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1. 发明授权

US4690725A Purification of Cd and Te by zone refining 失效
标题翻译：通过区域精炼纯化Cd和Te
公开(公告)号：US4690725A
公开(公告)日：1987-09-01
申请号：US800932
申请日：1985-11-22
申请人： Roelof P. Bult , Alan B. I. Bollong , Robert F. Redden
发明人： Roelof P. Bult , Alan B. I. Bollong , Robert F. Redden
IPC分类号： C01B19/00 , C01B19/02 , C22B9/02 , C22B17/06 , C22B61/00 , C30B13/00 , C30B29/02 , C30B13/02 , C30B13/08
CPC分类号： C01B19/02 , C01B19/002 , C22B17/06 , C22B9/02 , C30B13/00 , C30B29/02 , C01P2002/80 , C01P2002/89 , Y02P10/234
摘要： Cd and Te are purified by multiple-pass zone refining in the presence of a small amount of an added gettering substance chosen from Cd, Te and CdTe. In the purification of Cd, Te, or CdTe is added, the amount of Te or of Te in CdTe being less than the amount of Te in the Cd-rich eutectic composition between Cd and Te. In the purification of Te, Cd or CdTe is added, the amount of Cd or of Cd in CdTe being less than the amount of Cd in the Te-rich eutectic composition between Cd and Te. The Cd and Te so purified have an improved purity as witnessed by SSMS analyses, the increased ductility of the Cd and a much higher yield of the number of slices of CdHgTe produced with the refined Cd and Te meeting the specifications for carrier concentration and mobility.
摘要翻译： Cd和Te在少量添加的选自Cd，Te和CdTe的吸气物质的存在下，通过多通道精制进行纯化。在Cd，Te或CdTe的纯化中，CdTe中的Te或Te的量小于Cd和Te之间的富含Cd的共晶组成中的Te量。在Te的纯化中，添加Cd或CdTe，CdTe中的Cd或Cd的量小于Cd和Te之间的富含Te的共晶组成中的Cd的量。如此纯化的Cd和Te具有改进的纯度，如通过SSMS分析所证明的，Cd的延展性增加，并且用精炼的Cd和Te产生的Cd HgTe切片数量高得多，满足载流子浓度和迁移率的规格。

2. 发明授权

US4888051A Method for the zone refining of gallium 失效
标题翻译：镓的区域精炼方法
公开(公告)号：US4888051A
公开(公告)日：1989-12-19
申请号：US233710
申请日：1988-08-19
申请人： Alan B. I. Bollong , Roelof P. Bult , Gary T. Proux
发明人： Alan B. I. Bollong , Roelof P. Bult , Gary T. Proux
IPC分类号： C22B9/14 , C22B58/00 , C30B15/00
CPC分类号： C22B58/00 , C22B9/14 , C30B15/00 , C30B29/42
摘要： Gallium is zone refined in a stationary, vertical, double annulus refiner. Impure gallium is contained between walls of a first annulus that are made of a material that does not impart impurities to the gallium. At least one of the walls is made of a flexible material. A cooling fluid is circulated through a second annulus enveloping the first annulus. The gallium is zone refined by moving through the gallium ingot one or more molten zones formed by radio frequency waves from at least one reciprocating radio frequency heating induction coil. After the necessary number of passes, the ingot is cropped without introducing contaminants and refined gallium with purities between 79 and 89 is recovered. LEC single crystal GaAs made with the so refined gallium has very uniform electrical characteristics.
摘要翻译：镓是在固定的，垂直的双环形精炼机中进行区域精制。不规则的镓包含在由不向镓赋予杂质的材料制成的第一环的壁之间。至少一个壁由柔性材料制成。冷却流体通过包围第一环的第二环带循环。镓通过从至少一个往复式射频加热感应线圈通过镓锭移动通过射频波形成的一个或多个熔融区域进行区域精制。经过必要的通过次数后，晶锭被切割而不引入污染物，精炼的镓的纯度在79和89之间被回收。由精炼的镓制成的LEC单晶GaAs具有非常均匀的电气特性。

3. 发明授权

US5513834A Preparation of high purity elements 失效
标题翻译：高纯度元素的制备
公开(公告)号：US5513834A
公开(公告)日：1996-05-07
申请号：US339453
申请日：1994-11-14
申请人： Gerald B. Feldewerth , Alan B. I. Bollong , David C. Bunnell
发明人： Gerald B. Feldewerth , Alan B. I. Bollong , David C. Bunnell
IPC分类号： B01D3/00 , C01B19/02 , C22B9/02 , C22C7/00 , C22C18/00 , C22C20/00 , C22C28/00 , C30B13/00 , C21D11/00
CPC分类号： C01B19/02 , C01P2002/89 , C01P2006/80
摘要： Described is in situ refining high purity elements in Groups IIA and VIB of the Periodic Table in a hermetically sealed apparatus by distilling, condensing and zone refining material within the apparatus.
摘要翻译：描述的是通过在设备内蒸馏，冷凝和分离精制材料，在气密密封的设备中原位精炼周期表IIA和VIB族中的高纯度元素。

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