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1. 发明授权

US08526213B2 Memory cells, methods of programming memory cells, and methods of forming memory cells 有权
标题翻译：存储单元，编程存储单元的方法以及形成存储单元的方法
公开(公告)号：US08526213B2
公开(公告)日：2013-09-03
申请号：US12917361
申请日：2010-11-01
申请人： Roy E. Meade , Bhaskar Srinivasan , Gurtej S. Sandhu
发明人： Roy E. Meade , Bhaskar Srinivasan , Gurtej S. Sandhu
IPC分类号： G11C11/00 , G11C13/02 , G11C11/21 , G11C13/00
CPC分类号： H01L45/085 , G11C13/0007 , G11C13/0011 , G11C13/0069 , G11C2213/56 , H01L45/04 , H01L45/1233 , H01L45/1266 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/146
摘要： Some embodiments include methods of programming a memory cell. A plurality of charge carriers may be moved within the memory cell, with an average charge across the moving charge carriers having an absolute value greater than 2. Some embodiments include methods of forming and programming an ionic-transport-based memory cell. A stack is formed to have programmable material between first and second electrodes. The programmable material has mobile ions which are moved within the programmable material to transform the programmable material from one memory state to another. An average charge across the moving mobile ions has an absolute value greater than 2. Some embodiments include memory cells with programmable material between first and second electrodes. The programmable material includes an aluminum nitride first layer, and includes a second layer containing a mobile ion species in common with the first layer.
摘要翻译：一些实施例包括编程存储器单元的方法。多个电荷载体可以在存储器单元内移动，其中跨越移动电荷载流子的绝对值大于2的平均电荷。一些实施例包括形成和编程基于离子传输的存储单元的方法。堆叠形成为在第一和第二电极之间具有可编程材料。可编程材料具有在可编程材料内移动的移动离子，以将可编程材料从一个存储器状态转换到另一个。移动移动离子上的平均电荷具有大于2的绝对值。一些实施例包括在第一和第二电极之间具有可编程材料的存储单元。可编程材料包括氮化铝第一层，并且包括含有与第一层共同的可移动离子物质的第二层。

2. 发明申请

US20120106232A1 Memory Cells, Methods of Programming Memory Cells, and Methods of Forming Memory Cells 有权
标题翻译：记忆单元，记忆单元的编程方法和形成记忆单元的方法
公开(公告)号：US20120106232A1
公开(公告)日：2012-05-03
申请号：US12917361
申请日：2010-11-01
申请人： Roy E. Meade , Bhaskar Srinivasan , Gurtej S. Sandhu
发明人： Roy E. Meade , Bhaskar Srinivasan , Gurtej S. Sandhu
IPC分类号： G11C7/00 , H01L45/00 , G11C11/00
CPC分类号： H01L45/085 , G11C13/0007 , G11C13/0011 , G11C13/0069 , G11C2213/56 , H01L45/04 , H01L45/1233 , H01L45/1266 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/146
摘要： Some embodiments include methods of programming a memory cell. A plurality of charge carriers may be moved within the memory cell, with an average charge across the moving charge carriers having an absolute value greater than 2. Some embodiments include methods of forming and programming an ionic-transport-based memory cell. A stack is formed to have programmable material between first and second electrodes. The programmable material has mobile ions which are moved within the programmable material to transform the programmable material from one memory state to another. An average charge across the moving mobile ions has an absolute value greater than 2. Some embodiments include memory cells with programmable material between first and second electrodes. The programmable material includes an aluminum nitride first layer, and includes a second layer containing a mobile ion species in common with the first layer.
摘要翻译：一些实施例包括编程存储器单元的方法。多个电荷载体可以在存储器单元内移动，其中跨越移动电荷载流子的绝对值大于2的平均电荷。一些实施例包括形成和编程基于离子传输的存储单元的方法。堆叠形成为在第一和第二电极之间具有可编程材料。可编程材料具有在可编程材料内移动的移动离子，以将可编程材料从一个存储器状态转换到另一个。移动移动离子上的平均电荷具有大于2的绝对值。一些实施例包括在第一和第二电极之间具有可编程材料的存储单元。可编程材料包括氮化铝第一层，并且包括含有与第一层共同的可移动离子物质的第二层。

