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1. 发明申请

US20050121078A1 Automatic dosing pressure chamber distribution of effluent 审中-公开
标题翻译：自动计量压力室流出液分配
公开(公告)号：US20050121078A1
公开(公告)日：2005-06-09
申请号：US10946266
申请日：2004-09-20
申请人： Roy Hebert , Kenneth Collins
发明人： Roy Hebert , Kenneth Collins
IPC分类号： E03F1/00 , F16K21/18 , F16K31/28
CPC分类号： E03F1/002 , F16K31/28 , Y10T137/7319
摘要： A septic tank effluent distribution device, which is comprised of an influent collection chamber, a novel automatic dosing mechanism in conjunction with a pressure distribution chamber. The equal distribution of effluent resulting from this invention greatly improves the efficiency of gravity flow distribution systems. This device is intended to install as the distribution box for any slow-flow soil absorption system, transforming the distribution efficiency of the system to that of a powerful dose, using a simple and reliable technology.
摘要翻译：一种化粪池流出物分配装置，其由进水收集室组成，与压力分配室结合的新型自动计量装置。本发明产生的流出物的均匀分布大大提高了重力流量分配系统的效率。该装置旨在作为任何缓慢流动的土壤吸收系统的分配箱进行安装，使用简单可靠的技术将系统的分配效率转化为强大剂量。

2. 发明申请

US20070119546A1 Plasma immersion ion implantation apparatus including a capacitively coupled plasma source having low dissociation and low minimum plasma voltage 审中-公开
标题翻译：等离子体浸没离子注入装置，其包括具有低解离和低最小等离子体电压的电容耦合等离子体源
公开(公告)号：US20070119546A1
公开(公告)日：2007-05-31
申请号：US11600680
申请日：2006-11-15
申请人： Kenneth Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo , Gonzalo Monroy
发明人： Kenneth Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo , Gonzalo Monroy
IPC分类号： H01J7/24 , C23F1/00
CPC分类号： H01J37/321 , H01J37/32082 , H01J37/32412
摘要： A plasma immersion ion implantation reactor for implanting a species into a workpiece includes an enclosure which has a side wall and a ceiling defining a chamber, and a workpiece support pedestal within the chamber for supporting a workpiece having a surface layer into which the species are to be ion implanted, the workpiece support pedestal facing an interior surface of the ceiling so as to define therebetween a process region extending generally across the diameter of the wafer support pedestal. The reactor further includes an RF plasma source power generator connected across the ceiling or the sidewall and the workpiece support pedestal for capacitively coupling RF source power into the chamber. A gas distribution apparatus is provided for furnishing process gas into the chamber and a supply of process gas is provided for furnishing to the gas distribution devices a process gas containing the species. An RF bias generator is connected to the workpiece support pedestal and has an RF bias frequency for establishing an RF bias.
摘要翻译：用于将物种植入工件的等离子体浸入式离子注入反应器包括具有限定腔室的侧壁和顶板的壳体，以及腔室内的工件支撑基座，用于支撑具有物体所属表面层的工件离子注入，工件支撑台座面向天花板的内表面，以便在其间限定大致延伸穿过晶片支撑台座的直径的工艺区域。反应器还包括连接在天花板或侧壁上的RF等离子体源功率发生器和用于将RF源功率电容耦合到腔室中的工件支撑基座。提供了一种用于将工艺气体提供到腔室中的气体分配装置，并且提供了一种工艺气体供给装置，用于向气体分配装置提供含有该物质的工艺气体。 RF偏置发生器连接到工件支撑基座，并具有用于建立RF偏压的RF偏置频率。

3. 发明申请

US20070016270A1 System and method for leak detection in external cooling pad 有权
标题翻译：外部散热垫检漏系统及方法
公开(公告)号：US20070016270A1
公开(公告)日：2007-01-18
申请号：US11181122
申请日：2005-07-14
申请人： Stelica Stelea , David Kimball , Lynn Shimada , Kenneth Collins , Grant Palmer
发明人： Stelica Stelea , David Kimball , Lynn Shimada , Kenneth Collins , Grant Palmer
IPC分类号： A61F7/00
CPC分类号： A61F7/10 , A61B2017/00026 , A61B2017/00119 , A61F7/0085 , A61F7/02 , A61F2007/0001 , A61F2007/0054 , A61F2007/0056
摘要： An externally-applied heat exchange pad has three layers laminated together, an inner and outer non-conductive layer and a middle conductive layer. A leak in the inner layer causes coolant to contact the middle layer and change impedance, which can be sensed and used as an indication of an impending total leak of the pad,
摘要翻译：外部施加的热交换垫具有层压在一起的三层，内部和外部非导电层和中间导电层。内层中的泄漏使得冷却剂接触中间层并改变阻抗，其可以被感测并且用作对即将到来的垫的总泄漏的指示，

