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    • 2. 发明申请
    • Method and apparatus for reviewing defects
    • 检查缺陷的方法和装置
    • US20070201739A1
    • 2007-08-30
    • US11704350
    • 2007-02-09
    • Ryo NakagakiMasaki KuriharaToshifumi Honda
    • Ryo NakagakiMasaki KuriharaToshifumi Honda
    • G06K9/00
    • G06T7/0006G06K9/6256G06T7/0004G06T7/001G06T2207/10056G06T2207/10061G06T2207/30148
    • In apparatuses for automatically acquiring and also for automatically classifying images of defects present on a sample such as a semiconductor wafer, a classifying system is provided which are capable of readily accepting even such a case that a large number of classification classes are produced based upon a request issued by a user, and also even such a case that a basis of the classification class is changed in a high frequency. When the user defines the classification classes, a device for designating attributes owned by the respective classification classes is provided. The classifying system automatically changes a connecting mode between an internally-provided rule-based classifier and an example-based classifier, so that such a classifying system which is fitted to the classification basis of the user is automatically constructed.
    • 在用于自动获取并且还自动分类诸如半导体晶片的样本上存在的缺陷的图像的设备中,提供了能够容易地接受甚至基于以下情况产生大量分类等级的情况的分类系统 由用户发出的请求,甚至是分类等级的基础被高频地改变的情况。 当用户定义分类类时,提供用于指定由各个分级类所拥有的属性的设备。 分类系统自动地在内部提供的基于规则的分类器和基于示例的分类器之间改变连接模式,从而自动构建适合用户分类基础的这样的分类系统。
    • 3. 发明申请
    • Method and apparatus for reviewing defects of semiconductor device
    • 检查半导体器件缺陷的方法和装置
    • US20070031026A1
    • 2007-02-08
    • US11488636
    • 2006-07-19
    • Masaki KuriharaToshifumi HondaRyo Nakagaki
    • Masaki KuriharaToshifumi HondaRyo Nakagaki
    • G06K9/00
    • G06T7/001G06T2207/30148H01J37/222H01J37/28H01J2237/2817
    • A method and apparatus for reviewing defects of a semiconductor device is provided which involves detecting a defect on a SEM image taken at low magnification, and reviewing the defect on a SEM image taken at high magnification, and which can review a lot of defects in a short period of time thereby to improve the efficiency of defect review. In the present invention, the method for reviewing defects of a semiconductor device includes the steps of obtaining an image including a defect on the semiconductor device detected by a detection device by use of a scanning electron microscope at a first magnification, making a reference image from the image including the defect obtained at the first magnification, detecting the defect by comparing the image including the defect obtained at the first magnification to the reference image made from the image including the defect at the first magnification, and taking an image of the detected defect at a second magnification that is larger than the first magnification.
    • 提供了一种用于检查半导体器件缺陷的方法和装置,其涉及检测在低放大倍率下拍摄的SEM图像上的缺陷,并且以高倍放大倍数检查SEM图像上的缺陷,并且可以检查在 短时间内可以提高缺陷检查的效率。 在本发明中,用于检查半导体器件的缺陷的方法包括以下步骤:通过使用扫描电子显微镜以第一放大率获得由检测装置检测的半导体器件上的缺陷的图像,从而 所述图像包括在第一放大处获得的缺陷,通过将包括在第一放大获得的缺陷的图像与由包含第一放大率的缺陷构成的图像进行比较的图像进行比较来检测缺陷,并且获取检测到的缺陷的图像 在大于第一放大率的第二放大倍率下。
    • 5. 发明申请
    • SEM-TYPE REVIEWING APPARATUS AND A METHOD FOR REVIEWING DEFECTS USING THE SAME
    • SEM型检查装置和使用该方法检查缺陷的方法
    • US20080067371A1
    • 2008-03-20
    • US11747253
    • 2007-05-11
    • Masaki KuriharaToshifumi HondaRyo Nakagaki
    • Masaki KuriharaToshifumi HondaRyo Nakagaki
    • G01N23/00
    • G01N21/9501G01N2223/053G01N2223/6116
    • In order to achieve high throughput in a SEM-type defect-reviewing apparatus and method for automatically acquiring images of review defects present on samples, including: a cell comparison step subdivided into the steps of (a) providing a defect detection success ratio or defect detection success map due to at least a cell comparison scheme for each wafer or each chip, (b) selecting a review sequence of either the cell comparison scheme or a die comparison scheme on the basis of the provided defect detection success ratio or defect detection success map, (c) if the cell comparison scheme is selected, judging whether detection of the review defect is possible by executing the cell comparison scheme; and a die comparison step in which die comparison is performed if the judgment result indicates that the detection of the review defect is impossible, or if the die comparison scheme is selected in the selection step.
