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1. 发明申请

US20100149851A1 MEMORY DEVICE AND MANUFACTURING METHOD THE SAME 有权
标题翻译：存储器件和制造方法相同
公开(公告)号：US20100149851A1
公开(公告)日：2010-06-17
申请号：US12711333
申请日：2010-02-24
申请人： Yoshinobu ASAMI , Tamae TAKANO , Masayuki SAKAKURA , Ryoji NOMURA , Shunpei YAMAZAKI
发明人： Yoshinobu ASAMI , Tamae TAKANO , Masayuki SAKAKURA , Ryoji NOMURA , Shunpei YAMAZAKI
IPC分类号： G11C5/06 , G11C8/08
CPC分类号： H01L27/1082 , B82Y10/00 , G11C11/34 , G11C13/0014 , G11C2213/79 , H01L23/4828 , H01L27/105 , H01L27/1203 , H01L27/1244 , H01L27/28 , H01L29/458 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.
摘要翻译：可以在没有接触的情况下发送和接收数据的半导体器件部分地受到一些铁路通行证，电子货币卡等的普及; 然而，提供便宜的半导体器件以进一步普及是主要的任务。鉴于上述现有条件，本发明的半导体器件包括具有用于提供便宜的半导体器件的简单结构的存储器及其制造方法。包括在存储器中的存储元件包括含有有机化合物的层，并且将设置在存储元件部分中的TFT的源电极或漏电极用作形成存储元件的位线的导电层。

2. 发明申请

US20120273778A1 MEMORY DEVICE AND MANUFACTURING METHOD THE SAME 有权
标题翻译：存储器件和制造方法相同
公开(公告)号：US20120273778A1
公开(公告)日：2012-11-01
申请号：US13546013
申请日：2012-07-11
申请人： Yoshinobu ASAMI , Tamae TAKANO , Masayuki SAKAKURA , Ryoji NOMURA , Shunpei YAMAZAKI
发明人： Yoshinobu ASAMI , Tamae TAKANO , Masayuki SAKAKURA , Ryoji NOMURA , Shunpei YAMAZAKI
IPC分类号： H01L29/12
CPC分类号： H01L27/1082 , B82Y10/00 , G11C11/34 , G11C13/0014 , G11C2213/79 , H01L23/4828 , H01L27/105 , H01L27/1203 , H01L27/1244 , H01L27/28 , H01L29/458 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.
摘要翻译：可以在没有接触的情况下发送和接收数据的半导体器件部分地受到一些铁路通行证，电子货币卡等的普及; 然而，提供便宜的半导体器件以进一步普及是主要的任务。鉴于上述现有条件，本发明的半导体器件包括具有用于提供便宜的半导体器件的简单结构的存储器及其制造方法。包括在存储器中的存储元件包括含有有机化合物的层，并且将设置在存储元件部分中的TFT的源电极或漏电极用作形成存储元件的位线的导电层。

3. 发明申请

US20110043513A1 DEVICE SUBSTRATE, LIGHT EMITTING DEVICE AND DRIVING METHOD OF LIGHT EMITTING DEVICE 有权
标题翻译：装置基板，发光装置和发光装置的驱动方法
公开(公告)号：US20110043513A1
公开(公告)日：2011-02-24
申请号：US12915086
申请日：2010-10-29
申请人： Shunpei YAMAZAKI , Masayuki SAKAKURA , Mitsuaki OSAME , Takashi HAMADA , Tamae TAKANO , Yu YAMAZAKI , Aya ANZAI
发明人： Shunpei YAMAZAKI , Masayuki SAKAKURA , Mitsuaki OSAME , Takashi HAMADA , Tamae TAKANO , Yu YAMAZAKI , Aya ANZAI
IPC分类号： G09G5/00 , G09G3/20
CPC分类号： H01L27/1214 , G09G3/3233 , G09G3/3266 , G09G3/3291 , G09G2300/0426 , G09G2300/0814 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2320/0233 , H01L27/3262 , H01L2251/5323
摘要： A light emitting device comprising a light emitting element and a first transistor and a second transistor controlling current to be supplied to the light emitting element in a pixel; the first transistor is normally-on; the second transistor is normally-off; a channel length of the first transistor is longer than a channel width thereof; a channel length of the second transistor is equal to or shorter than a channel length thereof; gate electrodes of the first transistor and the second transistor are connected to each other; the first transistor and the second transistor have the same polarity; and the light emitting element, the first transistor and the second transistor are all connected in series.
摘要翻译：一种发光器件，包括发光元件和第一晶体管，以及第二晶体管，控制要在像素中提供给所述发光元件的电流; 第一个晶体管正常工作; 第二晶体管正常断开; 第一晶体管的沟道长度比沟道宽度长; 第二晶体管的沟道长度等于或短于其沟道长度; 第一晶体管和第二晶体管的栅电极彼此连接; 第一晶体管和第二晶体管具有相同的极性; 并且发光元件，第一晶体管和第二晶体管都全部串联连接。

