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1. 发明申请

US20110227137A1 SEMICONDUCTOR DEVICE AND DRIVING METHOD OF THE SAME 有权
标题翻译：半导体器件及其驱动方法
公开(公告)号：US20110227137A1
公开(公告)日：2011-09-22
申请号：US13151299
申请日：2011-06-02
申请人： Ryoji NOMURA , Hiroko ABE , Yuji IWAKI , Shunpei YAMAZAKI
发明人： Ryoji NOMURA , Hiroko ABE , Yuji IWAKI , Shunpei YAMAZAKI
IPC分类号： H01L31/09 , H01L31/0352 , B82Y99/00
CPC分类号： G11C16/22 , B82Y10/00 , G11C13/0014 , G11C13/0059 , G11C13/04 , G11C17/16 , G11C2213/77 , G11C2213/79 , H01L27/285 , H01L51/0051 , H01L51/0059
摘要： The present invention provides a semiconductor device including a memory that has a memory cell array including a plurality of memory cells, a control circuit that controls the memory, and an antenna, where the memory cell array has a plurality of bit lines extending in a first direction and a plurality of word lines extending in a second direction different from the first direction, and each of the plurality of memory cells has an organic compound layer provided between the bit line and the word line. Data is written by applying optical or electric action to the organic compound layer.
摘要翻译：本发明提供了一种半导体器件，其包括具有包括多个存储单元的存储单元阵列的存储器，控制存储器的控制电路和天线，其中存储单元阵列具有在第一方向和沿与第一方向不同的第二方向延伸的多个字线，并且多个存储单元中的每一个具有设置在位线和字线之间的有机化合物层。通过向有机化合物层施加光学或电动作来写入数据。

2. 发明申请

US20090121874A1 SEMICONDUCTOR DEVICE AND DRIVING METHOD OF THE SAME 有权
标题翻译：半导体器件及其驱动方法
公开(公告)号：US20090121874A1
公开(公告)日：2009-05-14
申请号：US12349650
申请日：2009-01-07
申请人： Ryoji NOMURA , Hiroko ABE , Yuji IWAKI , Shunpei YAMAZAKI
发明人： Ryoji NOMURA , Hiroko ABE , Yuji IWAKI , Shunpei YAMAZAKI
IPC分类号： G08B13/14
CPC分类号： G11C16/22 , B82Y10/00 , G11C13/0014 , G11C13/0059 , G11C13/04 , G11C17/16 , G11C2213/77 , G11C2213/79 , H01L27/285 , H01L51/0051 , H01L51/0059
摘要： The present invention provides a semiconductor device including a memory that has a memory cell array including a plurality of memory cells, a control circuit that controls the memory, and an antenna, where the memory cell array has a plurality of bit lines extending in a first direction and a plurality of word lines extending in a second direction different from the first direction, and each of the plurality of memory cells has an organic compound layer provided between the bit line and the word line. Data is written by applying optical or electric action to the organic compound layer.
摘要翻译：本发明提供了一种半导体器件，其包括具有包括多个存储单元的存储单元阵列的存储器，控制存储器的控制电路和天线，其中存储单元阵列具有在第一方向和沿与第一方向不同的第二方向延伸的多个字线，并且多个存储单元中的每一个具有设置在位线和字线之间的有机化合物层。通过向有机化合物层施加光学或电动作来写入数据。

3. 发明申请

US20110031469A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110031469A1
公开(公告)日：2011-02-10
申请号：US12904313
申请日：2010-10-14
申请人： Shunpei YAMAZAKI , Hiroko ABE , Yukie NEMOTO , Ryoji NOMURA , Mikio YUKAWA
发明人： Shunpei YAMAZAKI , Hiroko ABE , Yukie NEMOTO , Ryoji NOMURA , Mikio YUKAWA
IPC分类号： H01L45/00 , H01L29/786
CPC分类号： H01L27/2463 , B82Y10/00 , G11C13/00 , G11C13/0004 , G11C13/0014 , G11C13/0016 , G11C13/0069 , G11C17/143 , G11C17/16 , G11C17/18 , G11C2013/009 , G11C2213/77 , G11C2213/79 , H01L21/8221 , H01L23/66 , H01L27/0688 , H01L27/1266 , H01L27/2409 , H01L27/2436 , H01L27/283 , H01L45/06 , H01L45/065 , H01L45/1213 , H01L45/1233 , H01L45/141 , H01L45/143 , H01L45/144 , H01L51/0098 , H01L2223/6677 , H01L2224/48091 , H01L2224/48137 , H01L2224/49107 , H01L2224/73265 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
摘要： The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.
摘要翻译：本发明提供了一种非易失性，易于制造并且可另外写入的半导体器件。本发明的半导体器件包括多个晶体管，用作晶体管的源极布线或漏极布线的导电层，以及与多个晶体管之一重叠的存储元件，以及用作天线。存储元件包括第一导电层，有机化合物层和相变层，以及依次层叠的第二导电层。用作天线的导电层和用作多个晶体管的源极布线或漏极布线的导电层设置在同一层上。