3. 发明授权

US09343665B2 Methods of forming a non-volatile resistive oxide memory cell and methods of forming a non-volatile resistive oxide memory array 有权
标题翻译：形成非易失性电阻氧化物存储单元的方法和形成非易失性电阻氧化物存储器阵列的方法
公开(公告)号：US09343665B2
公开(公告)日：2016-05-17
申请号：US12166604
申请日：2008-07-02
申请人： Nishant Sinha , John Smythe , Bhaskar Srinivasan , Gurtej S. Sandhu , Joseph Neil Greeley , Kunal R. Parekh
发明人： Nishant Sinha , John Smythe , Bhaskar Srinivasan , Gurtej S. Sandhu , Joseph Neil Greeley , Kunal R. Parekh
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L45/1683 , H01L27/2472 , H01L45/04 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/146 , H01L45/147 , H01L45/16
摘要： A method of forming a non-volatile resistive oxide memory cell includes forming a first conductive electrode of the memory cell as part of a substrate. Metal oxide-comprising material is formed over the first conductive electrode. Etch stop material is deposited over the metal oxide-comprising material. Conductive material is deposited over the etch stop material. A second conductive electrode of the memory cell which comprises the conductive material received is formed over the etch stop material. Such includes etching through the conductive material to stop relative to the etch stop material and forming the non-volatile resistive oxide memory cell to comprise the first and second conductive electrodes having both the metal oxide-comprising material and the etch stop material therebetween. Other implementations are contemplated.
摘要翻译：形成非易失性电阻氧化物存储单元的方法包括：形成存储单元的第一导电电极作为衬底的一部分。含金属氧化物的材料形成在第一导电电极上。蚀刻停止材料沉积在包含金属氧化物的材料上。导电材料沉积在蚀刻停止材料上。包含所接收的导电材料的存储单元的第二导电电极形成在蚀刻停止材料上。这样包括通过导电材料蚀刻以相对于蚀刻停止材料停止并且形成非易失性电阻氧化物存储单元，以包括具有包含金属氧化物的材料和其间的蚀刻停止材料的第一和第二导电电极。考虑其他实现。

4. 发明授权

US08080460B2 Methods of forming diodes 有权
标题翻译：形成二极管的方法
公开(公告)号：US08080460B2
公开(公告)日：2011-12-20
申请号：US12323978
申请日：2008-11-26
申请人： Gurtej S. Sandhu , Bhaskar Srinivasan
发明人： Gurtej S. Sandhu , Bhaskar Srinivasan
IPC分类号： H01L21/8222
CPC分类号： H01L21/04 , H01L27/1021 , H01L27/2418 , H01L29/1606 , H01L45/00
摘要： Some embodiments include methods of forming diodes. A stack may be formed over a first conductive material. The stack may include, in ascending order, a sacrificial material, at least one dielectric material, and a second conductive material. Spacers may be formed along opposing sidewalls of the stack, and then an entirety of the sacrificial material may be removed to leave a gap between the first conductive material and the at least one dielectric material. In some embodiments of forming diodes, a layer may be formed over a first conductive material, with the layer containing supports interspersed in sacrificial material. At least one dielectric material may be formed over the layer, and a second conductive material may be formed over the at least one dielectric material. An entirety of the sacrificial material may then be removed.
摘要翻译：一些实施例包括形成二极管的方法。可以在第一导电材料上形成堆叠。堆叠可以按升序包括牺牲材料，至少一种电介质材料和第二导电材料。间隔物可以沿着堆叠的相对侧壁形成，然后可以去除整个牺牲材料以在第一导电材料和至少一个电介质材料之间留下间隙。在形成二极管的一些实施例中，可以在第一导电材料上形成层，其中包含支撑体的层散布在牺牲材料中。可以在该层上形成至少一种介电材料，并且可以在该至少一种电介质材料的上方形成第二导电材料。然后可以去除整个牺牲材料。

