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    • 1. 发明授权
    • Electronic devices with fullerene layers
    • 具有富勒烯层的电子器件
    • US06960782B2
    • 2005-11-01
    • US10425135
    • 2003-04-28
    • Rolf AllenspachUrs T. DuerigWalter RiessReto Schlittler
    • Rolf AllenspachUrs T. DuerigWalter RiessReto Schlittler
    • H01L21/28H01L21/283H01L29/88H01L51/00H01L51/30H01L29/12
    • H01L51/0583B82Y10/00H01L51/002H01L51/0046Y10S977/735
    • Described is an electronic device comprising a junction formed between a first fullerene layer having a first doping concentration and a second fullerene layer having a second doping concentration different from the first doping concentration. The first doping concentration may be zero. The first and/or the second fullerene layer may be a monolayer. The second fullerene layer may comprise an electron donor. One example of such a device is a diode wherein the first fullerene layer is connected to an anode and the second fullerene layer is connected to a cathode. Another example is a field effect transistor wherein the first fullerene layer serves as a gate region and the second fullerene layer serves as a channel region. The second fullerene layer may alternatively comprise an electron acceptor. At least one of the first and second fullerene layers may be formed from C60, or may consist of a single bucky ball.
    • 描述了一种电子器件,其包括形成在具有第一掺杂浓度的第一富勒烯层和具有不同于第一掺杂浓度的第二掺杂浓度的第二富勒烯层之间的结。 第一掺杂浓度可以为零。 第一和/或第二富勒烯层可以是单层。 第二富勒烯层可以包括电子给体。 这种器件的一个实例是其中第一富勒烯层连接到阳极并且第二富勒烯层连接到阴极的二极管。 另一个实例是场效应晶体管,其中第一富勒烯层用作栅极区,第二富勒烯层用作沟道区。 第二富勒烯层可以可选地包括电子受体。 第一和第二富勒烯层中的至少一个可以由C60形成,或者可以由单个的凹陷球组成。