4. 发明申请

US20120299889A1 DEVICE SUBSTRATE, LIGHT EMITTING DEVICE AND DRIVING METHOD OF LIGHT EMITTING DEVICE 有权
标题翻译：装置基板，发光装置和发光装置的驱动方法
公开(公告)号：US20120299889A1
公开(公告)日：2012-11-29
申请号：US13570478
申请日：2012-08-09
申请人： Shunpei YAMAZAKI , Masayuki SAKAKURA , Mitsuaki OSAME , Takashi HAMADA , Tamae TAKANO , Yu YAMAZAKI , Aya ANZAI
发明人： Shunpei YAMAZAKI , Masayuki SAKAKURA , Mitsuaki OSAME , Takashi HAMADA , Tamae TAKANO , Yu YAMAZAKI , Aya ANZAI
IPC分类号： G09G5/00 , H01L27/15
CPC分类号： H01L27/1214 , G09G3/3233 , G09G3/3266 , G09G3/3291 , G09G2300/0426 , G09G2300/0814 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2320/0233 , H01L27/3262 , H01L2251/5323
摘要： A light emitting device comprising a light emitting element and a first transistor and a second transistor controlling current to be supplied to the light emitting element in a pixel; the first transistor is normally-on; the second transistor is normally-off; a channel length of the first transistor is longer than a channel width thereof; a channel length of the second transistor is equal to or shorter than a channel length thereof; gate electrodes of the first transistor and the second transistor are connected to each other; the first transistor and the second transistor have the same polarity; and the light emitting element, the first transistor and the second transistor are all connected in series.
摘要翻译：一种发光器件，包括发光元件和第一晶体管，以及第二晶体管，控制要在像素中提供给所述发光元件的电流; 第一个晶体管正常工作; 第二晶体管正常断开; 第一晶体管的沟道长度比沟道宽度长; 第二晶体管的沟道长度等于或短于其沟道长度; 第一晶体管和第二晶体管的栅电极彼此连接; 第一晶体管和第二晶体管具有相同的极性; 并且发光元件，第一晶体管和第二晶体管都全部串联连接。

5. 发明申请

US20120248470A1 DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20120248470A1
公开(公告)日：2012-10-04
申请号：US13486017
申请日：2012-06-01
申请人： Shunpei YAMAZAKI , Satoshi MURAKAMI , Motomu KURATA , Hiroyuki HATA , Mitsuhiro ICHIJO , Takashi OHTSUKI , Aya ANZAI , Masayuki SAKAKURA
发明人： Shunpei YAMAZAKI , Satoshi MURAKAMI , Motomu KURATA , Hiroyuki HATA , Mitsuhiro ICHIJO , Takashi OHTSUKI , Aya ANZAI , Masayuki SAKAKURA
IPC分类号： H01L33/08
CPC分类号： H04N5/655 , G06F3/02 , H01L27/12 , H01L27/1214 , H01L27/1222 , H01L27/124 , H01L27/1248 , H01L27/3244 , H01L27/3258 , H01L27/3276 , H01L33/60 , H01L51/0005 , H01L51/5246 , H01L51/56 , H01L2224/4847 , H01L2227/323 , H01L2251/5323 , H04N5/642
摘要： The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle shape. A wiring or the like is formed to be in contact with the insulating layer and thus the coverage of the wiring or the like is enhanced. In addition, deterioration of a light-emitting element due to contaminants such as water can be prevented by sealing a layer including an organic material that has water permeability in a display device with a sealing material. Since the sealing material is formed in a portion of a driver circuit region in the display device, the frame margin of the display device can be narrowed.
摘要翻译：本发明提供了一种以高成本低成本制造高度可靠的显示装置的方法。根据本发明，由绝缘层覆盖由于接触开口而产生的台阶，以减小台阶，并且被加工成平缓的形状。布线等形成为与绝缘层接触，从而增强布线等的覆盖。此外，通过用包封材料密封包括显示装置中具有透水性的有机材料的层，可以防止由诸如水等污染物引起的发光元件的劣化。由于密封材料形成在显示装置的驱动电路区域的一部分中，所以显示装置的边框可以变窄。

