专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130153014A1 PHOTOELECTRIC CONVERTER AND METHOD OF MANUFACTURING PHOTOELECTRIC CONVERTER 审中-公开
标题翻译：光电转换器及制造光电转换器的方法
公开(公告)号：US20130153014A1
公开(公告)日：2013-06-20
申请号：US13810788
申请日：2011-09-26
申请人： Ryo Matsuoka , Manabu Kyuzo , Nobuyuki Horiuchi , Rui Kamada , Daisuke Toyota , Yoshihide Okawa
发明人： Ryo Matsuoka , Manabu Kyuzo , Nobuyuki Horiuchi , Rui Kamada , Daisuke Toyota , Yoshihide Okawa
IPC分类号： H01L31/065 , H01L31/18
CPC分类号： H01L31/065 , H01L31/046 , H01L31/0465 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： A photoelectric converter is disclosed. The photoelectric converter includes an electrode layer and a semiconductor layer. The semiconductor layer is on the electrode layer. The semiconductor layer contains a chalcopyrite compound semiconductor. The semiconductor layer comprises a plurality of sub-layers. The plurality of sub-layers comprises a first sub-layer. The first sub-layer is located closest to the electrode layer. The first sub-layer has a first thickness smaller than an average thickness of the rest of the plurality of sub-layers.
摘要翻译：公开了一种光电转换器。光电转换器包括电极层和半导体层。半导体层在电极层上。半导体层含有黄铜矿化合物半导体。半导体层包括多个子层。多个子层包括第一子层。第一子层位于最靠近电极层的位置。第一子层具有小于多个子层中的其余部分的平均厚度的第一厚度。

2. 发明授权

US08772826B2 Photoelectric conversion device 有权
标题翻译：光电转换装置
公开(公告)号：US08772826B2
公开(公告)日：2014-07-08
申请号：US13701150
申请日：2011-05-30
申请人： Hideaki Asao , Rui Kamada , Shuichi Kasai , Seiji Oguri , Isamu Tanaka , Nobuyuki Horiuchi , Kazumasa Umesato
发明人： Hideaki Asao , Rui Kamada , Shuichi Kasai , Seiji Oguri , Isamu Tanaka , Nobuyuki Horiuchi , Kazumasa Umesato
IPC分类号： H01L29/88 , H01L29/861
CPC分类号： H01L31/0272 , H01L31/0322 , H01L31/046 , H01L31/0465 , Y02E10/541
摘要： It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer is comprised of a plurality of stacked semiconductor layers containing a chalcopyrite-based compound semiconductor. The semiconductor layers contain oxygen. A molar concentration of the oxygen in surfaces and their vicinities of the semiconductor layers where the semiconductor layers are stacked on each other is higher than average molar concentrations of the oxygen in the semiconductor layers.
摘要翻译：本发明的目的是提供一种具有高光电转换效率的光电转换装置。光电转换装置包括电极层和位于电极层上的光吸收层。光吸收层由含有黄铜矿类化合物半导体的多个层叠半导体层构成。半导体层含有氧。半导体层彼此层叠的半导体层的表面的摩尔浓度及其附近的摩尔浓度高于半导体层中的氧的平均摩尔浓度。

3. 发明申请

US20130069187A1 PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：光电转换器件
公开(公告)号：US20130069187A1
公开(公告)日：2013-03-21
申请号：US13701150
申请日：2011-05-30
申请人： Hideaki Asao , Rui Kamada , Shuichi Kasai , Seiji Oguri , Isamu Tanaka , Nobuyuki Horiuchi , Kazumasa Umesato
发明人： Hideaki Asao , Rui Kamada , Shuichi Kasai , Seiji Oguri , Isamu Tanaka , Nobuyuki Horiuchi , Kazumasa Umesato
IPC分类号： H01L31/0272
CPC分类号： H01L31/0272 , H01L31/0322 , H01L31/046 , H01L31/0465 , Y02E10/541
摘要： It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer is comprised of a plurality of stacked semiconductor layers containing a chalcopyrite-based compound semiconductor. The semiconductor layers contain oxygen. A molar concentration of the oxygen in surfaces and their vicinities of the semiconductor layers where the semiconductor layers are stacked on each other is higher than average molar concentrations of the oxygen in the semiconductor layers.
摘要翻译：本发明的目的是提供一种具有高光电转换效率的光电转换装置。光电转换装置包括电极层和位于电极层上的光吸收层。光吸收层由含有黄铜矿类化合物半导体的多个层叠半导体层构成。半导体层含有氧。半导体层彼此层叠的半导体层的表面的摩尔浓度及其附近的摩尔浓度高于半导体层中的氧的平均摩尔浓度。

