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1. 发明授权

US5240166A Device for thermally enhanced ultrasonic bonding with localized heat pulses 失效
标题翻译：用于通过局部加热脉冲进行热增强超声波接合的装置
公开(公告)号：US5240166A
公开(公告)日：1993-08-31
申请号：US884497
申请日：1992-05-15
申请人： Robert E. Fontana, Jr. , Linda H. Lane , Celia E. Yeack-Scranton
发明人： Robert E. Fontana, Jr. , Linda H. Lane , Celia E. Yeack-Scranton
IPC分类号： H01L21/607 , B23K20/10 , H01L21/60
CPC分类号： H01L24/78 , B23K20/10 , H01L2224/4847 , H01L2224/78252 , H01L2224/78302 , H01L2224/85205 , H01L2924/00014 , H01L2924/01006 , H01L2924/01015 , H01L2924/01024 , H01L2924/01033 , H01L2924/01073 , H01L2924/01079 , H01L2924/12042 , H01L2924/14 , H01L2924/19043
摘要： A single point bonding tool for use in ultrasonically bonding a fine or ultrafine wire to another electrical conductor, has a thin film resistor integrally formed thereon. The thin film resistor is integrally formed on the bonding tip by standard photolithographic techniques applied to the bonding tool. The tool combines ultrasonic energy and thermal energy provided by the resistor to provide required bonding energy that may be localized both in space and in time. The result offers optimized energy transfer to the selected workpieces and minimizes risk of damage to adjacent, heat sensitive devices.
摘要翻译：用于将精细或超细线超声波接合到另一导电体上的单点焊接工具，其上形成有一体的薄膜电阻器。薄膜电阻器通过应用于接合工具的标准光刻技术一体形成在接合端上。该工具结合了超声能量和由电阻器提供的热能，以提供可能在空间和时间上被定位的所需的结合能。结果提供优化的能量传递到所选择的工件，并最大限度地减少相邻的热敏设备的损坏风险。

2. 发明授权

US5454158A Method of making integral transducer-suspension assemblies for longitudinal recording 失效
标题翻译：制造用于纵向记录的整体式传感器 - 悬挂组件的方法
公开(公告)号：US5454158A
公开(公告)日：1995-10-03
申请号：US270104
申请日：1994-07-01
申请人： Robert E. Fontana, Jr. , David A. Thompson , Mason L. Williams, III , Celia E. Yeack-Scranton
发明人： Robert E. Fontana, Jr. , David A. Thompson , Mason L. Williams, III , Celia E. Yeack-Scranton
IPC分类号： G11B5/31 , G11B5/48 , G11B5/60
CPC分类号： G11B5/6005 , G11B5/3103 , G11B5/3106 , G11B5/3133 , G11B5/3163 , G11B5/484 , Y10T29/49032 , Y10T29/49041 , Y10T29/49044
摘要： An integral combination magnetic transducer and suspension assembly suitable for use in both contact recording and in winchester-type applications is described. A generally rectangular elongate flat suspension member includes a ring-type inductive read/write transducer formed integrally with the suspension member and is embedded in one end of the suspension member. The ring-type inductive transducer is suitable for horizontal recording applications. The transducer magnetic poletips and magnetic gap are formed and positioned such that the poletips and gap are essentially co-planar with the air bearing surface of a slider-shaped protrusion extending from the lower surface of the end of the suspension member adjacent a moving media during operation. The air bearing surface presented to the disk has most of its area covered with a wear layer to minimize wear of the slider surface and poletips.
摘要翻译：描述适用于接触记录和温彻斯特型应用的整体组合磁传感器和悬架组件。大致矩形的细长扁平悬挂构件包括与悬挂构件一体形成并嵌入在悬架构件的一端中的环型感应读/写换能器。环型感应传感器适用于水平记录应用。传感器磁性弹片和磁隙被形成和定位成使得弹片和间隙基本上与从邻近移动介质的悬挂构件的端部的下表面延伸的滑块形突起的空气支承表面共同平齐操作。提供给盘的空气轴承表面的大部分区域覆盖有耐磨层，以最小化滑块表面和弹片的磨损。

