专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US6013553A Zirconium and/or hafnium oxynitride gate dielectric 失效
标题翻译：锆和/或铪氧氮化物栅极电介质
公开(公告)号：US6013553A
公开(公告)日：2000-01-11
申请号：US115773
申请日：1998-07-15
申请人： Robert M. Wallace , Richard A. Stoltz , Glen D. Wilk
发明人： Robert M. Wallace , Richard A. Stoltz , Glen D. Wilk
IPC分类号： H01L21/28 , H01L21/314 , H01L21/316 , H01L29/51 , H01L21/283 , H01L21/31 , H01L21/441 , H01L21/469
CPC分类号： H01L21/31691 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28229 , H01L29/513 , H01L29/517 , H01L29/518 , H01L21/3143 , H01L21/31612 , H01L21/31641 , H01L21/31645
摘要： A field effect semiconductor device comprising a high permittivity zirconium (or hafnium) oxynitride gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate 20 having a semiconducting channel region 24 formed therein. A zirconium oxynitride gate dielectric layer 36 is formed over this substrate, followed by a conductive gate 38. Zirconium oxynitride gate dielectric layer 36 has a dielectric constant is significantly higher than the dielectric constant of silicon dioxide.
摘要翻译：本文公开了包括高介电常数锆（或铪）氧氮化物栅极电介质的场效应半导体器件及其形成方法。该器件包括其中形成有半导体沟道区24的硅衬底20。在该衬底上形成氧氮化锆栅极电介质层36，然后形成导电栅极38.氧氮化硅栅极电介质层36的介电常数明显高于二氧化硅的介电常数。

2. 发明授权

US06291867B1 Zirconium and/or hafnium silicon-oxynitride gate dielectric 有权
标题翻译：锆和/或铪硅 - 氧氮化物栅极电介质
公开(公告)号：US06291867B1
公开(公告)日：2001-09-18
申请号：US09434205
申请日：1999-11-04
申请人： Robert M. Wallace , Richard A. Stoltz , Glen D. Wilk
发明人： Robert M. Wallace , Richard A. Stoltz , Glen D. Wilk
IPC分类号： H01L2976
CPC分类号： H01L21/31691 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28229 , H01L21/3143 , H01L21/31612 , H01L21/31641 , H01L21/31645 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A field effect semiconductor device comprising a high permittivity zirconium (or hafnium) silicon-oxynitride gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate 20 having a semiconducting channel region 24 formed therein. A zirconium silicon-oxynitride gate dielectric layer 36 is formed over this substrate, followed by a conductive gate 38. Zirconium silicon-oxynitride gate dielectric layer 36 has a dielectric constant is significantly higher than the dielectric constant of silicon dioxide. However, the zirconium silicon-oxynitride gate dielectric may also be designed to have the advantages of silicon dioxide, e.g. high breakdown, low interface state density, and high stability.
摘要翻译：本文公开了包括高介电常数锆（或铪）硅 - 氧氮化物栅极电介质的场效应半导体器件及其形成方法。该器件包括其中形成有半导体沟道区24的硅衬底20。在该衬底上形成锆硅氧烷栅极电介质层36，然后形成导电栅极38.具有介电常数的氧化硅 - 氧氮化硅栅极电介质层36显着高于二氧化硅的介电常数。然而，锆硅氧烷栅极电介质也可以被设计为具有二氧化硅的优点，例如，高击穿，低界面状态密度和高稳定性。

3. 发明授权

US06291866B1 Zirconium and/or hafnium oxynitride gate dielectric 有权
标题翻译：锆和/或铪氧氮化物栅极电介质
公开(公告)号：US06291866B1
公开(公告)日：2001-09-18
申请号：US09421837
申请日：1999-10-20
申请人： Robert M. Wallace , Richard A. Stoltz , Glen D. Wilk
发明人： Robert M. Wallace , Richard A. Stoltz , Glen D. Wilk
IPC分类号： H01L2976
CPC分类号： H01L21/31691 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28229 , H01L21/3143 , H01L21/31612 , H01L21/31641 , H01L21/31645 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A field effect semiconductor device comprising a high permittivity zirconium (or hafnium) oxynitride gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate 20 having a semiconducting channel region 24 formed therein. A zirconium oxynitride gate dielectric layer 36 is formed over this substrate, followed by a conductive gate 38. Zirconium oxynitride gate dielectric layer 36 has a dielectric constant is significantly higher than the dielectric constant of silicon dioxide.
摘要翻译：本文公开了包括高介电常数锆（或铪）氧氮化物栅极电介质的场效应半导体器件及其形成方法。该器件包括其中形成有半导体沟道区24的硅衬底20。在该衬底上形成氧氮化锆栅极电介质层36，然后形成导电栅极38.氧氮化硅栅极电介质层36的介电常数明显高于二氧化硅的介电常数。

