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1. 发明授权

US07780347B2 On chip temperature measuring and monitoring circuit and method 有权
标题翻译：片上温度测量和监测电路及方法
公开(公告)号：US07780347B2
公开(公告)日：2010-08-24
申请号：US12177311
申请日：2008-07-22
申请人： Robert L. Franch , Keith A. Jenkins
发明人： Robert L. Franch , Keith A. Jenkins
IPC分类号： G01K7/01 , H01L17/78
CPC分类号： H01L27/0251 , G01K7/01 , G01K7/015
摘要： A device temperature measurement circuit, an integrated circuit (IC) including a device temperature measurement circuit, a method of characterizing device temperature and a method of monitoring temperature. The circuit includes a constant current source and a clamping device. The clamping device selectively shunts current from the constant current source or allows the current to flow through a PN junction, which may be the body to source/drain junction of a field effect transistor (FET). Voltage measurements are taken directly from the PN junction. Junction temperature is determined from measured junction voltage.
摘要翻译：一种器件温度测量电路，包括器件温度测量电路的集成电路（IC），表征器件温度的方法和监测温度的方法。电路包括恒流源和夹紧装置。钳位装置选择性地从恒流源分流电流，或允许电流流过PN结，其可以是场效应晶体管（FET）的主体到源极/漏极结。电压测量直接来自PN结。结温从测量的结电压确定。

2. 发明授权

US07452128B2 On chip temperature measuring and monitoring circuit and method 有权
标题翻译：片上温度测量和监测电路及方法
公开(公告)号：US07452128B2
公开(公告)日：2008-11-18
申请号：US11747620
申请日：2007-05-11
申请人： Robert L. Franch , Keith A. Jenkins
发明人： Robert L. Franch , Keith A. Jenkins
IPC分类号： G01K7/01 , H01L17/78
CPC分类号： H01L27/0251 , G01K7/01 , G01K7/015
摘要： A device temperature measurement circuit, an integrated circuit (IC) including a device temperature measurement circuit, a method of characterizing device temperature and a method of monitoring temperature. The circuit includes a constant current source and a clamping device. The clamping device selectively shunts current from the constant current source or allows the current to flow through a PN junction, which may be the body to source/drain junction of a field effect transistor (FET). Voltage measurements are taken directly from the PN junction. Junction temperature is determined from measured junction voltage.
摘要翻译：一种器件温度测量电路，包括器件温度测量电路的集成电路（IC），表征器件温度的方法和监测温度的方法。电路包括恒流源和夹紧装置。钳位装置选择性地从恒流源分流电流，或允许电流流过PN结，其可以是场效应晶体管（FET）的主体到源极/漏极结。电压测量直接来自PN结。结温从测量的结电压确定。

3. 发明授权

US07762721B2 On chip temperature measuring and monitoring method 失效
标题翻译：片上温度测量和监测方法
公开(公告)号：US07762721B2
公开(公告)日：2010-07-27
申请号：US12061692
申请日：2008-04-03
申请人： Robert L. Franch , Keith A. Jenkins
发明人： Robert L. Franch , Keith A. Jenkins
IPC分类号： G01K7/00
CPC分类号： H01L27/0251 , G01K7/01 , G01K7/015
摘要： A device temperature measurement circuit, an integrated circuit (IC) including a device temperature measurement circuit, a method of characterizing device temperature and a method of monitoring temperature. The circuit includes a constant current source and a clamping device. The clamping device selectively shunts current from the constant current source or allows the current to flow through a PN junction, which may be the body to source/drain junction of a field effect transistor (FET). Voltage measurements are taken directly from the PN junction. Junction temperature is determined from measured junction voltage.
摘要翻译：一种器件温度测量电路，包括器件温度测量电路的集成电路（IC），表征器件温度的方法和监测温度的方法。电路包括恒流源和夹紧装置。钳位装置选择性地从恒流源分流电流，或允许电流流过PN结，其可以是场效应晶体管（FET）的主体到源极/漏极结。电压测量直接来自PN结。结温从测量的结电压确定。