3. 发明授权

US09064628B2 Inductor with stacked conductors 有权
标题翻译：具有堆叠导体的电感器
公开(公告)号：US09064628B2
公开(公告)日：2015-06-23
申请号：US13477978
申请日：2012-05-22
申请人： Robert E. Fontana, Jr. , Philipp Herget , Eugene J. O'Sullivan , Lubomyr T. Romankiw , Naigang Wang , Bucknell C. Webb
发明人： Robert E. Fontana, Jr. , Philipp Herget , Eugene J. O'Sullivan , Lubomyr T. Romankiw , Naigang Wang , Bucknell C. Webb
IPC分类号： H01F5/00 , H01F27/28 , H01F17/00 , H01L49/02
CPC分类号： H01F27/2804 , H01F5/00 , H01F17/0013 , H01F2017/0066 , H01F2017/0086 , H01F2027/2809 , H01L28/10
摘要： A thin film coupled inductor, a thin film spiral inductor, and a system that includes an electronic device and a power supply or power converter incorporating one or more such inductors. A thin film coupled inductor includes a wafer substrate; a bottom yoke comprising a magnetic material above the wafer substrate; a first insulating layer above the bottom yoke; a first conductor above the bottom yoke and separated therefrom by the first insulating layer; a second insulating layer above the first conductor; a second conductor above the second insulating layer; a third insulating layer above the second conductor; and a non-planar top yoke above the third insulating layer, the top yoke comprising a magnetic material.
摘要翻译：薄膜耦合电感器，薄膜螺旋电感器以及包括电子器件和并入一个或多个此类电感器的电源或功率转换器的系统。薄膜耦合电感器包括晶片衬底; 底部轭，其包括晶片衬底上方的磁性材料; 在底部轭上方的第一绝缘层; 第一导体，位于底部磁轭之上并由第一绝缘层分离; 在所述第一导体上方的第二绝缘层; 在第二绝缘层上方的第二导体; 在第二导体上方的第三绝缘层; 以及在第三绝缘层上方的非平面顶部磁轭，顶部磁轭包括磁性材料。

4. 发明授权

US08634168B2 Magnetoresistive sensor having a structure for activating and deactivating electrostatic discharge prevention circuitry 有权
标题翻译：具有用于激活和去激活静电放电防止电路的结构的磁阻传感器
公开(公告)号：US08634168B2
公开(公告)日：2014-01-21
申请号：US13433192
申请日：2012-03-28
申请人： Thomas Robert Albrecht , Robert E. Fontana, Jr. , Bruce Alvin Gurney , Timothy Clark Reiley , Xiao Z. Wu
发明人： Thomas Robert Albrecht , Robert E. Fontana, Jr. , Bruce Alvin Gurney , Timothy Clark Reiley , Xiao Z. Wu
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/40
摘要： A structure for preventing Electrostatic Discharge (ESD) damage to a magnetoresistive sensor during manufacture. The structure includes a switching element that can be switched off during testing of the sensor and then switched back on to provide ESD shunting to the sensor. The switch can be a thermally activated mechanical relay built onto the slider. The switch could also be a programmable resistor that includes a solid electrolyte sandwiched between first and second electrodes. One of the electrodes functions as an anode. When voltage is applied in a first direction an ion bridge forms across through the electrolyte across electrodes making the resistor conductive. When a voltage is applied in a second direction, the ion bridge recedes and the programmable resistor becomes essentially non-conductive.
摘要翻译：用于在制造期间防止静电放电（ESD）损坏磁阻传感器的结构。该结构包括开关元件，该开关元件可以在测试传感器期间关闭，然后重新接通以向传感器提供ESD分流。开关可以是内置在滑块上的热激活机械继电器。开关也可以是可编程电阻器，其包括夹在第一和第二电极之间的固体电解质。电极之一用作阳极。当沿第一方向施加电压时，离子桥跨越电解质跨过电极跨过电极，使电阻器导电。当沿第二个方向施加电压时，离子桥退出，可编程电阻基本上不导电。

5. 发明授权

US08059373B2 EMR sensor and transistor formed on the same substrate 有权
标题翻译： EMR传感器和晶体管形成在同一基板上
公开(公告)号：US08059373B2
公开(公告)日：2011-11-15
申请号：US11549879
申请日：2006-10-16
申请人： Liesl Folks , Robert E. Fontana, Jr. , Bruce A. Gurney , Klaas B. Klaassen , Stefan Maat
发明人： Liesl Folks , Robert E. Fontana, Jr. , Bruce A. Gurney , Klaas B. Klaassen , Stefan Maat
IPC分类号： G11B5/33
CPC分类号： G11B5/3993
摘要： Magnetic sensing chips and methods of fabricating the magnetic sensing chips are disclosed. A magnetic sensing chip as described herein includes an EMR sensor formed on a substrate from multiple semiconductor layers. One or more of the semiconductor layers form a quantum well comprising a two-dimensional electron gas (2DEG) or hole gas (2DHG). The magnetic sensing chip also includes one or more transistors formed on the substrate from the multiple semiconductor layers. The transistor(s) likewise include a quantum well comprising a 2DEG or 2DHG. The EMR sensor and the transistor(s) are connected by one or more connections so that the transistor(s) amplifies data signals from the EMR sensor.
摘要翻译：公开了磁感测芯片和制造磁感测芯片的方法。如本文所述的磁传感芯片包括形成在来自多个半导体层的衬底上的EMR传感器。一个或多个半导体层形成包含二维电子气（2DEG）或空穴气体（2DHG）的量子阱。磁感测芯片还包括从多个半导体层形成在衬底上的一个或多个晶体管。晶体管同样包括包含2DEG或2DHG的量子阱。 EMR传感器和晶体管通过一个或多个连接连接，使得晶体管放大来自EMR传感器的数据信号。

