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1. 发明授权

US06414808B1 Patterning of magnetic media 有权
标题翻译：磁性介质图案化
公开(公告)号：US06414808B1
公开(公告)日：2002-07-02
申请号：US09405882
申请日：1999-09-24
申请人： Rolf Allenspach , Andreas Bischof , Urs T. Duerig
发明人： Rolf Allenspach , Andreas Bischof , Urs T. Duerig
IPC分类号： G11B509
CPC分类号： B82Y10/00 , G11B5/64 , G11B5/65 , G11B5/653 , G11B5/656 , G11B5/743 , G11B5/84 , G11B5/855 , G11B2005/0002 , H01F41/34
摘要： A method of generating or modifying patterns of topically specific magnetic modifications in an at least potentially ferromagnetic surface comprising the step of subjecting the surface to a controlled impact of energized subatomic particles, preferably in the form of electron radiation, directed at the surface for producing a predetermined pattern of discrete magnetized areas on the surface. The method serves to increase the density of magnetically coded information on magnetic media, such as hard disks.
摘要翻译：一种在至少潜在的铁磁表面中产生或修改局部特定的磁性修饰图案的方法，包括以下步骤：使表面受到受激的亚原子粒子的受控影响，优选以电子辐射的形式，指向该表面以产生表面上离散磁化区域的预定图案。该方法用于增加诸如硬盘的磁介质上的磁编码信息的密度。

2. 发明授权

US06960782B2 Electronic devices with fullerene layers 有权
标题翻译：具有富勒烯层的电子器件
公开(公告)号：US06960782B2
公开(公告)日：2005-11-01
申请号：US10425135
申请日：2003-04-28
申请人： Rolf Allenspach , Urs T. Duerig , Walter Riess , Reto Schlittler
发明人： Rolf Allenspach , Urs T. Duerig , Walter Riess , Reto Schlittler
IPC分类号： H01L21/28 , H01L21/283 , H01L29/88 , H01L51/00 , H01L51/30 , H01L29/12
CPC分类号： H01L51/0583 , B82Y10/00 , H01L51/002 , H01L51/0046 , Y10S977/735
摘要： Described is an electronic device comprising a junction formed between a first fullerene layer having a first doping concentration and a second fullerene layer having a second doping concentration different from the first doping concentration. The first doping concentration may be zero. The first and/or the second fullerene layer may be a monolayer. The second fullerene layer may comprise an electron donor. One example of such a device is a diode wherein the first fullerene layer is connected to an anode and the second fullerene layer is connected to a cathode. Another example is a field effect transistor wherein the first fullerene layer serves as a gate region and the second fullerene layer serves as a channel region. The second fullerene layer may alternatively comprise an electron acceptor. At least one of the first and second fullerene layers may be formed from C60, or may consist of a single bucky ball.
摘要翻译：描述了一种电子器件，其包括形成在具有第一掺杂浓度的第一富勒烯层和具有不同于第一掺杂浓度的第二掺杂浓度的第二富勒烯层之间的结。第一掺杂浓度可以为零。第一和/或第二富勒烯层可以是单层。第二富勒烯层可以包括电子给体。这种器件的一个实例是其中第一富勒烯层连接到阳极并且第二富勒烯层连接到阴极的二极管。另一个实例是场效应晶体管，其中第一富勒烯层用作栅极区，第二富勒烯层用作沟道区。第二富勒烯层可以可选地包括电子受体。第一和第二富勒烯层中的至少一个可以由C60形成，或者可以由单个的凹陷球组成。

3. 发明授权

US5200936A Magneto-optic method and apparatus for recording and retrieving high-density digital data 失效
标题翻译：用于记录和检索高密度数字数据的磁光方法和装置
公开(公告)号：US5200936A
公开(公告)日：1993-04-06
申请号：US571796
申请日：1990-08-24
申请人： Rolf Allenspach , Andreas Bischof
发明人： Rolf Allenspach , Andreas Bischof
IPC分类号： G11B11/10 , G11B5/02 , G11B11/105
CPC分类号： G11B11/10543 , G11B11/10504 , G11B11/10515 , G11B11/10536 , G11B11/10584
摘要： A magneto-optic method and apparatus for recording digital data employs selective heating beyond the Curie or compensation temperature T.sub.c of the record material in the presence of an external magnetic field for recording information by rotating the direction of magnetization at the affected record locations, and the selective detection of the state of rotation of the polarization direction at information storage locations in a recording medium by way of analyzing the state of rotation of the light transmitted through said record material. The writing and retrieval of information are performed by means of a sharply pointed tip placed at an essentially constant distance above the recording medium, the sharpness of the apex of said tip determining the resolution and the achievable storage density. The heating of the storage locations is accomplished by means of a laser beam directed onto the recording medium through said slidably arranged tip. For detecting the state of rotation of the polarization direction, a laser beam travelling inside a wave guide arranged in juxtaposition with said recording medium is coupled into said record layer. The light transmitted through the record layer is analyzed by said tip followed by a beam-splitting prism which provides the s- and p-polarized components of the light.

