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1. 发明授权

US06866792B2 Compositions for chemical mechanical planarization of copper 失效
标题翻译：铜化学机械平面化的组成
公开(公告)号：US06866792B2
公开(公告)日：2005-03-15
申请号：US10017934
申请日：2001-12-12
申请人： Robert J. Small , Maria Peterson , Tuan Truong , Melvin Keith Carter , Lily Yao
发明人： Robert J. Small , Maria Peterson , Tuan Truong , Melvin Keith Carter , Lily Yao
IPC分类号： C09G1/02 , C09K3/14 , C09K13/00 , C09K13/06
CPC分类号： C09K3/1463 , C09G1/02
摘要： The present invention relates chemical mechanical planarization (“CMP”) of copper surfaces and describes copper CMP slurries including an oxidizer, one or more hydroxylamine compounds and at least one abrasive. The hydroxylamine compositions can include hydroxylamine nitrate, hydroxylamine, hydroxylamine sulfate, hydroxyl ammonium salts and mixtures thereof. The oxidizers may further include citric acid as a complexing agent for copper. Sulfuric acid and/or nitric acid provide means for modifying the pH of the oxidizer so that the hydroxylamine chemistries are acidic. Some embodiments include corrosion inhibitors such as benzotriazole, 2,4-pentadione dioxime and/or 1,6-dioxaspiro[4,4] nonane 2,7-dione. Some embodiments also include a free radical inhibitor, advantageously hydrazine. Colloidal silica and milled alumina are used as typical abrasive components.
摘要翻译：本发明涉及铜表面的化学机械平面化（“CMP”），并且描述了包括氧化剂，一种或多种羟胺化合物和至少一种研磨剂的铜CMP浆料。羟胺组合物可以包括硝酸羟胺，羟胺，硫酸羟胺，羟基铵盐及其混合物。氧化剂还可以包括柠檬酸作为铜的络合剂。硫酸和/或硝酸提供了改变氧化剂的pH使得羟胺化学性质为酸性的方法。一些实施方案包括腐蚀抑制剂，例如苯并三唑，2,4-戊二酮二肟和/或1,6-二氧杂螺[4,4]壬烷2,7-二酮。一些实施方案还包括自由基抑制剂，有利的是肼。胶体二氧化硅和碾磨的氧化铝用作典型的磨料组分。

2. 发明授权

US06638326B2 Compositions for chemical mechanical planarization of tantalum and tantalum nitride 失效
公开(公告)号：US06638326B2
公开(公告)日：2003-10-28
申请号：US09965233
申请日：2001-09-25
申请人： Robert J. Small , Maria Peterson , Tuan Truong , Melvin Keith Carter , Lily Yao
发明人： Robert J. Small , Maria Peterson , Tuan Truong , Melvin Keith Carter , Lily Yao
IPC分类号： C09G102
CPC分类号： H01L21/3212 , C09G1/02
摘要： The present invention relates to compositions for the chemical mechanical planarization (“CMP”) of barrier/adhesion layers, particularly Ta/TaN barrier/adhesion layers as occur in the manufacture of integrated circuits. CMP compositions comprise an aqueous solution of oxidizer and colloidal silica abrasive. Oxidizers include hydroxylamine nitrate, nitric acid, benzotriazole, ammonium nitrate, aluminum nitrate, hydrazine and mixtures thereof in aqueous solution.

3. 发明授权

US07033409B2 Compositions for chemical mechanical planarization of tantalum and tantalum nitride 失效
公开(公告)号：US07033409B2
公开(公告)日：2006-04-25
申请号：US10665417
申请日：2003-09-22
申请人： Robert J. Small , Maria Peterson , Tuan Truong , Melvin Keith Carter , Lily Yao
发明人： Robert J. Small , Maria Peterson , Tuan Truong , Melvin Keith Carter , Lily Yao
IPC分类号： B24B1/00
CPC分类号： H01L21/3212 , C09G1/02
摘要： The present invention relates to compositions for the chemical mechanical planarization (“CMP”) of barrier/adhesion layers, particularly Ta/TaN barrier/adhesion layers as occur in the manufacture of integrated circuits. CMP compositions comprise an aqueous solution of oxidizer and colloidal silica abrasive. Oxidizers include hydroxylamine nitrate, nitric acid, benzotriazole, ammonium nitrate, aluminum nitrate, hydrazine and mixtures thereof in aqueous solution.

