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1. 发明授权

US07960714B2 Interfering excitations in FQHE fluids 有权
公开(公告)号：US07960714B2
公开(公告)日：2011-06-14
申请号：US12317436
申请日：2008-12-23
申请人： Kirk William Baldwin , Loren N. Pfeiffer , Kenneth William West , Robert L Willett
发明人： Kirk William Baldwin , Loren N. Pfeiffer , Kenneth William West , Robert L Willett
IPC分类号： H01L43/06 , H01L43/14
CPC分类号： H01L43/065 , G06N99/002
摘要： An apparatus includes a substrate with a planar surface, a multilayer of semiconductor layers located on the planar surface, a plurality of electrodes located over the multilayer, and a dielectric layer located between the electrodes and the multilayer. The multilayer includes a 2D quantum well. A first set of the electrodes is located to substantially surround a lateral area of the 2D quantum well. A second set of the electrodes is controllable to vary a lateral width of a non-depleted channel between the substantially surrounded lateral area of the 2D quantum well and another area of the 2D quantum well. A third set of the electrodes is controllable to vary an area of a non-depleted portion of the lateral area.

2. 发明申请

US20110212553A1 Interfering excitations in FQHE fluids 有权
标题翻译：在FQHE液体中干扰激发
公开(公告)号：US20110212553A1
公开(公告)日：2011-09-01
申请号：US13068307
申请日：2011-05-06
申请人： Kirk William Baldwin , Loren N. Pfeiffer , Kenneth William West , Robert L. Willett
发明人： Kirk William Baldwin , Loren N. Pfeiffer , Kenneth William West , Robert L. Willett
IPC分类号： H01L43/06
CPC分类号： H01L43/065 , G06N99/002
摘要： An apparatus includes a substrate with a planar surface, a multilayer of semiconductor layers located on the planar surface, a plurality of electrodes located over the multilayer, and a dielectric layer located between the electrodes and the multilayer. The multilayer includes a 2D quantum well. A first set of the electrodes is located to substantially surround a lateral area of the 2D quantum well. A second set of the electrodes is controllable to vary a lateral width of a non-depleted channel between the substantially surrounded lateral area of the 2D quantum well and another area of the 2D quantum well. A third set of the electrodes is controllable to vary an area of a non-depleted portion of the lateral area.
摘要翻译：一种装置包括具有平坦表面的基底，位于平坦表面上的多层半导体层，位于多层上方的多个电极以及位于电极和多层之间的电介质层。多层包括2D量子阱。第一组电极被定位成基本上围绕2D量子阱的横向区域。第二组电极是可控制的，以改变2D量子阱的基本上包围的横向区域和2D量子阱的另一区域之间的非耗尽通道的横向宽度。第三组电极是可控的以改变横向区域的非耗尽部分的面积。

3. 发明申请

US20100155697A1 Interfering excitations in FQHE fluids 有权
标题翻译：在FQHE液体中干扰激发
公开(公告)号：US20100155697A1
公开(公告)日：2010-06-24
申请号：US12317436
申请日：2008-12-23
申请人： Kirk William Baldwin , Loren N. Pfeiffer , Kenneth William West , Robert L. Willett
发明人： Kirk William Baldwin , Loren N. Pfeiffer , Kenneth William West , Robert L. Willett
IPC分类号： H01L43/06
CPC分类号： H01L43/065 , G06N99/002
摘要： An apparatus includes a substrate with a planar surface, a multilayer of semiconductor layers located on the planar surface, a plurality of electrodes located over the multilayer, and a dielectric layer located between the electrodes and the multilayer. The multilayer includes a 2D quantum well. A first set of the electrodes is located to substantially surround a lateral area of the 2D quantum well. A second set of the electrodes is controllable to vary a lateral width of a non-depleted channel between the substantially surrounded lateral area of the 2D quantum well and another area of the 2D quantum well. A third set of the electrodes is controllable to vary an area of a non-depleted portion of the lateral area.
摘要翻译：一种装置包括具有平坦表面的基底，位于平坦表面上的多层半导体层，位于多层上方的多个电极以及位于电极和多层之间的电介质层。多层包括2D量子阱。第一组电极被定位成基本上围绕2D量子阱的横向区域。第二组电极是可控制的，以改变2D量子阱的基本上包围的横向区域和2D量子阱的另一区域之间的非耗尽通道的横向宽度。第三组电极是可控的以改变横向区域的非耗尽部分的面积。

