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    • 5. 发明授权
    • Detection apparatus for biological materials and methods of making and using the same
    • 用于生物材料的检测装置及其制造和使用方法
    • US07341692B2
    • 2008-03-11
    • US11119519
    • 2005-04-30
    • Robert L. WillettKirk W. BaldwinLoren N. Pfeiffer
    • Robert L. WillettKirk W. BaldwinLoren N. Pfeiffer
    • G01N27/00G01N33/53G01N33/551G01N33/552G01N33/553
    • G01N33/553G01N33/5438G01N33/551
    • Apparatus comprising a surface site layer having a distal site end, wherein the distal site end includes a substantially inorganic surface having a chemical composition selected from a group consisting of metals, semiconductors, insulators, and mixtures thereof, the surface positioned within a polypeptide bonding region and having a selective bonding affinity for a polypeptide; a plurality of interlayers between which the surface site layer is interposed, wherein the distal site end is distanced from the interlayers, first and second supports, wherein the surface site layer and the interlayers are interposed between the first and second supports; and first and second conductors provided on the first and second supports and having respective first and second distal conductor ends positioned within the polypeptide bonding region; wherein the conductors are capable of applying an external voltage potential across the polypeptide bonding region.
    • 包括具有远端部位端的表面部位层的装置,其中所述远端部位端包括具有选自金属,半导体,绝缘体及其混合物的化学组成的基本无机表面,所述表面位于多肽结合区域内 并且对多肽具有选择性结合亲和力; 多个中间层,其间插入有表面位置层,其中所述远端位置端与所述夹层间隔开,所述第一和第二支撑件,其中所述表面位置层和所述夹层介于所述第一和第二支撑件之间; 以及第一和第二导体,其设置在第一和第二支撑件上,并且具有位于多肽接合区域内的相应的第一和第二远端导体末端; 其中导体能够跨越多肽接合区域施加外部电压电位。
    • 6. 发明申请
    • Quantum Well Device With Lateral Electrodes
    • 具有横向电极的量子阱装置
    • US20130140523A1
    • 2013-06-06
    • US13349056
    • 2012-01-12
    • Robert L. Willett
    • Robert L. Willett
    • H01L29/15
    • H01L43/14G06N99/002H01L43/04H01L43/065
    • An apparatus includes a substrate, a sequence of crystalline semiconductor layers on a planar surface of the substrate, and first and second sets of electrodes over the sequence. The sequence has a 2D quantum well therein. The first set of electrodes border opposite sides of a lateral region of the sequence and are controllable to vary a width of a non-depleted portion of the quantum well along the top surface. The second set of electrodes border channels between the lateral region and first and second adjacent lateral areas of the sequence and are controllable to vary widths of non-depleted segments of the quantum well in the channels. The electrodes are such that straight lines connecting the lateral areas via the channels either pass between one of the electrodes and the substrate or are misaligned to an effective [1 10] lattice direction of the sequence.
    • 一种设备包括衬底,在衬底的平面表面上的一系列晶体半导体层,以及该序列上的第一组和第二组电极。 该序列在其中具有2D量子阱。 第一组电极与序列的横向区域的相对侧边界,并且可控制以沿着顶表面改变量子阱的非耗尽部分的宽度。 第二组电极在横向区域和序列的第一和第二相邻横向区域之间边界通道,并且可控制以改变通道中量子阱的非耗尽区段的宽度。 这些电极使得经由通道连接横向区域的直线可以通过电极之间的一个电极和衬底,或者不对准序列的有效[110]晶格方向。
    • 10. 发明授权
    • Quantum well device with lateral electrodes
    • 量子阱器件与侧面电极
    • US08987703B2
    • 2015-03-24
    • US13349056
    • 2012-01-12
    • Robert L. Willett
    • Robert L. Willett
    • H01L43/06H01L43/14
    • H01L43/14G06N99/002H01L43/04H01L43/065
    • An apparatus includes a substrate, a sequence of crystalline semiconductor layers on a planar surface of the substrate, and first and second sets of electrodes over the sequence. The sequence has a 2D quantum well therein. The first set of electrodes border opposite sides of a lateral region of the sequence and are controllable to vary a width of a non-depleted portion of the quantum well along the top surface. The second set of electrodes border channels between the lateral region and first and second adjacent lateral areas of the sequence and are controllable to vary widths of non-depleted segments of the quantum well in the channels. The electrodes are such that straight lines connecting the lateral areas via the channels either pass between one of the electrodes and the substrate or are misaligned to an effective [1 1 0] lattice direction of the sequence.
    • 一种设备包括衬底,在衬底的平面表面上的一系列晶体半导体层,以及该序列上的第一组和第二组电极。 该序列在其中具有2D量子阱。 第一组电极与序列的横向区域的相对侧边界,并且可控制以沿着顶表面改变量子阱的非耗尽部分的宽度。 第二组电极在横向区域和序列的第一和第二相邻横向区域之间边界通道,并且可控制以改变通道中量子阱的非耗尽区段的宽度。 这些电极使得经由通道连接横向区域的直线可以在一个电极和衬底之间通过,或者不对准序列的有效[110]晶格方向。