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1. 发明授权

US4280461A Contactless ignition system for internal combustion engines 失效
标题翻译：内燃机非接触式点火系统
公开(公告)号：US4280461A
公开(公告)日：1981-07-28
申请号：US082755
申请日：1979-10-09
申请人： Ryoichi Okuda , Tomoatsu Makino , Katsuteru Miwa
发明人： Ryoichi Okuda , Tomoatsu Makino , Katsuteru Miwa
IPC分类号： F02P7/03 , F02P3/04 , F02P3/045 , F02P3/05 , F02P5/155 , F02P5/04
CPC分类号： F02P5/155 , Y02T10/46
摘要： A contactless ignition system for internal combustion engines controls the closing angle of an engine in response to a signal derived by comparing the AC output of an alternator operated in synchronism with the rotation of the engine with the output of a bias-up circuit adapted to supply a DC bias signal which varies with the speed of the engine. The outputs of the alternator and the bias-up circuit are applied to a voltage comparison circuit and the voltage comparison circuit applies to the bias-up circuit a signal having a frequency which is proportional to the number of revolutions of engine. In response to the signal the bias-up circuit generates a signal proportional to the engine speed and this signal is converted through a non-linear circuit of the bias-up circuit into a DC bias signal whose rate of change is small at low engine speeds but increases with an increase in speed at higher engine speeds.
摘要翻译：用于内燃机的非接触式点火系统响应于通过将与发动机的旋转同步操作的交流发电机的交流输出与适于供给的偏压升压电路的输出进行比较而导致的信号来控制发动机的闭合角度直流偏置信号随着发动机的速度而变化。交流发电机和偏置上升电路的输出被施加到电压比较电路，并且电压比较电路向偏置上升电路施加具有与发动机转数成比例的频率的信号。响应于信号，偏置上升电路产生与发动机转速成比例的信号，并且该信号通过偏置上升电路的非线性电路转换为在低发动机转速下变化率小的直流偏置信号但在较高的发动机转速下随着速度的增加而增加。

2. 发明授权

US4225796A Frequency-to-current conversion circuit 失效
标题翻译：频率到电流转换电路
公开(公告)号：US4225796A
公开(公告)日：1980-09-30
申请号：US967497
申请日：1978-12-07
申请人： Tomoatsu Makino , Yoshio Hirano , Katsuteru Miwa
发明人： Tomoatsu Makino , Yoshio Hirano , Katsuteru Miwa
IPC分类号： G01D5/12 , G01R23/06 , G08C19/02 , H03K9/06 , H03K1/08
CPC分类号： G01R23/06
摘要： A frequency-to-current conversion circuit comprises a charge/discharge circuit for charging or discharging with a first constant current in synchronism with each cycle of an input pulse signal having a varying frequency, a voltage comparison circuit for detecting a predetermined voltage attained by the charge/discharge circuit at the expiration of a predetermined time interval dependent on the value of the first constant current from the beginning of the charge or discharge, and an output circuit for receiving the output signal of the voltage comparison circuit as well as the input pulse signal to generate a second constant current during the predetermined time interval in synchronism with each cycle of the input pulse signal.
摘要翻译：频率 - 电流转换电路包括用于与具有变化频率的输入脉冲信号的每个周期同步地以第一恒定电流进行充电或放电的充电/放电电路，用于检测由所述电压获得的预定电压的电压比较电路充电/放电电路根据从充电或放电开始的第一恒定电流的值预定的时间间隔期满;以及输出电路，用于接收电压比较电路的输出信号以及输入脉冲信号以在与输入脉冲信号的每个周期同步的预定时间间隔期间产生第二恒定电流。