4. 发明申请

US20060237136A1 O-ringless tandem throttle valve for a plasma reactor chamber 失效
标题翻译：用于等离子体反应室的O型无环式串联节流阀
公开(公告)号：US20060237136A1
公开(公告)日：2006-10-26
申请号：US11115956
申请日：2005-04-26
申请人： Andrew Nguyen , Hiroji Hanawa , Kenneth Collins , Kartik Ramaswamy , Amir Al-Bayati , Biagio Gallo
发明人： Andrew Nguyen , Hiroji Hanawa , Kenneth Collins , Kartik Ramaswamy , Amir Al-Bayati , Biagio Gallo
IPC分类号： H01L21/306
CPC分类号： F16K1/526 , F16K1/22 , H01J37/3244 , H01J37/32449 , Y10T137/87531
摘要： A valve system having high maximum gas flow rate and fine control of gas flow rate, includes a valve housing for blocking gas flow through a gas flow path, a large area opening through said housing having a first arcuate side wall and a small area opening through said housing having a second arcuate side wall, and respective large area and small area rotatable valve flaps in said large area and small area openings, respectively, and having arcuate edges congruent with said first and second arcuate side walls, respectively and defining therebetween respective first and second valve gaps. The first and second valve gaps are sufficiently small to block flow of a gas on one side of said valve housing up to a predetermined pressure limit, thereby obviating any need for O-rings.
摘要翻译：具有高的最大气体流量和气体流量的精细控制的阀门系统包括用于阻止气体流过气体流路的阀壳体，通过所述壳体的大面积开口具有第一弧形侧壁和小区域开口所述壳体分别具有第二弧形侧壁和分别在所述大面积和小面积开口中的相应的大面积和小面积的可旋转阀瓣，并且分别具有与所述第一和第二弧形侧壁一致的弓形边缘，并且在其间限定各自的第一和第二阀间隙。第一和第二阀间隙足够小以阻止气体在所述阀壳体的一侧上的流动直到预定的压力极限，从而避免了对O形环的任何需要。

5. 发明申请

US20060081558A1 Plasma immersion ion implantation process 失效
标题翻译：等离子体浸没离子注入工艺
公开(公告)号：US20060081558A1
公开(公告)日：2006-04-20
申请号：US11046660
申请日：2005-01-28
申请人： Kenneth Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo
发明人： Kenneth Collins , Hiroji Hanawa , Kartik Ramaswamy , Andrew Nguyen , Amir Al-Bayati , Biagio Gallo
IPC分类号： C23F1/00 , H01L21/302
CPC分类号： H01J37/321 , H01J37/32082 , Y10S438/906
摘要： A method of processing a workpiece includes placing the workpiece on a workpiece support pedestal in a main chamber with a gas distribution showerhead, introducing a process gas into a remote plasma source chamber and generating a plasma in the remote plasma source chamber, transporting plasma-generated species from the remote plasma source chamber to the gas distribution showerhead so as to distribute the plasma-generated species into the main chamber through the gas distribution showerhead, and applying plasma RF power into the main chamber.
摘要翻译：一种处理工件的方法包括将工件放置在具有气体分配喷头的主室中的工件支撑基座上，将工艺气体引入远程等离子体源室并在远程等离子体源室中产生等离子体，传输等离子体产生的从远程等离子体源室到气体分配淋浴喷头的物质，以便通过气体分配喷头将等离子体产生的物质分配到主室中，并将等离子体RF功率施加到主室中。

