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    • 3. 发明授权
    • Visible light surface emitting semiconductor laser
    • 可见光表面发射半导体激光器
    • US5642376A
    • 1997-06-24
    • US26326
    • 1993-03-04
    • Gregory R. OlbrightJack L. Jewell
    • Gregory R. OlbrightJack L. Jewell
    • H01S5/00H01S5/04H01S5/183H01S5/323H01S5/34H01S5/343H01S5/347H01S3/19
    • B82Y20/00H01S5/18308H01S2302/00H01S5/041H01S5/18341H01S5/18358H01S5/18369H01S5/18377H01S5/2063H01S5/3215H01S5/32308H01S5/32325H01S5/32341H01S5/34326H01S5/34333H01S5/347
    • A vertical-cavity surface-emitting laser is disclosed comprising a laser cavity sandwiched between two distributed Bragg reflectors. The laser cavity comprises a pair of spacer layers surrounding one or more active, optically emitting quantum-well layers having a bandgap in the visible which serve as the active optically emitting material of the device. The thickness of the laser cavity is m .lambda./2n.sub.eff where m is an integer, .lambda. is the free-space wavelength of the laser radiation and n.sub.eff is the effective index of refraction of the cavity. Electrical pumping of the laser is achieved by heavily doping the bottom mirror and substrate to one conductivity-type and heavily doping regions of the upper mirror with the opposite conductivity type to form a diode structure and applying a suitable voltage to the diode structure. For radiation in the yellow to green portion of the spectrum, the laser includes an active layer of GaP or AlGaP quantum wells and AlP/AlGaP mirrors. For radiation in the blue portion of the spectrum, the laser includes an active region of InGaN or GaN quantum wells and AlN/AlGaN mirrors.
    • 公开了一种垂直腔表面发射激光器,其包括夹在两个分布式布拉格反射器之间的激光腔。 激光腔包括一对间隔层,该间隔层围绕一个或多个活性光学发光量子阱层,其在可见光中具有带隙,其用作该器件的有源发光材料。 激光腔的厚度为mλ/ 2neff,其中m为整数,λ为激光辐射的自由空间波长,neff为空腔的有效折射率。 通过将底部反射镜和衬底重新掺杂到具有相反导电类型的上反射镜的一个导电类型和重掺杂区域以形成二极管结构并向二极管结构施加合适的电压来实现激光器的电泵浦。 对于光谱的黄色到绿色部分的辐射,激光器包括GaP或AlGaP量子阱和AlP / AlGaP反射镜的有源层。 对于光谱蓝色部分的辐射,激光器包括InGaN或GaN量子阱和AlN / AlGaN反射镜的有源区。
    • 5. 发明授权
    • Integration of transistors with vertical cavity surface emitting lasers
    • 晶体管与垂直腔表面发射激光器的集成
    • US5283447A
    • 1994-02-01
    • US823496
    • 1992-01-21
    • Gregory R. OlbrightJack L. Jewell
    • Gregory R. OlbrightJack L. Jewell
    • H01S5/00H01L27/15H01L31/153H01S5/026H01S5/042H01S5/183H01S5/34H01L33/00
    • H01S5/18341H01L27/15H01L31/153H01S5/0261H01S5/0262H01S5/0425H01S5/18305H01S5/18308H01S5/3428H01S5/423
    • Optoelectronic integrated circuits are disclosed comprising a vertical-cavity surface emitting laser (VCSEL) and a transistor. The VCSEL comprises a laser cavity sandwiched between two distributed Bragg reflectors. The laser cavity comprises a pair of spacer layers surrounding one or more active, optically emitting quantum-well layers having a bandgap in the visible range which serve as the active optically emitting material of the device. The thickness of the laser cavity is m .lambda./2n.sub.eff where m is an integer, .lambda. is the free-space wavelength of the laser radiation and n.sub.eff is the effective index of refraction of the cavity. Electrical pumping of the laser is achieved by heavily doping the bottom mirror and substrate to one conductivity-type and heavily doping the regions of the upper mirror with the opposite conductivity type to form a diode structure and applying a suitable voltage to the diode structure. Embodiments are disclosed which integrate the VCSEL with bipolar and FET transistors as well as phototransistors.
    • 公开了包括垂直腔表面发射激光器(VCSEL)和晶体管的光电集成电路。 VCSEL包括夹在两个分布式布拉格反射器之间的激光腔。 激光腔包括一对围绕一个或多个活性的光学发光量子阱层的间隔层,所述有源光发射量子阱层在可见光范围内具有用作器件的有源发光材料的带隙。 激光腔的厚度是m(λ)/ 2neff,其中m是整数,(λ)是激光辐射的自由空间波长,neff是空腔的有效折射率。 通过将底部反射镜和衬底重掺杂到一种导电类型并以相反的导电类型重掺杂上反射镜的区域来实现激光的电泵浦,以形成二极管结构并向二极管结构施加合适的电压。 公开了将VCSEL与双极和FET晶体管以及光电晶体管集成的实施例。
    • 7. 发明授权
    • Visible light emitting vertical cavity surface emitting lasers
    • 可见光发射垂直腔表面发射激光器
    • US5428634A
    • 1995-06-27
    • US972820
    • 1992-11-05
    • Robert P. BryanGregory R. OlbrightJames A. LottRichard P. Schneider, Jr.
