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    • 3. 发明授权
    • Systems and methods for regulating semiconductor devices
    • 用于调节半导体器件的系统和方法
    • US09048831B2
    • 2015-06-02
    • US13549371
    • 2012-07-13
    • Robert Gregory WagonerTodd David GreenleafAlan Carroll Lovell
    • Robert Gregory WagonerTodd David GreenleafAlan Carroll Lovell
    • H03K17/60H03K17/16H03K17/14
    • H03K17/168H03K17/14H03K17/166
    • A system for regulating semiconductor devices may include a current regulator configured to regulate one or more currents provided to an insulated gate bipolar transistor (IGBT). The current regulator may regulate the currents by generating a current profile based at least in part on a collector voltage value associated with the IGBT, a rate of collector voltage change value associated with the IGBT, or any combination thereof. The current profile may include one or more current values to be provided to a gate of the IGBT such that the current values are configured to limit the rate of collector voltage change to a first value. The current regulator may then send the one or more current values to a current source configured to supply the gate of the IGBT with one or more currents that correspond to the one or more current values.
    • 用于调节半导体器件的系统可以包括被配置为调节提供给绝缘栅双极晶体管(IGBT)的一个或多个电流的电流调节器。 电流调节器可以至少部分地基于与IGBT相关联的集电极电压值,与IGBT相关联的集电极电压变化值的速率或其任何组合来产生电流分布来调节电流。 电流分布可以包括要提供给IGBT的栅极的一个或多个电流值,使得电流值被配置为将集电极电压变化的速率限制为第一值。 电流调节器然后可以将一个或多个电流值发送到被配置为向IGBT的栅极提供与一个或多个电流值对应的一个或多个电流的电流源。