4. 发明授权

US6020243A Zirconium and/or hafnium silicon-oxynitride gate dielectric 失效
标题翻译：锆和/或铪硅 - 氧氮化物栅极电介质
公开(公告)号：US6020243A
公开(公告)日：2000-02-01
申请号：US115859
申请日：1998-07-15
申请人： Robert M. Wallace , Richard A. Stoltz , Glen D. Wilk
发明人： Robert M. Wallace , Richard A. Stoltz , Glen D. Wilk
IPC分类号： H01L21/28 , H01L21/314 , H01L21/316 , H01L29/51 , H01L21/283 , H01L21/31 , H01L21/441 , H01L21/469
CPC分类号： H01L21/31691 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28229 , H01L29/513 , H01L29/517 , H01L29/518 , H01L21/3143 , H01L21/31612 , H01L21/31641 , H01L21/31645
摘要： A field effect semiconductor device comprising a high permittivity zirconium (or hafnium) silicon-oxynitride gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate 20 having a semiconducting channel region 24 formed therein. A zirconium silicon-oxynitride gate dielectric layer 36 is formed over this substrate, followed by a conductive gate 38. Zirconium silicon-oxynitride gate dielectric layer 36 has a dielectric constant is significantly higher than the dielectric constant of silicon dioxide. However, the zirconium silicon-oxynitride gate dielectric may also be designed to have the advantages of silicon dioxide, e.g. high breakdown, low interface state density, and high stability.
摘要翻译：本文公开了包括高介电常数锆（或铪）硅 - 氧氮化物栅极电介质的场效应半导体器件及其形成方法。该器件包括其中形成有半导体沟道区24的硅衬底20。在该衬底上形成锆硅氧烷栅极电介质层36，然后形成导电栅极38.具有介电常数的氧化硅 - 氧氮化硅栅极电介质层36显着高于二氧化硅的介电常数。然而，锆硅氧烷栅极电介质也可以被设计为具有二氧化硅的优点，例如，高击穿，低界面状态密度和高稳定性。

5. 发明授权

US5807607A Polyol-based method for forming thin film aerogels on semiconductor substrates 失效
标题翻译：用于在半导体衬底上形成薄膜气凝胶的基于多元醇的方法
公开(公告)号：US5807607A
公开(公告)日：1998-09-15
申请号：US748926
申请日：1996-11-14
申请人： Douglas M. Smith , William C. Ackerman , Richard A. Stoltz
发明人： Douglas M. Smith , William C. Ackerman , Richard A. Stoltz
IPC分类号： B05D3/02 , H01L21/31 , H01L21/316 , H01L21/469 , B05D5/12 , H01L21/00
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02343 , H01L21/02359 , H01L21/31695
摘要： This invention has enabled a new, simple nanoporous dielectric fabrication method. In general, this invention uses a polyol, such as glycerol, as a solvent. This new method allows both bulk and thin film aerogels to be made without supercritical drying, freeze drying, or a surface modification step before drying. Prior art aerogels have required at least one of these steps to prevent substantial pore collapse during drying. Thus, this invention allows production of nanoporous dielectrics at room temperature and atmospheric pressure, without a separate surface modification step. Although not required to prevent substantial densification, this new method does not exclude the use of supercritical drying or surface modification steps prior to drying. In general, this new method is compatible with most prior art aerogel techniques. Although this new method allows fabrication of aerogels without substantial pore collapse during drying, there may be some permanent shrinkage during aging and/or drying.
摘要翻译：本发明已经实现了一种新的简单的纳米多孔电介质制造方法。通常，本发明使用多元醇如甘油作为溶剂。这种新方法允许在超临界干燥，冷冻干燥或干燥前的表面改性步骤中制造体积和薄膜气凝胶。现有技术的气凝胶需要这些步骤中的至少一个来防止在干燥期间大量的孔隙破裂。因此，本发明允许在室温和大气压下制备纳米多孔电介质，而无需单独的表面改性步骤。尽管不需要防止实质致密化，但是这种新方法并不排除在干燥之前使用超临界干燥或表面改性步骤。通常，这种新方法与大多数现有技术的气凝胶技术相兼容。虽然这种新方法允许在干燥期间制造气凝胶而没有实质的孔隙塌陷，但在老化和/或干燥期间可能存在一些永久收缩。