4. 发明申请

US20080291970A1 ON CHIP TEMPERATURE MEASURING AND MONITORING CIRCUIT AND METHOD 有权
标题翻译：在芯片温度测量和监测电路和方法
公开(公告)号：US20080291970A1
公开(公告)日：2008-11-27
申请号：US12177311
申请日：2008-07-22
申请人： Robert L. Franch , Keith A. Jenkins
发明人： Robert L. Franch , Keith A. Jenkins
IPC分类号： G01K7/01
CPC分类号： H01L27/0251 , G01K7/01 , G01K7/015
摘要： A device temperature measurement circuit, an integrated circuit (IC) including a device temperature measurement circuit, a method of characterizing device temperature and a method of monitoring temperature. The circuit includes a constant current source and a clamping device. The clamping device selectively shunts current from the constant current source or allows the current to flow through a PN junction, which may be the body to source/drain junction of a field effect transistor (FET). Voltage measurements are taken directly from the PN junction. Junction temperature is determined from measured junction voltage.
摘要翻译：一种器件温度测量电路，包括器件温度测量电路的集成电路（IC），表征器件温度的方法和监测温度的方法。电路包括恒流源和夹紧装置。钳位装置选择性地从恒流源分流电流，或允许电流流过PN结，其可以是场效应晶体管（FET）的主体到源极/漏极结。电压测量直接来自PN结。结温从测量的结电压确定。

5. 发明申请

US20080187024A1 ON CHIP TEMPERATURE MEASURING AND MONITORING METHOD 失效
标题翻译：在芯片温度测量和监测方法
公开(公告)号：US20080187024A1
公开(公告)日：2008-08-07
申请号：US12061696
申请日：2008-04-03
申请人： Robert L. Franch , Keith A. Jenkins
发明人： Robert L. Franch , Keith A. Jenkins
IPC分类号： G01K7/01
CPC分类号： H01L27/0251 , G01K7/01 , G01K7/015
摘要： A device temperature measurement circuit, an integrated circuit (IC) including a device temperature measurement circuit, a method of characterizing device temperature and a method of monitoring temperature. The circuit includes a constant current source and a clamping device. The clamping device selectively shunts current from the constant current source or allows the current to flow through a PN junction, which may be the body to source/drain junction of a field effect transistor (FET). Voltage measurements are taken directly from the PN junction. Junction temperature is determined from measured junction voltage.
摘要翻译：一种器件温度测量电路，包括器件温度测量电路的集成电路（IC），表征器件温度的方法和监测温度的方法。电路包括恒流源和夹紧装置。钳位装置选择性地从恒流源分流电流，或允许电流流过PN结，其可以是场效应晶体管（FET）的主体到源极/漏极结。电压测量直接来自PN结。结温从测量的结电压确定。

6. 发明授权

US07645071B2 On chip temperature measuring and monitoring method 失效
公开(公告)号：US07645071B2
公开(公告)日：2010-01-12
申请号：US12061696
申请日：2008-04-03
申请人： Robert L. Franch , Keith A. Jenkins
发明人： Robert L. Franch , Keith A. Jenkins
IPC分类号： G01K7/00
CPC分类号： H01L27/0251 , G01K7/01 , G01K7/015
摘要： A device temperature measurement circuit, an integrated circuit (IC) including a device temperature measurement circuit, a method of characterizing device temperature and a method of monitoring temperature. The circuit includes a constant current source and a clamping device. The clamping device selectively shunts current from the constant current source or allows the current to flow through a PN junction, which may be the body to source/drain junction of a field effect transistor (FET). Voltage measurements are taken directly from the PN junction. Junction temperature is determined from measured junction voltage.

7. 发明申请

US20080186035A1 ON CHIP TEMPERATURE MEASURING AND MONITORING METHOD 失效
公开(公告)号：US20080186035A1
公开(公告)日：2008-08-07
申请号：US12061692
申请日：2008-04-03
申请人： Robert L. Franch , Keith A. Jenkins
发明人： Robert L. Franch , Keith A. Jenkins
IPC分类号： G01R27/00
CPC分类号： H01L27/0251 , G01K7/01 , G01K7/015
摘要： A device temperature measurement circuit, an integrated circuit (IC) including a device temperature measurement circuit, a method of characterizing device temperature and a method of monitoring temperature. The circuit includes a constant current source and a clamping device. The clamping device selectively shunts current from the constant current source or allows the current to flow through a PN junction, which may be the body to source/drain junction of a field effect transistor (FET). Voltage measurements are taken directly from the PN junction. Junction temperature is determined from measured junction voltage.