4. 发明授权

US08324120B2 Interfering excitations in FQHE fluids 有权
标题翻译：在FQHE液体中干扰激发
公开(公告)号：US08324120B2
公开(公告)日：2012-12-04
申请号：US13068307
申请日：2011-05-06
申请人： Kirk William Baldwin , Loren N. Pfeiffer , Kenneth William West , Robert L Willett
发明人： Kirk William Baldwin , Loren N. Pfeiffer , Kenneth William West , Robert L Willett
IPC分类号： H01L21/18 , H01L43/06 , H01L43/12
CPC分类号： H01L43/065 , G06N99/002
摘要： An apparatus includes a substrate with a planar surface, a multilayer of semiconductor layers located on the planar surface, a plurality of electrodes located over the multilayer, and a dielectric layer located between the electrodes and the multilayer. The multilayer includes a 2D quantum well. A first set of the electrodes is located to substantially surround a lateral area of the 2D quantum well. A second set of the electrodes is controllable to vary a lateral width of a non-depleted channel between the substantially surrounded lateral area of the 2D quantum well and another area of the 2D quantum well. A third set of the electrodes is controllable to vary an area of a non-depleted portion of the lateral area.
摘要翻译：一种装置包括具有平坦表面的基底，位于平坦表面上的多层半导体层，位于多层上方的多个电极以及位于电极和多层之间的电介质层。多层包括2D量子阱。第一组电极被定位成基本上围绕2D量子阱的横向区域。第二组电极是可控制的，以改变2D量子阱的基本上包围的横向区域和2D量子阱的另一区域之间的非耗尽通道的横向宽度。第三组电极是可控的以改变横向区域的非耗尽部分的面积。

5. 发明申请

US20100308302A1 Quantum Well Device 有权
标题翻译：量子阱器件
公开(公告)号：US20100308302A1
公开(公告)日：2010-12-09
申请号：US12789987
申请日：2010-05-28
申请人： Kirk William Baldwin , Loren N. Pfeiffer , Kenneth William West
发明人： Kirk William Baldwin , Loren N. Pfeiffer , Kenneth William West
IPC分类号： H01L29/20 , H01L21/20 , H01L21/02
CPC分类号： H01L21/02104 , B82Y40/00 , H01L21/02 , H01L43/065
摘要： An apparatus includes a primary planar quantum well and a planar distribution of dopant atoms. The primary planar quantum well is formed by a lower barrier layer, a central well layer on the lower barrier layer, and an upper barrier layer on the central well layer. Each of the layers is a semiconductor layer. One of the barrier layers has a secondary planar quantum well and is located between the planar distribution of dopant atoms and the central well layer. The primary planar quantum well may be undoped or substantially undoped, e.g., intrinsic semiconductor.
摘要翻译：一种装置包括初级平面量子阱和掺杂剂原子的平面分布。主平面量子阱由下阻挡层，下阻挡层上的中心阱层和中心阱层上的上阻挡层形成。每个层是半导体层。阻挡层中的一个具有二次平面量子阱，并且位于掺杂剂原子的平面分布和中心阱层之间。主平面量子阱可以是未掺杂的或基本上未掺杂的，例如本征半导体。