6. 发明授权

US08045299B2 Method and apparatus for oxidizing conductive redeposition in TMR sensors 有权
标题翻译：在TMR传感器中氧化导电再沉积的方法和装置
公开(公告)号：US08045299B2
公开(公告)日：2011-10-25
申请号：US11558532
申请日：2006-11-10
申请人： Robert E. Fontana, Jr. , Howard G. Zolla
发明人： Robert E. Fontana, Jr. , Howard G. Zolla
IPC分类号： G11B5/39
CPC分类号： H01F10/3254 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/012 , G11B5/3133 , G11B5/3163 , G11B5/3903 , G11B5/3906 , G11B5/3909 , G11B5/3967 , G11B5/40 , G11B2005/3996 , H01F41/308 , H01L43/12
摘要： A method and apparatus for oxidizing conductive redeposition in TMR sensors is disclosed. A TMR stack having a first electrode that includes at least a pinned layer and an antiferromagnetic (AFM) layer, a second electrode that includes a free layer and a tunnel barrier is formed. The TMR barrier layer is etched. Redeposition material is oxidized and the barrier is healed using an oxidizing agent selected from the group consisting of ozone and water vapor.
摘要翻译：公开了用于氧化TMR传感器中的导电再沉积的方法和装置。一种具有至少包括被钉扎层和反铁磁性（AFM）层的第一电极的TMR堆叠，形成包括自由层和隧道势垒的第二电极。蚀刻TMR阻挡层。再沉积材料被氧化，并且使用选自臭氧和水蒸气的氧化剂使屏障愈合。

7. 发明授权

US07839607B2 Method to reduce corner shunting during fabrication of CPP read heads 有权
标题翻译：在CPP读取头制造过程中减少拐角分流的方法
公开(公告)号：US07839607B2
公开(公告)日：2010-11-23
申请号：US11890868
申请日：2007-08-07
申请人： Robert E. Fontana, Jr. , Ying Hong , Wipul Pemsiri Jayasekara , Howard Gordon Zolla
发明人： Robert E. Fontana, Jr. , Ying Hong , Wipul Pemsiri Jayasekara , Howard Gordon Zolla
IPC分类号： G11B5/127
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/3163 , G11B5/3932 , G11B2005/3996 , Y10T428/1171
摘要： A method is presented for fabricating a CPP read head having a CPP read head sensor and a hard bias layer which includes forming a strip of sensor material in a sensor material region, and depositing strips of fast-milling dielectric material in first and second fast-milling dielectric material regions adjacent to the sensor material region. A protective layer and a layer of masking material are deposited on the strip of sensor material and the strips of fast-milling dielectric material to provide masked areas and exposed areas. A shaping source, such as an ion milling source, is provided which shapes the exposed areas. Hard bias material is then deposited on the regions of sensor material and fast-milling dielectric material to form caps on each of these regions. The caps of hard bias material and the masking material are then removed from each of these regions.
摘要翻译：提出了一种用于制造具有CPP读取头传感器和硬偏置层的CPP读取头的方法，该CPP读取头包括在传感器材料区域中形成传感器材料条，以及将快速研磨电介质材料的条带放置在第一和第二快速接头中，研磨与传感器材料区域相邻的介电材料区域。保护层和掩蔽材料层沉积在传感器材料条和快速研磨电介质材料条上，以提供掩蔽区域和暴露区域。提供成形源，例如离子铣削源，其形成暴露的区域。然后将硬偏置材料沉积在传感器材料和快速研磨电介质材料的区域上，以在这些区域中的每一个上形成盖。然后从这些区域中的每一个去除硬偏置材料的盖子和掩模材料。

