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    • 7. 发明申请
    • Pulsed Plasma Chamber in Dual Chamber Configuration
    • 脉冲等离子室双腔配置
    • US20130059448A1
    • 2013-03-07
    • US13227404
    • 2011-09-07
    • Alexei MarakhtanovRajinder DhindsaEric HudsonAndrew D. Bailey, III
    • Alexei MarakhtanovRajinder DhindsaEric HudsonAndrew D. Bailey, III
    • H01L21/3065H01L21/306C23F1/08
    • Embodiments for processing a substrate in a pulsed plasma chamber are provided. A processing apparatus with two chambers, separated by a plate fluidly connecting the chambers, includes a continuous wave (CW) controller, a pulse controller, and a system controller. The CW controller sets the voltage and the frequency for a first radio frequency (RF) power source coupled to a top electrode. The pulse controller is operable to set voltage, frequency, ON-period duration, and OFF-period duration for a pulsed RF signal generated by a second RF power source coupled to the bottom electrode. The system controller is operable to set parameters to regulate the flow of species between the chambers to assist in the negative-ion etching, to neutralize excessive positive charge on the wafer surface during afterglow in the OFF period, and to assist in the re-striking of the bottom plasma during the ON period.
    • 提供了用于在脉冲等离子体室中处理衬底的实施例。 具有两个腔室的处理装置,由流体连接腔室的板分开,包括连续波(CW)控制器,脉冲控制器和系统控制器。 CW控制器设置耦合到顶部电极的第一射频(RF)电源的电压和频率。 脉冲控制器可操作地为耦合到底部电极的第二RF电源产生的脉冲RF信号设置电压,频率,接通周期持续时间和关闭周期持续时间。 系统控制器可操作以设定参数以调节室之间的物质流动,以辅助负离子蚀刻,以在关闭期间中止余辉期间晶片表面上的过多正电荷,并且辅助重击 在ON期间的底部等离子体。