4. 发明申请

US20110308616A1 Photoelectric Conversion Device 审中-公开
标题翻译：光电转换装置
公开(公告)号：US20110308616A1
公开(公告)日：2011-12-22
申请号：US13203823
申请日：2010-09-17
申请人： Rui Kamada , Shuji Nakazawa , Nobuyuki Horiuchi , Shintaro Kubo , Yusuke Miyamichi
发明人： Rui Kamada , Shuji Nakazawa , Nobuyuki Horiuchi , Shintaro Kubo , Yusuke Miyamichi
IPC分类号： H01L31/0264
CPC分类号： H01L31/0322 , H01L31/036 , H01L31/0749 , Y02E10/541
摘要： It is aimed to provide a photoelectric conversion device having high adhesion between a light-absorbing layer and an electrode layer as well as high photoelectric conversion efficiency. In order to achieve this object, the photoelectric conversion device includes a first layer and a second layer provided on the first layer. Further, in the photoelectric conversion device, the first layer includes an electrode layer, the second layer includes a light-absorbing layer including a group I-III-VI compound semiconductor, the light-absorbing layer includes a first region and a second region located farther from the first layer than the first region, and an average grain diameter of crystal grains in the second region is larger than an average grain diameter of crystal grains in the first region.
摘要翻译：旨在提供一种在光吸收层和电极层之间具有高粘附性的光电转换装置以及高的光电转换效率。为了实现该目的，光电转换装置包括设置在第一层上的第一层和第二层。此外，在光电转换装置中，第一层包括电极层，第二层包括含有I-III-VI族化合物半导体的光吸收层，光吸收层包括第一区域和位于比第一区域更远离第一层，并且第二区域中的晶粒的平均粒径大于第一区域中的晶粒的平均粒径。

5. 发明申请

US20090133741A1 Photoelectric Conversion Device and Method of Manufacturing the Same, and Photoelectric Power Generation Device 审中-公开
标题翻译：光电转换装置及其制造方法以及光电发电装置
公开(公告)号：US20090133741A1
公开(公告)日：2009-05-28
申请号：US12065486
申请日：2006-09-04
申请人： Hisashi Higuchi , Yuji Kishida , Rui Kamada
发明人： Hisashi Higuchi , Yuji Kishida , Rui Kamada
IPC分类号： H01L31/04 , H01L31/02
CPC分类号： H01G9/2031 , H01G9/2068 , Y02E10/542 , Y02P70/521
摘要： A photoelectric conversion device 1 comprises a laminated body comprising a conducting substrate 2, and an opposing electrode layer 3, a porous spacer layer 5 containing an electrolyte 4, a porous semiconductor layer 7 that adsorbs a dye 6 and contains the electrolyte 4 and a light-transmitting conductive layer 8 respectively laminated in this order on the conducting substrate 2. Consequently, the thickness of the electrolyte layer determined previously by a gap between two substrates is allowed to be determined according to the thickness of a spacer layer containing an electrolyte 4, and thus the electrolyte layer can be made both thin and uniform, and the conversion efficiency and reliability can be improved.
摘要翻译：光电转换装置1包括层叠体，其包括导电基板2和相对电极层3，包含电解质4的多孔间隔层5，吸附染料6并含有电解质4的多孔半导体层7和光在导电性基板2上依次层叠有导电层8。因此，可以根据含有电解质4的间隔层的厚度来确定由两个基板之间的间隙预先确定的电解质层的厚度，因此可以使电解质层既薄又均匀，可提高转换效率和可靠性。