    • Robert P. BryanGregory R. OlbrightJames A. LottRichard P. Schneider, Jr.
    • H01S5/183H01S5/343H01S3/19
    • B82Y20/00H01S5/18308H01S5/18341H01S5/18358H01S5/18361H01S5/18369H01S5/18377H01S5/2063H01S5/34326
    • A vertical cavity surface emitting laser that emits visible radiation is built upon a substrate, then having mirrors, the first mirror on top of the substrate; both sets of mirrors being a distributed Bragg reflector of either dielectrics or other materials which affect the resistivity or of semiconductors, such that the structure within the mirror comprises a plurality of sets, each having a thickness of .lambda./2n where n is the index of refraction of each of the sets; each of the mirrors adjacent to spacers which are on either side of an optically active bulk or quantum well layer; and the spacers and the optically active layer are from one of the following material systems: In.sub.z (Al.sub.y Ga.sub.1-y).sub.1-z P, InAlGaAs, AlGaAs, InGaAs, or AlGaP/GaP, wherein the optically active region having a length equal to m .lambda./2n.sub.eff where m is an integer and n.sub.eff is the effective index of refraction of the laser cavity, and the spacer layer and one of the mirrors being transmissive to radiation having a wavelength of .lambda./n, typically within the green to red portion of the visible spectrum.
    • 发射可见光辐射的垂直腔表面发射激光器建立在衬底上,然后具有反射镜,第一反射镜位于衬底顶部; 这两套反射镜是影响电阻率或半导体的电介质或其他材料的分布布拉格反射器,使得反射镜内的结构包括多个组,每组具有λ/ 2n的厚度,其中n是 各组折射; 与在光学活性体积或量子阱层的任一侧上的间隔物相邻的每个反射镜; 并且间隔物和光学活性层来自以下材料体系之一:Inz(Al y Ga 1-y)1-zP,InAlGaAs,AlGaAs,InGaAs或AlGaP / GaP,其中长度等于mλ的光学活性区 / 2neff其中m是整数,neff是激光腔的有效折射率,并且间隔层和一个反射镜对波长为λ/ n的辐射是透射的,通常在辐射的绿色至红色部分内 可见光谱。
    • 8. 发明授权
    • Photodetector with absorbing region having resonant periodic absorption
between reflectors
    • 具有吸收区域的光电检测器在反射器之间具有谐振周期性吸收
    • US5389797A
    • 1995-02-14
    • US943823
    • 1993-02-24
    • Robert P. BryanGregory R. OlbrightThomas M. BrennanJeffrey Y. Tsao
    • Robert P. BryanGregory R. OlbrightThomas M. BrennanJeffrey Y. Tsao
    • H01L31/0232H01L31/0352H01L31/04H01L29/205
    • H01L31/0232H01L31/0352
    • A photodetector that is responsive to a wavelength or wavelengths of interest which have heretofore been unrealized. The photodetector includes a resonant cavity structure bounded by first and second reflectors, the resonant cavity structure being resonant at the wavelength or wavelengths of interest for containing a plurality of standing waves therein. The photodetector further includes a radiation absorbing region disposed within the resonant cavity structure, the radiation absorbing region including a plurality of radiation absorbing layers spaced apart from one another by a distance substantially equal to a distance between antinodes of adjacent ones of the standing waves. Each of radiation absorbing layers is spatially positioned at a location of one of the antinodes of one of the standing waves such that radiation absorption is enhanced. The radiation absorbing layers may be either bulk layers or quantum wells includes a plurality of layers, each of which is comprised of a strained layer of InGaAs. Individual ones of the InGaAs layers are spaced apart from one another by a GaAs barrier layer.
    • 对迄今未被实现的目标波长或波长有反应的光检测器。 光电检测器包括由第一和第二反射器限定的谐振腔结构,谐振腔结构在感兴趣的波长或波长下谐振,用于在其中包含多个驻波。 光电检测器还包括设置在谐振腔结构内的辐射吸收区域,辐射吸收区域包括彼此隔开距离的多个辐射吸收层,其距离基本上等于相邻的驻波的波腹之间的距离。 辐射吸收层中的每一个在空间上位于一个驻波的一个波腹的位置,使得辐射吸收增强。 辐射吸收层可以是体层,也可以是量子阱包括多个层,每个层由InGaAs的应变层组成。 各个InGaAs层通过GaAs阻挡层彼此间隔开。