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1. 发明申请

US20100217494A1 ADAPTIVE SPEED CONTROL DEVICE 有权
标题翻译：自适应速度控制装置
公开(公告)号：US20100217494A1
公开(公告)日：2010-08-26
申请号：US12389867
申请日：2009-02-20
申请人： Ron HEFT , Hiroshi TSUDA , Hiroshi KAWAZOE , Masahide NAKAMURA
发明人： Ron HEFT , Hiroshi TSUDA , Hiroshi KAWAZOE , Masahide NAKAMURA
IPC分类号： G06F7/00
CPC分类号： B60T7/22 , B60T8/32 , B60T2201/02
摘要： An adaptive speed control device includes a posted speed change detecting section, a notification section, a set speed signal receiving section, and an adaptive speed control section. The posted speed change detecting section is configured to detect an upcoming change to a posted speed limit at. The notification section is configured to control a user interface device to notify a new posted speed limit at a prescribed notification timing before the vehicle reaches a transition point. The set speed signal receiving section is configured to accept a set speed signal from a user input device. The adaptive speed control section is configured to change a set speed of the vehicle according to the new posted speed limit and to automatically change a speed to the set speed upon receiving the set speed signal at or after a prescribed activation timing that occurs simultaneously with or after the prescribed notification timing.
摘要翻译：自适应速度控制装置包括发布速度变化检测部分，通知部分，设定速度信号接收部分和自适应速度控制部分。发布的速度变化检测部分被配置为检测即将到来的速度限制的改变。通知部被配置为在车辆到达转变点之前，在规定的通知定时，控制用户接口装置通知新的发布的速度限制。设定速度信号接收部被配置为接受来自用户输入装置的设定速度信号。自适应速度控制部分被配置为根据新的发布速度限制来改变车辆的设定速度，并且在与或者或者同时发生的规定的激活定时或之后接收到设定速度信号时自动将速度改变为设定速度，经过规定的通知时间。

2. 发明申请

US20130232162A1 DOCUMENT CHECKING APPARATUS, COMPUTER-READABLE RECORDING MEDIUM, AND DOCUMENT CHECKING METHOD 审中-公开
标题翻译：文件检查装置，计算机可读记录介质和文件检查方法
公开(公告)号：US20130232162A1
公开(公告)日：2013-09-05
申请号：US13873635
申请日：2013-04-30
申请人： Hiroshi TSUDA
发明人： Hiroshi TSUDA
IPC分类号： G06F17/30
CPC分类号： G06F17/30011 , G06F21/554 , H04L51/12
摘要： A document checking apparatus includes a keyword appearance position extracting unit that extracts keywords and the appearance positions of the keywords from a target document including a confidential document; a keyword pair extracting unit that treats each keyword of the appearance positions of the extracted keywords as a target and determines whether there is another extracted keyword within a predetermined range before and after the target keyword; a feature element matrix creating unit that generates, when it is determined that there is the another keyword, combination information obtained by combining the determination target keyword and the another keyword in association with anteroposterior information of the appearance positions of the keywords; and a computing unit that determines whether the number of combination information, among the plurality of combination information of the generated target document, identical to the combination information of the confidential document is not less than a predetermined value.
摘要翻译：文件检查装置包括从包括机密文档的目标文档中提取关键字和关键词的出现位置的关键字出现位置提取单元; 关键字对提取单元，将提取的关键词的出现位置的每个关键字处理为目标，并且确定在目标关键词之前和之后的预定范围内是否存在另一个提取的关键字; 特征元素矩阵创建单元，当确定存在另一个关键字时，通过将关键词的出现位置的前后信息与前述确定目标关键字和另一个关键字组合而获得的组合信息生成; 以及计算单元，其确定所生成的目标文档的多个组合信息中的组合信息的数量是否与机密文档的组合信息相同，不小于预定值。