6. 发明申请

US20130099226A1 PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：光电转换器件
公开(公告)号：US20130099226A1
公开(公告)日：2013-04-25
申请号：US13807050
申请日：2011-06-28
申请人： Rui Kamada , Shuichi Kasai
发明人： Rui Kamada , Shuichi Kasai
IPC分类号： H01L31/0272
CPC分类号： H01L31/0272 , H01L31/0322 , H01L31/046 , H01L31/0749 , Y02E10/541
摘要： It is aimed to provide a photoelectric conversion device having high adhesion between a first semiconductor layer and an electrode layer as well as high photoelectric conversion efficiency. A photoelectric conversion device comprises an electrode layer, a first semiconductor layer located on the electrode layer and comprising a chalcopyrite-based compound semiconductor of group I-III-VI and oxygen, and a second semiconductor layer located on the first semiconductor layer and forming a pn junction with the first semiconductor layer. In the photoelectric conversion device, the first semiconductor layer has a higher molar concentration of oxygen in a part located on the electrode layer side with respect to a center portion in a lamination direction of the first semiconductor layer than a molar concentration of oxygen in the whole of the first semiconductor layer.
摘要翻译：目的在于提供一种在第一半导体层和电极层之间具有高粘附性的光电转换装置以及高的光电转换效率。光电转换装置包括电极层，位于电极层上的第一半导体层，其包含基于I-III-VI族的氧化铜的黄铜矿型化合物半导体和位于第一半导体层上的第二半导体层， pn结与第一半导体层。在光电转换装置中，第一半导体层在第一半导体层的层叠方向上相对于中心部分位于电极层一侧的部分中的氧摩尔浓度高于整个氧气的摩尔浓度的第一半导体层。

7. 发明申请

US20130037901A1 PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：光电转换器件
公开(公告)号：US20130037901A1
公开(公告)日：2013-02-14
申请号：US13643499
申请日：2011-04-22
申请人： Shintaro Kubo , Shuji Nakazawa , Rui Kamada , Seiji Oguri , Shinnosuke Ushio , Shuichi Kasai , Seiichiro Inai
发明人： Shintaro Kubo , Shuji Nakazawa , Rui Kamada , Seiji Oguri , Shinnosuke Ushio , Shuichi Kasai , Seiichiro Inai
IPC分类号： H01L31/0224
CPC分类号： H01L27/142 , H01L21/02568 , H01L21/02614 , H01L21/02628 , H01L31/0322 , H01L31/0384 , H01L31/03923 , H01L31/046 , H01L31/0749 , Y02E10/541
摘要： It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency that improves reliability by increasing contact force between a light absorbing layer and an electrode layer. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer contains a compound semiconductor. The light absorbing layer comprises a first layer close to the electrode layer and a second layer located on the first layer. The first layer has a void ratio lower than that of the second layer.
摘要翻译：本发明的目的是提供一种具有高光电转换效率的光电转换装置，其通过增加光吸收层和电极层之间的接触力来提高可靠性。光电转换装置包括电极层和位于电极层上的光吸收层。光吸收层含有化合物半导体。光吸收层包括靠近电极层的第一层和位于第一层上的第二层。第一层具有低于第二层的空隙率。

8. 发明授权

US08709860B2 Method for manufacturing photoelectric conversion device 有权
标题翻译：制造光电转换装置的方法
公开(公告)号：US08709860B2
公开(公告)日：2014-04-29
申请号：US13640526
申请日：2011-04-12
申请人： Shintaro Kubo , Rui Kamada , Yusuke Miyamichi , Shuji Nakazawa
发明人： Shintaro Kubo , Rui Kamada , Yusuke Miyamichi , Shuji Nakazawa
IPC分类号： H01L21/00 , H01L31/032 , H01L21/02 , H01L31/0749 , H01L31/18
CPC分类号： H01L31/0322 , H01L21/02628 , H01L31/046 , H01L31/0465 , H01L31/056 , H01L31/0749 , H01L31/18 , Y02E10/52 , Y02E10/541 , Y02P70/521
摘要： The object is to improve the conversion efficiency of a photoelectric conversion device. This object can be achieved by a photoelectric conversion device including an electrode and a semiconductor layer which is provided on one main surface of the electrode and contains a I-III-VI group compound semiconductor, wherein the semiconductor layer includes a connection layer that is located at a position on the one main surface side of the electrode and has a tendency that, the closer to the one main surface, the greater a quotient obtained by dividing an amount of substance of a I-B group element by an amount of substance of a III-B group element becomes.
摘要翻译：目的是提高光电转换装置的转换效率。该目的可以通过包括电极和半导体层的光电转换装置来实现，该电极和半导体层设置在电极的一个主表面上并且包含I-III-VI族化合物半导体，其中半导体层包括位于在电极的一个主表面侧的位置处，并且具有这样的趋势：越靠近一个主表面，通过将IB族元素的物质的量除以III的物质的量获得的商量越大 -B组元素变成。

