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    • 6. 发明授权
    • Compositions for chemical mechanical planarization of copper
    • 铜化学机械平面化的组成
    • US06866792B2
    • 2005-03-15
    • US10017934
    • 2001-12-12
    • Robert J. SmallMaria PetersonTuan TruongMelvin Keith CarterLily Yao
    • Robert J. SmallMaria PetersonTuan TruongMelvin Keith CarterLily Yao
    • C09G1/02C09K3/14C09K13/00C09K13/06
    • C09K3/1463C09G1/02
    • The present invention relates chemical mechanical planarization (“CMP”) of copper surfaces and describes copper CMP slurries including an oxidizer, one or more hydroxylamine compounds and at least one abrasive. The hydroxylamine compositions can include hydroxylamine nitrate, hydroxylamine, hydroxylamine sulfate, hydroxyl ammonium salts and mixtures thereof. The oxidizers may further include citric acid as a complexing agent for copper. Sulfuric acid and/or nitric acid provide means for modifying the pH of the oxidizer so that the hydroxylamine chemistries are acidic. Some embodiments include corrosion inhibitors such as benzotriazole, 2,4-pentadione dioxime and/or 1,6-dioxaspiro[4,4] nonane 2,7-dione. Some embodiments also include a free radical inhibitor, advantageously hydrazine. Colloidal silica and milled alumina are used as typical abrasive components.
    • 本发明涉及铜表面的化学机械平面化(“CMP”),并且描述了包括氧化剂,一种或多种羟胺化合物和至少一种研磨剂的铜CMP浆料。 羟胺组合物可以包括硝酸羟胺,羟胺,硫酸羟胺,羟基铵盐及其混合物。 氧化剂还可以包括柠檬酸作为铜的络合剂。 硫酸和/或硝酸提供了改变氧化剂的pH使得羟胺化学性质为酸性的方法。 一些实施方案包括腐蚀抑制剂,例如苯并三唑,2,4-戊二酮二肟和/或1,6-二氧杂螺[4,4]壬烷2,7-二酮。 一些实施方案还包括自由基抑制剂,有利的是肼。 胶体二氧化硅和碾磨的氧化铝用作典型的磨料组分。