4. 发明申请

US20100295034A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100295034A1
公开(公告)日：2010-11-25
申请号：US12847352
申请日：2010-07-30
申请人： Hiroko ABE , Yuji IWAKI , Mikio YUKAWA , Shunpei YAMAZAKI , Yasuyuki ARAI , Yasuko WATANABE , Yoshitaka MORIYA
发明人： Hiroko ABE , Yuji IWAKI , Mikio YUKAWA , Shunpei YAMAZAKI , Yasuyuki ARAI , Yasuko WATANABE , Yoshitaka MORIYA
IPC分类号： H01L51/00 , H01L23/52 , H01L45/00
CPC分类号： H01L51/0579 , B82Y10/00 , G11C13/0014 , G11C13/04 , H01L27/112 , H01L27/115 , H01L51/0051 , H01L51/0059
摘要： It is an object of the present invention to provide a semiconductor device in which data can be written except when manufacturing the semiconductor device and that counterfeits can be prevented. Moreover, it is another object of the invention to provide an inexpensive semiconductor device including a memory having a simple structure. The semiconductor device includes a field effect transistor formed over a single crystal semiconductor substrate, a first conductive layer formed over the field effect transistor, an organic compound layer formed over the first conductive layer, and a second conductive layer formed over the organic compound layer, and a memory element includes the first conductive layer, the organic compound, and the second conductive layer. According to the above structure, a semiconductor device which can conduct non-contact transmission/reception of data can be provided by possessing an antenna.
摘要翻译：本发明的目的是提供一种其中可以写入数据的半导体器件，除了制造半导体器件并且可以防止伪造的情况下。此外，本发明的另一个目的是提供一种廉价的半导体器件，其包括具有简单结构的存储器。半导体器件包括形成在单晶半导体衬底上的场效应晶体管，形成在场效应晶体管上的第一导电层，形成在第一导电层上的有机化合物层，以及形成在有机化合物层上的第二导电层，并且存储元件包括第一导电层，有机化合物和第二导电层。根据上述结构，可以通过拥有天线来提供可以进行数据的非接触式发送/接收的半导体器件。

5. 发明申请

US20100317161A1 METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER 有权
标题翻译：制造半导体波形的方法
公开(公告)号：US20100317161A1
公开(公告)日：2010-12-16
申请号：US12862197
申请日：2010-08-24
申请人： Shunpei YAMAZAKI , Akiharu MIYANAGA , Ko INADA , Yuji IWAKI
发明人： Shunpei YAMAZAKI , Akiharu MIYANAGA , Ko INADA , Yuji IWAKI
IPC分类号： H01L21/336 , H01L21/762
CPC分类号： H01L21/76254 , H01L21/2236 , H01L21/26506
摘要： To provide a method for manufacturing an SOI substrate having a single crystal semiconductor layer having a small and uniform thickness over an insulating film. Further, time of adding hydrogen ions is reduced and time of manufacture per SOI substrate is reduced. A bond layer is formed over a surface of a first semiconductor wafer and a separation layer is formed below the bond layer by irradiating the first semiconductor wafer with H3+ ions by an ion doping apparatus. H3+ ions accelerated by high voltage are separated to be three H+ ions at a semiconductor wafer surface, and the H+ ions cannot enter deeply. Therefore, H+ ions are added into a shallower region in the semiconductor wafer at a higher concentration than the case of using a conventional ion implantation method.
摘要翻译：提供一种制造具有在绝缘膜上具有小而均匀厚度的单晶半导体层的SOI衬底的方法。此外，加入氢离子的时间减少，并且每个SOI衬底的制造时间减少。在第一半导体晶片的表面上形成接合层，并且通过用离子掺杂装置用H3 +离子照射第一半导体晶片，在接合层的下方形成分离层。通过高压加速的H3 +离子在半导体晶片表面被分离为三个H +离子，并且H +离子不能深入。因此，与使用常规的离子注入方法的情况相比，将H +离子加入到半导体晶片的较浅的区域中。

