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    • 3. 发明申请
    • DEBUG STATE MACHINE CROSS TRIGGERING
    • 调试状态机交叉触发
    • US20120150474A1
    • 2012-06-14
    • US12980849
    • 2010-12-29
    • Eric M. RentschlerSteven J. KommruschElizabeth M. CooperStephen Ennis
    • Eric M. RentschlerSteven J. KommruschElizabeth M. CooperStephen Ennis
    • G06F19/00
    • G01R31/31705
    • In an electronic system that includes a plurality of electronic modules and a plurality of debug circuits, each of which is integrated with one of the plurality of electronic modules, a method for performing debug operations is performed by the plurality of debug circuits. The method includes each of the plurality of debug circuits producing a first cross trigger signal on a communications interface between the plurality of debug circuits, where the first cross trigger signal indicates that a triggering event has not occurred. The method further includes each of the plurality of debug circuits determining whether the triggering event has occurred, and in response to determining that the triggering event has occurred, each of the plurality of debug circuits producing a second cross trigger signal on the communications interface, which indicates that the triggering event has occurred.
    • 在包括多个电子模块和多个调试电路的电子系统中,每个调试电路与多个电子模块之一集成在一起,用于执行调试操作的方法由多个调试电路执行。 该方法包括多个调试电路中的每一个在多个调试电路之间的通信接口上产生第一交叉触发信号,其中第一交叉触发信号指示未发生触发事件。 该方法还包括多个调试电路中的每一个确定触发事件是否已经发生,并且响应于确定触发事件已经发生,多个调试电路中的每一个在通信接口上产生第二交叉触发信号, 表示触发事件已发生。
    • 9. 发明授权
    • Method and apparatus for providing high-speed column redundancy
    • 提供高速列冗余的方法和装置
    • US5548553A
    • 1996-08-20
    • US353603
    • 1994-12-12
    • Elizabeth M. CooperMichael Leary
    • Elizabeth M. CooperMichael Leary
    • G11C29/00G11C13/00
    • G11C29/80G11C29/802G11C29/848
    • A semiconductor memory device according to the invention includes a main memory array comprising a plurality of memory sub-arrays. Each of the memory sub-arrays comprises a plurality of columns and at least one redundant column. Each column of the memory sub-array also includes multiplexing means, coupled to the input and output path of the respective column and an input and output path of a neighboring column. In addition, the redundant column is coupled to the input and output path of a neighboring column. In the event that one of the columns of the memory sub-array is defective, the multiplexing means of each of the columns between the defective column and the redundant column acts to couple the input and output paths of that column to the input and output paths of the neighboring column. With such an arrangement, the defective column is bypassed and a memory device capable of operating without defects is provided.
    • 根据本发明的半导体存储器件包括具有多个存储器子阵列的主存储器阵列。 每个存储器子阵列包括多个列和至少一个冗余列。 存储器子阵列的每列还包括耦合到相应列的输入和输出路径以及相邻列的输入和输出路径的多路复用装置。 此外,冗余列耦合到相邻列的输入和输出路径。 在存储器子阵列中的一列存在缺陷的情况下,缺陷列和冗余列之间的每列的复用装置用于将该列的输入和输出路径耦合到输入和输出路径 的相邻列。 通过这种布置,旁路缺陷列,并且提供能够无缺陷地运行的存储器件。