6. 发明申请

US20120032159A1 DISPLAY DEVICE AND MANUFACTURING METHOD OF DISPLAY DEVICE 有权
标题翻译：显示装置的显示装置和制造方法
公开(公告)号：US20120032159A1
公开(公告)日：2012-02-09
申请号：US13277478
申请日：2011-10-20
申请人： Shunpei YAMAZAKI , Masayuki SAKAKURA , Masaharu NAGAI , Yutaka MATSUDA , Kengo AKIMOTO , Gen FUJII , Tetsuji YAMAGUCHI
发明人： Shunpei YAMAZAKI , Masayuki SAKAKURA , Masaharu NAGAI , Yutaka MATSUDA , Kengo AKIMOTO , Gen FUJII , Tetsuji YAMAGUCHI
IPC分类号： H01L51/52
CPC分类号： H01L51/529 , H01L27/12 , H01L27/1214 , H01L27/3246 , H01L27/3248 , H01L27/3258 , H01L27/3276 , H01L29/66757 , H01L51/5206 , H01L51/5246 , H01L2251/5315 , H01L2251/5323
摘要： It is an object of the present invention to provide a reliable display device and a method for manufacturing the display device reducing the number of manufacturing steps, and with higher yield. A display device according to the invention includes a plurality of display elements each having a first electrode, a layer containing an organic compound, and a second electrode. The display device further includes a heat-resistant planarizing film over a substrate having an insulating surface, a first electrode over the heat-resistant, planarizing film, a wiring covering an end portion of the first electrode, a partition wall covering the end portion of first electrode and the wiring, a layer containing an organic compound, and a second electrode over the layer containing an organic compound.
摘要翻译：本发明的目的是提供一种可靠的显示装置和用于制造显示装置的方法，其减少制造步骤的数量，并且以更高的产量。根据本发明的显示装置包括多个显示元件，每个显示元件具有第一电极，含有有机化合物的层和第二电极。显示装置还包括在具有绝缘表面的基板上的耐热平面化膜，在耐热平坦化膜上的第一电极，覆盖第一电极的端部的布线，覆盖第一电极的端部的分隔壁第一电极和布线，含有有机化合物的层，以及包含有机化合物的层上的第二电极。

7. 发明申请

US20110180801A1 LIGHT EMITTING APPARATUS AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20110180801A1
公开(公告)日：2011-07-28
申请号：US13082104
申请日：2011-04-07
申请人： Shunpei YAMAZAKI , Satoshi MURAKAMI , Masayuki SAKAKURA , Toru TAKAYAMA
发明人： Shunpei YAMAZAKI , Satoshi MURAKAMI , Masayuki SAKAKURA , Toru TAKAYAMA
IPC分类号： H01L51/52
CPC分类号： H01L27/3244 , H01L27/12 , H01L27/1248 , H01L27/3246 , H01L27/3258 , H01L29/16 , H01L29/66757 , H01L29/78621 , H01L29/78645 , H01L29/78675 , H01L29/78696 , H01L51/5008 , H01L51/524 , H01L51/5253 , H01L51/56 , H01L2227/323 , H01L2251/566
摘要： The purpose of the invention is to improve reliability of a light emitting apparatus comprising TFTs and organic light emitting elements. The light emitting apparatus according to the invention having thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode layer formed on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode layer and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer formed on the upper surface and side surface of the second organic insulation layer and having an opening over the anode layer, an organic compound layer formed in contact with the anode layer and the fourth inorganic insulation layer and containing light emitting material, and a cathode layer formed in contact with the organic compound layer containing the light emitting material, wherein the third inorganic insulation layer and the fourth inorganic insulation layer are formed with silicon nitride or aluminum nitride.
摘要翻译：本发明的目的是提高包括TFT和有机发光元件的发光装置的可靠性。根据本发明的具有薄膜晶体管和发光元件的发光装置包括：栅电极上的第二无机绝缘层，第二无机绝缘层上的第一有机绝缘层，第一有机绝缘层上的第三无机绝缘层，形成在第三无机绝缘层上的阳极层，第二有机绝缘层与阳极层的端部重叠并且具有35度至45度的倾斜角度;形成在第二有机绝缘层的上表面和侧表面上并且在阳极层上具有开口的第四无机绝缘层，有机化合物形成为与阳极层和第四无机绝缘层接触且含有发光材料的层，以及与含有发光材料的有机化合物层接触形成的阴极层，其中第三无机绝缘层和第四无机绝缘层由氮化硅或氮化铝形成。