6. 发明授权

US08362461B2 Quantum well device 有权
标题翻译：量子阱器件
公开(公告)号：US08362461B2
公开(公告)日：2013-01-29
申请号：US12789987
申请日：2010-05-28
申请人： Kirk William Baldwin , Loren N. Pfeiffer , Kenneth William West
发明人： Kirk William Baldwin , Loren N. Pfeiffer , Kenneth William West
IPC分类号： H01L33/00 , H01L29/15
CPC分类号： H01L21/02104 , B82Y40/00 , H01L21/02 , H01L43/065
摘要： An apparatus includes a primary planar quantum well and a planar distribution of dopant atoms. The primary planar quantum well is formed by a lower barrier layer, a central well layer on the lower barrier layer, and an upper barrier layer on the central well layer. Each of the layers is a semiconductor layer. One of the barrier layers has a secondary planar quantum well and is located between the planar distribution of dopant atoms and the central well layer. The primary planar quantum well may be undoped or substantially undoped, e.g., intrinsic semiconductor.
摘要翻译：一种装置包括初级平面量子阱和掺杂剂原子的平面分布。主平面量子阱由下阻挡层，下阻挡层上的中心阱层和中心阱层上的上阻挡层形成。每个层是半导体层。阻挡层中的一个具有二次平面量子阱，并且位于掺杂剂原子的平面分布和中心阱层之间。主平面量子阱可以是未掺杂的或基本上未掺杂的，例如本征半导体。

7. 发明申请

US20130130474A1 Quantum Well Device 有权
标题翻译：量子阱器件
公开(公告)号：US20130130474A1
公开(公告)日：2013-05-23
申请号：US13712179
申请日：2012-12-12
申请人： Kirk William Baldwin , Loren N. Pfeiffer , Kenneth William West
发明人： Kirk William Baldwin , Loren N. Pfeiffer , Kenneth William West
IPC分类号： H01L21/02
CPC分类号： H01L21/02104 , B82Y40/00 , H01L21/02 , H01L43/065
摘要： An apparatus includes a primary planar quantum well and a planar distribution of dopant atoms. The primary planar quantum well is formed by a lower barrier layer, a central well layer on the lower barrier layer, and an upper barrier layer on the central well layer. Each of the layers is a semiconductor layer. One of the barrier layers has a secondary planar quantum well and is located between the planar distribution of dopant atoms and the central well layer, The primary planar quantum well may be undoped or substantially undoped, e.g., intrinsic semiconductor.
摘要翻译：一种装置包括初级平面量子阱和掺杂剂原子的平面分布。主平面量子阱由下阻挡层，下阻挡层上的中心阱层和中心阱层上的上阻挡层形成。每个层是半导体层。阻挡层中的一个具有次平面量子阱并且位于掺杂剂原子的平面分布和中心阱层之间。初级平面量子阱可以是未掺杂的或基本上未掺杂的，例如本征半导体。

8. 发明授权

US08633092B2 Quantum well device 有权
标题翻译：量子阱器件
公开(公告)号：US08633092B2
公开(公告)日：2014-01-21
申请号：US13712179
申请日：2012-12-12
申请人： Kirk William Baldwin , Loren N. Pfeiffer , Kenneth William West
发明人： Kirk William Baldwin , Loren N. Pfeiffer , Kenneth William West
IPC分类号： H01L21/20 , H01L29/15 , H01L33/00
CPC分类号： H01L21/02104 , B82Y40/00 , H01L21/02 , H01L43/065
摘要： An apparatus includes a primary planar quantum well and a planar distribution of dopant atoms. The primary planar quantum well is formed by a lower barrier layer, a central well layer on the lower barrier layer, and an upper barrier layer on the central well layer. Each of the layers is a semiconductor layer. One of the barrier layers has a secondary planar quantum well and is located between the planar distribution of dopant atoms and the central well layer. The primary planar quantum well may be undoped or substantially undoped, e.g., intrinsic semiconductor.
摘要翻译：一种装置包括初级平面量子阱和掺杂剂原子的平面分布。主平面量子阱由下阻挡层，下阻挡层上的中心阱层和中心阱层上的上阻挡层形成。每个层是半导体层。阻挡层中的一个具有二次平面量子阱，并且位于掺杂剂原子的平面分布和中心阱层之间。主平面量子阱可以是未掺杂的或基本上未掺杂的，例如本征半导体。