4. 发明授权

US07923263B2 Non-volatile resistance switching memory 有权
标题翻译：非易失性电阻切换存储器
公开(公告)号：US07923263B2
公开(公告)日：2011-04-12
申请号：US12540949
申请日：2009-08-13
申请人： Rolf Allenspach , Johannes G. Bednorz , Gerhard Ingmar Meijer , Chung Hon Lam , Richard Stutz , Daniel Widmer
发明人： Rolf Allenspach , Johannes G. Bednorz , Gerhard Ingmar Meijer , Chung Hon Lam , Richard Stutz , Daniel Widmer
IPC分类号： H01L21/00
CPC分类号： G11C13/0007 , G11C2213/31 , H01L21/31691 , H01L27/101 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1625
摘要： A microelectronic device or non-volatile resistance switching memory comprising the switching material for storing digital information. A process includes a step of depositing the switching material by a CMOS deposition technique at a temperature lower than 400° C.
摘要翻译：一种微电子器件或非易失性电阻切换存储器，包括用于存储数字信息的切换材料。一种方法包括通过CMOS沉积技术在低于400℃的温度下沉积开关材料的步骤。

5. 发明授权

US07897411B2 Non-volatile resistance switching memory 有权
标题翻译：非易失性电阻切换存储器
公开(公告)号：US07897411B2
公开(公告)日：2011-03-01
申请号：US11105849
申请日：2005-04-14
申请人： Rolf Allenspach , Johannes G. Bednorz , Gerhard Ingmar Meijer , Chung Hon Lam , Richard Stutz , Daniel Widmer
发明人： Rolf Allenspach , Johannes G. Bednorz , Gerhard Ingmar Meijer , Chung Hon Lam , Richard Stutz , Daniel Widmer
IPC分类号： H01L21/00
CPC分类号： G11C13/0007 , G11C2213/31 , H01L21/31691 , H01L27/101 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1625
摘要： Processes, apparatus and systems for depositing a switching material that is switchable between conductivity states and where the states are persistent. The invention further relates to a microelectronic device or non-volatile resistance switching memory comprising the switching material for storing digital information. A process includes a step of depositing the switching material by a CMOS deposition technique at a temperature lower than 400° C.
摘要翻译：用于沉积切换材料的过程，装置和系统，其可在导电状态之间切换，并且状态持续存在。本发明还涉及包括用于存储数字信息的切换材料的微电子装置或非易失性电阻切换存储器。一种方法包括通过CMOS沉积技术在低于400℃的温度下沉积开关材料的步骤。

6. 发明授权

US5793743A Reading a magnetic storage medium with a probe that detects tunneling current induced in a magnetic layer by a non-ionizing light beam 失效
标题翻译：读取具有探测器的磁存储介质，该探头通过非电离光束检测在磁性层中感应的隧穿电流
公开(公告)号：US5793743A
公开(公告)日：1998-08-11
申请号：US635944
申请日：1996-05-02
申请人： Urs Th. Duerig , Rolf Allenspach , Peter Gruetter
发明人： Urs Th. Duerig , Rolf Allenspach , Peter Gruetter
IPC分类号： G01Q90/00 , G11B5/33 , G11B11/00 , G11B11/10 , G11B7/00
CPC分类号： G11B5/33 , B82Y10/00 , G11B11/007 , G11B11/10 , Y10S977/86 , Y10S977/861
摘要： An apparatus and a method for retrieving data stored on a magnetic medium with a high resolution is described. It is characterized by measuring a tunneling current which is partly depending on the magnetization of the medium (1). This dependence is caused by irradiating the medium (1) with polarized non-ionizing light. The tunneling current can be measured with a high lateral resolution by applying a probing tip (2) as known from conventional scanning tunneling microscopy or related techniques.
摘要翻译： PCT No.PCT / EP93 / 03079 371日期：1996年5月2日 102（e）日期1996年5月2日PCT提交1993年11月3日PCT公布。公开号WO95 / 12882 日期1995年5月11日描述了一种用于以高分辨率检索存储在磁介质上的数据的装置和方法。其特征在于测量部分取决于介质（1）的磁化的隧道电流。这种依赖性是通过用极化的非电离光照射介质（1）引起的。通过应用传统扫描隧道显微镜或相关技术已知的探测尖端（2），可以以高横向分辨率测量隧道电流。

7. 发明申请

US20130322151A1 FERROMAGNETIC DEVICE PROVIDING HIGH DOMAIN WALL VELOCITIES 有权
标题翻译：提供高域网速度的FERROMAGNETIC DEVICE
公开(公告)号：US20130322151A1
公开(公告)日：2013-12-05
申请号：US13985813
申请日：2012-02-03
申请人： Rolf Allenspach , Carl Zinoni
发明人： Rolf Allenspach , Carl Zinoni
IPC分类号： H01L43/02 , G11C11/16 , H01L43/12
CPC分类号： G11C11/161 , G11C11/16 , G11C19/0808 , H01L27/222 , H01L43/02 , H01L43/10 , H01L43/12
摘要： The invention is directed to a ferromagnetic device (10), having an elongated structure extending along a longitudinal direction (11), comprising a ferromagnetic material, wherein a transverse cross section (20) of the ferromagnetic material, perpendicular to said longitudinal direction, is designed to provide a domain wall velocity above the Walker breakdown limit of the ferromagnetic material. In particular, at least a portion (21-23) of a peripheral contour of the ferromagnetic material forms, in the transverse cross-section (20), a non-orthogonal convex set. For example, the whole peripheral contour may realize a (non-orthogonal) convex polygon.
摘要翻译：本发明涉及一种铁磁装置（10），其具有沿纵向（11）延伸的细长结构，其包括铁磁材料，其中铁磁材料的横向横截面（20）垂直于所述纵向是旨在提供高于铁磁材料的沃克击穿极限的畴壁速度。特别地，铁磁材料的周边轮廓的至少一部分（21-23）在横截面（20）中形成非正交凸集。例如，整个外围轮廓可以实现（非正交）凸多边形。