3. 发明申请

US20120080736A1 SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件
公开(公告)号：US20120080736A1
公开(公告)日：2012-04-05
申请号：US13250516
申请日：2011-09-30
申请人： Takuji ONUMA , Kenichi HIDAKA , Hiromichi TAKAOKA , Yoshitaka KUBOTA , Hiroshi TSUDA , Kiyokazu ISHIGE
发明人： Takuji ONUMA , Kenichi HIDAKA , Hiromichi TAKAOKA , Yoshitaka KUBOTA , Hiroshi TSUDA , Kiyokazu ISHIGE
IPC分类号： H01L29/78
CPC分类号： H01L27/11206 , G11C17/16 , H01L23/5252 , H01L27/0207 , H01L2924/0002 , H01L2924/00
摘要： An antifuse whose internal written information cannot be analyzed even by utilizing methods to determine whether there is a charge-up in the electrodes. The antifuse includes a gate insulation film, a gate electrode, and a first diffusion layer. A second diffusion layer is isolated from the first diffusion layer by way of a device isolator film, and is the same conduction type as the first diffusion layer. The gate wiring is formed as one integrated piece with the gate electrode, and extends over the device isolator film. A common contact couples the gate wiring to the second diffusion layer. The gate electrode is comprised of semiconductor material such as polysilicon that is doped with impurities of the same conduction type as the first diffusion layer. The second diffusion layer is coupled only to the common contact.
摘要翻译：即使利用确定电极中是否有电荷的方法，内部书面信息也无法分析的反熔丝。反熔丝包括栅极绝缘膜，栅电极和第一扩散层。第二扩散层通过器件隔离膜从第一扩散层隔离，并且是与第一扩散层相同的导电类型。栅极布线形成为与栅极电极一体化的部件，并且在器件隔离膜上延伸。常见的接触将栅极布线耦合到第二扩散层。栅电极由掺杂有与第一扩散层相同导电类型的杂质的多晶硅等半导体材料构成。第二扩散层仅耦合到公共接触。

4. 发明申请

US20120026810A1 SEMICONDUCTOR MEMORY DEVICE AND ANTIFUSE PROGRAMMING METHOD 有权
标题翻译：半导体存储器件和抗病毒编程方法
公开(公告)号：US20120026810A1
公开(公告)日：2012-02-02
申请号：US13193186
申请日：2011-07-28
申请人： Takuji ONUMA , Kenichi HIDAKA , Hiromichi TAKAOKA , Yoshitaka KUBOTA , Hiroshi TSUDA
发明人： Takuji ONUMA , Kenichi HIDAKA , Hiromichi TAKAOKA , Yoshitaka KUBOTA , Hiroshi TSUDA
IPC分类号： G11C7/00
CPC分类号： G11C17/18
摘要： An antifuse comprised of an NMOS transistor or an NMOS capacitor includes a first terminal coupled to a gate electrode, a second terminal coupled to a diffusion layer, and a gate insulating film interposed between the gate electrode and the diffusion layer. A programming circuit includes a first programming circuit which has first current drive capability and which performs first programming operation and a second programming circuit which has second current drive capability larger than the first current drive capability and which performs second programming operation to follow the first programming operation. In the first programming operation, the first programming circuit breaks down the gate insulating film by applying a first programming voltage between the first terminal and the second terminal. In the second programming operation, the second programming circuit applies a second programming voltage lower than the first programming voltage between the first terminal and the second terminal.
摘要翻译：由NMOS晶体管或NMOS电容器构成的反熔丝包括耦合到栅电极的第一端子，耦合到扩散层的第二端子和介于栅极电极和扩散层之间的栅极绝缘膜。编程电路包括具有第一电流驱动能力并执行第一编程操作的第一编程电路和具有大于第一电流驱动能力的第二电流驱动能力的第二编程电路，并且执行第二编程操作以跟随第一编程操作。在第一编程操作中，第一编程电路通过在第一端子和第二端子之间施加第一编程电压来分解栅极绝缘膜。在第二编程操作中，第二编程电路在第一端子和第二端子之间施加低于第一编程电压的第二编程电压。

5. 发明申请

US20130033921A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20130033921A1
公开(公告)日：2013-02-07
申请号：US13566575
申请日：2012-08-03
申请人： Hiroshi TSUDA , Yoshitaka KUBOTA , Kenichi HIDAKA , Hiromichi TAKAOKA
发明人： Hiroshi TSUDA , Yoshitaka KUBOTA , Kenichi HIDAKA , Hiromichi TAKAOKA
IPC分类号： G11C11/00
CPC分类号： G11C7/24 , G06F21/75 , G06F21/79 , G11C13/0004 , G11C13/003 , G11C13/0059 , G11C17/16 , G11C2213/74 , G11C2213/79 , H01L23/5252 , H01L27/101 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device using resistive random access memory (ReRAM) elements and having improved tamper resistance is provided. The semiconductor device is provided with a unit cell which stores one bit of cell data and a control circuit. The unit cell includes n ReRAM elements (n being an integer of 2 or larger). At least one of the ReRAM elements is an effective element where the cell data is recorded. In reading the cell data, the control circuit at least selects the effective element and reads data recorded thereon as the cell data.
摘要翻译：提供了一种使用电阻随机存取存储器（ReRAM）元件并具有改进的防篡改性的半导体器件。半导体器件设置有存储一位单元数据的单元单元和控制电路。单位单元包括n个ReRAM元素（n是2或更大的整数）。 ReRAM元素中的至少一个是记录单元数据的有效元素。在读取单元数据时，控制电路至少选择有效元件并将其上记录的数据读取为单元数据。