9. 发明授权

US07402779B2 Effusion cell and method for use in molecular beam deposition 有权
标题翻译：用于分子束沉积的流出池和方法
公开(公告)号：US07402779B2
公开(公告)日：2008-07-22
申请号：US10890046
申请日：2004-07-13
申请人： Loren N. Pfeiffer , Kenneth William West
发明人： Loren N. Pfeiffer , Kenneth William West
IPC分类号： H05B3/04 , F27B14/14 , C23C16/00 , C23C14/00
CPC分类号： C23C14/243 , C23C14/26 , C30B23/066 , C30B35/00
摘要： An MBE effusion cell is configured to produce an inverted temperature gradient; that is, the top surface of the melt is not cooler than the bottom surface of the melt. In one embodiment, the MBE effusion cell comprises a crucible having tip, central and base regions. First filaments are located laterally adjacent the tip region; second filaments are located laterally adjacent the central region; and third filaments are located laterally adjacent all three of the regions. The radial density of the number of the heater filaments is lower adjacent the base region than adjacent the tip or central regions. In another embodiment, further tailoring of the inverted temperature gradient is obtained by reducing the amount of insulation at the base of the crucible. In another embodiment, at least one heater filament extends substantially along the longitudinal axis of the crucible and is located adjacent its lateral wall. Dielectric annular spacers are located around the lateral wall and are distributed along the longitudinal axis. The spacers having a multiplicity of holes through which the filaments pass. The filaments and spacers are located within a gas-blocking enclosure.
摘要翻译： MBE积液单元被配置为产生反向温度梯度; 也就是说，熔体的顶部表面不比熔体的底部表面更冷。在一个实施例中，MBE渗出池包括具有尖端，中心和底部区域的坩埚。第一丝沿侧向邻近尖端区域定位; 第二丝沿横向邻近中心区定位; 并且第三细丝位于横向邻近所有三个区域。加热器丝的数量的径向密度相邻于基部区域比邻近尖端或中心区域低。在另一个实施例中，通过减少在坩埚底部的绝缘量来获得反向温度梯度的进一步裁剪。在另一个实施例中，至少一个加热丝基本上沿着坩埚的纵向轴线延伸并且位于其侧壁附近。电介质环形间隔物位于侧壁周围并沿着纵向轴线分布。间隔物具有许多细丝通过的孔。细丝和间隔物位于阻气罩内。

10. 发明授权

US06921726B2 Growing smooth semiconductor layers 失效
标题翻译：生长平滑的半导体层
公开(公告)号：US06921726B2
公开(公告)日：2005-07-26
申请号：US10097092
申请日：2002-03-13
申请人： Hidefumi Akiyama , Loren Neil Pfeiffer , Kenneth William West
发明人： Hidefumi Akiyama , Loren Neil Pfeiffer , Kenneth William West
IPC分类号： C30B23/02 , H01L21/203 , H01L21/31
CPC分类号： C30B23/02 , C30B29/40 , C30B29/42 , H01L21/02395 , H01L21/02433 , H01L21/02463 , H01L21/02546 , H01L21/02587 , H01L21/02609 , H01L21/02631
摘要： A method includes epitaxially growing a semiconductor layer with a free surface and performing an anneal that reduces atomic roughness on the free surface. The free surface has an orientation with respect to lattice axes of the layer for which atoms in flat regions of the free surface have more chemical bonds to the layer than do, at least, some of the atoms at edges of monolayer steps on the free surface.
摘要翻译：一种方法包括外延生长具有自由表面的半导体层，并执行减少自由表面上的原子粗糙度的退火。自由表面具有相对于层的晶格轴的取向，自由表面的平坦区域中的原子与层相比具有比层更多的化学键，至少在自由表面上的单层边缘的一些原子。

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