8. 发明授权

US07255476B2 On chip temperature measuring and monitoring circuit and method 失效
标题翻译：片上温度测量和监测电路及方法
公开(公告)号：US07255476B2
公开(公告)日：2007-08-14
申请号：US10824297
申请日：2004-04-14
申请人： Robert L. Franch , Keith A. Jenkins
发明人： Robert L. Franch , Keith A. Jenkins
IPC分类号： G01K7/01 , H01L17/78
CPC分类号： H01L27/0251 , G01K7/01 , G01K7/015
摘要： A device temperature measurement circuit, an integrated circuit (IC) including a device temperature measurement circuit, a method of characterizing device temperature and a method of monitoring temperature. The circuit includes a constant current source and a clamping device. The clamping device selectively shunts current from the constant current source or allows the current to flow through a PN junction, which may be the body to source/drain junction of a field effect transistor (FET). Voltage measurements are taken directly from the PN junction. Junction temperature is determined from measured junction voltage.
摘要翻译：一种器件温度测量电路，包括器件温度测量电路的集成电路（IC），表征器件温度的方法和监测温度的方法。电路包括恒流源和夹紧装置。钳位装置选择性地从恒流源分流电流，或允许电流流过PN结，其可以是场效应晶体管（FET）的主体到源极/漏极结。电压测量直接来自PN结。结温从测量的结电压确定。

9. 发明申请

US20150303871A1 HIGH FREQUENCY OSCILLATOR CIRCUIT 有权
标题翻译：高频振荡器电路
公开(公告)号：US20150303871A1
公开(公告)日：2015-10-22
申请号：US13569815
申请日：2012-08-08
申请人： Keith A. Jenkins , Yu-ming Lin
发明人： Keith A. Jenkins , Yu-ming Lin
IPC分类号： H03B5/12 , H01L29/16 , H01L29/786
CPC分类号： H03B5/1228 , H01L29/1606 , H01L29/78684 , H03B5/1203 , H03B7/06 , H03B2200/0084
摘要： An oscillator circuit includes a field effect transistor and a resonant circuit having a first terminal connected to the field effect transistor. The resonant circuit includes an inductance and a capacitance and has a second terminal for connecting to a radiator. The field effect transistor includes a gate electrode coupled to a source of gate voltage, a source electrode, a drain electrode and a graphene channel disposed between the source electrode and the drain electrode and electrically connected thereto. The graphene channel is disposed relative to the gate electrode for being biased by the gate electrode into a negative differential resistance region of operation. The oscillator circuit is capable of generating a continuous wave THz frequency signal, and is further capable of being enabled and disabled by the bias applied to the gate electrode.
摘要翻译：振荡器电路包括场效应晶体管和具有连接到场效应晶体管的第一端子的谐振电路。谐振电路包括电感和电容，并且具有用于连接到散热器的第二端子。场效应晶体管包括耦合到栅极电压源的栅电极，源电极，漏电极和设置在源电极和漏电极之间并与其电连接的石墨烯通道。石墨烯通道相对于栅电极设置，以便被栅电极偏压成负的差分电阻区域。振荡器电路能够产生连续波THz频率信号，并且还能够通过施加到栅电极的偏置使能和禁止。

10. 发明授权

US08829922B2 On-chip measurement of AC variability in individual transistor devices 有权
标题翻译：单个晶体管器件的交流变率的片上测量
公开(公告)号：US08829922B2
公开(公告)日：2014-09-09
申请号：US13029214
申请日：2011-02-17
申请人： Karthik Balakrishnan , Keith A. Jenkins
发明人： Karthik Balakrishnan , Keith A. Jenkins
IPC分类号： G01R27/28 , G01R31/28 , G01R31/26
CPC分类号： G01R31/2621 , G01R31/2882
摘要： An apparatus for determining alternating current (AC) delay variation of a transistor device under test includes a ring oscillator, the ring oscillator having the transistor device under test configured within a feedback path of the ring oscillator; and circuitry configured to measure a difference between a first signal delay path and a second signal delay path, the first signal delay path being between a gate terminal and a drain terminal of the transistor device under test, and the second signal delay path being between a source terminal and the drain terminal of the transistor device under test.
摘要翻译：一种用于确定被测晶体管器件的交流（AC）延迟变化的装置包括环形振荡器，环形振荡器具有被配置在环形振荡器的反馈路径内的被测晶体管器件; 以及被配置为测量第一信号延迟路径和第二信号延迟路径之间的差的电路，所述第一信号延迟路径位于被测晶体管器件的栅极端子和漏极端子之间，并且所述第二信号延迟路径位于源极端子和被测晶体管器件的漏极端子。

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