6. 发明申请

US20100149851A1 MEMORY DEVICE AND MANUFACTURING METHOD THE SAME 有权
标题翻译：存储器件和制造方法相同
公开(公告)号：US20100149851A1
公开(公告)日：2010-06-17
申请号：US12711333
申请日：2010-02-24
申请人： Yoshinobu ASAMI , Tamae TAKANO , Masayuki SAKAKURA , Ryoji NOMURA , Shunpei YAMAZAKI
发明人： Yoshinobu ASAMI , Tamae TAKANO , Masayuki SAKAKURA , Ryoji NOMURA , Shunpei YAMAZAKI
IPC分类号： G11C5/06 , G11C8/08
CPC分类号： H01L27/1082 , B82Y10/00 , G11C11/34 , G11C13/0014 , G11C2213/79 , H01L23/4828 , H01L27/105 , H01L27/1203 , H01L27/1244 , H01L27/28 , H01L29/458 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.
摘要翻译：可以在没有接触的情况下发送和接收数据的半导体器件部分地受到一些铁路通行证，电子货币卡等的普及; 然而，提供便宜的半导体器件以进一步普及是主要的任务。鉴于上述现有条件，本发明的半导体器件包括具有用于提供便宜的半导体器件的简单结构的存储器及其制造方法。包括在存储器中的存储元件包括含有有机化合物的层，并且将设置在存储元件部分中的TFT的源电极或漏电极用作形成存储元件的位线的导电层。

7. 发明申请

US20060243967A1 LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING LIGHT EMITTING ELEMENT 有权
标题翻译：发光元件和发光装置及制造发光元件的方法
公开(公告)号：US20060243967A1
公开(公告)日：2006-11-02
申请号：US11379322
申请日：2006-04-19
申请人： Ryoji NOMURA , Yasuyuki ARAI , Kaoru KATO , Shunpei YAMAZAKI
发明人： Ryoji NOMURA , Yasuyuki ARAI , Kaoru KATO , Shunpei YAMAZAKI
IPC分类号： H01L29/08
CPC分类号： H01L51/5012 , Y10S428/917
摘要： It is an object of the present invention to provide a light emitting element with high luminous efficiency, less defects, and low voltage, and a light emitting device having such a light emitting element. It is another object of the invention to provide a method of manufacturing such a light emitting element in simpler manner compared with a conventional manner. A light emitting element of the present invention includes a pair of electrodes, a layer containing a composite material, and a light emitting region; wherein the layer containing a composite material contains an organic compound and an inorganic compound; the light emitting region contains a material having a high light emitting property and a material having a high carrier transporting property, and a region containing high concentration of the material having a high light emitting property and a region containing high concentration of the material having a high carrier transporting property are alternately stacked in the light emitting region.
摘要翻译：本发明的目的是提供一种具有高发光效率，较少缺陷和低电压的发光元件，以及具有这种发光元件的发光器件。本发明的另一个目的是提供一种与传统方式相比较简单制造这种发光元件的方法。本发明的发光元件包括一对电极，含有复合材料的层和发光区域; 其中含有复合材料的层含有有机化合物和无机化合物; 发光区域包含具有高发光性的材料和具有高载流子传输性的材料，以及含有高浓度的具有高发光性的材料的区域和含有高浓度的材料的区域高的区域载流子传输性交替堆叠在发光区域中。