9. 发明申请

US20130026588A1 PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：光电转换装置及制造光电转换装置的方法
公开(公告)号：US20130026588A1
公开(公告)日：2013-01-31
申请号：US13640526
申请日：2011-04-12
申请人： Shintaro Kubo , Rui Kamada , Yusuke Miyamichi , Shuji Nakazawa
发明人： Shintaro Kubo , Rui Kamada , Yusuke Miyamichi , Shuji Nakazawa
IPC分类号： H01L31/0264 , H01L31/18
CPC分类号： H01L31/0322 , H01L21/02628 , H01L31/046 , H01L31/0465 , H01L31/056 , H01L31/0749 , H01L31/18 , Y02E10/52 , Y02E10/541 , Y02P70/521
摘要： The object is to improve the conversion efficiency of a photoelectric conversion device. This object can be achieved by a photoelectric conversion device including an electrode and a semiconductor layer which is provided on one main surface of the electrode and contains a I-III-VI group compound semiconductor, wherein the semiconductor layer includes a connection layer that is located at a position on the one main surface side of the electrode and has a tendency that, the closer to the one main surface, the greater a quotient obtained by dividing an amount of substance of a I-B group element by an amount of substance of a III-B group element becomes.
摘要翻译：目的是提高光电转换装置的转换效率。该目的可以通过包括电极和半导体层的光电转换装置来实现，该电极和半导体层设置在电极的一个主表面上并且包含I-III-VI族化合物半导体，其中半导体层包括位于在电极的一个主表面侧的位置处，并且具有这样的趋势：越靠近一个主表面，通过将IB族元素的物质的量除以III的物质的量获得的商量越大 -B组元素变成。

10. 发明申请

US20090293947A1 Photoelectric Conversion Device and Method of Manufacturing the Same, and Photoelectric Power Generation Device 审中-公开
标题翻译：光电转换装置及其制造方法以及光电发电装置
公开(公告)号：US20090293947A1
公开(公告)日：2009-12-03
申请号：US12089894
申请日：2006-10-10
申请人： Hisashi Higuchi , Rui Kamada
发明人： Hisashi Higuchi , Rui Kamada
IPC分类号： H01L31/00 , H01L31/18
CPC分类号： H01G9/2031 , H01G9/2068 , H01M14/005 , Y02E10/542 , Y02P70/521
摘要： This invention provides a photoelectric transducer comprising a light transparent substrate, a light transparent conductive layer provided on the light transparent substrate and a porous semiconductor layer provided on the light transparent conductive layer. The porous semiconductor layer can absorb coloring matter and contains an electrolyte. The photoelectric transducer further comprises a porous spacer layer containing an electrolyte provided on the porous semiconductor layer and a counter electrode layer provided on the porous spacer layer. According to the above constitution, the thickness of the electrolyte layer is determined by the thickness of the spacer layer containing the electrolyte unlike the prior art technique in which the thickness of the electrolyte layer is determined by spacing between two substrates. Accordingly, the electrolyte layer can be formed thinly and evenly and can enhance the photoelectric conversion efficiency and the reliability.
摘要翻译：本发明提供一种光电换能器，其包括透光基板，设置在透光基板上的透光导电层和设在该透光导电层上的多孔半导体层。多孔半导体层可以吸收色素并含有电解质。该光电变换器还包括多孔隔离层，该多孔隔离层含有设置在多孔半导体层上的电解质和设置在多孔隔离层上的对电极层。根据上述结构，电解质层的厚度由包含电解质的间隔层的厚度决定，与现有技术相比，其中电解质层的厚度由两个基板之间的间隔决定。因此，可以薄且均匀地形成电解质层，并且可以提高光电转换效率和可靠性。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式