3. 发明授权

US06717785B2 Semiconductor switching element driving circuit 有权
标题翻译：半导体开关元件驱动电路
公开(公告)号：US06717785B2
公开(公告)日：2004-04-06
申请号：US09819715
申请日：2001-03-29
申请人： Yutaka Fukuda , Ryoichi Okuda , Tomoatsu Makino , Kenji Yagi , Yukio Tsuzuki
发明人： Yutaka Fukuda , Ryoichi Okuda , Tomoatsu Makino , Kenji Yagi , Yukio Tsuzuki
IPC分类号： H02H308
CPC分类号： H03K17/0828 , H03K17/168
摘要： A semiconductor switching element driving circuit comprises an overcurrent limiting circuit which instantaneously drops a voltage of a gate terminal of an IGBT when a main IGBT current becomes larger than a predetermined level i1. An overcurrent protection circuit which first decreases the main IGBT current at a first inclination when the main IGBT current becomes larger than the other level i2 lower than the i1 and then reduces the main IGBT current at a steep second inclination when it becomes smaller than another level i3.
摘要翻译：半导体开关元件驱动电路包括当主IGBT电流变得大于预定电平i1时瞬时降低IGBT的栅极端子的电压的过电流限制电路。一个过电流保护电路，当主IGBT电流变得大于比i1低的另一个电平i2时，首先降低主IGBT电流，然后当其变得小于另一个电平时，以较陡峭的第二倾斜度降低主IGBT电流 i3。

4. 发明授权

US4492213A Ignition system for internal combustion engines 失效
标题翻译：内燃机点火系统
公开(公告)号：US4492213A
公开(公告)日：1985-01-08
申请号：US577316
申请日：1984-02-06
申请人： Noboru Yamamoto , Ryoichi Okuda , Tomoatsu Makino
发明人： Noboru Yamamoto , Ryoichi Okuda , Tomoatsu Makino
IPC分类号： F02P3/05 , F02P15/12 , F02P1/00
CPC分类号： F02P3/051 , F02P15/12
摘要： An improved ignition system for internal combustion engines including a constant current control circuit for effecting constant current control of an ignition coil primary current, further includes a compensating circuit for controlling a reference voltage, which is to be compared with a detection value of the ignition coil primary current, at a constant value irrespective of a decrease of a power supply voltage, thereby controlling the ignition coil primary current at a given value over a wide range of variations of the power supply voltage including a considerable decrease thereof.
摘要翻译：一种用于内燃机的改进的点火系统，包括用于实现点火线圈初级电流的恒定电流控制的恒流控制电路，还包括用于控制参考电压的补偿电路，该补偿电路将与点火线圈的检测值进行比较初级电流，与电源电压降低无关，从而在包括其相当大的降低的电源电压的宽范围变化的范围内将点火线圈一次电流控制在给定值。

5. 发明授权

US4434779A Circuit for controlling the primary dwell time of ignition transformer 失效
标题翻译：控制点火变压器初级停留时间的电路
公开(公告)号：US4434779A
公开(公告)日：1984-03-06
申请号：US352454
申请日：1982-02-25
申请人： Norboru Yamamoto , Tomoatsu Makino , Ryoichi Okuda
发明人： Norboru Yamamoto , Tomoatsu Makino , Ryoichi Okuda
IPC分类号： F02P3/045 , F02P1/00
CPC分类号： F02P3/0453
摘要： A circuit arrangement for controlling the duration of a current generated in the primary winding of an ignition transformer comprises a ramp generator responsive to the ignition timing or an internal combustion engine for generating a ramp voltage having a constant peak value and a variable rate of increase in voltage as a function of the speed of the engine. A pulse generating means is provided for successively generating a pulse of which the pulse height is substantially equal to the peak value of the ramp voltage and of which the pulse duration is variable inversely as a function of the speed of the engine. To the pulse generating means is coupled an integrator for integrating the pulses supplied thereto to generate an integrated output. The output of the integrator is supplied to a comparator for making a comparison with the instantaneous value of the ramp voltage to generate an ignition current pulse having a duration corresponding to the difference between the compared input variables.
摘要翻译：用于控制在点火变压器的初级绕组中产生的电流的持续时间的电路装置包括响应于点火正时的斜坡发生器或用于产生具有恒定峰值和可变增加速率的斜坡电压的内燃机电压作为发动机速度的函数。提供脉冲发生装置，用于连续地产生脉冲高度基本上等于斜坡电压的峰值的脉冲，并且其脉冲持续时间作为发动机速度的函数可逆地变化。与脉冲产生装置相耦合的积分器用于积分提供给其的脉冲以产生积分输出。积分器的输出被提供给比较器，用于与斜坡电压的瞬时值进行比较，以产生具有对应于比较的输入变量之间的差的持续时间的点火电流脉冲。