8. 发明授权

US07897957B2 Non-volatile resistance switching memory 有权
公开(公告)号：US07897957B2
公开(公告)日：2011-03-01
申请号：US12541411
申请日：2009-08-14
申请人： Rolf Allenspach , Johannes G. Bednorz , Gerhard Ingmar Meijer , Chung Hon Lam , Richard Stutz , Daniel Widmer
发明人： Rolf Allenspach , Johannes G. Bednorz , Gerhard Ingmar Meijer , Chung Hon Lam , Richard Stutz , Daniel Widmer
IPC分类号： H01L47/00
CPC分类号： G11C13/0007 , G11C2213/31 , H01L21/31691 , H01L27/101 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1625
摘要： A microelectronic device or non-volatile resistance switching memory comprising the switching material for storing digital information. A process includes a step of depositing the switching material by a CMOS deposition technique at a temperature lower than 400° C.

9. 发明申请

US20090305487A1 NON-VOLATILE RESISTANCE SWITCHING MEMORY 有权
公开(公告)号：US20090305487A1
公开(公告)日：2009-12-10
申请号：US12541411
申请日：2009-08-14
申请人： Rolf Allenspach , Johannes G. Bednorz , Gerhard Ingmar Meijer , Chung Hon Lam , Richard Stutz , Daniel Widmer
发明人： Rolf Allenspach , Johannes G. Bednorz , Gerhard Ingmar Meijer , Chung Hon Lam , Richard Stutz , Daniel Widmer
IPC分类号： H01L21/20
CPC分类号： G11C13/0007 , G11C2213/31 , H01L21/31691 , H01L27/101 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1625
摘要： A microelectronic device or non-volatile resistance switching memory comprising the switching material for storing digital information. A process includes a step of depositing the switching material by a CMOS deposition technique at a temperature lower than 400° C.

10. 发明授权

US6104189A Magnetoresistive sensor having at least one layer with a pinned magnetization direction 失效
标题翻译：磁阻传感器具有至少一个具有钉扎磁化方向的层
公开(公告)号：US6104189A
公开(公告)日：2000-08-15
申请号：US95038
申请日：1998-06-10
申请人： Rolf Allenspach , Wolfgang F. Weber
发明人： Rolf Allenspach , Wolfgang F. Weber
IPC分类号： G01R33/09 , G11B5/00 , G11B5/31 , G11B5/39 , H01F10/32 , G11B5/127 , H01F7/06 , H01L43/00
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , H01F10/3281 , G11B2005/3996 , G11B5/00 , G11B5/3163 , Y10T29/49044 , Y10T428/12465
摘要： A magnetoresistive spin valve sensor is described. Such a sensor is also known as a GMR sensor or giant magnetoresistive sensor. The layers (24, 26, 28) of the sensor are mounted on a substrate (20) having steps or terraces on one of its face. The steps or terraces on the substrate's surface cooperate with one or more of the ferromagnetic layers (24, 28) of the sensor to determine the layers' magnetic properties. Specifically, the thickness of one or more of the sensor's layers can be set above or below a critical thickness which determines whether the easy direction of uniaxial magnetization of a layer of that particular material is fixed or "pinned". If pinned, the layer has a high coercive field. Thus, the new device avoids a biasing layer to pin any of the magnetic layers. Preferably the easy axes of the first two ferromagnetic layers (24, 28) are set at 90.degree. to one another in the zero applied field condition by appropriate choice of layer thickness. A method for manufacturing and several fields of use of the sensor are also disclosed.
摘要翻译：描述了一种磁阻自旋阀传感器。这种传感器也称为GMR传感器或巨磁阻传感器。传感器的层（24,26,28）安装在其表面之一上具有台阶或台阶的基板（20）上。衬底表面上的台阶或台阶与传感器的一个或多个铁磁层（24,28）配合，以确定层的磁特性。具体地，可以将传感器层中的一个或多个的厚度设置在临界厚度的上方或下方，该临界厚度确定该特定材料的层的单轴磁化的容易方向是固定的还是“固定的”。如果被固定，则该层具有高矫顽力场。因此，新器件避免了偏置层来钉住任何磁性层。优选地，通过适当选择层厚度，在零施加场条件下将前两个铁磁层（24,28）的易轴设置为彼此成90°。还公开了一种制造方法和传感器的若干使用领域。

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