8. 发明申请

US20110084264A1 OXIDE SEMICONDUCTOR LAYER AND SEMICONDUCTOR DEVICE 有权
标题翻译：氧化物半导体层和半导体器件
公开(公告)号：US20110084264A1
公开(公告)日：2011-04-14
申请号：US12897160
申请日：2010-10-04
申请人： Shunpei YAMAZAKI , Masayuki SAKAKURA , Akiharu MIYANAGA , Masahiro TAKAHASHI , Takuya HIROHASHI , Takashi SHIMAZU
发明人： Shunpei YAMAZAKI , Masayuki SAKAKURA , Akiharu MIYANAGA , Masahiro TAKAHASHI , Takuya HIROHASHI , Takashi SHIMAZU
IPC分类号： H01L29/12
CPC分类号： H01L29/7869 , H01L29/78606 , H01L29/78618 , H01L29/78693 , H01L29/78696
摘要： An object is to provide an oxide semiconductor layer having a novel structure which is preferably used for a semiconductor device. Alternatively, another object is to provide a semiconductor device using an oxide semiconductor layer having the novel structure. An oxide semiconductor layer includes an amorphous region which is mainly amorphous and a crystal region containing crystal grains of In2Ga2ZnO7 in a vicinity of a surface, in which the crystal grains are oriented so that the c-axis is almost vertical with respect to the surface. Alternatively, a semiconductor device uses such an oxide semiconductor layer.
摘要翻译：目的在于提供一种具有新的结构的氧化物半导体层，其优选用于半导体器件。或者，另一个目的是提供一种使用具有新颖结构的氧化物半导体层的半导体器件。氧化物半导体层包括主要为非晶质的非晶区域和在表面附近含有In2Ga2ZnO7晶体的晶体区域，其中晶粒取向为使得c轴相对于表面几乎垂直。或者，半导体器件使用这种氧化物半导体层。

9. 发明申请

US20080099664A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20080099664A1
公开(公告)日：2008-05-01
申请号：US11928912
申请日：2007-10-30
申请人： Shunpei YAMAZAKI , Masahiro KATAYAMA , Yoshiaki OIKAWA , Atsushi HIROSE , Masayuki SAKAKURA
发明人： Shunpei YAMAZAKI , Masahiro KATAYAMA , Yoshiaki OIKAWA , Atsushi HIROSE , Masayuki SAKAKURA
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/1443 , H01L27/1214 , H01L27/1266 , H01L31/02005 , H01L31/02162 , H01L31/022408 , H01L31/02327 , H01L31/1055 , H01L31/1892 , H01M10/46 , H03F3/08 , Y02E10/50
摘要： A semiconductor device including a first element including a photodiode and an amplifier circuit which amplifies output current of the photodiode, over a first insulating film; and a second element including a color filter and an overcoat layer over the color filter over a second insulating film is manufactured. The first element and the second element are attached to each other by bonding the first insulating film and the second insulating film with a bonding material. Further, the amplifier circuit is a current mirror circuit including a thin film transistor. Still further, a color film may be used instead of a color filter.
摘要翻译：一种半导体器件，包括在第一绝缘膜上包括光电二极管的第一元件和放大光电二极管的输出电流的放大器电路; 并且制造在第二绝缘膜上的在滤色器上方包括滤色器和外涂层的第二元件。第一元件和第二元件通过用接合材料接合第一绝缘膜和第二绝缘膜而彼此附接。此外，放大器电路是包括薄膜晶体管的电流镜电路。此外，可以使用彩色胶片代替滤色器。

10. 发明申请

US20110210325A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110210325A1
公开(公告)日：2011-09-01
申请号：US12871148
申请日：2010-08-30
申请人： Masayuki SAKAKURA , Yoshiaki OIKAWA , Shunpei YAMAZAKI , Junichiro SAKATA , Masashi TSUBUKU , Kengo AKIMOTO , Miyuki HOSOBA
发明人： Masayuki SAKAKURA , Yoshiaki OIKAWA , Shunpei YAMAZAKI , Junichiro SAKATA , Masashi TSUBUKU , Kengo AKIMOTO , Miyuki HOSOBA
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L27/124 , G02F1/134309 , G02F1/13454 , G02F1/1368 , G02F2202/10 , H01L27/1225 , H01L27/1255
摘要： The semiconductor device includes a driver circuit portion including a driver circuit and a pixel portion including a pixel. The pixel includes a gate electrode layer having a light-transmitting property, a gate insulating layer, a source electrode layer and a drain electrode layer each having a light-transmitting property provided over the gate insulating layer, an oxide semiconductor layer covering top surfaces and side surfaces of the source electrode layer and the drain electrode layer and provided over the gate electrode layer with the gate insulating layer therebetween, a conductive layer provided over part of the oxide semiconductor layer and having a lower resistance than the source electrode layer and the drain electrode layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer.
摘要翻译：半导体器件包括驱动器电路部分，其包括驱动器电路和包括像素的像素部分。像素包括具有透光性的栅极电极层，栅极绝缘层，源极电极层和漏极电极层，其各自具有设置在栅极绝缘层上的透光性，覆盖顶表面的氧化物半导体层和源极电极层和漏极电极层的侧面，并且在栅电极层之间设置有栅极绝缘层，导电层设置在氧化物半导体层的一部分上，并且具有比源电极层和漏极电极层和与氧化物半导体层的一部分接触的氧化物绝缘层。

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