专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20080151596A1 THREE-DIMENSIONAL MAGNETIC MEMORY 有权
公开(公告)号：US20080151596A1
公开(公告)日：2008-06-26
申请号：US11615618
申请日：2006-12-22
申请人： Robert E. Fontana, Jr. , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
发明人： Robert E. Fontana, Jr. , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
IPC分类号： G11C11/063 , H01L21/00
CPC分类号： G11C11/14 , G11C5/02 , G11C19/0808
摘要： Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. Bits may be written to a data storage layer in the form of magnetic domains. The bits can then be transferred between the stacked data storage layers by heating a neighboring data storage layer, which allows the magnetic fields from the magnetic domains to imprint the magnetic domains in the neighboring data storage layer. By imprinting the magnetic domains into the neighboring data storage layer, the bits are copied from one data storage layer to another.

2. 发明授权

US07388776B1 Three-dimensional magnetic memory 有权
标题翻译：三维磁记忆体
公开(公告)号：US07388776B1
公开(公告)日：2008-06-17
申请号：US11615618
申请日：2006-12-22
申请人： Robert E. Fontana, Jr. , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
发明人： Robert E. Fontana, Jr. , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
IPC分类号： G11C11/15 , G11C11/14
CPC分类号： G11C11/14 , G11C5/02 , G11C19/0808
摘要： Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. Bits may be written to a data storage layer in the form of magnetic domains. The bits can then be transferred between the stacked data storage layers by heating a neighboring data storage layer, which allows the magnetic fields from the magnetic domains to imprint the magnetic domains in the neighboring data storage layer. By imprinting the magnetic domains into the neighboring data storage layer, the bits are copied from one data storage layer to another.
摘要翻译：公开了磁存储器和方法。如本文所述的磁存储器包括多个堆叠的数据存储层以形成三维磁存储器。位可以以磁畴的形式写入数据存储层。然后可以通过加热相邻数据存储层在堆叠的数据存储层之间传送这些位，这允许来自磁畴的磁场将磁畴压印在相邻的数据存储层中。通过将磁畴印刷到相邻数据存储层中，将这些位从一个数据存储层复制到另一个。

3. 发明授权

US08018765B2 Three-dimensional magnetic memory 有权
标题翻译：三维磁记忆体
公开(公告)号：US08018765B2
公开(公告)日：2011-09-13
申请号：US12553670
申请日：2009-09-03
申请人： Robert E. Fontana, Jr. , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
发明人： Robert E. Fontana, Jr. , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
IPC分类号： G11C11/15 , G11C11/14
CPC分类号： G11C11/14 , G11C5/02 , G11C19/0808
摘要： Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. Bits may be written to a data storage layer in the form of magnetic domains. The bits can then be transferred between the stacked data storage layers by heating a neighboring data storage layer, which allows the magnetic fields from the magnetic domains to imprint the magnetic domains in the neighboring data storage layer. By imprinting the magnetic domains into the neighboring data storage layer, the bits are copied from one data storage layer to another.
摘要翻译：公开了磁存储器和方法。如本文所述的磁存储器包括多个堆叠的数据存储层以形成三维磁存储器。位可以以磁畴的形式写入数据存储层。然后可以通过加热相邻数据存储层在堆叠的数据存储层之间传送这些位，这允许来自磁畴的磁场将磁畴压印在相邻的数据存储层中。通过将磁畴印刷到相邻数据存储层中，将这些位从一个数据存储层复制到另一个。

4. 发明授权

US07606065B2 Three-dimensional magnetic memory having bits transferrable between storage layers 有权
标题翻译：具有可在存储层之间传送的位的三维磁存储器
公开(公告)号：US07606065B2
公开(公告)日：2009-10-20
申请号：US12116111
申请日：2008-05-06
申请人： Robert E. Fontana, Jr. , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
发明人： Robert E. Fontana, Jr. , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
IPC分类号： G11C11/15 , G11C11/14
CPC分类号： G11C11/14 , G11C5/02 , G11C19/0808
摘要： Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. Bits may be written to a data storage layer in the form of magnetic domains. The bits can then be transferred between the stacked data storage layers by heating a neighboring data storage layer, which allows the magnetic fields from the magnetic domains to imprint the magnetic domains in the neighboring data storage layer. By imprinting the magnetic domains into the neighboring data storage layer, the bits are copied from one data storage layer to another.
摘要翻译：公开了磁存储器和方法。如本文所述的磁存储器包括多个堆叠的数据存储层以形成三维磁存储器。位可以以磁畴的形式写入数据存储层。然后可以通过加热相邻数据存储层在堆叠的数据存储层之间传送这些位，这允许来自磁畴的磁场将磁畴压印在相邻的数据存储层中。通过将磁畴印刷到相邻数据存储层中，将这些位从一个数据存储层复制到另一个。