4. 发明申请

US20050250329A1 Compositions for chemical mechanical planarization of tantalum and tantalum nitride 失效
标题翻译：钽和氮化钽化学机械平面化的组成
公开(公告)号：US20050250329A1
公开(公告)日：2005-11-10
申请号：US10665417
申请日：2003-09-22
申请人： Robert Small , Maria Peterson , Tuan Truong , Melvin Carter , Lily Yao
发明人： Robert Small , Maria Peterson , Tuan Truong , Melvin Carter , Lily Yao
IPC分类号： C09G1/02 , H01L21/321 , H01L21/302 , H01L21/461
CPC分类号： H01L21/3212 , C09G1/02
摘要： The present invention relates to compositions for the chemical mechanical planarization (“CMP”) of barrier/adhesion layers, particularly Ta/TaN barrier/adhesion layers as occur in the manufacture of integrated circuits. CMP compositions comprise an aqueous solution of oxidizer and colloidal silica abrasive. Oxidizers include hydroxylamine nitrate, nitric acid, benzotriazole, ammonium nitrate, aluminum nitrate, hydrazine and mixtures thereof in aqueous solution.
摘要翻译：本发明涉及用于集成电路制造中出现的阻挡/粘附层，特别是Ta / TaN阻挡层/粘合层的化学机械平坦化（“CMP”）的组合物。 CMP组合物包含氧化剂和胶体二氧化硅磨料的水溶液。氧化剂包括硝酸羟胺，硝酸，苯并三唑，硝酸铵，硝酸铝，肼及其在水溶液中的混合物。

5. 发明申请

US20050266689A1 Chemical mechanical polishing composition and process 有权
标题翻译：化学机械抛光组合物和工艺
公开(公告)号：US20050266689A1
公开(公告)日：2005-12-01
申请号：US11194467
申请日：2005-08-02
申请人： Robert Small , Laurence McGhee , David Maloney , Maria Peterson
发明人： Robert Small , Laurence McGhee , David Maloney , Maria Peterson
IPC分类号： C09G1/02 , C09K13/00 , C09K13/06 , C23F1/00 , C23F3/00 , H01L21/02 , H01L21/302 , H01L21/304 , H01L21/306 , H01L21/311 , H01L21/321 , H01L21/461 , H01L21/4763 , H01L21/8238
CPC分类号： C09G1/02 , C09K13/00 , C09K13/06 , C23F3/00 , H01L21/02074 , H01L21/3212 , Y10S438/959
摘要： A composition for chemical mechanical polishing includes a slurry. A sufficient amount of a selectively oxidizing and reducing compound is provided in the composition to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adjusts the pH of the composition to provide a pH that makes the selectively oxidizing and reducing compound provide the differential removal of the metal and the dielectric material. A composition for chemical mechanical polishing is improved by including an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material. A selectively oxidizing and reducing compound is applied to produce a differential removal of the metal and the dielectric material. The pH of the slurry and the selectively oxidizing and reducing compound is adjusted to provide the differential removal of the metal and the dielectric material. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material, and an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid.
摘要翻译：用于化学机械抛光的组合物包括浆料。在组合物中提供足够量的选择性氧化和还原化合物以产生金属和介电材料的差别去除。 pH调节化合物调节组合物的pH以提供使得选择性氧化和还原化合物提供金属和介电材料的差异去除的pH。用于化学机械抛光的组合物通过包括有效量的羟胺化合物，过硫酸铵，作为过氧化氢的间接来源的化合物，过乙酸或高碘酸的化学机械抛光来改善。用于化学机械抛光的方法包括将浆料施加到金属和介电材料表面以产生金属和电介质材料的机械去除。施加选择性氧化还原化合物以产生金属和电介质材料的微分去除。调节浆料和选择性氧化和还原化合物的pH以提供金属和电介质材料的差别去除。一种用于化学机械抛光的方法包括将浆料施加到金属和介电材料表面以产生金属和介电材料的机械去除，以及用于化学机械抛光羟胺化合物，过硫酸铵，化合物为过氧化氢的间接来源，过乙酸或高碘酸。

6. 发明申请

US20150203657A1 NON-PHTHALIC PLASTICISER 审中-公开
标题翻译：非水性塑料制品
公开(公告)号：US20150203657A1
公开(公告)日：2015-07-23
申请号：US13818036
申请日：2011-07-26
申请人： Karin Ohgren Gredegard , Anders Magnuesson , Hakan Bjornberg , Niklas Persson , Maria Peterson , Kent Sorensen
发明人： Karin Ohgren Gredegard , Anders Magnuesson , Hakan Bjornberg , Niklas Persson , Maria Peterson , Kent Sorensen
IPC分类号： C08K5/103 , C08K5/11 , C07C69/34 , C08K5/1535
摘要： The present invention refers to a plasticiser, said plasticiser being an ester formed by reaction of a pentaerythritol and a monocarboxylic acid, having 4-5 carbon atoms. In a further aspect the present invention refers to the use of said plasticiser in blends and in a PVC resin. The plasticiser of the present invention is a non-phthalic plasticiser that has proven to have shorter fusion time and higher plasticising efficiency compared to commercial non-phthalic PVC plasticisers.
摘要翻译：本发明涉及一种增塑剂，所述增塑剂是通过具有4-5个碳原子的季戊四醇和一元羧酸的反应形成的酯。在另一方面，本发明涉及所述增塑剂在共混物和PVC树脂中的用途。本发明的增塑剂是一种非邻苯二甲酸增塑剂，其与商业非邻苯二甲酸PVC增塑剂相比具有较短的聚合时间和较高的增塑效果。

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