6. 发明申请

US20060043065A1 Gasless high voltage high contact force wafer contact-cooling electrostatic chuck 有权
公开(公告)号：US20060043065A1
公开(公告)日：2006-03-02
申请号：US10929104
申请日：2004-08-26
申请人： Douglas Buchberger , Daniel Hoffman , Kartik Ramaswamy , Andrew Nguyen , Hiorji Hanawa , Kenneth Collins , Amir Al-Bayati
发明人： Douglas Buchberger , Daniel Hoffman , Kartik Ramaswamy , Andrew Nguyen , Hiorji Hanawa , Kenneth Collins , Amir Al-Bayati
IPC分类号： B44C1/22
CPC分类号： H01L21/67109 , H01L21/6831
摘要： A method of electrostatically chucking a wafer while removing heat from the wafer in a plasma reactor includes providing a polished generally continuous surface on a puck, placing the wafer on the polished surface of the puck and cooling the puck. A chucking voltage is applied to an electrode within the puck to electrostatically pull the wafer onto the surface of the puck with sufficient force to attain a selected heat transfer coefficient between contacting surfaces of the puck and wafer.

7. 发明授权

US06524432B1 Parallel-plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density 失效
标题翻译：具有感应天线的平行板电极等离子体反应器和等离子体离子密度的可调径向分布
公开(公告)号：US06524432B1
公开(公告)日：2003-02-25
申请号：US09539814
申请日：2000-03-30
申请人： Kenneth Collins , Michael Rice , John Trow , Douglas Buchberger , Eric Askarinam , Joshua Tsui , David Groechel , Raymond Hung
发明人： Kenneth Collins , Michael Rice , John Trow , Douglas Buchberger , Eric Askarinam , Joshua Tsui , David Groechel , Raymond Hung
IPC分类号： H01L2100
CPC分类号： H01J37/321 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01L21/6831
摘要： There is disclosed a plasma reactor for processing a semiconductor workpiece such as a wafer, including a chamber having an overhead ceiling with a three-dimensional shape such as a hemisphere or dome. The reactor further includes an inductive antenna over the ceiling which may be conformal or nonconformal in shape with the ceiling. The ceiling may be a semiconductor material so that it can function as both a window for the inductive field of the antenna as well as an electrode which can be grounded, or to which RF power may be applied or which may be allowed to float electrically. The reactor includes various features which allow the radial distribution of the plasma ion density across the wafer surface to be adjusted to an optimum distribution for processing uniformity across the wafer surface.
摘要翻译：公开了一种用于处理诸如晶片的半导体工件的等离子体反应器，其包括具有诸如半球或圆顶的三维形状的架空天花板的室。反应器还包括在天花板上的感应天线，其可以与天花板的形状保形或不共形。天花板可以是半导体材料，使得其可以用作天线的感应场的窗口，以及可以接地的电极，或者可以施加RF功率或可以允许电力浮动的电极。反应器包括允许跨晶片表面的等离子体离子密度的径向分布被调整到最佳分布以处理跨晶片表面的均匀性的各种特征。

8. 发明授权

US06444084B1 Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna 有权
标题翻译：具有感性天线的平行板电极等离子体反应器的低密度高频工艺
公开(公告)号：US06444084B1
公开(公告)日：2002-09-03
申请号：US09480007
申请日：2000-01-10
申请人： Kenneth Collins
发明人： Kenneth Collins
IPC分类号： H05H100
CPC分类号： H01L21/6831 , H01J37/321 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522
摘要： The present invention is embodied in a method of operating an inductively coupled plasma reactor for processing a semiconductor wafer, the reactor including a vacuum chamber for containing the wafer, a process gas source, a semiconductor window electrode facing an interior portion of the chamber, an inductive power radiator on an exterior side of the semiconductor window electrode, the inductive field having a skin depth generally decreasing with the frequency of the RF inductive field and with the density of the plasma in the chamber and generally increasing with the pressure inside the vacuum chamber, the inductive coupling of the RF field tending to approach extinguishment as the skin depth approaches the spacing between the wafer and the window electrode, a method for maintaining an intermediate plasma density inside the chamber without extinguishing the inductive coupling of the RF field, the method including operating the reactor at a selected flow rate of the process gas, a selected chamber pressure and a selected plasma source power level corresponding to the reduced plasma density, and maintaining the frequency of the RF field at least at a level sufficient to limit the skin depth to a depth less than the electrode-to-wafer spacing, whereby to maintain the inductive coupling of the RF field.
摘要翻译：本发明体现在一种操作用于处理半导体晶片的电感耦合等离子体反应器的方法，该反应器包括用于容纳晶片的真空室，工艺气体源，面向腔室内部的半导体窗口电极，在半导体窗口电极的外侧上的感应功率辐射器，感应场具有通常随着RF感应场的频率以及腔室中的等离子体的密度而降低的皮肤深度，并且通常随着真空室内的压力而增加随着皮肤深度接近晶片和窗户电极之间的间距，RF场的电感耦合趋于接近熄灭，一种用于在室内保持中间等离子体密度而不消除RF场的电感耦合的方法，该方法包括以所选择的工艺气体流速操作反应器并且将RF场的频率维持在至少足以将皮肤深度限制到小于电极到晶片间隔的深度的水平，由此，以保持RF场的电感耦合。