6. 发明申请

US20120306634A1 HOST VEHICLE WITH EXTERNALLY PERCEIVABLE CRUISE CONTROL INDICATING DEVICE 有权
标题翻译：具有外部可接受的巡航控制指示装置的主机车辆
公开(公告)号：US20120306634A1
公开(公告)日：2012-12-06
申请号：US13150837
申请日：2011-06-01
申请人： Hiroshi TSUDA , Ronald HEFT
发明人： Hiroshi TSUDA , Ronald HEFT
IPC分类号： B60Q1/00
CPC分类号： B60Q1/50 , B60K31/0008 , B60Q1/2611 , B60W30/143 , B60W2550/308
摘要： A host vehicle includes a cruise control system and an externally perceivable indicating device. The cruise control system is configured to selectively synchronize speed control of the host vehicle with at least one other vehicle. The cruise control system includes a relative position detecting device configured to determine position of the at least one second vehicle relative to the host vehicle, a vehicle speed control device, and a vehicle-to-vehicle communication device. The externally perceivable indicating device is configured to provide an indication of the operating status of the cruise control system.
摘要翻译：主机包括巡航控制系统和外部可感知的指示装置。巡航控制系统被配置为选择性地使本车辆的速度控制与至少一个其他车辆同步。巡航控制系统包括：相对位置检测装置，被配置为确定至少一个第二车辆相对于主车辆的位置，车速控制装置和车对车辆通信装置。外部可感知的指示装置被配置为提供巡航控制系统的操作状态的指示。

7. 发明申请

US20110108923A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110108923A1
公开(公告)日：2011-05-12
申请号：US12938662
申请日：2010-11-03
申请人： Yoshitaka KUBOTA , Hiroshi TSUDA , Kenichi HIDAKA , Takuji ONUMA , Hiromichi TAKAOKA
发明人： Yoshitaka KUBOTA , Hiroshi TSUDA , Kenichi HIDAKA , Takuji ONUMA , Hiromichi TAKAOKA
IPC分类号： H01L27/092 , H01L21/8238
CPC分类号： H01L27/0629 , H01L23/5252 , H01L27/11206 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device has a conventional NMOS transistor and an NMOS transistor functioning as an anti-fuse element and having an n type channel region. The conventional NMOS transistor is equipped with an n type extension region and a p type pocket region, while the anti-fuse element is not equipped with an extension region and a pocket region. This makes it possible to improve the performance of the transistor and at the same time improve the characteristics of the anti-fuse element after breakdown of its gate dielectric film.
摘要翻译：半导体器件具有常规的NMOS晶体管和用作反熔丝元件并具有n型沟道区的NMOS晶体管。传统的NMOS晶体管配备有n型延伸区域和p型袋区域，而反熔丝元件没有配备延伸区域和口袋区域。这使得可以提高晶体管的性能，同时提高其栅极电介质膜击穿之后的抗熔丝元件的特性。

8. 发明申请

US20110019494A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 失效
标题翻译：制造半导体器件和半导体器件的方法
公开(公告)号：US20110019494A1
公开(公告)日：2011-01-27
申请号：US12826100
申请日：2010-06-29
申请人： Hiroshi TSUDA , Yoshitaka KUBOTA , Hiromichi TAKAOKA
发明人： Hiroshi TSUDA , Yoshitaka KUBOTA , Hiromichi TAKAOKA
IPC分类号： G11C17/16 , H01L23/525 , H01L21/66
CPC分类号： H01L23/5256 , G11C17/16 , H01L22/14 , H01L22/20 , H01L23/5252 , H01L2924/0002 , H01L2924/00
摘要： In a method of manufacturing a semiconductor device, element properties of an element property extraction pattern formed on a semiconductor wafer is extracted as element properties of a current control element corresponding to the element property extraction pattern. A supply energy to the current control element is set which is formed between nodes on the semiconductor wafer, based on the extracted element properties. The set supply energy is supplied to the current control element to irreversible control an electrical connection between the nodes through the device breakdown by the current control element.
摘要翻译：在制造半导体器件的方法中，提取形成在半导体晶片上的元素特性提取图案的元素性质作为与元素特性提取图案对应的电流控制元件的元素特性。基于所提取的元件特性，设置在半导体晶片上的节点之间形成对电流控制元件的供给能量。设定的供给能量被提供给电流控制元件，以通过由电流控制元件击穿的装置不可逆地控制节点之间的电连接。

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