5. 发明申请

US20110201200A1 Diodes, and Methods Of Forming Diodes 有权
标题翻译：二极管和形成二极管的方法
公开(公告)号：US20110201200A1
公开(公告)日：2011-08-18
申请号：US13094642
申请日：2011-04-26
申请人： Gurtej S. Sandhu , Bhaskar Srinivasan
发明人： Gurtej S. Sandhu , Bhaskar Srinivasan
IPC分类号： H01L23/48 , H01L21/28
CPC分类号： H01L45/00 , Y10S257/91 , Y10S438/90 , Y10S438/902 , Y10S438/983
摘要： Some embodiments include methods of forming diodes. The methods may include oxidation of an upper surface of a conductive electrode to form an oxide layer over the conductive electrode. In some embodiments, the methods may include formation of an oxidizable material over a conductive electrode, and subsequent oxidation of the oxidizable material to form an oxide layer over the conductive electrode. In some embodiments, the methods may include formation of a metal halide layer over a conductive electrode. Some embodiments include diodes that contain a metal halide layer between a pair of diode electrodes.
摘要翻译：一些实施例包括形成二极管的方法。所述方法可以包括氧化导电电极的上表面以在导电电极上形成氧化物层。在一些实施方案中，所述方法可包括在导电电极上形成可氧化材料，以及随后氧化可氧化材料以在导电电极上形成氧化物层。在一些实施例中，所述方法可包括在导电电极上形成金属卤化物层。一些实施例包括在一对二极管电极之间包含金属卤化物层的二极管。

6. 发明授权

US07951619B2 Diodes, and methods of forming diodes 有权
标题翻译：二极管和形成二极管的方法
公开(公告)号：US07951619B2
公开(公告)日：2011-05-31
申请号：US12875007
申请日：2010-09-02
申请人： Gurtej S. Sandhu , Bhaskar Srinivasan
发明人： Gurtej S. Sandhu , Bhaskar Srinivasan
IPC分类号： H01L21/00
CPC分类号： H01L45/00 , Y10S257/91 , Y10S438/90 , Y10S438/902 , Y10S438/983
摘要： Some embodiments include methods of forming diodes. The methods may include oxidation of an upper surface of a conductive electrode to form an oxide layer over the conductive electrode. In some embodiments, the methods may include formation of an oxidizable material over a conductive electrode, and subsequent oxidation of the oxidizable material to form an oxide layer over the conductive electrode. In some embodiments, the methods may include formation of a metal halide layer over a conductive electrode. Some embodiments include diodes that contain a metal halide layer between a pair of diode electrodes.
摘要翻译：一些实施例包括形成二极管的方法。所述方法可以包括氧化导电电极的上表面以在导电电极上形成氧化物层。在一些实施方案中，所述方法可包括在导电电极上形成可氧化材料，以及随后氧化可氧化材料以在导电电极上形成氧化物层。在一些实施例中，所述方法可包括在导电电极上形成金属卤化物层。一些实施例包括在一对二极管电极之间包含金属卤化物层的二极管。

7. 发明授权

US08634224B2 Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of writing to and reading from a memory cell, and methods of programming a memory cell 有权
标题翻译：存储单元，非易失性存储器阵列，操作存储器单元的方法，写入存储器单元和从存储器单元读取的方法，以及编程存储器单元的方法
公开(公告)号：US08634224B2
公开(公告)日：2014-01-21
申请号：US12855624
申请日：2010-08-12
申请人： Bhaskar Srinivasan , Gurtej S. Sandhu
发明人： Bhaskar Srinivasan , Gurtej S. Sandhu
IPC分类号： G11C11/00
CPC分类号： G11C13/0002 , G11C13/0007 , G11C13/0011 , G11C13/003 , G11C13/004 , G11C13/0069 , G11C2213/12 , G11C2213/32 , G11C2213/34 , G11C2213/52 , G11C2213/56 , G11C2213/77 , H01L27/101 , H01L45/08 , H01L45/085 , H01L45/1206
摘要： In one aspect, a method of operating a memory cell includes using different electrodes to change a programmed state of the memory cell than are used to read the programmed state of the memory cell. In one aspect, a memory cell includes first and second opposing electrodes having material received there-between. The material has first and second lateral regions of different composition relative one another. One of the first and second lateral regions is received along one of two laterally opposing edges of the material. Another of the first and second lateral regions is received along the other of said two laterally opposing edges of the material. At least one of the first and second lateral regions is capable of being repeatedly programmed to at least two different resistance states. Other aspects and implementations are disclosed.
摘要翻译：一方面，操作存储单元的方法包括使用不同的电极来改变存储器单元的编程状态，而不是用于读取存储单元的编程状态。在一个方面，存储单元包括第一和第二相对电极，其间具有接收在其间的材料。该材料具有彼此不同组成的第一和第二横向区域。第一和第二横向区域中的一个沿着材料的两个横向相对的边缘中的一个被接收。第一和第二横向区域中的另一个沿着材料的所述两个横向相对的边缘中的另一个被容纳。第一和第二横向区域中的至少一个能够被重复编程至至少两个不同的阻力状态。公开了其他方面和实现。

