTIPLE ELECTRODES FOR STEEL MATERIAL 有权
标题翻译：用于钢材的多电极电弧焊接方法
公开(公告)号：US20110036814A1
公开(公告)日：2011-02-17
申请号：US12918095
申请日：2009-02-19
申请人： Atsushi Ishigami , Kenji Oi , Naoya Hayakawa
发明人： Atsushi Ishigami , Kenji Oi , Naoya Hayakawa
IPC分类号： B23K9/18
CPC分类号： B23K9/188 , B23K9/0253 , B23K9/0282 , B23K2101/06 , B23K2103/04
摘要： Steel is subjected to multiple-electrode submerged arc welding with three or more electrodes in which a direct-current power source is used to supply current to a first electrode, the welding by the first electrode is carried out at a current density of 250 A/mm2 or more, preferably with a wire diameter of 3.2 mm or less and a weld current of 1,000 A or more, the welding by the second electrode is carried out at a current density of 150 A/mm2 or more, preferably with a weld current of 600 A or more, one of the interelectrode spacings is 23 mm or more on a surface of the steel, and the remaining interelectrode spacings are 20 mm or less.
摘要翻译：钢用三电极或多层电极进行多电极埋弧焊，其中使用直流电源向第一电极供电，第一电极的焊接以250A / mm2以上，优选线径为3.2mm以下，焊接电流为1000A以上，第二电极的焊接以150A / mm 2以上的电流密度进行，优选为焊接电流 600A以上的电极间距离在钢表面上为23mm以上，其余的电极间间隔为20mm以下。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式