6. 发明授权

US4424704A Knock detecting apparatus for internal combustion engine 失效
标题翻译：内燃机爆震检测装置
公开(公告)号：US4424704A
公开(公告)日：1984-01-10
申请号：US328798
申请日：1981-12-08
申请人： Noboru Yamamoto , Tomoatsu Makino , Ryoichi Okuda , Hiroshi Sakurai
发明人： Noboru Yamamoto , Tomoatsu Makino , Ryoichi Okuda , Hiroshi Sakurai
IPC分类号： F02P5/152 , F02P5/153 , G01H17/00 , G01L23/22 , G01M15/00
CPC分类号： G01L23/225 , F02P5/152 , Y02T10/46
摘要： In a knock detecting apparatus for an internal combustion engine, a comparator receives at one input a knock detection signal from a knock sensor and at the other input a knock discrimination level signal produced by a knock discrimination level generator in accordance with the knock detection signal of the knock sensor. A mask circuit inhibits the passage of the comparison output signal of the comparator during a period in which a number of noises are generated from the internal combustion engine and at the same time interrupts the operation of the knock discrimination level generator.
摘要翻译：在用于内燃机的爆震检测装置中，比较器在一个输入端处接收来自爆震传感器的爆震检测信号，并在另一输入端接收由爆震识别电平发生器根据爆震检测信号爆震传感器。掩模电路在从内燃机产生噪声的时间段期间阻止比较器的比较输出信号的通过，并且同时中断爆震识别电平发生器的操作。

7. 发明申请

US20070013412A1 Semiconductor device having super junction structure and method for manufacturing the same 有权
标题翻译：具有超结结构的半导体器件及其制造方法
公开(公告)号：US20070013412A1
公开(公告)日：2007-01-18
申请号：US11472547
申请日：2006-06-22
申请人： Shoichi Yamauchi , Tomoatsu Makino , Makoto Kuwahara , Yoshiyuki Hattori
发明人： Shoichi Yamauchi , Tomoatsu Makino , Makoto Kuwahara , Yoshiyuki Hattori
IPC分类号： H03K19/091
CPC分类号： H01L29/7811 , H01L29/0634 , H01L29/1095 , H01L29/402 , H01L29/41741 , H01L29/66734 , H01L29/7813 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: a cell region; a terminal region; a lower semiconductor layer; a intermediate semiconductor layer on the lower semiconductor layer including a super junction structure; a terminal upper semiconductor layer on the intermediate semiconductor layer; a terminal contact semiconductor region on a surface portion of the terminal upper semiconductor layer adjacent to the cell region; an insulation layer on the terminal upper semiconductor layer having a first part adjacent to the cell region with a small thickness and a second part adjacent to the first part with a large thickness; and a conductive layer in the cell region and a part of the terminal region, the conductive layer extending from the cell region to the part of the terminal region beyond the first part of the insulation layer.
摘要翻译：半导体器件包括：单元区域; 终端区域下半导体层; 包括超级结结构的下半导体层上的中间半导体层; 中间半导体层上的端子上半导体层; 在所述端子上半导体层的与所述单元区域相邻的表面部分上的端子接触半导体区域; 端子上半导体层上的绝缘层具有邻近具有小厚度的单元区域的第一部分和与厚度较大的第一部分相邻的第二部分; 以及在所述单元区域和所述端子区域的一部分中的导电层，所述导电层从所述单元区域延伸到所述绝缘层的所述第一部分之外的所述端子区域的所述部分。