8. 发明申请

US20130187117A1 Memory Cells and Methods of Forming Memory Cells 有权
公开(公告)号：US20130187117A1
公开(公告)日：2013-07-25
申请号：US13355382
申请日：2012-01-20
申请人： Gurtej S. Sandhu , Bhaskar Srinivasan
发明人： Gurtej S. Sandhu , Bhaskar Srinivasan
IPC分类号： H01L45/00 , H01L21/8239
CPC分类号： H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/1608
摘要： Some embodiments include memory cells which contain, in order; a first electrode material, a first metal oxide material, a second metal oxide material, and a second electrode material. The first metal oxide material has at least two regions which differ in oxygen concentration relative to one another. One of the regions is a first region and another is a second region. The first region is closer to the first electrode material than the second region, and has a greater oxygen concentration than the second region. The second metal oxide material includes a different metal than the first metal oxide material. Some embodiments include methods of forming memory cells in which oxygen is substantially irreversibly transferred from a region of a metal oxide material to an oxygen-sink material. The oxygen transfer creates a difference in oxygen concentration within one region of the metal oxide material relative to another.

9. 发明授权

US08199556B2 Methods of reading and using memory cells 有权
标题翻译：阅读和使用记忆体的方法
公开(公告)号：US08199556B2
公开(公告)日：2012-06-12
申请号：US12564265
申请日：2009-09-22
申请人： Bhaskar Srinivasan , Gurtej S. Sandhu
发明人： Bhaskar Srinivasan , Gurtej S. Sandhu
IPC分类号： G11C11/00
CPC分类号： G11C13/004 , G11C13/0002 , G11C13/0007 , G11C13/0061 , G11C2013/0052 , G11C2213/72
摘要： Some embodiments include methods of reading memory cells. The memory cells have a write operation that occurs only if a voltage of sufficient absolute value is applied for a sufficient duration of time; and the reading is conducted with a pulse that is of too short of a time duration to be sufficient for the write operation. In some embodiments, the pulse utilized for the reading may have an absolute value of voltage that is greater than or equal to the voltage utilized for the write operation. In some embodiments, the memory cells may comprise non-ohmic devices; such as memristors and diodes.
摘要翻译：一些实施例包括读取存储器单元的方法。存储器单元具有写入操作，只有当足够的绝对值的电压施加足够的持续时间时才发生; 并且读取是用太短的持续时间的脉冲来进行的，以足以用于写入操作。在一些实施例中，用于读取的脉冲可以具有大于或等于用于写入操作的电压的绝对值。在一些实施例中，存储器单元可以包括非欧姆器件; 如忆阻器和二极管。

10. 发明申请

US20120070973A1 Methods of Forming Diodes 有权
标题翻译：形成二极管的方法
公开(公告)号：US20120070973A1
公开(公告)日：2012-03-22
申请号：US13305072
申请日：2011-11-28
申请人： Gurtej S. Sandhu , Bhaskar Srinivasan
发明人： Gurtej S. Sandhu , Bhaskar Srinivasan
IPC分类号： H01L21/04
CPC分类号： H01L21/04 , H01L27/1021 , H01L27/2418 , H01L29/1606 , H01L45/00
摘要： Some embodiments include methods of forming diodes. A stack may be formed over a first conductive material. The stack may include, in ascending order, a sacrificial material, at least one dielectric material, and a second conductive material. Spacers may be formed along opposing sidewalls of the stack, and then an entirety of the sacrificial material may be removed to leave a gap between the first conductive material and the at least one dielectric material. In some embodiments of forming diodes, a layer may be formed over a first conductive material, with the layer containing supports interspersed in sacrificial material. At least one dielectric material may be formed over the layer, and a second conductive material may be formed over the at least one dielectric material. An entirety of the sacrificial material may then be removed.
摘要翻译：一些实施例包括形成二极管的方法。可以在第一导电材料上形成堆叠。堆叠可以按升序包括牺牲材料，至少一种电介质材料和第二导电材料。间隔物可以沿着堆叠的相对侧壁形成，然后可以去除整个牺牲材料以在第一导电材料和至少一种电介质材料之间留下间隙。在形成二极管的一些实施例中，可以在第一导电材料上形成层，其中包含支撑体的层散布在牺牲材料中。可以在该层上形成至少一种介电材料，并且可以在该至少一种电介质材料的上方形成第二导电材料。然后可以去除整个牺牲材料。

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