    • 为了在SEM型缺陷检查装置中实现高通量,以及用于自动获取样品上存在的检查缺陷的图像的方法,包括:细胞比较步骤,其细分为以下步骤:(a)提供缺陷检测成功率或缺陷 检测成功图由于至少每个晶片或每个芯片的单元比较方案,(b)基于提供的缺陷检测成功率或缺陷检测成功来选择单元比较方案或管芯比较方案的检查序列 映射,(c)如果选择了小区比较方案,则通过执行小区比较方案判断检查缺陷的检测是否可能; 以及如果判断结果指示检查缺陷的检测不可能执行管芯比较,或者在选择步骤中选择管芯比较方案的管芯比较步骤。
    • 8. 发明授权
    • Method and apparatus for reviewing defects of semiconductor device
    • 检查半导体器件缺陷的方法和装置
    • US08581976B2
    • 2013-11-12
    • US12986475
    • 2011-01-07
    • Masaki KuriharaToshifumi HondaRyo Nakagaki
    • Masaki KuriharaToshifumi HondaRyo Nakagaki
    • H04N7/18
    • G06T7/001G06T2207/30148H01J37/222H01J37/28H01J2237/2817
    • A method and apparatus for reviewing defects of a semiconductor device is provided which involves detecting a defect on a SEM image taken at low magnification, and reviewing the defect on a SEM image taken at high magnification, and which can review a lot of defects in a short period of time thereby to improve the efficiency of defect review. In the present invention, the method for reviewing defects of a semiconductor device includes the steps of obtaining an image including a defect on the semiconductor device detected by a detection device by use of a scanning electron microscope at a first magnification, making a reference image from the image including the defect obtained at the first magnification, detecting the defect by comparing the image including the defect obtained at the first magnification to the reference image made from the image including the defect at the first magnification, and taking an image of the detected defect at a second magnification that is larger than the first magnification.
    • 提供了一种用于检查半导体器件缺陷的方法和装置,其涉及检测在低放大倍率下拍摄的SEM图像上的缺陷,并且以高倍放大倍数检查SEM图像上的缺陷,并且可以检查在 短时间内可以提高缺陷检查的效率。 在本发明中,用于检查半导体器件的缺陷的方法包括以下步骤:通过使用扫描电子显微镜以第一放大率获得由检测装置检测的半导体器件上的缺陷的图像,从而 所述图像包括在第一放大处获得的缺陷,通过将包括在第一放大获得的缺陷的图像与由包含第一放大率的缺陷构成的图像进行比较的图像进行比较来检测缺陷,并且获取检测到的缺陷的图像 在大于第一放大率的第二放大倍率下。
    • 10. 发明授权
    • Method and apparatus for reviewing defects of semiconductor device
    • 检查半导体器件缺陷的方法和装置
    • US07873202B2
    • 2011-01-18
    • US11488636
    • 2006-07-19
    • Masaki KuriharaToshifumi HondaRyo Nakagaki
    • Masaki KuriharaToshifumi HondaRyo Nakagaki
    • G06K9/00
    • G06T7/001G06T2207/30148H01J37/222H01J37/28H01J2237/2817
    • An apparatus for reviewing defects of a semiconductor device is provided to review a lot of defects in a short period of time thereby to improve the efficiency of defect review. A method for reviewing defects of a semiconductor device includes obtaining an image including a defect on the semiconductor device detected by a detection device by use of a scanning electron microscope at a first magnification, making a reference image from the image including the defect obtained at the first magnification, detecting the defect by comparing the image including the defect obtained at the first magnification to the reference image made from the image including the defect at the first magnification, and taking an image of the detected defect at a second magnification that is larger than the first magnification.
    • 提供一种用于检查半导体器件的缺陷的装置,以在短时间内检查大量缺陷,从而提高缺陷检查的效率。 一种用于检查半导体器件的缺陷的方法包括:利用扫描电子显微镜以第一倍率获得包括由检测装置检测到的半导体器件的图像的图像,从包括在第 第一放大率,通过将包括在第一放大率获得的缺陷的图像与由包括第一放大率的缺陷构成的图像制成的参考图像进行比较来检测缺陷,并且以大于第二倍率的第二倍率拍摄检测到的缺陷的图像 第一放大。