6. 发明授权

US5102637A Method of purifying zirconium tetrachloride and hafnium tetrachloride in a vapor stream 失效
标题翻译：在蒸汽流中提纯四氯化锆和四氯化铪的方法
公开(公告)号：US5102637A
公开(公告)日：1992-04-07
申请号：US597254
申请日：1990-10-12
申请人： Thomas S. Snyder , Richard A. Stoltz
发明人： Thomas S. Snyder , Richard A. Stoltz
IPC分类号： C01B33/107 , C01G25/04 , C01G27/04
CPC分类号： C01B33/10721 , C01G25/04 , C01G27/04
摘要： A vapor stream from a sand chlorinator containing principally zirconium tetrachloride, hafnium tetrachloride and silicon tetrachloride contaminated with ferric chloride is purified by cooling the vapor to a temperature of about 335.degree. C. to about 600.degree. C. The cooled vapors flow through a gaseous diffusion separative barrier where a silicon tetrachloride vapor stream contaminated with metal chlorides flows from the separative barrier as a "fast" stream; ferric chloride is adsorbed by the separative barrier; and a vapor stream principally containing zirconium tetrachloride, hafnium tetrachloride and silicon tetrachloride is screened by the separative barrier.
摘要翻译：通过将蒸气冷却至约335℃至约600℃的温度，将主要含有四氯化锆，四氯化铪和四氯化氯的四氯化氯的氯化氯蒸气流提纯至约335℃至约600℃。冷却的蒸汽流过气体扩散分离屏障，其中被金属氯化物污染的四氯化硅蒸汽流作为“快速”流从分离屏障流出; 氯化铁被分离屏障吸附; 并且主要含有四氯化锆，四氯化铪和四氯化硅的蒸汽流由分离屏障筛选。

7. 发明授权

US4923579A Electrochemical process for zirconium alloy recycling 失效
标题翻译：锆合金回收电化学工艺
公开(公告)号：US4923579A
公开(公告)日：1990-05-08
申请号：US242573
申请日：1988-09-12
申请人： Thomas S. Snyder , Richard A. Stoltz , David Zuckerbrod
发明人： Thomas S. Snyder , Richard A. Stoltz , David Zuckerbrod
IPC分类号： C25C3/26 , C25C3/34
CPC分类号： C25C3/26 , C25C3/34
摘要： A major cost component for zirconium alloy manufacture and fabrication is metal scrap generation during fabrication. This scrap, which has already incurred the entire process conversion cost from zircon sand to metal refining, constitutes an expensive cost to the fabrication process. The present invention teaches that these alloy scraps may be separated into their components by molten salt electrolysis using FLINAK electrolyte. The alloy components are recycled directly to the alloying process as cathodic grade metals, saving the cost of completely repeating the zircon conversion process.
摘要翻译：锆合金制造和制造的主要成本部件是制造期间的金属废料产生。这种废料已经引起从锆石砂到金属精炼的整个工艺转化成本，构成了制造工艺的昂贵成本。本发明教导了这些合金废料可以通过使用FLINAK电解质的熔融盐电解分离成它们的组分。合金成分直接回收到合金化工艺中作为阴极级金属，节省了完全重复锆石转化工艺的成本。