8. 发明授权

US07615771B2 Memory array having memory cells formed from metallic material 有权
标题翻译：具有由金属材料形成的存储单元的存储器阵列
公开(公告)号：US07615771B2
公开(公告)日：2009-11-10
申请号：US11380498
申请日：2006-04-27
申请人： Robert E. Fontana, Jr. , Eric E. Fullerton , Stefan Maat , Jan-Ulrich Thiele
发明人： Robert E. Fontana, Jr. , Eric E. Fullerton , Stefan Maat , Jan-Ulrich Thiele
IPC分类号： H01L27/20
CPC分类号： G11C11/16 , G11C11/1675
摘要： Solid-state memories are disclosed that are comprised of cross-point memory arrays. The cross-point memory arrays include a first plurality of electrically conductive lines and a second plurality of electrically conductive lines that cross over the first plurality of electrically conductive lines. The memory arrays also include a plurality of memory cells located between the first and second conductive lines. The memory cells are formed from a metallic material, such as FeRh, having the characteristic of a first order phase transition due to a change in temperature. The first order phase transition causes a corresponding change in resistivity of the metallic material.
摘要翻译：公开了由交叉点存储器阵列组成的固态存储器。交叉点存储器阵列包括跨越第一多个导电线的第一多个导电线和第二多个导电线。存储器阵列还包括位于第一和第二导线之间的多个存储单元。存储单元由诸如FeRh的金属材料形成，具有由温度变化引起的一阶相变的特性。一阶相变导致金属材料的电阻率的相应变化。

9. 发明授权

US07253991B2 Planar perpendicular recording head 有权
标题翻译：平面垂直记录头
公开(公告)号：US07253991B2
公开(公告)日：2007-08-07
申请号：US10836918
申请日：2004-04-30
申请人： Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang
发明人： Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang
IPC分类号： G11B5/127 , G11B5/31
CPC分类号： G11B5/315 , G11B5/10 , G11B5/1278
摘要： A magnetic head (slider) for perpendicular recording which requires no lapping is described. The head is fabricated with an air bearing surface that is parallel to the wafer surface. The coil and pole pieces are formed from thin films disposed parallel to the air bearing surface. Standard lithographic techniques can be used to define the shapes, gaps and pole piece dimensions. Non-rectilinear shapes can be formed; for example, side shields that conform around the write pole piece region. The thickness of the main and return pole pieces are controlled by the deposition process rather than by lapping. The saw cuts used to separate the individual sliders from the rest of the wafer are perpendicular to the air-bearing surface and do not pass through any critical features.
摘要翻译：描述了不需要研磨的用于垂直记录的磁头（滑块）。该头部具有平行于晶片表面的空气轴承表面。线圈和极片由平行于空气轴承表面设置的薄膜形成。标准光刻技术可用于定义形状，间隙和极片尺寸。可以形成非直线形状; 例如，围绕写入极片区域的侧面屏蔽。主回极片和返回极片的厚度由沉积过程而不是研磨来控制。用于将各个滑块与其余的晶片分开的锯切板垂直于空气轴承表面，并且不通过任何关键特征。

10. 发明授权

US06847510B2 Magnetic tunnel junction device with bottom free layer and improved underlayer 有权
标题翻译：具有底部自由层和改进的底层的磁隧道连接装置
公开(公告)号：US06847510B2
公开(公告)日：2005-01-25
申请号：US10256722
申请日：2002-09-27
申请人： Jeffrey R. Childress , Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang
发明人： Jeffrey R. Childress , Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang
IPC分类号： G11B5/31 , G11B5/39 , H01L43/08 , G11C11/16
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/313 , G11B5/3903 , G11B5/3909 , H01L43/08
摘要： A magnetic tunnel junction (MTJ) device usable as a magnetic memory cell or magnetoresistive sensor, such as a MTJ read head for magnetic recording, has the free ferromagnetic layer located on the bottom of the device, the bottom free layer being formed on a special underlayer. The MTJ read head may be a flux-guided head that uses the free layer as a flux guide for directing magnetic flux from the magnetic media to the sensing region of the MTJ. The special underlayer for the growth of the free layer is an alloy comprising Mn, one of Pt, Ni, Ir and Os, and an additive X selected from Ta, Al, Ti, Cu, Cr and V. Without the additive, the underlayer alloy is antiferromagnetic. The additive is present in an amount sufficient to render the alloy to have no magnetic ordering, i.e., it is neither antiferromagnetic nor ferromagnetic, but without substantially affecting the preferred crystalline texture and unit cell size so that the underlayer is well-suited as a growth-enhancing underlayer for the free layer.
摘要翻译：可用作磁存储单元或磁阻传感器（例如用于磁记录的MTJ读头）的磁隧道结（MTJ）器件具有位于器件底部的自由铁磁层，底部自由层形成于特殊的底层 MTJ读头可以是磁通引导头，其使用自由层作为磁通引导件，用于将磁通量从磁介质引导到MTJ的感测区域。用于生长自由层的特殊底层是包含Mn，Pt，Ni，Ir和Os之一的合金，以及选自Ta，Al，Ti，Cu，Cr和V的添加剂X.没有添加剂，底层合金是反铁磁的。添加剂的存在量足以使合金不具有磁性排列，即它既不是反铁磁性的也不是铁磁性的，但是基本上不影响优选的晶体结构和晶胞尺寸，使得底层非常适合作为生长 - 增强自由层的底层。

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