8. 发明授权

US4397290A Supply-voltage-compensated contactless ignition system for internal combustion engines 失效
标题翻译：内燃机用电压补偿非接触点火系统
公开(公告)号：US4397290A
公开(公告)日：1983-08-09
申请号：US256833
申请日：1981-04-23
申请人： Toshio Tanaka , Tomoatsu Makino
发明人： Toshio Tanaka , Tomoatsu Makino
IPC分类号： F02P3/04 , F02P3/045
CPC分类号： F02P3/0453
摘要： A supply-voltage-compensated contactless ignition system for internal combustion engines, which includes input transistor operable in response to an engine ignition signal so as to control the operation of a power transistor to control the energization of an ignition coil with the operating level of the input transistors being varied with variation in the supply voltage, further includes a current mirror circuit having first and second current shunt paths including first and second transistors which are connected in parallel with a voltage clamping device such that the each current path substantially the same amount of current when the supply voltage is normal and that one of the current paths shunts a current increased over that of the other in response to a rise of the supply voltage beyond a predetermined value, and includes a shunt device for shunting the increased current to the input transistors.
摘要翻译：一种用于内燃机的供应电压补偿的非接触式点火系统，其包括可响应于发动机点火信号操作的输入晶体管，以便控制功率晶体管的操作，以控制点火线圈的通电，输入晶体管随着电源电压的变化而变化，还包括具有第一和第二电流分流路径的电流镜电路，其包括与电压钳位装置并联连接的第一和第二晶体管，使得每个电流路径基本上相同当电源电压正常并且电流路径中的一个分流电流响应于电源电压超过预定值而增加到另一个电流时，并且包括用于将增加的电流分流到输入端的分流装置晶体管。

9. 发明授权

US07601603B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07601603B2
公开(公告)日：2009-10-13
申请号：US11094782
申请日：2005-03-31
申请人： Shoichi Yamauchi , Hitoshi Yamaguchi , Tomoatsu Makino , Syouji Nogami , Tomonori Yamaoka
发明人： Shoichi Yamauchi , Hitoshi Yamaguchi , Tomoatsu Makino , Syouji Nogami , Tomonori Yamaoka
IPC分类号： H01L21/20
CPC分类号： H01L29/7813 , H01L21/823487 , H01L29/0634 , H01L29/7811
摘要： A method for manufacturing a semiconductor device includes the steps of: forming a trench in a semiconductor substrate; and forming an epitaxial film on the substrate including a sidewall and a bottom of the trench so that the epitaxial film is filled in the trench. The step of forming the epitaxial film includes a final step before the trench is filled with the epitaxial film. The final step has a forming condition of the epitaxial film in such a manner that the epitaxial film to be formed on the sidewall of the trench has a growth rate at an opening of the trench smaller than a growth rate at a position of the trench, which is deeper than the opening of the trench.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在半导体衬底中形成沟槽; 以及在包括沟槽的侧壁和底部的衬底上形成外延膜，使得外延膜填充在沟槽中。形成外延膜的步骤包括在沟槽被外延膜填充之前的最后步骤。最终步骤具有外延膜的形成条件，使得形成在沟槽的侧壁上的外延膜在沟槽的开口处的生长速率小于沟槽位置处的生长速率，其比沟槽的开口更深。

10. 发明申请

US20060043478A1 Semiconductor device having super junction structure and method for manufacturing the same 有权
标题翻译：具有超结结构的半导体器件及其制造方法
公开(公告)号：US20060043478A1
公开(公告)日：2006-03-02
申请号：US11211524
申请日：2005-08-26
申请人： Hitoshi Yamaguchi , Tomoatsu Makino , Yoshiyuki Hattori , Kyoko Okada
发明人： Hitoshi Yamaguchi , Tomoatsu Makino , Yoshiyuki Hattori , Kyoko Okada
IPC分类号： H01L29/76
CPC分类号： H01L29/7811 , H01L29/0634 , H01L29/0696 , H01L29/41741 , H01L29/66734 , H01L29/7813
摘要： A semiconductor device includes: a center region; a periphery region; and a semiconductor layer including pairs of a first region having a first impurity amount and a second region having a second impurity amount. The first and the second regions are alternately aligned in a plane. The periphery region includes an utmost outer and an utmost inner periphery pairs. The utmost outer periphery pair has a difference between the second and the first impurity amounts, which is smaller than a maximum difference in the periphery region. The utmost inner periphery pair has a difference between the second and the first impurity amounts, which is larger than a difference in the center region.
摘要翻译：半导体器件包括：中心区域; 外围区域以及包括具有第一杂质量的第一区域和具有第二杂质量的第二区域的对的半导体层。第一和第二区域在平面中交替排列。周边区域包括最外部的和最外部的内周边对。最外周边对具有第二和第一杂质量之间的差异，其小于周边区域的最大差异。最大的内周对具有第二和第一杂质量之间的差异，其大于中心区域的差。

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