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1. 发明申请

US20110042349A1 DAMASCENE WRITE POLES PRODUCED VIA FULL FILM PLATING 失效
标题翻译：大容量写波长通过全电镀
公开(公告)号：US20110042349A1
公开(公告)日：2011-02-24
申请号：US12544998
申请日：2009-08-20
申请人： Ronghui ZHOU , Ming JIANG , Xiaohai XIANG , Jinwen WANG , Guanghong LUO , Yun-Fei LI
发明人： Ronghui ZHOU , Ming JIANG , Xiaohai XIANG , Jinwen WANG , Guanghong LUO , Yun-Fei LI
IPC分类号： B44C1/22 , B05D5/12
CPC分类号： G11B5/855 , Y10T29/49048
摘要： A method for forming a write pole comprises forming a stop layer over a substrate layer of a wafer, the stop layer having an opening above a damascene trench in the substrate layer, and forming a buffer layer over the stop layer, the buffer layer having an opening above the opening of the stop layer. The method further comprises plating a layer of magnetic material over the wafer, disposing a first sacrificial material over a region of the magnetic material above the damascene trench, performing a milling or etching operation over the wafer to remove the magnetic material not covered by the first sacrificial material and to remove the first sacrificial material, disposing a second sacrificial material over the wafer, and performing a polishing operation over the wafer to remove the region of the magnetic material above the damascene trench, the second sacrificial material, and the buffer layer.
摘要翻译：用于形成写极的方法包括在晶片的衬底层上形成阻挡层，所述阻挡层在衬底层中具有在镶嵌沟槽上方的开口，以及在停止层上形成缓冲层，所述缓冲层具有在停止层的开口上方开口。该方法还包括在晶片上镀覆一层磁性材料，在金刚石沟槽上方的磁性材料的区域上设置第一牺牲材料，在晶片上进行研磨或蚀刻操作，以去除第一牺牲材料并且去除第一牺牲材料，在晶片上设置第二牺牲材料，以及在晶片上执行抛光操作以去除镶嵌沟槽，第二牺牲材料和缓冲层之上的磁性材料的区域。

2. 发明申请

US20110086240A1 DOUBLE PATTERNING HARD MASK FOR DAMASCENE PERPENDICULAR MAGNETIC RECORDING (PMR) WRITER 有权
标题翻译：用于大容量磁带记录（PMR）写入的双重图案硬掩模
公开(公告)号：US20110086240A1
公开(公告)日：2011-04-14
申请号：US12579316
申请日：2009-10-14
申请人： Xiaohai XIANG , Yun-Fei LI , Jinqiu ZHANG , Hongping YUAN , Xianzhong ZENG , Hai SUN
发明人： Xiaohai XIANG , Yun-Fei LI , Jinqiu ZHANG , Hongping YUAN , Xianzhong ZENG , Hai SUN
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3116 , G11B5/1278 , G11B5/3163 , Y10T428/11
摘要： Various embodiments of the subject disclosure provide a double patterning process that uses two patterning steps to produce a write structure having a nose shape with sharp corners. In one embodiment, a method for forming a write structure on a multi-layer structure comprising a substrate and an insulator layer on the substrate is provided. The method comprises forming a hard mask layer over the insulator layer, performing a first patterning process to form a pole and yoke opening in the hard mask layer, performing a second patterning process to remove rounded corners of the pole and yoke opening in the hard mask layer, removing a portion of the insulator layer corresponding to the pole and yoke opening in the hard mask layer to form a trench in the insulator layer, and filling the trench with a magnetic material.
摘要翻译：本发明公开的各种实施例提供一种双重图案化工艺，其使用两个图案化步骤来产生具有尖角的鼻子形状的写入结构。在一个实施例中，提供了一种用于在包括衬底和衬底上的绝缘体层的多层结构上形成写结构的方法。该方法包括在绝缘体层上形成硬掩模层，执行第一图案化工艺以在硬掩模层中形成极和轭开口，执行第二图案化处理以去除硬掩模中的极和轭开口的圆角去除与硬掩模层中的极和轭开口相对应的绝缘体层的一部分，以在绝缘体层中形成沟槽，并用磁性材料填充沟槽。

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