8. 发明授权

US4874475A Molten salt extractive distillation process for zirconium-hafnium separation 失效
标题翻译：用于锆 - 铪分离的熔盐萃取蒸馏方法
公开(公告)号：US4874475A
公开(公告)日：1989-10-17
申请号：US242570
申请日：1988-09-12
申请人： David F. McLaughlin , Richard A. Stoltz
发明人： David F. McLaughlin , Richard A. Stoltz
IPC分类号： B01D3/32 , B01D3/40 , C01G25/04 , C01G27/04 , C22B34/14
CPC分类号： B01D3/322 , B01D3/40 , C01G25/04 , C01G27/04 , C22B34/14 , Y10S203/17 , Y10S203/90
摘要： Improvements are described to a process in which the extractive distillation separation of zirconium or hafnium may be accomplished using mixtures of fused alkali metal or alkali metal and alkaline earth chlorides as the solvent. The solvent composition is adjusted to provide a low-melting eutectic, permitting recirculation of the stripped solvent in the liquid phase, as well as reducing the temperature required for thermal stripping (reducing the corrosivity of the fluid). Stripping of the bottoms is accomplished at least partially by direct electrolysis of the bottoms stream, producing the zirconium-free salt recycle stream to be transferred to the top of the column, and at least partially eliminating the need for chemical reduction of the tetrachlorides to metal (a costly process generating undersirable waste streams). Regeneration of the reflux is accomplished in a presurized condenser system, of one or more stages, with all material transport to be done in either the liquid or vapor states.
摘要翻译：将改进描述为可以使用熔融碱金属或碱金属和碱土金属氯化物作为溶剂的混合物来完成锆或铪的萃取蒸馏分离的方法。调节溶剂组成以提供低熔点共晶体，允许汽提溶剂在液相中再循环，以及降低热剥离所需的温度（降低流体的腐蚀性）。至少部分地通过底部物流的直接电解来完成底部物质的汽提，产生无锆盐再循环物流转移到塔顶部，并且至少部分地消除了将四氯化碳化学还原成金属的需要（造成不良废物流的成本高昂的过程）。回流的再生在一个或多个阶段的预先冷凝器系统中实现，所有的物质输送都以液态或蒸汽状态进行。

9. 发明申请

US20210241930A1 CORROSION RESISTANT MATERIAL FOR HEAT EXCHANGERS 有权
公开(公告)号：US20210241930A1
公开(公告)日：2021-08-05
申请号：US17155351
申请日：2021-01-22
申请人： Richard A. Stoltz , Jeff Bullington
发明人： Richard A. Stoltz , Jeff Bullington
IPC分类号： G21C15/16 , G21C3/54
摘要： A heat exchanger comprises a vessel, and a ceramic-nitride material disposed within the vessel and configured to separate a first fluid and a second fluid and/or gaseous fluid, and transfer a heat from the first fluid to the second fluid and/or gaseous fluid. The ceramic-nitride material also reduces corrosion.

10. 发明授权

US06821554B2 Polyol-based method for forming thin film aerogels on semiconductor substrates 有权
标题翻译：用于在半导体衬底上形成薄膜气凝胶的基于多元醇的方法
公开(公告)号：US06821554B2
公开(公告)日：2004-11-23
申请号：US09757073
申请日：2001-01-08
申请人： Douglas M. Smith , William C. Ackerman , Richard A. Stoltz
发明人： Douglas M. Smith , William C. Ackerman , Richard A. Stoltz
IPC分类号： B05D302
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02343 , H01L21/02359 , H01L21/31695
摘要： This invention has enabled a new, simple nanoporous dielectric fabrication method. In general, this invention uses a polyol, such as glycerol, as a solvent. This new method allows both bulk and thin film aerogels to be made without supercritical drying, freeze drying, or a surface modification step before drying. Prior art aerogels have required at least one of these steps to prevent substantial pore collapse during drying. Thus, this invention allows production of nanoporous dielectrics at room temperature and atmospheric pressure, without a separate surface modification step. Although not required to prevent substantial densification, this new method does not exclude the use of supercritical drying or surface modification steps prior to drying. In general, this new method is compatible with most prior art aerogel techniques. Although this new method allows fabrication of aerogels without substantial pore collapse during drying, there may be some permanent shrinkage during aging and/or drying.
摘要翻译：本发明已经实现了一种新的简单的纳米多孔电介质制造方法。通常，本发明使用多元醇如甘油作为溶剂。这种新方法允许在超临界干燥，冷冻干燥或干燥前的表面改性步骤中制造体积和薄膜气凝胶。现有技术的气凝胶需要这些步骤中的至少一个来防止在干燥期间大量的孔隙破裂。因此，本发明允许在室温和大气压下制备纳米多孔电介质，而无需单独的表面改性步骤。尽管不需要防止实质致密化，但是这种新方法并不排除在干燥之前使用超临界干燥或表面改性步骤。通常，这种新方法与大多数现有技术的气凝胶技术相兼容。虽然这种新方法允许在干燥期间制造气凝胶而没有实质的孔隙塌陷，但在老化和/或干燥期间可能存在一些永久收缩。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式