8. 发明申请

US20100258792A1 LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE, AND ELECTRONIC APPARATUS 有权
标题翻译：发光元件，发光装置和电子装置
公开(公告)号：US20100258792A1
公开(公告)日：2010-10-14
申请号：US12823675
申请日：2010-06-25
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Ryoji NOMURA
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Ryoji NOMURA
IPC分类号： H01L51/54
CPC分类号： H01L51/52 , H01L51/5048 , Y10S428/917
摘要： It is an object of the present invention to provide a light emitting element with a low driving voltage. In a light emitting element, a first electrode; and a first composite layer, a second composite layer, a light emitting layer, an electron transporting layer, an electron injecting layer, and a second electrode, which are stacked over the first electrode, are included. The first composite layer and the second composite layer each include metal oxide and an organic compound. A concentration of metal oxide in the first composite layer is higher than a concentration of metal oxide in the second composite layer, whereby a light emitting element with a low driving voltage can be obtained. Further, the composite layer is not limited to a two-layer structure. A multi-layer structure can be employed. However, a concentration of metal oxide in the composite layer is gradually higher from the light emitting layer to first electrode side.
摘要翻译：本发明的目的是提供一种具有低驱动电压的发光元件。在发光元件中，第一电极; 并且包括层叠在第一电极上的第一复合层，第二复合层，发光层，电子传输层，电子注入层和第二电极。第一复合层和第二复合层各自包括金属氧化物和有机化合物。第一复合层中的金属氧化物的浓度高于第二复合层中的金属氧化物的浓度，由此可以获得具有低驱动电压的发光元件。此外，复合层不限于两层结构。可以采用多层结构。然而，复合层中的金属氧化物的浓度从发光层逐渐变高到第一电极侧。

9. 发明申请

US20060261728A1 LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF LIGHT EMITTING ELEMENT 有权
标题翻译：发光元件，发光元件及发光元件的制造方法
公开(公告)号：US20060261728A1
公开(公告)日：2006-11-23
申请号：US11383655
申请日：2006-05-16
申请人： Shunpei YAMAZAKI , Ryoji NOMURA , Kaoru KATO
发明人： Shunpei YAMAZAKI , Ryoji NOMURA , Kaoru KATO
IPC分类号： H05B33/00 , H01L51/50
CPC分类号： H01L51/5036 , H01L51/0059 , H01L51/0067 , H01L51/0071 , H01L51/0077 , H01L51/0081
摘要： It is an object of the present invention to provide a light emitting element and a light emitting device having high luminous efficiency. It is a further object of the present invention to provide a method for manufacturing the light emitting element using a simplified method compared with the conventional method. A light emitting element having a light emitting region which includes plural kinds of materials with a high luminous quantum yield, and one or plural kinds of materials with a high carrier transporting property and which has a structure where regions in which the material with a high luminous quantum efficiency is dispersed in a material with a high carrier transporting property and regions in which the concentration of the material with a high carrier transporting property is high are laminated alternately, between a pair of electrodes, is provided.
摘要翻译：本发明的目的是提供一种具有高发光效率的发光元件和发光装置。本发明的另一个目的是提供一种与常规方法相比使用简化方法制造发光元件的方法。具有包含多种具有高发光量子产率的材料的发光区域的发光元件和具有高载流子传输性的一种或多种材料，并且具有其中具有高发光度的材料的区域量子效率分散在具有高载流子传输性质的材料中，并且在一对电极之间交替地层叠具有高载流子传输性的材料的浓度的区域。

10. 发明申请

US20110198585A1 LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE, AND ELECTRONIC APPARATUS 有权
标题翻译：发光元件，发光装置和电子装置
公开(公告)号：US20110198585A1
公开(公告)日：2011-08-18
申请号：US13096088
申请日：2011-04-28
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Ryoji NOMURA
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Ryoji NOMURA
IPC分类号： H01L33/02
CPC分类号： H01L51/52 , H01L51/5048 , Y10S428/917
摘要： It is an object of the present invention to provide a light emitting element with a low driving voltage. In a light emitting element, a first electrode; and a first composite layer, a second composite layer, a light emitting layer, an electron transporting layer, an electron injecting layer, and a second electrode, which are stacked over the first electrode, are included. The first composite layer and the second composite layer each include metal oxide and an organic compound. A concentration of metal oxide in the first composite layer is higher than a concentration of metal oxide in the second composite layer, whereby a light emitting element with a low driving voltage can be obtained. Further, the composite layer is not limited to a two-layer structure. A multi-layer structure can be employed. However, a concentration of metal oxide in the composite layer is gradually higher from the light emitting layer to first electrode side.
摘要翻译：本发明的目的是提供一种具有低驱动电压的发光元件。在发光元件中，第一电极; 并且包括层叠在第一电极上的第一复合层，第二复合层，发光层，电子传输层，电子注入层和第二电极。第一复合层和第二复合层各自包括金属氧化物和有机化合物。第一复合层中的金属氧化物的浓度高于第二复合层中的金属氧化物的浓度，由此可以获得具有低驱动电压的发光元件。此外，复合层不限于两层结构。可以采用多层结构。然而，复合层中的金属氧化物的浓度从发光层逐渐变高到第一电极侧。

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