9. 发明授权

US5458299A Aircraft deicing apparatus 失效
标题翻译：飞机除冰装置
公开(公告)号：US5458299A
公开(公告)日：1995-10-17
申请号：US153050
申请日：1993-11-17
申请人： Kenneth Collins , Larry B. Kapp
发明人： Kenneth Collins , Larry B. Kapp
IPC分类号： B64F5/00 , B64D15/10
CPC分类号： B64F5/0054 , B64F5/0063 , Y02P70/585
摘要： An apparatus is provided for chemically deicing aircraft on the taxiway. The apparatus includes a series of nozzles to dispense deicing solution onto the wings of an aircraft, and utilizes photoelectric sensors to detect when the nozzles are appropriately positioned to dispense the deicing solution, thereby conserving deicing solution. Recycling means are provided to collect, purify and concentrate used deicing solution for further use. The apparatus is further provided with extendable telescoping lift cylinders and rotating delivery arms from which the nozzles depend, thereby allowing the device to accommodate aircraft of different dimensions and design.
摘要翻译：提供了一种用于在滑行道上化学除冰飞机的装置。该装置包括一系列喷嘴，用于将除冰溶液分配到飞行器的机翼上，并利用光电传感器来检测何时适当地定位喷嘴以分配除冰溶液，从而节省除冰溶液。提供回收装置以收集，净化和浓缩所用的除冰溶液以供进一步使用。该设备还设置有可伸缩的提升缸和旋转的传送臂，喷嘴从该传送臂所依赖的位置，从而允许设备适应不同尺寸和设计的飞机。

10. 发明申请

US20070042580A1 ION IMPLANTED INSULATOR MATERIAL WITH REDUCED DIELECTRIC CONSTANT 审中-公开
标题翻译：具有降低介电常数的离子植入绝缘材料
公开(公告)号：US20070042580A1
公开(公告)日：2007-02-22
申请号：US11551196
申请日：2006-10-19
申请人： Amir Al-Bayati , Rick Roberts , Kenneth Collins , Ken MacWilliams , Hiroji Hanawa , Kartik Ramaswamy , Biagio Gallo , Andrew Nguyen
发明人： Amir Al-Bayati , Rick Roberts , Kenneth Collins , Ken MacWilliams , Hiroji Hanawa , Kartik Ramaswamy , Biagio Gallo , Andrew Nguyen
IPC分类号： H01L21/425
CPC分类号： H01L21/823864 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/02321 , H01L21/0234 , H01L21/31695 , H01L21/7682 , H01L21/76825 , H01L21/823871 , H01L23/5329 , H01L23/53295 , H01L2221/1047 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： An integrated microelectronic circuit has a multi-layer interconnect structure overlying the transistors consisting of stacked metal pattern layers and insulating layers separating adjacent ones of said metal pattern layers. Each of the insulating layers is a dielectric material with plural gas bubbles distributed within the volume of the dielectric material to reduce the dielectric constant of the material, the gas bubbles being formed by ion implantation of a gaseous species into the dielectric material.
摘要翻译：集成的微电子电路具有覆盖由堆叠的金属图案层和分离相邻的所述金属图案层的绝缘层的晶体管的多层互连结构。每个绝缘层是具有分布在电介质材料的体积内的多个气泡的介电材料，以降低材料的介电常数，气泡通过将气态物质离子注入电介质材料而形成。

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