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    • 1. 发明授权
    • High purity cobalt sputter target and process of manufacturing the same
    • 高纯钴溅射靶及其制造工艺相同
    • US06391172B2
    • 2002-05-21
    • US09139240
    • 1998-08-25
    • Robert S. ColeMathew S. CooperStephen P. TurnerYinshi LiuMichael McCartyRodney L. Scagline
    • Robert S. ColeMathew S. CooperStephen P. TurnerYinshi LiuMichael McCartyRodney L. Scagline
    • C22C1900
    • C22C19/07C22F1/10C23C14/3414
    • A high purity cobalt sputter target is disclosed which contains a face centered cubic (fcc) phase and a hexagonal close packed (hcp) phase, wherein the value of the ratio of X-ray diffraction peak intensity, Ifcc(200)/Ihcp(10 {overscore (1)}1), is smaller than the value of the same ratio in a high purity cobalt material obtained by cooling fcc cobalt to room temperature from the high temperature at which it is molten. High purity cobalt is defined as having an oxygen content of not more than 500 ppm, a Ni content of not more than 200 ppm, contents of Fe, Al and Cr of not more than 50 ppm each, and Na and K of less than 0.5 ppm. The disclosed sputter target is manufactured by subjecting the material to cold-working treatments (less than 422° C.). Annealing the material, at a temperature in the range 300-422° C. for several hours, between cold working treatments significantly increases the amount of cold work which could be imparted into the material. The high purity cobalt is deformed in such a way so as to cause the (0002) hcp plane to be tilted between 10-35° from the target normal. The aforementioned phase proportions and crystallographic texture significantly improves the sputtering efficiency and material utilization.
    • 公开了一种高纯度钴溅射靶,其包含面心立方(fcc)相和六方密堆积(hcp)相,其中X射线衍射峰强度Ifcc(200)/ Ihcp(10 {overscore(1)} 1)小于通过从熔融的高温将fcc钴冷却至室温获得的高纯度钴材料的相同比例的值。 高纯度钴被定义为氧含量不大于500ppm,Ni含量不超过200ppm,Fe,Al和Cr含量不大于50ppm,Na和K小于0.5 ppm。 公开的溅射靶是通过对材料进行冷加工处理(小于422℃)来制造的。 在300-422℃的温度范围内将材料退火几个小时,在冷加工处理之间显着地增加可以赋予材料的冷加工量。 高纯度钴以这样的方式变形,以使(0002)hcp平面从目标法线倾斜10-35°。 上述相比例和晶体结构显着提高了溅射效率和材料利用率。
    • 2. 发明授权
    • High purity cobalt sputter target and process of manufacturing the same
    • 高纯钴溅射靶及其制造工艺相同
    • US06585866B2
    • 2003-07-01
    • US10104582
    • 2002-03-21
    • Robert S. ColeMathew S. CooperStephen P. TurnerYinshi LiuMichael McCartyRodney L. Scagline
    • Robert S. ColeMathew S. CooperStephen P. TurnerYinshi LiuMichael McCartyRodney L. Scagline
    • C22C1907
    • C22C19/07C22F1/10C23C14/3414
    • A high purity cobalt sputter target is disclosed which contains a face centered cubic (fcc) phase and a hexagonal close packed (hcp) phase, wherein the value of the ratio of X-ray diffraction peak intensity, Ifcc(200)/Ihcp(10 1), is smaller than the value of the same ratio in a high purity cobalt material obtained by cooling fcc cobalt to room temperature from the high temperature at which it is molten. High purity cobalt is defined as having an oxygen content of not more than 500 ppm, a Ni content of not more than 200 ppm, contents of Fe, Al and Cr of not more than 50 ppm each, and Na and K of less than 0.5 ppm. The disclosed sputter target is manufactured by subjecting the material to cold-working treatments (less than 4221C). Annealing the material, at a temperature in the range 300-4221C for several hours, between cold working treatments significantly increases the amount of cold work which could be imparted into the material. The high purity cobalt is deformed in such a way so as to cause the (0002) hcp plane to be tilted between 10-351 from the target normal. The aforementioned phase proportions and crystallographic texture significantly improves the sputtering efficiency and material utilization.
    • 公开了一种高纯度钴溅射靶,其包含面心立方(fcc)相和六方密堆积(hcp)相,其中X射线衍射峰强度Ifcc(200)/ Ihcp(10 1)小于通过从熔融的高温将fcc钴冷却至室温而获得的高纯度钴材料的相同比例的值。 高纯度钴被定义为氧含量不大于500ppm,Ni含量不超过200ppm,Fe,Al和Cr含量不大于50ppm,Na和K小于0.5 ppm。 所公开的溅射靶是通过对材料进行冷加工处理(小于4221℃)来制造的。 在300-4221℃的温度范围内将材料退火几个小时,在冷加工处理之间显着增加可以赋予材料的冷加工量。 高纯度钴以这样的方式变形,使得(0002)hcp平面从目标法线倾斜10-351。 上述相比例和晶体结构显着提高了溅射效率和材料利用率。
    • 3. 发明授权
    • Write head having independent side shield and trailing shield throat height
    • 写头具有独立的侧面屏蔽和尾部屏蔽喉部高度
    • US08139320B2
    • 2012-03-20
    • US11966086
    • 2007-12-28
    • Wen-Chien David HsiaoYinshi LiuYi Zheng
    • Wen-Chien David HsiaoYinshi LiuYi Zheng
    • G11B5/127
    • G11B5/3163G11B5/1278G11B5/3116G11B5/315
    • A magnetic write head for perpendicular magnetic recording. The magnetic write head includes a write pole having a pole tip region and a flared region. The write pole also has a trailing, wrap-around magnetic shield that is separated from the sides of the write pole by a non-magnetic side gap layer. The write head is formed such that the side gap spacing is larger in the flared region than in the pole tip region. This varying gap spacing can be formed by depositing a non-magnetic material using a collimated sputter deposition aligned substantially perpendicular to the air bearing surface. This collimated sputtering deposits the non-magnetic material more readily on the sides of the write pole in the flared region than in the pole tip region.
    • 用于垂直磁记录的磁写头。 磁写头包括具有极尖区域和扩口区域的写入极。 写极还具有通过非磁性侧间隙层与写入极的两侧分离的后围环绕磁屏蔽。 写头形成为使得扩张区域中的侧间隙间隔大于极尖区域中的间隙间距。 可以通过使用基本垂直于空气轴承表面排列的准直溅射沉积物沉积非磁性材料来形成这种变化的间隙间隔。 这种准直的溅射使非磁性材料更容易地在扩展区域中的写入极的侧面上比在磁极尖端区域中沉积。