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1. 发明申请

US20060190850A1 Method for optimizing the geometry of structural elements of a circuit design pattern and method for producing a photomask 审中-公开
标题翻译：用于优化电路设计图案的结构元件的几何形状的方法和用于制造光掩模的方法
公开(公告)号：US20060190850A1
公开(公告)日：2006-08-24
申请号：US11348549
申请日：2006-02-07
申请人： Roderick Kohle , Burkhard Ludwig , Michael Heissmeier , Armin Semmler , Dirk Meyer , Christoph Nolscher , Jorg Thiele
发明人： Roderick Kohle , Burkhard Ludwig , Michael Heissmeier , Armin Semmler , Dirk Meyer , Christoph Nolscher , Jorg Thiele
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： A method for optimizing the geometry of structural elements of a circuit pattern involves providing an overall circuit pattern of the circuit design and a plurality of basic patterns. Subsequently, the circuit pattern of the circuit design is iteratively decomposed into corresponding basic patterns in order to classify those parts of the circuit pattern of the plurality of structural elements wherein there exists a match with the basic pattern. Subsequently, further basic patterns are determined for those parts of the circuit pattern which were not previously classified. After applying a specification for optimizing the geometry of the structural elements, the optimized basic patterns are inserted into the circuit design thus achieving an improvement of the optical imaging properties.
摘要翻译：用于优化电路图案的结构元件的几何形状的方法包括提供电路设计和多个基本图案的总体电路图案。随后，将电路设计的电路图案迭代地分解为对应的基本图案，以便对存在与基本图案相匹配的多个结构元件的电路图案的那些部分进行分类。随后，对于以前未分类的电路图形的那些部分，确定了另外的基本模式。在应用用于优化结构元件的几何形状的规范之后，将优化的基本图案插入到电路设计中，从而实现光学成像特性的改进。

2. 发明授权

US06660437B2 Alternating phase mask 有权
标题翻译：交替相位掩模
公开(公告)号：US06660437B2
公开(公告)日：2003-12-09
申请号：US10158733
申请日：2002-05-30
申请人： Christoph Friedrich , Uwe Griesinger , Michael Heissmeier , Burkhard Ludwig , Molela Moukara , Rainer Pforr
发明人： Christoph Friedrich , Uwe Griesinger , Michael Heissmeier , Burkhard Ludwig , Molela Moukara , Rainer Pforr
IPC分类号： G03F900
CPC分类号： G03F1/30
摘要： An alternating phase mask having a branched structure containing two opaque segments is described. Two transparent surface segments are disposed on both sides of the segments or the components thereof, respectively. The surface segments are provided with phases that are displaced by 180°±&Dgr; &agr;, whereby &Dgr; &agr; a is not more than 25°. The surface segments are separated by at least one transparent surface boundary segment whose phase is situated between the phases of the adjacent surface segments.
摘要翻译：描述具有包含两个不透明段的分支结构的交替相位掩模。两个透明表面片分别设置在片段的两侧或其部件上。表面段设置有被偏移180°±Δα的相位，由此Δaa不大于25°。表面段由相位位于相邻表面段的相位之间的至少一个透明表面边界段分开。

3. 发明授权

US06680151B2 Alternating phase mask 有权
标题翻译：交替相位掩模
公开(公告)号：US06680151B2
公开(公告)日：2004-01-20
申请号：US10174646
申请日：2002-06-18
申请人： Michael Heissmeier , Markus Hofsäss , Burkhard Ludwig , Molela Moukara , Christoph Nölscher
发明人： Michael Heissmeier , Markus Hofsäss , Burkhard Ludwig , Molela Moukara , Christoph Nölscher
IPC分类号： G03F900
CPC分类号： G03F1/30
摘要： An alternating phase mask is described in which a propagation of a T phase conflict which occurs in the case of a T pattern structure is avoided by producing a phase jump at one of the 90° corners of the T pattern structure. First and second transparent area segments, which produce a mutual phase difference of 180°, are separated by a narrow slot running approximately at 45° toward the corner of the T pattern structure. The structure containing the transparent area segments, which are separated by the slot running at 45°, can also be provided at the other corner of the T structure providing a solution for each T conflict. The trimming mask for eliminating the dark line artificially produced by the 180° phase jump is a conventional mask and requires no additional coloration. Moreover, alignment errors are minimal on account of the small number of trimming openings.
摘要翻译：描述了一种交替相位掩模，其中通过在T图案结构的90°角之一处产生相位跳跃来避免在T图案结构的情况下发生的T相冲突的传播。产生180°相互相位差的第一透明区域和第二透明区域段通过大致45度向T图案结构的拐角延伸的窄槽分隔开。包含由45°运行的槽隔开的透明区域段的结构也可以设置在T结构的另一个角上，为每个T冲突提供解决方案。用于消除由180°相位跳跃人为产生的暗线的修剪掩模是常规的掩模，并且不需要额外的着色。此外，由于修剪开口的数量少，对准误差最小。

4. 发明授权

US06730463B2 Method for determining and removing phase conflicts on alternating phase masks 有权
标题翻译：用于确定和消除交替相位掩模上相位冲突的方法
公开(公告)号：US06730463B2
公开(公告)日：2004-05-04
申请号：US10126371
申请日：2002-04-19
申请人： Michael Heissmeier , Markus Hofsäss , Burkhard Ludwig , Molela Moukara , Christoph Nölscher
发明人： Michael Heissmeier , Markus Hofsäss , Burkhard Ludwig , Molela Moukara , Christoph Nölscher
IPC分类号： G03C500
CPC分类号： G03F1/30
摘要： A photoresist layer on a substrate wafer is exposed in first sections with a first exposure radiation and in second sections with a second exposure radiation that is phase-shifted by 180°. The first and second sections adjoin one another in boundary regions in which the photoresist layer is artificially not sufficiently exposed. Where a distance between these boundary regions is smaller than a photolithographically critical, least distance, the photoresist layer is exposed, at a first boundary region, with a third exposure radiation and at a second boundary region with a fourth exposure radiation phase-shifted by 180°. A trim mask provided for the process has a first translucent region and a second translucent region. The first light-transparent region and the second light-transparent region are fashioned such that the light passing through the first light-transparent region and the light passing through the second light-transparent region has a phase displacement of 180°.
摘要翻译：衬底晶片上的光致抗蚀剂层在具有第一曝光辐射的第一部分中暴露，并且在第二部分中具有相移180°的第二曝光辐射。第一和第二部分在其中光致抗蚀剂层人为地不充分暴露的边界区域彼此相邻。在这些边界区域之间的距离小于光刻临界的最小距离的情况下，光致抗蚀剂层在第一边界区域处以第三曝光辐射暴露，并且在第二边界区域处以第四曝光辐射相位偏移180° °。为该工艺提供的修剪掩模具有第一半透明区域和第二半透明区域。第一透光区域和第二透光区域被形成为使得穿过第一透光区域的光和穿过第二透光区域的光线具有180°的相位偏移。

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