5. 发明申请

US20100002487A1 THREE-DIMENSIONAL MAGNETIC MEMORY 有权
标题翻译：三维磁记忆
公开(公告)号：US20100002487A1
公开(公告)日：2010-01-07
申请号：US12553670
申请日：2009-09-03
申请人： Robert E. Fontana, JR. , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
发明人： Robert E. Fontana, JR. , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
IPC分类号： G11C11/00 , G11C11/15 , G11C11/416
CPC分类号： G11C11/14 , G11C5/02 , G11C19/0808
摘要： Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. Bits may be written to a data storage layer in the form of magnetic domains. The bits can then be transferred between the stacked data storage layers by heating a neighboring data storage layer, which allows the magnetic fields from the magnetic domains to imprint the magnetic domains in the neighboring data storage layer. By imprinting the magnetic domains into the neighboring data storage layer, the bits are copied from one data storage layer to another.
摘要翻译：公开了磁存储器和方法。如本文所述的磁存储器包括多个堆叠的数据存储层以形成三维磁存储器。位可以以磁畴的形式写入数据存储层。然后可以通过加热相邻数据存储层在堆叠的数据存储层之间传送这些位，这允许来自磁畴的磁场将磁畴压印在相邻的数据存储层中。通过将磁畴印刷到相邻数据存储层中，将这些位从一个数据存储层复制到另一个。

6. 发明申请

US20080205116A1 THREE-DIMENSIONAL MAGNETIC MEMORY 有权
标题翻译：三维磁记忆
公开(公告)号：US20080205116A1
公开(公告)日：2008-08-28
申请号：US12116111
申请日：2008-05-06
申请人： Robert E. Fontana , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
发明人： Robert E. Fontana , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
IPC分类号： G11C11/15 , H01L21/00
CPC分类号： G11C11/14 , G11C5/02 , G11C19/0808
摘要： Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. Bits may be written to a data storage layer in the form of magnetic domains. The bits can then be transferred between the stacked data storage layers by heating a neighboring data storage layer, which allows the magnetic fields from the magnetic domains to imprint the magnetic domains in the neighboring data storage layer. By imprinting the magnetic domains into the neighboring data storage layer, the bits are copied from one data storage layer to another.
摘要翻译：公开了磁存储器和方法。如本文所述的磁存储器包括多个堆叠的数据存储层以形成三维磁存储器。位可以以磁畴的形式写入数据存储层。然后可以通过加热相邻数据存储层在堆叠的数据存储层之间传送这些位，这允许来自磁畴的磁场将磁畴压印在相邻的数据存储层中。通过将磁畴印刷到相邻数据存储层中，将这些位从一个数据存储层复制到另一个。

7. 发明申请

US20100039849A1 READ/WRITE ELEMENTS FOR A THREE-DIMENSIONAL MAGNETIC MEMORY 有权
标题翻译：三维磁记忆读/写元件
公开(公告)号：US20100039849A1
公开(公告)日：2010-02-18
申请号：US12191956
申请日：2008-08-14
申请人： Robert E. Fontana, JR. , Jordan A. Katine , Ching Hwa Tsang , Barry Stipe , Bruce D. Terris
发明人： Robert E. Fontana, JR. , Jordan A. Katine , Ching Hwa Tsang , Barry Stipe , Bruce D. Terris
IPC分类号： G11C11/15 , G11C11/14 , G11C11/00 , H01L21/00
CPC分类号： G11C11/15 , G11C5/02 , G11C11/1675 , H01L27/228
摘要： Read/write elements for three-dimensional magnetic memories are disclosed. One embodiment describes an array of integrated read/write elements. The array includes read conductors formed proximate to one of the layers (i.e., storage stacks) of the three-dimensional magnetic memory. The array also includes flux caps formed proximate to the read conductors, and read sensors formed proximate to the flux caps. The array also includes a magnetic pole having a first end contacting the read sensor and a second end opposite the first end. First write conductors are fabricated between the magnetic poles, and second write conductors are also fabricated between the magnetic poles orthogonal to the first write conductors. The first write conductors and the second write conductors form current loops around the magnetic poles.
摘要翻译：公开了用于三维磁存储器的读/写元件。一个实施例描述了集成读/写元件的阵列。阵列包括靠近三维磁性存储器的一个层（即，存储堆叠）形成的读取导体。阵列还包括靠近读取导体形成的焊剂帽，以及靠近焊剂帽形成的读取传感器。阵列还包括具有接触读取传感器的第一端和与第一端相对的第二端的磁极。在磁极之间制造第一写入导体，并且在与第一写入导体正交的磁极之间也制造第二写入导体。第一写入导体和第二写入导体在磁极周围形成电流环。

8. 发明授权

US07821822B2 Read/write elements for a three-dimensional magnetic memory 有权
标题翻译：用于三维磁记忆体的读/写元件
公开(公告)号：US07821822B2
公开(公告)日：2010-10-26
申请号：US12191956
申请日：2008-08-14
申请人： Robert E. Fontana, Jr. , Jordan A. Katine , Ching Hwa Tsang , Barry Stipe , Bruce D. Terris
发明人： Robert E. Fontana, Jr. , Jordan A. Katine , Ching Hwa Tsang , Barry Stipe , Bruce D. Terris
IPC分类号： G11C11/15
CPC分类号： G11C11/15 , G11C5/02 , G11C11/1675 , H01L27/228
摘要： Read/write elements for three-dimensional magnetic memories are disclosed. One embodiment describes an array of integrated read/write elements. The array includes read conductors formed proximate to one of the layers (i.e., storage stacks) of the three-dimensional magnetic memory. The array also includes flux caps formed proximate to the read conductors, and read sensors formed proximate to the flux caps. The array also includes a magnetic pole having a first end contacting the read sensor and a second end opposite the first end. First write conductors are fabricated between the magnetic poles, and second write conductors are also fabricated between the magnetic poles orthogonal to the first write conductors. The first write conductors and the second write conductors form current loops around the magnetic poles.
摘要翻译：公开了用于三维磁存储器的读/写元件。一个实施例描述了集成读/写元件的阵列。阵列包括靠近三维磁性存储器的一个层（即，存储堆叠）形成的读取导体。阵列还包括靠近读取导体形成的焊剂帽，以及靠近焊剂帽形成的读取传感器。阵列还包括具有接触读取传感器的第一端和与第一端相对的第二端的磁极。在磁极之间制造第一写入导体，并且在与第一写入导体正交的磁极之间也制造第二写入导体。第一写入导体和第二写入导体在磁极周围形成电流环。

9. 发明授权

US07043823B2 Method of manufacturing a current-perpendicular-to-plane magnetoresistive device with oxidized free layer side regions 有权
标题翻译：制造具有氧化自由层侧面区域的电流 - 垂直于平面的磁阻器件的方法
公开(公告)号：US07043823B2
公开(公告)日：2006-05-16
申请号：US10869590
申请日：2004-06-15
申请人： Jeffrey R. Childress , Elizabeth A. Dobisz , Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang , Son Van Nguyen
发明人： Jeffrey R. Childress , Elizabeth A. Dobisz , Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang , Son Van Nguyen
IPC分类号： G11B5/127 , B44C1/22
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3116 , G11B5/313 , G11B5/3163 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , H01L43/08 , H01L43/12 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A current-perpendicular-to the-plane (CPP) magnetoresistive device, such as a magnetic tunnel junction (MTJ), is formed by patterning a capping layer (e.g., using resist) in the shape of a central region of an underlying free ferromagnetic layer that in turn resides over additional layers of the MTJ. Side regions of the capping layer are removed by ion milling or etching down into the free ferromagnetic layer. Unmasked side regions of the ferromagnetic layer are then oxidized to render them locally non-ferromagnetic and electrically insulating.
摘要翻译：电流垂直于平面（CPP）的磁阻器件，例如磁性隧道结（MTJ），是通过将覆盖层（例如，使用抗蚀剂）图案化成下层自由铁磁性的中心区域层又依赖于MTJ的附加层。通过离子铣削或蚀刻到自由铁磁层中去除覆盖层的侧面区域。然后将铁磁性层的未掩模的侧面区域氧化，使其局部非铁磁性并电绝缘。

10. 发明授权

US07253991B2 Planar perpendicular recording head 有权
标题翻译：平面垂直记录头
公开(公告)号：US07253991B2
公开(公告)日：2007-08-07
申请号：US10836918
申请日：2004-04-30
申请人： Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang
发明人： Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang
IPC分类号： G11B5/127 , G11B5/31
CPC分类号： G11B5/315 , G11B5/10 , G11B5/1278
摘要： A magnetic head (slider) for perpendicular recording which requires no lapping is described. The head is fabricated with an air bearing surface that is parallel to the wafer surface. The coil and pole pieces are formed from thin films disposed parallel to the air bearing surface. Standard lithographic techniques can be used to define the shapes, gaps and pole piece dimensions. Non-rectilinear shapes can be formed; for example, side shields that conform around the write pole piece region. The thickness of the main and return pole pieces are controlled by the deposition process rather than by lapping. The saw cuts used to separate the individual sliders from the rest of the wafer are perpendicular to the air-bearing surface and do not pass through any critical features.
摘要翻译：描述了不需要研磨的用于垂直记录的磁头（滑块）。该头部具有平行于晶片表面的空气轴承表面。线圈和极片由平行于空气轴承表面设置的薄膜形成。标准光刻技术可用于定义形状，间隙和极片尺寸。可以形成非直线形状; 例如，围绕写入极片区域的侧面屏蔽。主回极片和返回极片的厚度由沉积过程而不是研磨来控制。用于将各个滑块与其余的晶片分开的锯切板垂直于空气轴承表面，并且不通过任何关键特征。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式